公开(公告)号：US20220317391A1

公开(公告)日：2022-10-06

申请号：US17640185

申请日：2020-08-25

Applicant: ams AG

Inventor： Jochen Kraft ,  Bernhard Stering ,  Colin Steele ,  Jean Francois Seurin

IPC: G02B6/42

Abstract: A bonded structure comprises a substrate component having a plurality of first pads arranged on or within a surface of the substrate component, and an integrated circuit component having a plurality of second pads arranged on or within a surface of the integrated circuit component. The bonded structure further comprises a plurality of connection elements physically connecting the first pads to the second pads. The surface of the integrated circuit component is tilted obliquely to the surface of the substrate component at a tilt angle that results from nominal variations of surface sizes of the first and second pads.

公开(公告)号：US20140349462A1

公开(公告)日：2014-11-27

申请号：US14352676

申请日：2012-09-18

Applicant: ams AG

Inventor： Bernhard Stering ,  Jörg Siegert ,  Bernhard Löffler

IPC: H01L23/544 ,  H01L21/768

CPC classification number: H01L23/544 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/76879 ,  H01L21/76898 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68377 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor substrate (1) is provided with a structure (3) on an upper side (2), and an additional substrate (4) provided for handling the semiconductor substrate is likewise structured on an upper side (5). The structuring of the additional substrate takes place in at least partial correspondence with the structure of the semiconductor substrate. The structured upper sides of the semiconductor substrate and the additional substrate are positioned such that they face one another and are permanently connected to one another. Subsequently, the semiconductor substrate is thinned from the rear side (6), and the additional substrate is removed at least to such a degree that the structure of the semiconductor substrate is exposed to the extent required for the further use.

Abstract translation: 半导体衬底（1）在上侧（2）上设置有结构（3），并且设置用于处理半导体衬底的附加衬底（4）同样构造在上侧（5）上。 附加衬底的构造与半导体衬底的结构至少部分对应地发生。 半导体衬底和附加衬底的结构化的上侧被定位成使得它们彼此面对并且彼此永久地连接。 随后，半导体衬底从后侧（6）变薄，并且至少去除附加衬底至使得半导体衬底的结构暴露于进一步使用所需的程度的程度。

公开(公告)号：US09917012B2

公开(公告)日：2018-03-13

申请号：US15313489

申请日：2015-05-21

Applicant: ams AG

Inventor： Bernhard Stering

IPC: H01L21/00 ,  H01L21/78 ,  H01L21/56 ,  H01L23/31 ,  H01L21/683 ,  H01L23/00

CPC classification number: H01L21/78 ,  H01L21/561 ,  H01L21/6836 ,  H01L23/3114 ,  H01L24/05 ,  H01L24/13 ,  H01L2221/68327 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/13024

Abstract: A semiconductor substrate (1) is provided with integrated circuits. Dicing trenches (7) are formed in the substrate (1) between the integrated circuits, a polyimide layer (8) spanning the trenches (7) is applied above the integrated circuits, a tape layer (14) is applied above the polyimide layer (8), and a layer portion of the substrate (1) is removed from the substrate side (17) opposite the tape layer (14), until the trenches (7) are opened and dicing of the substrate (1) is thus effected. The polyimide layer (8) is severed in sections (18) above the trenches (7) when the tape layer (14) is removed. The semiconductor chip is provided with a cover layer (11) laterally confining the polyimide layer (8) near the trenches (7), in particular for forming breaking delimitations (9).

公开(公告)号：US10978507B2

公开(公告)日：2021-04-13

申请号：US16346273

申请日：2017-10-19

Applicant: ams AG

Inventor： Sonja Koenig ,  Bernhard Stering ,  Harald Etschmaier

IPC: H01L27/146

Abstract: A method for manufacturing optical sensor arrangements is provided. The method comprises providing at least two optical sensors on a carrier and providing a cover material on the side of the optical sensors facing away from the carrier. The method further comprises providing an aperture for each optical sensor on a top side of the cover material facing away from the carrier and forming at least one trench between the optical sensors from the carrier towards the top side of the cover material, the trench comprising inner walls. Moreover, the method comprises coating the inner walls with an opaque material, such that an inner volume of the trench is free of the opaque material, and singulating of the optical sensor arrangements along the at least one trench. Furthermore, a housing for an optical sensor is provided.

公开(公告)号：US10256147B2

公开(公告)日：2019-04-09

申请号：US15118836

申请日：2015-02-09

Applicant: ams AG

Inventor： Martin Schrems ,  Bernhard Stering ,  Franz Schrank

IPC: H01L21/78 ,  H01L23/00 ,  H01L21/683 ,  H01L21/768

Abstract: The dicing method comprises the steps of providing a substrate (1) of semiconductor material, the substrate having a main surface (10), where integrated components (3) of chips (13) are arranged, and a rear surface (11) opposite the main surface, fastening a first handling wafer above the main surface, thinning the substrate at the rear surface, and forming trenches (20) penetrating the substrate and separating the chips by a single etching step after the substrate has been thinned.

公开(公告)号：US10217715B2

公开(公告)日：2019-02-26

申请号：US15118469

申请日：2015-02-09

Applicant: ams AG

Inventor： Martin Schrems ,  Bernhard Stering ,  Harald Etschmaier

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/48 ,  H01L23/485

Abstract: The semiconductor device comprises a semiconductor substrate (1) with a main surface (10) and a further main surface (11) opposite the main surface, a TSV (3) penetrating the substrate from the main surface to the further main surface, a metallization (13) of the TSV, an under-bump metallization (5) and a bump contact (6) at least partially covering the TSV at the further main surface. The TSV (3) comprises a cavity (15), which may be filled with a gas or liquid. An opening (15′) of the cavity is provided to expose the cavity to the environment.

公开(公告)号：US09842946B2

公开(公告)日：2017-12-12

申请号：US15317641

申请日：2015-05-22

Applicant: ams AG

Inventor： Rainer Minixhofer ,  Bernhard Stering ,  Harald Etschmaier

IPC: H01L31/02 ,  H01L31/0216 ,  H01L31/153 ,  H01L31/0203 ,  H01L31/0232 ,  H01L31/18

CPC classification number: H01L31/02164 ,  H01L27/14678 ,  H01L31/02005 ,  H01L31/02019 ,  H01L31/0203 ,  H01L31/02325 ,  H01L31/153 ,  H01L31/167 ,  H01L31/1876 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/16145 ,  H01L2224/16237 ,  H01L2224/48145 ,  H01L2224/48228 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2224/32145 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

Abstract: The semiconductor device comprises a semiconductor substrate (1), a photosensor (2) integrated in the substrate (1) at a main surface (10), an emitter (12) of radiation mounted above the main surface (10), and a cover (6), which is at least partially transmissive for the radiation, arranged above the main surface (10). The cover (6) comprises a cavity (7), and the emitter (12) is arranged in the cavity (7). A radiation barrier (9) can be provided on a lateral surface of the cavity (7) to inhibit cross-talk between the emitter (12) and the photosensor (2).

公开(公告)号：US09105645B2

公开(公告)日：2015-08-11

申请号：US14352676

申请日：2012-09-18

Applicant: ams AG

Inventor： Bernhard Stering ,  Jörg Siegert ,  Bernhard Löffler

IPC: H01L21/76 ,  H01L23/544 ,  H01L21/768 ,  H01L21/683

CPC classification number: H01L23/544 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/76879 ,  H01L21/76898 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68377 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor substrate (1) is provided with a structure (3) on an upper side (2), and an additional substrate (4) provided for handling the semiconductor substrate is likewise structured on an upper side (5). The structuring of the additional substrate takes place in at least partial correspondence with the structure of the semiconductor substrate. The structured upper sides of the semiconductor substrate and the additional substrate are positioned such that they face one another and are permanently connected to one another. Subsequently, the semiconductor substrate is thinned from the rear side (6), and the additional substrate is removed at least to such a degree that the structure of the semiconductor substrate is exposed to the extent required for the further use.

Abstract translation: 半导体衬底（1）在上侧（2）上设置有结构（3），并且设置用于处理半导体衬底的附加衬底（4）同样构造在上侧（5）上。 附加衬底的构造与半导体衬底的结构至少部分对应地发生。 半导体衬底和附加衬底的结构化的上侧被定位成使得它们彼此面对并且彼此永久地连接。 随后，半导体衬底从后侧（6）变薄，并且至少去除附加衬底至使得半导体衬底的结构暴露于进一步使用所需的程度的程度。