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公开(公告)号：US09612119B2
公开(公告)日：2017-04-04
申请号：US14158765
申请日：2014-01-17
申请人： mCube Inc.
IPC分类号： G01C19/00 , G01P3/44 , G01P9/00 , G01P15/08 , G01C19/5776
CPC分类号： G01C19/5776
摘要： A system can include a MEMS gyroscope having a MEMS resonator overlying a CMOS IC substrate. The CMOS IC substrate can include an AGC loop circuit coupled to the MEMS gyroscope. The AGC loop acts in a way such that generated desired signal amplitude out of the drive signal maintains MEMS resonator velocity at a desired frequency and amplitude. A benefit of the AGC loop is that the charge pump of the HV driver inherently includes a ‘time constant’ for charging up of its output voltage. The system incorporates the Low pass functionality in to the AGC loop without requiring additional circuitry.
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公开(公告)号：US09950921B2
公开(公告)日：2018-04-24
申请号：US14930642
申请日：2015-11-02
申请人： mCube Inc.
CPC分类号： B81B7/0022 , B81B3/0086 , B81B2203/0118 , B81B2203/0307 , B81B2207/11 , B81C1/00246 , B81C1/0038 , B81C1/00531 , B81C1/00801 , B81C2201/053
摘要： An integrated circuit includes a substrate member having a surface region and a CMOS IC layer overlying the surface region. The CMOS IC layer has at least one CMOS device. The integrated circuit also includes a bottom isolation layer overlying the CMOS IC layer, a shielding layer overlying a portion of the bottom isolation layer, and a top isolation layer overlying a portion of the bottom isolation layer. The bottom isolation layer includes an isolation region between the top isolation layer and the shielding layer. The integrated circuit also has a MEMS layer overlying the top isolation layer, the shielding layer, and the bottom isolation layer. The MEMS layer includes at least one MEMS structure having at least one movable structure and at least one anchored structure. The at least one anchored structure is coupled to a portion of the top isolation layer, and the at least one movable structure overlies the shielding layer.
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公开(公告)号：US20160176708A1
公开(公告)日：2016-06-23
申请号：US14985388
申请日：2015-12-30
申请人： mCube, Inc.
发明人： Sudheer S. Sridharamurthy , Te-Hse Terrence Lee , Ali J. Rastegar , Mugurel Stancu , Xiao Charles Yang
CPC分类号： B81C1/00801 , B81B3/0013 , B81B3/0086 , B81B7/0022 , B81B7/0064 , B81B2203/0163 , B81B2207/094 , B81C1/00238 , B81C2201/0132 , B81C2201/05 , B81C2203/0735 , H01L27/0688
摘要： A method for fabricating an integrated MEMS-CMOS device uses a micro-fabrication process that realizes moving mechanical structures (MEMS) on top of a conventional CMOS structure by bonding a mechanical structural wafer on top of the CMOS and etching the mechanical layer using plasma etching processes, such as Deep Reactive Ion Etching (DRIE). During etching of the mechanical layer, CMOS devices that are directly connected to the mechanical layer are exposed to plasma. This sometimes causes permanent damage to CMOS circuits and is termed Plasma Induced Damage (PID). Embodiments of the present invention presents methods and structures to prevent or reduce this PID and protect the underlying CMOS circuits by grounding and providing an alternate path for the CMOS circuits until the MEMS layer is completely etched.
摘要翻译： 一种用于制造集成的MEMS-CMOS器件的方法使用微型制造工艺，其通过在CMOS的顶部上结合机械结构晶片并使用等离子体蚀刻来蚀刻机械层来实现在常规CMOS结构之上的移动机械结构（MEMS） 工艺，如深层反应离子蚀刻（DRIE）。 在蚀刻机械层期间，直接连接到机械层的CMOS器件暴露于等离子体。 这有时会导致对CMOS电路的永久性损坏，称为等离子体诱发损伤（PID）。 本发明的实施例提出了防止或减少该PID并且通过接地并为CMOS电路提供替代路径来保护下面的CMOS电路直到MEMS层被完全蚀刻的方法和结构。
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公开(公告)号：US10046964B2
公开(公告)日：2018-08-14
申请号：US14302385
申请日：2014-06-11
申请人： mCube Inc.
摘要： A method for fabricating an integrated MEMS-CMOS device. The method can include providing a substrate member having a surface region and forming a CMOS IC layer having at least one CMOS device overlying the surface region. A bottom isolation layer can be formed overlying the CMOS IC layer and a shielding layer and a top isolation layer can be formed overlying a portion of bottom isolation layer. The bottom isolation layer can include an isolation region between the top isolation layer and the shielding layer. A MEMS layer overlying the top isolation layer, the shielding layer, and the bottom isolation layer, and can be etched to form at least one MEMS structure having at least one movable structure and at least one anchored structure.
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公开(公告)号：US09950924B2
公开(公告)日：2018-04-24
申请号：US14985388
申请日：2015-12-30
申请人： mCube, Inc.
发明人： Sudheer S. Sridharamurthy , Te-Hse Terrence Lee , Ali J. Rastegar , Mugurel Stancu , Xiao Charles Yang
CPC分类号： B81C1/00801 , B81B3/0013 , B81B3/0086 , B81B7/0022 , B81B7/0064 , B81B2203/0163 , B81B2207/094 , B81C1/00238 , B81C2201/0132 , B81C2201/05 , B81C2203/0735 , H01L27/0688
摘要： A method for fabricating an integrated MEMS-CMOS device uses a micro-fabrication process that realizes moving mechanical structures (MEMS) on top of a conventional CMOS structure by bonding a mechanical structural wafer on top of the CMOS and etching the mechanical layer using plasma etching processes, such as Deep Reactive Ion Etching (DRIE). During etching of the mechanical layer, CMOS devices that are directly connected to the mechanical layer are exposed to plasma. This sometimes causes permanent damage to CMOS circuits and is termed Plasma Induced Damage (PID). Embodiments of the present invention presents methods and structures to prevent or reduce this PID and protect the underlying CMOS circuits by grounding and providing an alternate path for the CMOS circuits until the MEMS layer is completely etched.
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公开(公告)号：US20130236988A1
公开(公告)日：2013-09-12
申请号：US13788503
申请日：2013-03-07
申请人： MCUBE, INC.
发明人： Sudheer S. Sridharamurthy , Te-Hse Terrence Lee , Ali J. Rastegar , Mugurel Stancu , Xiao Charles Yang
IPC分类号： H01L29/66
CPC分类号： B81C1/00801 , B81B3/0013 , B81B3/0086 , B81B7/0022 , B81B7/0064 , B81B2203/0163 , B81B2207/094 , B81C1/00238 , B81C2201/0132 , B81C2201/05 , B81C2203/0735 , H01L27/0688
摘要： A method for fabricating an integrated MEMS-CMOS device uses a micro-fabrication process that realizes moving mechanical structures (MEMS) on top of a conventional CMOS structure by bonding a mechanical structural wafer on top of the CMOS and etching the mechanical layer using plasma etching processes, such as Deep Reactive Ion Etching (DRIE). During etching of the mechanical layer, CMOS devices that are directly connected to the mechanical layer are exposed to plasma. This sometimes causes permanent damage to CMOS circuits and is termed Plasma Induced Damage (PID). Embodiments of the present invention presents methods and structures to prevent or reduce this PID and protect the underlying CMOS circuits by grounding and providing an alternate path for the CMOS circuits until the MEMS layer is completely etched.
摘要翻译： 一种用于制造集成的MEMS-CMOS器件的方法使用微型制造工艺，其通过在CMOS的顶部上结合机械结构晶片并使用等离子体蚀刻来蚀刻机械层来实现在常规CMOS结构之上的移动机械结构（MEMS） 工艺，如深层反应离子蚀刻（DRIE）。 在蚀刻机械层期间，直接连接到机械层的CMOS器件暴露于等离子体。 这有时会导致对CMOS电路的永久性损坏，称为等离子体诱发损伤（PID）。 本发明的实施例提出了防止或减少该PID并且通过接地并为CMOS电路提供替代路径来保护下面的CMOS电路直到MEMS层被完全蚀刻的方法和结构。
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公开(公告)号：US10267636B1
公开(公告)日：2019-04-23
申请号：US14987685
申请日：2016-01-04
申请人： mCube, Inc.
发明人： Sudheer S. Sridharamurthy , Tony Maraldo , Zheng-Yao Sun , Wenhua Zhang , Te-Hsi Terrence Lee , Sanjay Bhandari , Joseph Rastegar
IPC分类号： G01C19/5684 , B81C99/00
摘要： A method for a MEMS device comprises determining in a computer system, a first driving signal for the MEMS device in response to a first time delay and to a base driving signal, applying the first driving signal to the MEMS device to induce the MEMS device to operate at a first frequency, determining a second driving signal for the MEMS device in response to a second time delay and to the base driving signal, applying the second driving signal to the MEMS device to induce the MEMS device to operate at a second frequency, determining a first quality factor associated with the MEMS device in response to the first frequency and the second frequency, determining a quality factor associated with the MEMS device in response to the first quality factor, and determining whether the quality factor associated with the MEMS device, exceeds a threshold quality factor.
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公开(公告)号：US10107625B2
公开(公告)日：2018-10-23
申请号：US15442488
申请日：2017-02-24
申请人： mCube Inc.
IPC分类号： G01P3/00 , G01C19/5712 , B81B7/02 , B81B7/00
摘要： A CMOS IC substrate can include sense amplifiers, demodulation circuits and AGC loop circuit coupled to the MEMS gyroscope. The AGC loop acts in a way such that generated desired signal amplitude out of the drive signal maintains MEMS resonator velocity at a desired frequency and amplitude. The system can include charge pumps to create higher voltages as required in the system. The system can incorporate ADC to provide digital outputs that can be read via serial interface such as I2C. The system can also include temperature sensor which can be used to sense and output temperature of the chip and system and can be used to internally or externally compensate the gyroscope sensor measurements for temperature related changes. The CMOS IC substrate can be part of a system which can include a MEMS gyroscope having a MEMS sensor overlying the CMOS IC substrate.
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公开(公告)号：US20170167875A1
公开(公告)日：2017-06-15
申请号：US15442488
申请日：2017-02-24
申请人： mCube Inc.
IPC分类号： G01C19/5712 , B81B7/00 , B81B7/02
CPC分类号： G01C19/5712 , B81B7/008 , B81B7/02 , B81B2201/0242 , G01C19/5776
摘要： A CMOS IC substrate can include sense amplifiers, demodulation circuits and AGC loop circuit coupled to the MEMS gyroscope. The AGC loop acts in a way such that generated desired signal amplitude out of the drive signal maintains MEMS resonator velocity at a desired frequency and amplitude. The system can include charge pumps to create higher voltages as required in the system. The system can incorporate ADC to provide digital outputs that can be read via serial interface such as I2C. The system can also include temperature sensor which can be used to sense and output temperature of the chip and system and can be used to internally or externally compensate the gyroscope sensor measurements for temperature related changes. The CMOS IC substrate can be part of a system which can include a MEMS gyroscope having a MEMS sensor overlying the CMOS IC substrate.
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公开(公告)号：US09276080B2
公开(公告)日：2016-03-01
申请号：US13788503
申请日：2013-03-07
申请人： MCube, Inc.
发明人： Sudheer S. Sridharamurthy , Te-Hse Terrence Lee , Ali J. Rastegar , Mugurel Stancu , Xiao Charles Yang
CPC分类号： B81C1/00801 , B81B3/0013 , B81B3/0086 , B81B7/0022 , B81B7/0064 , B81B2203/0163 , B81B2207/094 , B81C1/00238 , B81C2201/0132 , B81C2201/05 , B81C2203/0735 , H01L27/0688
摘要： A method for fabricating an integrated MEMS-CMOS device uses a micro-fabrication process that realizes moving mechanical structures (MEMS) on top of a conventional CMOS structure by bonding a mechanical structural wafer on top of the CMOS and etching the mechanical layer using plasma etching processes, such as Deep Reactive Ion Etching (DRIE). During etching of the mechanical layer, CMOS devices that are directly connected to the mechanical layer are exposed to plasma. This sometimes causes permanent damage to CMOS circuits and is termed Plasma Induced Damage (PID). Embodiments of the present invention presents methods and structures to prevent or reduce this PID and protect the underlying CMOS circuits by grounding and providing an alternate path for the CMOS circuits until the MEMS layer is completely etched.
摘要翻译： 一种用于制造集成的MEMS-CMOS器件的方法使用微型制造工艺，其通过在CMOS的顶部上结合机械结构晶片并使用等离子体蚀刻来蚀刻机械层来实现在常规CMOS结构之上的移动机械结构（MEMS） 工艺，如深层反应离子蚀刻（DRIE）。 在蚀刻机械层期间，直接连接到机械层的CMOS器件暴露于等离子体。 这有时会导致对CMOS电路的永久性损坏，称为等离子体诱发损伤（PID）。 本发明的实施例提出了防止或减少该PID并且通过接地并为CMOS电路提供替代路径来保护下面的CMOS电路直到MEMS层被完全蚀刻的方法和结构。
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