Structures with high number density of carbon nanotubes and 3-dimensional distribution
    1.
    发明授权
    Structures with high number density of carbon nanotubes and 3-dimensional distribution 有权
    具有高密度碳纳米管和三维分布的结构

    公开(公告)号:US06495258B1

    公开(公告)日:2002-12-17

    申请号:US09665751

    申请日:2000-09-20

    IPC分类号: B32B900

    摘要: A composite is described having a three dimensional distribution of carbon nanotubes. The critical aspect of such composites is a nonwoven network of randomly oriented fibers connected at their junctions to afford macropores in the spaces between the fibers. A variety of fibers may be employed, including metallic fibers, and especially nickel fibers. The composite has quite desirable properties for cold field electron emission applications, such as a relatively low turn-on electric field, high electric field enhancement factors, and high current densities. The composites of this invention also show favorable properties for other an electrode applications. Several methods, which also have general application in carbon nanotube production, of preparing these composites are described and employ a liquid feedstock of oxyhydrocarbons as carbon nanotube precursors.

    摘要翻译: 描述了具有碳纳米管的三维分布的复合材料。 这种复合材料的关键方面是随机取向的纤维的非织造网络,其在其连接处连接以在纤维之间的空间中提供大孔。 可以使用各种纤维,包括金属纤维,特别是镍纤维。 该复合材料对于冷场电子发射应用具有非常理想的性能,例如相对较低的导通电场,高电场增强因子和高电流密度。 本发明的复合材料还显示了其它电极应用的有利性质。 描述了几种在碳纳米管生产中一般应用于制备这些复合材料的方法,并采用了氧代烃作为碳纳米管前体的液体原料。

    Method of plasma enhanced chemical vapor deposition of diamond using methanol-based solutions
    2.
    发明授权
    Method of plasma enhanced chemical vapor deposition of diamond using methanol-based solutions 失效
    使用甲醇溶液的等离子体增强化学气相沉积方法

    公开(公告)号:US07622151B2

    公开(公告)日:2009-11-24

    申请号:US10772740

    申请日:2004-02-05

    申请人: Yonhua Tzeng

    发明人: Yonhua Tzeng

    IPC分类号: C23C16/00 C23C16/26

    摘要: Briefly described, methods of forming diamond are described. A representative method, among others, includes: providing a substrate in a reaction chamber in a non-magnetic-field microwave plasma system; introducing, in the absence of a gas stream, a liquid precursor substantially free of water and containing methanol and at least one carbon and oxygen containing compound having a carbon to oxygen ratio greater than one, into an inlet of the reaction chamber; vaporizing the liquid precursor; and subjecting the vaporized precursor, in the absence of a carrier gas and in the absence in a reactive gas, to a plasma under conditions effective to disassociate the vaporized precursor and promote diamond growth on the substrate in a pressure range from about 70 to 130 Torr.

    摘要翻译: 简要描述形成金刚石的方法。 代表性的方法包括:在非磁场微波等离子体系统中的反应室中提供衬底; 在没有气流的情况下,将基本上不含水并含有甲醇和至少一种碳/氧比大于1的碳和氧的化合物的液体前体引入反应室的入口; 蒸发液体前体; 在不存在载气的情况下,并且在不存在反应气体的情况下,使蒸发的前体在有效地使汽化的前体分离的条件下和在约70至130托的压力范围内促进基体上的金刚石生长的条件下进行等离子体 。

    Method of hot-filament chemical vapor deposition of diamond
    3.
    发明授权
    Method of hot-filament chemical vapor deposition of diamond 失效
    金刚石热丝化学气相沉积方法

    公开(公告)号:US06558742B1

    公开(公告)日:2003-05-06

    申请号:US09502065

    申请日:2000-02-10

    申请人: Yonhua Tzeng

    发明人: Yonhua Tzeng

    IPC分类号: C23C1626

    CPC分类号: C23C16/277 C23C16/271

    摘要: A method of forming diamond crystals and diamond films from a dissociated precursor solution of methanol and at least one carbon containing compound having a carbon to oxygen ration of greater than one is disclosed. The A hot filament is applied to dissociate the vaporized precursor of the premixed solution and generate oxidizing and etching radicals such as OH. O, H as well as carbon depositing radicals such as CH3. Graphitic and amorphous carbon deposition is suppressed or preferentially etched resulting in the net deposition of good quality diamond crystals and diamond films.

    摘要翻译: 公开了从解离的甲醇的前体溶液和至少一种含碳量比大于1的含碳化合物形成金刚石晶体和金刚石膜的方法。 施加A热丝以解离预混合溶液的汽化前体并产生氧化和蚀刻自由基,例如OH。 O,H以及碳沉积基团如CH3。 石墨和无定形碳沉积被抑制或优先蚀刻,导致优质金刚石晶体和金刚石膜的净沉积。

    Method of polishing diamond films
    4.
    发明授权
    Method of polishing diamond films 失效
    抛光金刚石薄膜的方法

    公开(公告)号:US06284315B1

    公开(公告)日:2001-09-04

    申请号:US09483433

    申请日:2000-01-14

    申请人: Yonhua Tzeng

    发明人: Yonhua Tzeng

    IPC分类号: C23C1600

    摘要: An improved process for smoothing the surface of a diamond or diamond film comprises placing the surface of the diamond against the surface of a metal plate and heating the diamond and the plate to a temperature greater than the melting point of metal carbide and less than the melting point of the metal itself. The carbon atoms in the diamond diffuse or dissolve through solid state diffusion into the metal to form metal carbide. The metal carbide melts and around the points of contact between the diamond and the metal surface, which accelerates the diffusion or dissolution of the diamond and thereby accelerates the smoothing of the diamond surface. When the surface of the diamond is smoothed, it is cooled, removed from the plate, and cleaned of residual metal carbide.

    摘要翻译: 用于平滑金刚石或金刚石膜的表面的改进方法包括将金刚石的表面放置在金属板的表面上并将金刚石和板加热到大于金属碳化物的熔点并小于熔化的温度 点金属本身。 金刚石中的碳原子通过固态扩散扩散或溶解到金属中以形成金属碳化物。 金刚石碳化物和金刚石与金属表面之间的接触点周围熔化,这加速了金刚石的扩散或溶解,从而加速了金刚石表面的平滑化。 当金刚石的表面平滑时,将其冷却,从板上取下,并清除剩余的金属碳化物。

    Spiral hollow cathode
    5.
    发明授权
    Spiral hollow cathode 失效
    螺旋空心阴极

    公开(公告)号:US5007373A

    公开(公告)日:1991-04-16

    申请号:US356433

    申请日:1989-05-24

    IPC分类号: C23C16/27 C23C16/503 H01J1/02

    摘要: A spiral hollow cathode having adjacent layers which are equivalent to a two-dimensional array of small hollow cathodes. The cathode may be used for producing large area electron beams and for plasma-assisted deposition of films such as diamond over a large area without requiring heating external to the plasma itself.

    摘要翻译: 具有相当于小空心阴极的二维阵列的相邻层的螺旋空心阴极。 阴极可以用于制造大面积电子束,并且用于在大面积上等离子体辅助沉积诸如金刚石的膜,而不需要在等离子体本身之外加热。

    Method of synthesizing cubic boron nitride films
    6.
    发明授权
    Method of synthesizing cubic boron nitride films 失效
    合成立方氮化硼薄膜的方法

    公开(公告)号:US6153061A

    公开(公告)日:2000-11-28

    申请号:US257572

    申请日:1999-02-25

    IPC分类号: C23C14/06 C23C14/34 C23C14/35

    摘要: A method of forming cubic phase boron nitride films in which a hexagonal boron nitride film target is positioned in front of an RF magnetron sputtering gun and is impacted with ions to cause atoms of boron and nitrogen to be sputtered away from the target and toward a substrate. At the same time, electrons are emitted into the system by an electron emitter, which electrons are attracted to the substrate as the boron and nitrogen atoms are being deposited on the substrate. The electrons cause the boron and nitrogen atoms to be reformed on the substrate as cubic phase boron nitride while suppressing the formation of other, less desirable forms of boron nitride films.

    摘要翻译: 一种形成立方氮化硼膜的方法,其中六方氮化硼膜靶位于RF磁控溅射枪的前面,并且与离子冲击以使硼和氮的原子溅射离开靶并朝向衬底 。 同时,电子通过电子发射器发射到系统中,当硼和氮原子沉积在衬底上时,电子被吸引到衬底上。 电子使硼和氮原子在基板上重整为立方相氮化硼,同时抑制形成其它不理想形式的氮化硼膜。

    Capacitor method for improved oxide dielectric
    7.
    发明授权
    Capacitor method for improved oxide dielectric 失效
    改善氧化物电介质的电容方法

    公开(公告)号:US5141603A

    公开(公告)日:1992-08-25

    申请号:US595648

    申请日:1990-10-11

    IPC分类号: C25D11/12 H01G4/10 H01L21/02

    CPC分类号: H01L28/40 C25D11/12 H01G4/10

    摘要: Capacitor structure capable of achieving increased energy storage density is disclosed together with a fabrication sequence for the capacitor and its anodic oxide dielectric material. Soft porous aluminum oxide which has been formed in a first anodization step and has been densified or transformed to hard barrier oxide in a second anodization step is preferred for the capacitor dielectric material. The first anodization may be performed in a sulfuric acid electrolyte while the second anodization may be performed in a boric acid electrolyte. The boric acid may be diluted with ethylene glycol. The disclosed capacitor is fabricated on a silicon wafer substrate.

    摘要翻译: 与电容器及其阳极氧化物介电材料的制造顺序一起公开能够实现增加的储能密度的电容器结构。 对于电容器电介质材料,优选在第一阳极氧化步骤中形成并在第二阳极氧化步骤中被致密化或转变成硬质阻挡氧化物的软质多孔氧化铝。 第一阳极氧化可以在硫酸电解质中进行,而第二阳极氧化可以在硼酸电解质中进行。 硼酸可用乙二醇稀释。 所公开的电容器制造在硅晶片衬底上。

    Thin film oxide dielectric structure and method
    8.
    发明授权
    Thin film oxide dielectric structure and method 失效
    薄膜氧化物介电结构及方法

    公开(公告)号:US4936957A

    公开(公告)日:1990-06-26

    申请号:US174063

    申请日:1988-03-28

    IPC分类号: C25D11/12 H01G9/00

    CPC分类号: H01G9/0029 C25D11/12

    摘要: A metallic oxide such as aluminum oxide of significantly improved electrical properties is disclosed. The method of oxide formation includes a combination of soft porous anodization followed by transformation to a hard barrier form of oxide using inter alia low temperature electrolytes, constant voltage anodizing, and timely rate of current change responsive termination of the anodizing process. Use of the resulting oxide in electrical insulation, optic and other environments is contemplated.

    摘要翻译: 公开了一种金属氧化物,例如具有显着改善的电性能的氧化铝。 氧化物形成的方法包括软多孔阳极氧化,然后使用特别是低温电解质,恒定电压阳极氧化以及电流变化的响应终止阳极氧化过程的转变为硬阻挡形式的氧化物的组合。 预期在电绝缘,光学和其它环境中使用所得到的氧化物。