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11 条记录 (耗时 0.022 秒)

    Endpoint detection in substrate fabrication processes
    1.
    发明授权
    Endpoint detection in substrate fabrication processes 失效
    基板制造工艺中的端点检测

    公开(公告)号：US06813534B2

    公开(公告)日：2004-11-02

    申请号：US10081088

    申请日：2002-02-20

    申请人： Zhifeng Sui ,  Paul E Luscher ,  Nils Johansson ,  Michael D Welch

    发明人： Zhifeng Sui ,  Paul E Luscher ,  Nils Johansson ,  Michael D Welch

    IPC分类号： G06F1900

    CPC分类号： H01L21/67253 ,  H01J37/32935 ,  H01J37/32963

    摘要： In an endpoint detection method for a process performed in a substrate processing chamber with an energized gas, a process variable of the process is detected. The process variable comprising at least one of (i) a radiation emitted by the energized gas, (ii) a radiation reflected from a substrate in the chamber, (iii) a reflected power level of the energized gas, and (iv) a temperature in the chamber. An endpoint signal is issued when the process variable is indicative of an endpoint of the process. A process parameter of the process is also detected, the process parameter comprising at least one of (i) a source power, (ii) an RF forward power, reflected power, or match components, (iii) an RF peak-to-peak voltage, current or phase, (iv) a DC bias level, (v) a chamber pressure or throttle valve position, (vi) a gas composition or flow rate, (vii) a substrate temperature or composition, (viii) a temperature of a chamber component or wall, and (ix) a magnetic confinement level or magnet position. The endpoint signal is determined to be true or false by evaluating the process parameter.

    摘要翻译： 在具有通电气体的基板处理室中执行的处理的端点检测方法中，检测该处理的过程变量。 所述过程变量包括以下中的至少一个：（i）由所述通电气体发射的辐射，（ii）从所述室中的衬底反射的辐射，（iii）所述通电气体的反射功率水平，以及（iv） 在房间里 当过程变量指示过程的终点时，发出端点信号。 还检测该过程的过程参数，该过程参数包括以下中的至少一个：（i）源功率，（ii）RF正向功率，反射功率或匹配分量，（iii）RF峰 - 峰 电压，电流或相位，（iv）DC偏置电平，（v）腔室压力或节流阀位置，（vi）气体组成或流速，（vii）衬底温度或组成，（viii） 腔室部件或壁，以及（ix）磁限制水平或磁体位置。 通过评估过程参数将端点信号确定为真或假。

    Bandpass photon detector
    2.
    发明授权
    Bandpass photon detector 失效
    带通光子探测器

    公开(公告)号：US5995235A

    公开(公告)日：1999-11-30

    申请号：US800003

    申请日：1997-02-13

    申请人： Zhifeng Sui ,  Paul E. Luscher

    发明人： Zhifeng Sui ,  Paul E. Luscher

    IPC分类号： G01J3/443 ,  G01J1/04 ,  G01J1/42 ,  G01N21/25 ,  G01N21/71 ,  G02B6/34 ,  H01L31/12 ,  H05H1/00 ,  G01J3/51

    CPC分类号： G01N21/71 ,  G01N21/255 ,  G02B6/29362

    摘要： Apparatus for bandpass photon detection containing a lens for collimating input light, a bandpass filter element, and a photomultiplier detector. Light passes from a source into the lens which collimates the light which then is incident upon the filter. The filter is tuned to a particular band of wavelengths, such that out of all of the wavelengths that are incident upon the front side of the filter, a wavelength band is propagated through the filter and passes from the filter to the photomultiplier detector, such that the output of the photomultiplier detector is a voltage level representing the energy content within that wavelength band. In various alternative embodiments, the bandpass photon detectors are arranged in a number of cascade arrangements such that multiple wavelength bands are simultaneously detected.

    摘要翻译： 用于带通光子检测的装置，包括用于准直输入光的透镜，带通滤光器元件和光电倍增管检测器。 光从源通过透镜，该透镜使然后入射到过滤器上的光准直。 滤波器被调谐到特定波长带，使得在入射到滤波器前侧的所有波长中，波长带传播通过滤波器并从滤波器传递到光电倍增管检测器，使得 光电倍增管检测器的输出是表示该波长带内的能量含量的电压电平。 在各种替代实施例中，带通光子检测器被布置成多个级联布置，使得同时检测多个波长带。

    Interferometric endpoint detection in a substrate etching process
    6.
    发明授权
    Interferometric endpoint detection in a substrate etching process 失效
    基板蚀刻工艺中的干涉测量端点检测

    公开(公告)号：US06905624B2

    公开(公告)日：2005-06-14

    申请号：US10615159

    申请日：2003-07-07

    申请人： Coriolan I. Frum ,  Zhifeng Sui ,  Hongqing Shan

    发明人： Coriolan I. Frum ,  Zhifeng Sui ,  Hongqing Shan

    IPC分类号： H01L21/66 ,  C23F1/00 ,  C23F4/00 ,  C23F4/02 ,  G01N21/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/461 ,  H01L21/465

    CPC分类号： H01J37/32963 ,  H01J37/32935

    摘要： A method of etching a substrate includes placing a substrate in a process zone. The substrate has a material with a thickness, and the material has exposed regions between features of a patterned mask. An etchant gas is introduced into the process zone. The etchant gas is energized to etch the material. An endpoint of etching the material of the substrate is determined by (i) reflecting a light beam from the substrate, the light beam having a wavelength selected to have a coherence length in the substrate of from about 1.5 to about 4 times the thickness of the material, and (ii) detecting the reflected light beam to determine an endpoint of the substrate etching process. Additionally, the wavelength of the light beam can be selected to maximize an absorption differential that is a difference between the absorption of the light beam in the patterned mask and the absorption of the light beam in the material.

    摘要翻译： 蚀刻衬底的方法包括将衬底放置在处理区中。 衬底具有厚度的材料，并且材料在图案化掩模的特征之间具有曝光区域。 将蚀刻剂气体引入过程区域。 蚀刻剂气体通电以蚀刻材料。 通过（i）反射来自衬底的光束来确定蚀刻衬底的材料的端点，所述光束具有被选择为具有衬底中的相干长度的波长为其厚度的约1.5至约4倍 材料，和（ii）检测反射光束以确定基板蚀刻工艺的端点。 此外，可以选择光束的波长以最大化作为图案化掩模中的光束的吸收与材料中光束的吸收之间的差异的吸收差异。

    Monitoring dimensions of features at different locations in the processing of substrates
    7.
    发明授权
    Monitoring dimensions of features at different locations in the processing of substrates 失效
    监测基板加工中不同位置特征的尺寸

    公开(公告)号：US06829056B1

    公开(公告)日：2004-12-07

    申请号：US10646943

    申请日：2003-08-21

    申请人： Michael Barnes ,  John Holland ,  Hongqing Shan ,  Bryan Y. Pu ,  Mohit Jain ,  Zhifeng Sui ,  Michael D. Armacost ,  Neil E. Hanson ,  Diana Xiaobing Ma ,  Ashok K. Sinha ,  Dan Maydan

    发明人： Michael Barnes ,  John Holland ,  Hongqing Shan ,  Bryan Y. Pu ,  Mohit Jain ,  Zhifeng Sui ,  Michael D. Armacost ,  Neil E. Hanson ,  Diana Xiaobing Ma ,  Ashok K. Sinha ,  Dan Maydan

    IPC分类号： G01B1114

    CPC分类号： H01L21/67253 ,  H01J37/32935 ,  H01L21/67069

    摘要： A substrate processing apparatus has a chamber having a substrate support, gas distributor, gas energizer, and gas exhaust port. A process monitor is provided to monitor features in a first region of the substrate and generate a corresponding first signal, and to monitor features in a second region of the substrate and generate a second signal. A chamber controller receives and evaluates the first and second signals, and operates the chamber in relation to the signals. For example, the chamber controller can select a process recipe depending upon the signal values. The chamber controller can also set a process parameter at a first level in a first processing sector and at a second level in a second processing sector. The apparatus provides a closed control loop to independently monitor and control processing of features at different regions of the substrate.

    摘要翻译： 基板处理装置具有具有基板支撑件，气体分配器，气体激励器和排气口的腔室。 提供过程监视器以​​监测衬底的第一区域中的特征并产生相应的第一信号，并且监测衬底的第二区域中的特征并产生第二信号。 室控制器接收并评估第一和第二信号，并相对于信号操作室。 例如，腔室控​​制器可以根据信号值选择工艺配方。 腔室控制器还可以在第一处理扇区中将处理参数设置在第一电平处，并在第二处理扇区中将第二电平设置为第二电平。 该装置提供一个闭合的控制回路以独立地监测和控制基板的不同区域处的特征的处理。

    Methods for processing substrates in process systems having shared resources
    9.
    发明授权
    Methods for processing substrates in process systems having shared resources 有权
    在具有共享资源的处理系统中处理衬底的方法

    公开(公告)号：US08496756B2

    公开(公告)日：2013-07-30

    申请号：US12915240

    申请日：2010-10-29

    申请人： James P. Cruse ,  Dermot Cantwell ,  Ming Xu ,  Charles Hardy ,  Benjamin Schwarz ,  Kenneth S. Collins ,  Andrew Nguyen ,  Zhifeng Sui ,  Evans Lee

    发明人： James P. Cruse ,  Dermot Cantwell ,  Ming Xu ,  Charles Hardy ,  Benjamin Schwarz ,  Kenneth S. Collins ,  Andrew Nguyen ,  Zhifeng Sui ,  Evans Lee

    IPC分类号： B08B6/00

    CPC分类号： H01L21/6719 ,  H01J37/32899

    摘要： Methods for processing substrates in twin chamber processing systems having first and second process chambers and shared processing resources are provided herein. In some embodiments, a method may include flowing a process gas from a shared gas panel to a processing volume of the first process chamber and to a processing volume of the second process chamber; forming a first plasma in the first processing volume to process the first substrate and a second plasma to process the second substrate; monitoring the first processing volume and the second processing volume to determine if a process endpoint is reached in either volume; and either terminating the first and second plasma simultaneously when a first endpoint is reached; or terminating the first plasma when a first endpoint is reached in the first processing volume while continuing to provide the second plasma in the second processing volume until a second endpoint is reached.

    摘要翻译： 本文提供了具有第一处理室和第二处理室以及共享处理资源的双室处理系统中处理基板的方法。 在一些实施例中，一种方法可以包括将处理气体从共用气体面板流动到第一处理室的处理容积和第二处理室的处理容积; 在所述第一处理体积中形成第一等离子体以处理所述第一基板和第二等离子体以处理所述第二基板; 监测第一处理量和第二处理量以确定任一体积中是否达到过程终点; 并且当达到第一端点时同时终止第一和第二等离子体; 或在第一处理容积中达到第一端点时终止第一等离子体，同时继续在第二处理容积中提供第二等离子体直到达到第二端点。