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公开(公告)号：US08569650B2
公开(公告)日：2013-10-29
申请号：US13565455
申请日：2012-08-02
CPC分类号： B23K26/03 , B23K26/06 , B23K26/0624 , B23K26/082 , B23K26/0853 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/50 , H01L31/022441 , H01L31/0682 , H01L31/18 , Y02E10/547
摘要： Embodiments of the present invention generally provide methods and apparatus for material removal using lasers in the fabrication of solar cells. In one embodiment, an apparatus is provided that removes portions of a dielectric layer deposited on a solar cell substrate according to a desired pattern. In certain embodiments, methods for removing a portion of a material via a laser without damaging the underlying substrate are provided. In one embodiment, the intensity profile of the beam is adjusted so that the difference between the maximum and minimum intensity within a spot formed on a substrate surface is reduced to an optimum range. In one example, the substrate is positioned such that the peak intensity at the center versus the periphery of the substrate is lowered. In one embodiment, the pulse energy is improved to provide thermal stress and physical lift-off of a desired portion of a dielectric layer.
摘要翻译： 本发明的实施例一般提供了在制造太阳能电池中使用激光去除材料的方法和装置。 在一个实施例中，提供了根据期望的图案去除沉积在太阳能电池基板上的电介质层的部分的装置。 在某些实施例中，提供了用于通过激光去除材料的一部分而不损坏下面的衬底的方法。 在一个实施例中，调整光束的强度分布，使得在衬底表面上形成的斑点内的最大和最小强度之间的差减小到最佳范围。 在一个示例中，衬底被定位成使得在中心处的衬底的峰值强度相对于衬底的周边被降低。 在一个实施例中，改善脉冲能量以提供电介质层的期望部分的热应力和物理剥离。
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公开(公告)号：US08258426B2
公开(公告)日：2012-09-04
申请号：US12545488
申请日：2009-08-21
CPC分类号： B23K26/03 , B23K26/06 , B23K26/0624 , B23K26/082 , B23K26/0853 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/50 , H01L31/022441 , H01L31/0682 , H01L31/18 , Y02E10/547
摘要： Embodiments of the present invention generally provide methods and apparatus for material removal using lasers in the fabrication of solar cells. In one embodiment, an apparatus is provided that precisely removes portions of a dielectric layer deposited on a solar cell substrate according to a desired pattern and deposits a conductive layer over the patterned dielectric layer. In one embodiment, the apparatus also removes portions of the conductive layer in a desired pattern. In certain embodiments, methods for removing a portion of a material via a laser without damaging the underlying substrate are provided. In one embodiment, the intensity profile of the beam is adjusted so that the difference between the maximum and minimum intensity within a spot formed on a substrate surface is reduced to an optimum range. In one example, the substrate is positioned such that the peak intensity at the center versus the periphery of the substrate is lowered. In one embodiment, the pulse energy is improved to provide thermal stress and physical lift-off of a desired portion of a dielectric layer.
摘要翻译： 本发明的实施例一般提供了在制造太阳能电池中使用激光去除材料的方法和装置。 在一个实施例中，提供了一种装置，其根据期望的图案精确地去除沉积在太阳能电池基板上的电介质层的部分，并且在图案化的电介质层上沉积导电层。 在一个实施例中，该装置还以期望的图案去除导电层的部分。 在某些实施例中，提供了用于通过激光去除材料的一部分而不损坏下面的衬底的方法。 在一个实施例中，调整光束的强度分布，使得在衬底表面上形成的斑点内的最大和最小强度之间的差减小到最佳范围。 在一个示例中，衬底被定位成使得在中心处的衬底的峰值强度相对于衬底的周边被降低。 在一个实施例中，改善脉冲能量以提供电介质层的期望部分的热应力和物理剥离。
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公开(公告)号：US20120295440A1
公开(公告)日：2012-11-22
申请号：US13565455
申请日：2012-08-02
IPC分类号： H01L21/768 , B23K26/36
CPC分类号： B23K26/03 , B23K26/06 , B23K26/0624 , B23K26/082 , B23K26/0853 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/50 , H01L31/022441 , H01L31/0682 , H01L31/18 , Y02E10/547
摘要： Embodiments of the present invention generally provide methods and apparatus for material removal using lasers in the fabrication of solar cells. In one embodiment, an apparatus is provided that removes portions of a dielectric layer deposited on a solar cell substrate according to a desired pattern. In certain embodiments, methods for removing a portion of a material via a laser without damaging the underlying substrate are provided. In one embodiment, the intensity profile of the beam is adjusted so that the difference between the maximum and minimum intensity within a spot formed on a substrate surface is reduced to an optimum range. In one example, the substrate is positioned such that the peak intensity at the center versus the periphery of the substrate is lowered. In one embodiment, the pulse energy is improved to provide thermal stress and physical lift-off of a desired portion of a dielectric layer.
摘要翻译： 本发明的实施例一般提供了在制造太阳能电池中使用激光去除材料的方法和装置。 在一个实施例中，提供了根据期望的图案去除沉积在太阳能电池基板上的电介质层的部分的装置。 在某些实施例中，提供了用于通过激光去除材料的一部分而不损坏下面的衬底的方法。 在一个实施例中，调整光束的强度分布，使得在衬底表面上形成的斑点内的最大和最小强度之间的差减小到最佳范围。 在一个示例中，衬底被定位成使得在中心处的衬底的峰值强度相对于衬底的周边被降低。 在一个实施例中，改善脉冲能量以提供电介质层的期望部分的热应力和物理剥离。
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公开(公告)号：US20100055901A1
公开(公告)日：2010-03-04
申请号：US12545488
申请日：2009-08-21
CPC分类号： B23K26/03 , B23K26/06 , B23K26/0624 , B23K26/082 , B23K26/0853 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/50 , H01L31/022441 , H01L31/0682 , H01L31/18 , Y02E10/547
摘要： Embodiments of the present invention generally provide methods and apparatus for material removal using lasers in the fabrication of solar cells. In one embodiment, an apparatus is provided that precisely removes portions of a dielectric layer deposited on a solar cell substrate according to a desired pattern and deposits a conductive layer over the patterned dielectric layer. In one embodiment, the apparatus also removes portions of the conductive layer in a desired pattern. In certain embodiments, methods for removing a portion of a material via a laser without damaging the underlying substrate are provided. In one embodiment, the intensity profile of the beam is adjusted so that the difference between the maximum and minimum intensity within a spot formed on a substrate surface is reduced to an optimum range. In one example, the substrate is positioned such that the peak intensity at the center versus the periphery of the substrate is lowered. In one embodiment, the pulse energy is improved to provide thermal stress and physical lift-off of a desired portion of a dielectric layer.
摘要翻译： 本发明的实施例一般提供了在制造太阳能电池中使用激光去除材料的方法和装置。 在一个实施例中，提供了一种装置，其根据期望的图案精确地去除沉积在太阳能电池基板上的电介质层的部分，并且在图案化的电介质层上沉积导电层。 在一个实施例中，该装置还以期望的图案去除导电层的部分。 在某些实施例中，提供了用于通过激光去除材料的一部分而不损坏下面的衬底的方法。 在一个实施例中，调整光束的强度分布，使得在衬底表面上形成的斑点内的最大和最小强度之间的差减小到最佳范围。 在一个示例中，衬底被定位成使得在中心处的衬底的峰值强度相对于衬底的周边被降低。 在一个实施例中，改善脉冲能量以提供电介质层的期望部分的热应力和物理剥离。
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公开(公告)号：US08283199B2
公开(公告)日：2012-10-09
申请号：US12624668
申请日：2009-11-24
IPC分类号： H01L21/28 , H01L21/312 , H01L31/0224
CPC分类号： H01L31/022425 , H01L31/068 , H01L31/0682 , H01L31/0747 , Y02E10/547
摘要： Embodiments of the present invention generally provide methods for forming conductive structures on the surfaces of a solar cell. In one embodiment, conductive structures are formed on the front surface of a solar cell by depositing a sacrificial polymer layer, forming patterned lines in the sacrificial polymer via a fluid jet, depositing metal layers over the front surface of the solar cell, and performing lift off of the metal layers deposited over the sacrificial polymer by dissolving the sacrificial polymer with a water based solvent. In another embodiment, conductive structures are formed on the back surface of a solar cell by depositing a sacrificial polymer layer, forming patterned lines in the sacrificial polymer via a fluid jet, depositing a metal layer over the back surface of the solar cell, and performing lift off of the metal layer deposited over the sacrificial polymer by dissolving the sacrificial polymer with a water based solvent, and completing selective metallization of the remaining metal lines.
摘要翻译： 本发明的实施例通常提供在太阳能电池的表面上形成导电结构的方法。 在一个实施例中，通过沉积牺牲聚合物层在导电结构的前表面上形成导电结构，通过流体射流在牺牲聚合物中形成图案线，在太阳能电池的前表面上沉积金属层，并执行电梯 通过用水基溶剂溶解牺牲聚合物来沉积在牺牲聚合物上的金属层。 在另一个实施例中，通过沉积牺牲聚合物层，在牺牲聚合物中形成图案化线，经由流体射流，在太阳能电池的背面上沉积金属层，并在 通过用水基溶剂溶解牺牲聚合物，从而沉积在牺牲聚合物上沉积的金属层，并完成其余金属线的选择性金属化。
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公开(公告)号：US20130034932A1
公开(公告)日：2013-02-07
申请号：US13571685
申请日：2012-08-10
IPC分类号： H01L31/18
CPC分类号： H01L31/0322 , Y02E10/541
摘要： Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment of the present invention, a method is described comprising of providing a first material comprising an alloy of a) a group IIIA-based material and b) at least one other material. The material may be included in an amount sufficient so that no liquid phase of the alloy is present within the first material in a temperature range between room temperature and a deposition or pre-deposition temperature higher than room temperature, wherein the group IIIA-based material is otherwise liquid in that temperature range. The other material may be a group IA material. A precursor material may be formulated comprising a) particles of the first material and b) particles containing at least one element from the group consisting of: group IB, IIIA, VIA element, alloys containing any of the foregoing elements, or combinations thereof. The temperature range described above may be between about 20° C. and about 200° C. It should be understood that the alloy may have a higher melting temperature than a melting temperature of the IIIA-based material in elemental form.
摘要翻译： 提供了用于从基于固体IIIA的颗粒形成薄膜的方法和装置。 在本发明的一个实施方案中，描述了一种方法，其包括提供包含a）基于IIIA族的材料和b）至少一种其它材料的合金的第一材料。 可以以足够的量包含材料，使得在室温和高于室温的沉积或预沉积温度之间的温度范围内，第一材料中不存在液相，其中基于IIIA族的材料 在该温度范围内为液体。 另一种材料可以是IA族材料。 可以配制前体材料，其包括：a）第一材料的颗粒，和b）含有至少一种元素的颗粒，所述元素包括：IB，IIIA族，VIA族元素，含有任何上述元素的合金，或其组合。 上述温度范围可以在约20℃至约200℃之间。应当理解，该合金可以具有比基于IIIA的材料以元素形式的熔融温度更高的熔融温度。
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公开(公告)号：US20110114182A1
公开(公告)日：2011-05-19
申请号：US12776353
申请日：2010-05-07
IPC分类号： H01L31/0264 , H01L31/18
CPC分类号： H01L31/0322 , Y02E10/541
摘要： Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment of the present invention, a method is described comprising of providing a first material comprising an alloy of a) a group IIIA-based material and b) at least one other material. The material may be included in an amount sufficient so that no liquid phase of the alloy is present within the first material in a temperature range between room temperature and a deposition or pre-deposition temperature higher than room temperature, wherein the group IIIA-based material is otherwise liquid in that temperature range. The other material may be a group IA material. A precursor material may be formulated comprising a) particles of the first material and b) particles containing at least one element from the group consisting of: group IB, IIIA, VIA element, alloys containing any of the foregoing elements, or combinations thereof. The temperature range described above may be between about 20° C. and about 200° C. It should be understood that the alloy may have a higher melting temperature than a melting temperature of the IIIA-based material in elemental form.
摘要翻译： 提供了用于从基于固体IIIA的颗粒形成薄膜的方法和装置。 在本发明的一个实施方案中，描述了一种方法，其包括提供包含a）基于IIIA族的材料和b）至少一种其它材料的合金的第一材料。 可以以足够的量包含材料，使得在室温和高于室温的沉积或预沉积温度之间的温度范围内，第一材料中不存在液相，其中基于IIIA族的材料 在该温度范围内为液体。 另一种材料可以是IA族材料。 可以配制前体材料，其包括：a）第一材料的颗粒，和b）含有至少一种元素的颗粒，所述元素包括：IB，IIIA族，VIA族元素，含有任何上述元素的合金，或其组合。 上述温度范围可以在约20℃至约200℃之间。应当理解，该合金可以具有比基于IIIA的材料以元素形式的熔融温度更高的熔融温度。
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公开(公告)号：US20110065227A1
公开(公告)日：2011-03-17
申请号：US12559838
申请日：2009-09-15
申请人： Tzay-Fa Su , David Morishige , David Tanner , Chris Eberspacher
发明人： Tzay-Fa Su , David Morishige , David Tanner , Chris Eberspacher
CPC分类号： H01L31/18 , B23K26/364 , H01L31/046 , H01L31/0463 , Y02E10/50
摘要： Embodiments of the present invention generally relate to an automated production line using a common laser scribe module for providing consistent scribe lines in multiple layers during the formation of thin film photovoltaic modules. The common laser scribe module includes a plurality of identical, programmable laser tools configured to emit radiation at a common wavelength. Substrates flowing through the production line are tracked by a system controller, which identifies available laser tools within the common laser scribe module and routes substrates to available tools for scribing features in one or more layers disposed on the substrates. The system controller also sets and controls laser parameters, such as power, pulse frequency, pulse width, and laser pattern, in order to accurately and consistently produce scribed lines in the appropriate material layer of the substrate.
摘要翻译： 本发明的实施方案一般涉及使用公共激光划片模块的自动化生产线，用于在薄膜光伏模块的形成期间在多层中提供一致的划线。 常见的激光划片模块包括多个相同的可编程激光工具，其被配置为发射共同波长的辐射。 流经生产线的基板由系统控制器跟踪，系统控制器识别公共激光划片模块内的可用激光工具，并将基板路由到可用于在基板上设置的一个或多个层中的划线特征的工具。 系统控制器还设置和控制诸如功率，脉冲频率，脉冲宽度和激光图案的激光器参数，以便准确且一致地在衬底的适当材料层中产生划线。
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公开(公告)号：US20100291758A1
公开(公告)日：2010-11-18
申请号：US12304683
申请日：2007-06-12
CPC分类号： H01L31/0322 , Y02E10/541
摘要： Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment of the present invention, a method is described comprising of providing a first material comprising an alloy of a) a group IIIA-based material and b) at least one other material. The material may be included in an amount sufficient so that no liquid phase of the alloy is present within the first material in a temperature range between room temperature and a deposition or pre-deposition temperature higher than room temperature, wherein the group IIIA-based material is otherwise liquid in that temperature range. The other material may be a group IA material. A precursor material may be formulated comprising a) particles of the first material and b) particles containing at least one element from the group consisting of: group IB, IIIA, VIA element, alloys containing any of the foregoing elements, or combinations thereof. The temperature range described above may be between about 20° C. and about 200° C. It should be understood that the alloy may have a higher melting temperature than a melting temperature of the IIIA-based material in elemental form.
摘要翻译： 提供了用于从基于固体IIIA的颗粒形成薄膜的方法和装置。 在本发明的一个实施方案中，描述了一种方法，其包括提供包含a）基于IIIA族的材料和b）至少一种其它材料的合金的第一材料。 可以以足够的量包含材料，使得在室温和高于室温的沉积或预沉积温度之间的温度范围内，第一材料中不存在液相，其中基于IIIA族的材料 在该温度范围内为液体。 另一种材料可以是IA族材料。 可以配制前体材料，其包括：a）第一材料的颗粒，和b）含有至少一种元素的颗粒，所述元素包括：IB，IIIA族，VIA族元素，含有任何上述元素的合金，或其组合。 上述温度范围可以在约20℃至约200℃之间。应当理解，该合金可以具有比基于IIIA的材料以元素形式的熔融温度更高的熔融温度。
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公开(公告)号：US20080057203A1
公开(公告)日：2008-03-06
申请号：US11762058
申请日：2007-06-12
IPC分类号： B05D3/04
CPC分类号： H01L31/0322 , Y02E10/541
摘要： Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment, a process for forming solid particles is provided. The method includes providing a first suspension of solid and/or liquid particles containing at least one group IIIA element. A material may be added to substantially increase the melting point of at least one set of group IIIA-containing particles in the suspension into higher-melting solid particles comprising an alloy of the group IIIA element and at least a part of the added material. The suspension may be deposited onto a substrate to form a precursor layer on the substrate and the precursor layer is reacted in a suitable atmosphere to form a film.
摘要翻译： 提供了用于从基于固体IIIA的颗粒形成薄膜的方法和装置。 在一个实施方案中，提供了形成固体颗粒的方法。 该方法包括提供含有至少一种IIIA族元素的固体和/或液体颗粒的第一悬浮液。 可以加入材料以将悬浮液中至少一组含IIIA族颗粒的熔点大大增加到包含IIIA族元素和至少一部分添加材料的合金的更高熔点固体颗粒中。 悬浮液可以沉积在基底上以在基底上形成前体层，并且前体层在合适的气氛中反应以形成膜。
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