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公开(公告)号：US20050072925A1
公开(公告)日：2005-04-07
申请号：US10960876
申请日：2004-10-06
CPC分类号： G01J5/34
摘要： A pyrometer cell comprises a first ferroelectric capacitor, a second ferroelectric capacitor, and a difference circuit for determining the difference between the polarization charge, voltage, or current between the first and second ferroelectric capacitors. The cell is pulsed a plurality of times and an integrator circuit connected to the difference circuit provides an enhanced output signal representative of the integrated difference. An infrared imager is formed by an array of the pyrometer cells, with one ferroelectric capacitor in each cell exposed to an infrared source and the other ferroelectric capacitor not exposed to the infrared source.
摘要翻译： 高温计单元包括第一铁电电容器，第二铁电电容器和用于确定第一和第二铁电电容器之间的极化电荷，电压或电流之间的差的差分电路。 电池被脉冲多次，并且连接到差分电路的积分器电路提供表示积分差的增强的输出信号。 红外成像器由高温计单元的阵列形成，每个单元中的一个铁电电容器暴露于红外源，而另一个铁电电容器不暴露于红外源。
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公开(公告)号：US07564021B2
公开(公告)日：2009-07-21
申请号：US10546613
申请日：2004-02-20
申请人： Joseph V. Mantese , Norman W. Schubring , Adolph L. Micheli , Carlos Paz De Araujo , Larry McMillan , Jolanta Celinska
发明人： Joseph V. Mantese , Norman W. Schubring , Adolph L. Micheli , Carlos Paz De Araujo , Larry McMillan , Jolanta Celinska
CPC分类号： G01J5/34
摘要： A pyroelectric sensor for determines a charge output of a ferroelectric scene element of the sensor by measuring the hysteresis loop output of the scene element several times during a particular time frame for the same temperature. An external AC signal is applied to the ferroelectric scene element to cause the hysteresis loop output from the element to switch polarization. Charge integration circuitry is employed to measure the charge from the scene element. The ferroelectric of the scene element is made of strontium bismuth tantalate, or derivative thereof, disposed directly between top and bottom electrodes. The polarization of the reference element which is compared to and subtracted from the polarization of the scene element for each cycle. The polarization difference measured for each cycle over a set time period are summed by an integrating amplifier to produce a signal output voltage.
摘要翻译： 一种热电传感器，用于通过在相同温度的特定时间范围内多次测量场景元件的磁滞回线输出来确定传感器的铁电场景元件的电荷输出。 外部交流信号被施加到铁电场景元件以使得从元件输出的磁滞回线转换偏振。 采用电荷积分电路来测量场景元素的电荷。 场景元件的铁电体由直接设置在顶部和底部电极之间的钽酸铋钽或其衍生物制成。 参考元件的极化，与每个周期的场景元素的偏振相比较和减去。 在设定的时间周期内对每个周期测量的偏振差由积分放大器相加以产生信号输出电压。
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公开(公告)号：US20070108385A1
公开(公告)日：2007-05-17
申请号：US10546613
申请日：2004-02-20
申请人： Joseph Mantese , Norman Schubring , Adolph Micheli , Carlos De Araujo , Larry McMillan , Jolanta Celinska
发明人： Joseph Mantese , Norman Schubring , Adolph Micheli , Carlos De Araujo , Larry McMillan , Jolanta Celinska
IPC分类号： G01J5/00
CPC分类号： G01J5/34
摘要： A ferroelectric/pyroelectric sensor employs a technique for determining a charge output of a ferroelectric scene element of the sensor by measuring the hysteresis loop output of the scene element several times during a particular time frame for the same temperature. An external AC signal is applied to the ferroelectric scene element to cause the hysteresis loop output from the element to switch polarization. Charge integration circuitry, such as a combination output capacitor and operational amplifier, is employed to measure the charge from the scene element. Preferably, the ferroelectric of the scene element is made of an economical and responsive strontium bismuth tantalate, SBT, or derivative thereof, disposed directly between top and bottom electrodes. Because of the frequency characteristics of the sensor, created by the external AC signal, the element need not be thermally isolated from the silicon substrate by a traditional air bridge, which is difficult to manufacture, and instead is preferably thermally isolated by spin-on-glass, SOG. To prevent saturation of an output signal voltage of the sensor by excessive charge accumulation in an output capacitor, the sensor preferably has a reference element configured electrically in parallel with the scene element. When the voltage of the AC signal is negative the output capacitor is discharged by flowing current through the reference element thus interrogating the polarization of the reference element which is compared to and subtracted from the polarization of the scene element for each cycle. The polarization difference measured for each cycle over a set time period are summed by an integrating amplifier to produce a signal output voltage.
摘要翻译： 铁电/热电传感器采用用于通过在相同温度的特定时间段内多次测量场景元件的磁滞回线输出来确定传感器的铁电场景元件的电荷输出的技术。 外部交流信号被施加到铁电场景元件以使得从元件输出的磁滞回线转换偏振。 采用诸如组合输出电容器和运算放大器的电荷积分电路来测量场景元件中的电荷。 优选地，场景元件的铁电体由直接设置在顶部和底部电极之间的经济且响应的钽酸铋铋钡，或其衍生物制成。 由于由外部AC信号产生的传感器的频率特性，该元件不需要通过难以制造的传统空气桥与硅衬底热隔离，而是优选地通过旋转隔离热隔离， 玻璃，SOG。 为了通过输出电容器中的过度电荷积累来防止传感器的输出信号电压的饱和，传感器优选地具有与场景元件电并联配置的参考元件。 当AC信号的电压为负时，输出电容器通过流过参考元件的电流而被放电，从而询问参考元件的偏振，该参考元件的偏振与每个周期的场景元素的偏振相比较和减去。 在设定的时间周期内对每个周期测量的偏振差由积分放大器相加以产生信号输出电压。
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公开(公告)号：US07038206B2
公开(公告)日：2006-05-02
申请号：US10960876
申请日：2004-10-06
IPC分类号： G01J5/02
CPC分类号： G01J5/34
摘要： A pyrometer cell comprises a first ferroelectric capacitor, a second ferroelectric capacitor, and a difference circuit for determining the difference between the polarization charge, voltage, or current between the first and second ferroelectric capacitors. The cell is pulsed a plurality of times and an integrator circuit connected to the difference circuit provides an enhanced output signal representative of the integrated difference. An infrared imager is formed by an array of the pyrometer cells, with one ferroelectric capacitor in each cell exposed to an infrared source and the other ferroelectric capacitor not exposed to the infrared source.
摘要翻译： 高温计单元包括第一铁电电容器，第二铁电电容器和用于确定第一和第二铁电电容器之间的极化电荷，电压或电流之间的差的差分电路。 电池被脉冲多次，并且连接到差分电路的积分器电路提供表示积分差的增强的输出信号。 红外成像器由高温计单元的阵列形成，每个单元中的一个铁电电容器暴露于红外源，而另一个铁电电容器不暴露于红外源。
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公开(公告)号：US20080106925A1
公开(公告)日：2008-05-08
申请号：US11937461
申请日：2007-11-08
CPC分类号： H01L45/04 , H01L27/2409 , H01L27/2436 , H01L45/1233 , H01L45/146 , H01L45/1608 , H01L45/1616 , H01L45/1625 , H01L45/1641 , H01L45/1675
摘要： A non-volatile resistive switching memory that includes a homogeneous material which changes between the insulative and conductive states due to correlations between electrons, particularly via a Mott transition. The material is crystallized into the conductive state and does not require electroforming.
摘要翻译： 一种非易失性电阻式开关存储器，其包括由于电子之间的相关性而导致的绝缘和导电状态之间的均匀材料，特别是通过Mott跃迁。 该材料结晶成导电状态，不需要电铸。
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公开(公告)号：US06815223B2
公开(公告)日：2004-11-09
申请号：US10302441
申请日：2002-11-22
申请人： Jolanta Celinska , Vikram Joshi , Narayan Solayappan , Myoungho Lim , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Jolanta Celinska , Vikram Joshi , Narayan Solayappan , Myoungho Lim , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： H01G706
摘要： A precursor for forming a thin film of layered superlattice material is applied to an integrated circuit substrate. The precursor coating is heated using rapid thermal processing (RTP) with a ramping rate of 100° C./second at a hold temperature in a range of from 500° C. to 900° C. for a cumulative heating time not exceeding 30 minutes, and preferably less than 5 minutes. In fabricating a ferroelectric memory cell, the coating is heated in oxygen using RTP, then a top electrode layer is formed, and then the substrate including the coating is heated using RTP in oxygen or in nonreactive gas after forming the top electrode layer. The thin film of layered superlattice material preferably comprises strontium bismuth tantalate or strontium bismuth tantalum niobate, and preferably has a thickness in a range of from 25 nm to 120 nm. The process of fabricating a thin film of layered superlattice material typically has a thermal budget value not exceeding 960,000° C.-sec, preferably less than 50,000° C.-sec.
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公开(公告)号：US06495709B1
公开(公告)日：2002-12-17
申请号：US09526786
申请日：2000-03-16
IPC分类号： C07F506
CPC分类号： C23C30/00 , C03C17/25 , C03C2217/214 , C03C2218/113 , C07C51/412 , C07C53/128
摘要： A precursor for forming an aluminum oxide film comprises a liquid solution of an aluminum organic precursor compound in an organic solvent. In a second embodiment, the precursor comprises a suspension of aluminum oxide powder in a solution of an aluminum organic precursor compound. A precursor according to the invention is deposited on a substrate by dipping, rolling, spraying, misted deposition, spin on deposition, or chemical vapor deposition then heated to fabricate transparent aluminum oxide films. The electronic properties of the aluminum oxide films may be improved by depositing a plurality of layers of the precursor and annealing the precursor between layers.
摘要翻译： 用于形成氧化铝膜的前体包括铝有机前体化合物在有机溶剂中的液体溶液。 在第二个实施方案中，前体包含氧化铝粉末在铝有机前体化合物的溶液中的悬浮液。 根据本发明的前体通过浸渍，轧制，喷涂，雾化沉积，沉积或化学气相沉积沉积在基底上，然后加热以制造透明氧化铝膜。 可以通过沉积多层前体并在层间退火前体来改善氧化铝膜的电子性能。
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公开(公告)号：US20080107801A1
公开(公告)日：2008-05-08
申请号：US11937481
申请日：2007-11-08
IPC分类号： B05D5/12
CPC分类号： H01L45/04 , G11C13/0002 , G11C2213/79 , H01L27/2436 , H01L45/1233 , H01L45/146 , H01L45/1608 , H01L45/1616 , H01L45/1625 , H01L45/1641 , H01L45/1675
摘要： A method of making a variable resistance material (VRM), the method comprising providing a precursor comprising a metallorganic or organometallic solvent containing a metal moiety suitable for forming the VRM, depositing the precursor on a substrate to form a thin film of the precursor, and heating the thin film to form the VRM. The preferred solvent comprises octane.
摘要翻译： 一种制备可变电阻材料（VRM）的方法，所述方法包括提供包含含有适于形成VRM的金属部分的金属有机或有机金属溶剂的前体，将前体沉积在基底上以形成前体的薄膜，以及 加热薄膜以形成VRM。 优选的溶剂包括辛烷。
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公开(公告)号：US20080106926A1
公开(公告)日：2008-05-08
申请号：US11937479
申请日：2007-11-08
CPC分类号： G11C13/003 , B82Y10/00 , G11C11/24 , G11C13/0007 , G11C2213/32 , G11C2213/53 , G11C2213/72 , G11C2213/75 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L29/685 , H01L45/04 , H01L45/1226 , H01L45/1233 , H01L45/146
摘要： An integrated circuit memory cell including: a semiconductor having a first active area, a second active area, and a channel between the active areas; and a layer of a variable resistance material (VRM) directly above the channel. In one embodiment, there is a first conductive layer between the VRM and the channel and a second conductive layer directly above the VRM layer. The VRM preferably is a correlated electron material (CEM). The memory cell comprises a FET, such as a JFET or a MESFET. In another embodiment, there is a layer of an insulating material between the VRM and the channel. In this case, the memory cell may include a MOSFET structure.
摘要翻译： 一种集成电路存储单元，包括：具有第一有源区，第二有源区和在有源区之间的沟道的半导体; 以及在通道正上方的可变电阻材料层（VRM）。 在一个实施例中，在VRM和沟道之间存在第一导电层，以及VRM层正上方的第二导电层。 VRM优选为相关电子材料（CEM）。 存储单元包括FET，例如JFET或MESFET。 在另一个实施例中，在VRM和通道之间存在绝缘材料层。 在这种情况下，存储单元可以包括MOSFET结构。
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公开(公告)号：US06781184B2
公开(公告)日：2004-08-24
申请号：US09998469
申请日：2001-11-29
申请人： Narayan Solayappan , Jolanta Celinska , Vikram Joshi , Carlos A. Paz de Araujo , Larry D. McMillan
发明人： Narayan Solayappan , Jolanta Celinska , Vikram Joshi , Carlos A. Paz de Araujo , Larry D. McMillan
IPC分类号： H01L27108
CPC分类号： H01L28/57 , H01L23/642 , H01L2924/0002 , H01L2924/00
摘要： A hydrogen diffusion barrier in an integrated circuit is located to inhibit diffusion of hydrogen to a thin film of a metal oxide, such as a ferroelectric layered superlattice material, in an integrated circuit. The hydrogen diffusion barrier comprises at least one of the following chemical compounds: strontium tantalate, bismuth tantalate, tantalum oxide, titanium oxide, zirconium oxide and aluminum oxide. The hydrogen barrier layer is amorphous and is made by a MOCVD process at a temperature of 450° C. or less. A supplemental hydrogen barrier layer comprising a material selected from the group consisting of silicon nitride and a crystalline form of one of said hydrogen barrier layer materials is formed adjacent to said hydrogen diffusion barrier.
摘要翻译： 集成电路中的氢扩散阻挡层位于集成电路中以抑制氢扩散到诸如铁电层状超晶格材料的金属氧化物的薄膜。 氢扩散阻挡层包括以下化合物中的至少一种：钽酸锶，钽酸铋，氧化钽，氧化钛，氧化锆和氧化铝。 氢阻挡层是无定形的，并且在450℃或更低的温度下通过MOCVD工艺制成。 在与所述氢扩散阻挡层相邻的地方形成包括选自氮化硅和所述氢阻挡层材料之一的结晶形式的材料的补充氢阻挡层。
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