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公开(公告)号：US10186836B2
公开(公告)日：2019-01-22
申请号：US14879515
申请日：2015-10-09
Applicant: nLIGHT Photonics Corporation
Inventor： Manoj Kanskar
Abstract: A broad area semiconductor diode laser device includes a multiple flared oscillator waveguide including a plurality of component flared oscillator waveguides, each component flared oscillator waveguide including a multimode high reflector facet, a partial reflector facet spaced apart from the high reflector facet, and a flared current injection region extending and widening between the multimode high reflector facet and the partial reflector facet, wherein the ratio of a partial reflector facet width to a high reflector facet width is n:1, where n>1, and wherein the component flared oscillator waveguides of the multiple flared oscillator waveguide are arranged in a row such that portions of the flared current injection regions of adjacently situated component flared oscillator waveguides overlap each other or are in proximity to each other on the order of the wavelength of light emitted by the component flared oscillator waveguides.
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公开(公告)号：US20150255960A1
公开(公告)日：2015-09-10
申请号：US14641093
申请日：2015-03-06
Applicant: nLIGHT Photonics Corporation
Inventor： Manoj Kanskar
CPC classification number: G02B5/09 , G02B5/10 , G02B6/4204 , G02B6/4296 , G02B27/0905 , G02B27/14 , G02B27/30 , H01S3/08059 , H01S5/02248 , H01S5/02284 , H01S5/3054 , H01S5/4031 , H01S5/4043 , H01S5/4062
Abstract: An apparatus includes at least one multijunction diode laser situated to emit a plurality of beams along respective mutually parallel propagation axes, each beam having an associated mutually parallel slow axes and associated collinear fast axes, a fast axis collimator situated to receive and collimate the plurality of beams along the corresponding fast axes so as to produce corresponding fast axis collimated beams that propagate along associated non-parallel axes, and a reflector situated to receive the plurality of fast axis collimated beams and to reflect the beams so that the reflected fast axis collimated beams propagate along substantially parallel axes.
Abstract translation: 一种装置包括至少一个多结二极管激光器，其被设置为沿着相应的相互平行的传播轴发射多个光束，每个光束具有相关联的相互平行的慢轴和相关联的快速轴线，快轴准直器被定位成接收和准直多个 沿着相应的快轴进行光束，以便产生沿相关联的非平行轴传播的对应的快轴准直光束;以及反射器，其被设置为接收多个快轴准直光束并反射光束，使得反射的快轴准直光束 沿着大致平行的轴传播。
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公开(公告)号：US20140301421A1
公开(公告)日：2014-10-09
申请号：US14011661
申请日：2013-08-27
Applicant: nLIGHT Photonics Corporation
Inventor： Manoj Kanskar
CPC classification number: H01S5/2036 , H01S5/0287 , H01S5/0651 , H01S5/1003 , H01S5/1014 , H01S5/1203 , H01S5/2018 , H01S5/22 , H01S2301/16 , H01S2301/18
Abstract: A broad area semiconductor diode laser device includes a multimode high reflector facet, a partial reflector facet spaced from said multimode high reflector facet, and a flared current injection region extending and widening between the multimode high reflector facet and the partial reflector facet, wherein the ratio of a partial reflector facet width to a high reflector facet width is n:1, where n>1. The broad area semiconductor laser device is a flared laser oscillator waveguide delivering improved beam brightness and beam parameter product over conventional straight waveguide configurations.
Abstract translation: 广域半导体二极管激光器件包括多模高反射器面，与所述多模高反射面相隔开的局部反射器面，以及在多模高反射面与部分反射面之间延伸和加宽的扩张电流注入区，其中， 部分反射器小面宽度对于高反射器面宽度为n：1，其中n> 1。 广域半导体激光器件是一种扩展的激光振荡器波导，其通过传统的直波导配置提供更好的光束亮度和光束参数乘积。
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公开(公告)号：US20160181764A1
公开(公告)日：2016-06-23
申请号：US14984602
申请日：2015-12-30
Applicant: NLIGHT PHOTONICS CORPORATION
Inventor： Manoj Kanskar , Raymond Kirk Price , Jay Small , Marty Hemenway , Zhigang Chen
CPC classification number: H01S5/4012 , G02B5/09 , G02B5/10 , G02B6/4204 , G02B6/4296 , G02B19/0028 , G02B19/0057 , G02B27/30 , H01S3/08059 , H01S5/02248 , H01S5/02284 , H01S5/4043 , H01S5/4062
Abstract: An apparatus includes at least one multijunction diode laser situated to emit a plurality of beams along respective mutually parallel propagation axes, each beam having an associated mutually parallel slow axes and associated collinear fast axes, a fast axis collimator situated to receive and collimate the plurality of beams along the corresponding fast axes so as to produce corresponding fast axis collimated beams that propagate along associated non-parallel axes, and a reflector situated to receive the plurality of fast axis collimated beams and to reflect the beams so that the reflected fast axis collimated beams propagate along substantially parallel axes.
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公开(公告)号：US20160172823A1
公开(公告)日：2016-06-16
申请号：US14938199
申请日：2015-11-11
Applicant: nLIGHT Photonics Corporation
Inventor： David Martin Hemenway , Manoj Kanskar
CPC classification number: H01S5/1014 , H01S5/005 , H01S5/0071 , H01S5/02284 , H01S5/026 , H01S5/1003 , H01S5/1203 , H01S5/141 , H01S5/146 , H01S5/16 , H01S5/187 , H01S5/2036 , H01S5/4012 , H01S5/4031 , H01S2301/166 , H01S2301/18
Abstract: A high brightness diode laser package includes a plurality of flared laser oscillator waveguides arranged on a stepped surface to emit respective laser beams in one or more emission directions, a plurality of optical components situated to receive the laser beams from the plurality of flared laser oscillator waveguides and to provide the beams in a closely packed relationship, and an optical fiber optically coupled to the closely packed beams for coupling the laser beams out of the diode laser package.
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Patent Agency Ranking
公开(公告)号：US20160104997A1
公开(公告)日：2016-04-14
申请号：US14879515
申请日：2015-10-09
Applicant: nLIGHT Photonics Corporation
Inventor： Manoj Kanskar
CPC classification number: H01S5/1014 , H01S5/0287 , H01S5/12 , H01S5/1203 , H01S5/2018 , H01S5/2036 , H01S5/22 , H01S2301/18
Abstract: A broad area semiconductor diode laser device includes a multiple flared oscillator waveguide including a plurality of component flared oscillator waveguides, each component flared oscillator waveguide including a multimode high reflector facet, a partial reflector facet spaced apart from the high reflector facet, and a flared current injection region extending and widening between the multimode high reflector facet and the partial reflector facet, wherein the ratio of a partial reflector facet width to a high reflector facet width is n:1, where n>1, and wherein the component flared oscillator waveguides of the multiple flared oscillator waveguide are arranged in a row such that portions of the flared current injection regions of adjacently situated component flared oscillator waveguides overlap each other or are in proximity to each other on the order of the wavelength of light emitted by the component flared oscillator waveguides.
Abstract translation: 广域半导体二极管激光器件包括多个扩张的振荡器波导，其包括多个分量扩张振荡器波导，每个分量展开的振荡器波导包括多模高反射器面，与高反射面相隔开的局部反射面，以及喇叭形电流 注射区域在多模高反射器面和部分反射面之间延伸和加宽，其中部分反射器面宽度与高反射器面宽度的比率为n：1，其中n> 1，并且其中，组件扩张的振荡器波导 多个扩张的振荡波导被布置成一排，使得相邻定位的组件扩张的振荡器波导的扩张电流注入区域的一部分彼此重叠或者彼此接近，由组件扩张振荡器发射的光的波长 波导。
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公开(公告)号：US09270085B1
公开(公告)日：2016-02-23
申请号：US14547116
申请日：2014-11-18
Applicant: nLIGHT Photonics Corporation
Inventor： Manoj Kanskar
CPC classification number: H01S5/34 , H01S5/12 , H01S5/1203 , H01S5/1215 , H01S5/125 , H01S5/14 , H01S5/141 , H01S5/4043 , H01S5/4062 , H01S5/4087
Abstract: A multi-wavelength semiconductor diode laser device includes a semiconductor diode gain medium including one or more quantum well structures, each of the quantum well structures having an associated gain peak, the semiconductor gain medium further including a back facet configured for high reflection of laser light therein and a front facet configured for coupling a laser beam therefrom, one or more collimation optics configured to receive the laser beam, and an external volume Bragg grating configured to reflect a portion of the laser beam and narrow the wavelength of at least a portion of the light generated by the semiconductor gain medium to a selected wavelength corresponding to at least one of the gain peaks, wherein an output beam is coupled out of the external volume Bragg grating, the output beam having a plurality of output wavelengths.
Abstract translation: 多波长半导体二极管激光器件包括包括一个或多个量子阱结构的半导体二极管增益介质，每个量子阱结构具有相关联的增益峰值，半导体增益介质还包括被配置用于高反射激光 其中配置有用于从其中耦合激光束的前刻面，被配置为接收激光束的一个或多个准直光学元件，以及被配置为反射激光束的一部分并使波长的至少一部分的波长变窄的外部体积布拉格光栅 由半导体增益介质产生的光对应于至少一个增益峰值的选定波长，其中输出光束耦合出外部体积布拉格光栅，输出光束具有多个输出波长。
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公开(公告)号：US09166369B2
公开(公告)日：2015-10-20
申请号：US14011661
申请日：2013-08-27
Applicant: nLIGHT Photonics Corporation
Inventor： Manoj Kanskar
CPC classification number: H01S5/2036 , H01S5/0287 , H01S5/0651 , H01S5/1003 , H01S5/1014 , H01S5/1203 , H01S5/2018 , H01S5/22 , H01S2301/16 , H01S2301/18
Abstract: A broad area semiconductor diode laser device includes a multimode high reflector facet, a partial reflector facet spaced from said multimode high reflector facet, and a flared current injection region extending and widening between the multimode high reflector facet and the partial reflector facet, wherein the ratio of a partial reflector facet width to a high reflector facet width is n:1, where n>1. The broad area semiconductor laser device is a flared laser oscillator waveguide delivering improved beam brightness and beam parameter product over conventional straight waveguide configurations.
Abstract translation: 广域半导体二极管激光器件包括多模高反射器面，与所述多模高反射面相隔开的局部反射器面，以及在多模高反射面与部分反射面之间延伸和加宽的扩张电流注入区，其中， 部分反射器小面宽度对于高反射器面宽度为n：1，其中n> 1。 广域半导体激光器件是一种扩展的激光振荡器波导，其通过传统的直波导配置提供更好的光束亮度和光束参数乘积。
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公开(公告)号：US20180083418A1
公开(公告)日：2018-03-22
申请号：US14873049
申请日：2015-10-01
Applicant: nLIGHT Photonics Corporation
Inventor： Manoj Kanskar , Walter R. Sanders
CPC classification number: H01S5/02423 , F02C3/22 , F05D2220/32 , F25B9/14 , F25B19/005 , F25B23/006 , F25B2400/12 , F25D19/006 , H01M8/04201 , H01M8/04208 , H01S5/0207 , H01S5/024 , H01S5/042 , H01S5/40
Abstract: A laser system includes a plurality of diode lasers, a cryogenic cooling system circulating a cryogenic coolant and coupled to the plurality diode lasers to cool the plurality of diode lasers with the cryogenic coolant, and a fuel cell coupled to the plurality of diode lasers to power the plurality of diode lasers and situated to receive the cryogenic coolant from the cryogenic cooling system as fuel for the fuel cell. A method of operating a high power laser system includes cooling a plurality of diode lasers with a cryogenic cooling system circulating a cryogenic coolant, fueling a fuel cell with a portion of the cryogenic coolant circulating in the cryogenic cooling system, and powering the plurality of diode lasers with power generated by the fuel cell.
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公开(公告)号：US09553424B2
公开(公告)日：2017-01-24
申请号：US14855710
申请日：2015-09-16
Applicant: nLIGHT Photonics Corporation
Inventor： Manoj Kanskar
CPC classification number: H01S5/2036 , H01S5/0287 , H01S5/0651 , H01S5/1003 , H01S5/1014 , H01S5/1203 , H01S5/2018 , H01S5/22 , H01S2301/16 , H01S2301/18
Abstract: A broad area semiconductor diode laser device includes a multimode high reflector facet, a partial reflector facet spaced from said multimode high reflector facet, and a flared current injection region extending and widening between the multimode high reflector facet and the partial reflector facet, wherein the ratio of a partial reflector facet width to a high reflector facet width is n:1, where n>1. The broad area semiconductor laser device is a flared laser oscillator waveguide delivering improved beam brightness and beam parameter product over conventional straight waveguide configurations.
Abstract translation: 广域半导体二极管激光器件包括多模高反射器面，与所述多模高反射面相隔开的局部反射器面，以及在多模高反射面与部分反射面之间延伸和加宽的扩张电流注入区，其中， 部分反射器小面宽度对于高反射器面宽度为n：1，其中n> 1。 广域半导体激光器件是一种扩展的激光振荡器波导，其通过传统的直波导配置提供更好的光束亮度和光束参数乘积。
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