Multi-Mode Memory Module with Data Handlers
    1.
    发明公开

    公开(公告)号:US20240221852A1

    公开(公告)日:2024-07-04

    申请号:US18402549

    申请日:2024-01-02

    申请人: Netlist, Inc.

    IPC分类号: G11C29/10 G11C29/12 G11C5/04

    CPC分类号: G11C29/10 G11C29/12 G11C5/04

    摘要: A memory module comprises memory devices, a data module and a control module. The memory module is operable in a first mode in which at least some of the memory devices are accessed by a system memory controller in a computer system for memory read and/or write operations at a memory access speed, the control module is configured to register address and control signals associated with the memory read and/or write operations, and the data module is configured to propagate data signals between the at least some of the memory devices and the memory controller. The memory module is further operable in a second mode in which the memory devices are not accessed by the system memory controller for memory read or write operations, and the data module is configured to communicate data signals with at least some of the memory devices at the memory access speed.

    Computer Memory Expansion Device and Method of Operation

    公开(公告)号:US20210374080A1

    公开(公告)日:2021-12-02

    申请号:US17336262

    申请日:2021-06-01

    申请人: Netlist Inc.

    摘要: A memory expansion device operable with a host computer system (host) comprises a non-volatile memory (NVM) subsystem, cache memory, and control logic configurable to receive a submission from the host including a read command and specifying a payload in the NVM subsystem and demand data in the payload. The control logic is configured to request ownership of a set of cache lines corresponding to the payload, to indicate completion of the submission after acquiring ownership of the cache lines, and to load the payload to the cache memory. The set of cache lines correspond to a set of cache lines in a coherent destination memory space accessible by the host. The control logic is further configured to, after indicating completion of the submission and in response to a request from the host to read demand data in the payload, return the demand data after determining that the demand data is in the cache memory.

    FLASH-DRAM HYBRID MEMORY MODULE
    5.
    发明申请

    公开(公告)号:US20210279194A1

    公开(公告)日:2021-09-09

    申请号:US17328019

    申请日:2021-05-24

    申请人: Netlist, Inc.

    摘要: In certain embodiments, a memory module includes a printed circuit board (PCB) having an interface that couples it to a host system for provision of power, data, address and control signals. First, second, and third buck converters receive a pre-regulated input voltage and produce first, second and third regulated voltages. A converter circuit reduces the pre-regulated input voltage to provide a fourth regulated voltage. Synchronous dynamic random access memory (SDRAM) devices are coupled to one or more regulated voltages of the first, second, third and fourth regulated voltages, and a voltage monitor circuit monitors an input voltage and produces a signal in response to the input voltage having a voltage amplitude that is greater than a threshold voltage.

    MEMORY MODULE WITH DISTRIBUTED DATA BUFFERS

    公开(公告)号:US20210271593A1

    公开(公告)日:2021-09-02

    申请号:US17202021

    申请日:2021-03-15

    申请人: Netlist, Inc.

    摘要: A memory module comprises dynamic random access memory (DRAM) devices arranged in ranks, and a module controller configurable to receive address and control signals for a memory operation, and to output first module control signals to the DRAM devices, causing a selected rank to output or receive N-bit-wide data. The module controller is further configurable to output second module control signals to a plurality of data buffers coupled to the DRAM devices via module data lines. Each respective data buffer includes a n-bit-wide (n

    MEMORY MODULE WITH LOCAL SYNCHRONIZATION AND METHOD OF OPERATION

    公开(公告)号:US20210240620A1

    公开(公告)日:2021-08-05

    申请号:US17141978

    申请日:2021-01-05

    申请人: NETLIST, INC.

    摘要: A memory module is operable in a memory system with a memory controller. The memory module comprises a module control device to receive command signals and a system clock from the memory controller and to output a module clock, module C/A signals and data buffer control signals. The module C/A signals are provided to memory devices organized in one or more ranks, while the data buffer control signals, together with the module clock, are provided to a plurality of buffer circuits corresponding to respective groups of memory devices and are used to control data paths in the buffer circuits. The plurality of buffer circuits include clock regeneration circuits to regenerate clock signals with programmable delays from the module clock. The regenerated clock signals are provided to respective groups of memory devices so as to locally sync the buffer circuits with respective groups of memory devices.

    MEMORY MODULE WITH TIMING-CONTROLLED DATA BUFFERING

    公开(公告)号:US20210149829A1

    公开(公告)日:2021-05-20

    申请号:US17114478

    申请日:2020-12-07

    申请人: Netlist, Inc.

    摘要: A memory module is operable in a memory system with a memory controller. The memory module comprises memory devices, a module control circuit, and a plurality of buffer circuits coupled between respective sets of data signal lines in a data bus and respective sets of the memory devices. Each respective buffer circuit is mounted on the module board and coupled between a respective set of data signal lines and a respective set of memory devices. Each respective buffer circuit is configured to receive the module control signals and the module clock signal, and to buffer a respective set of data signals in response to the module control signals and the module clock signal. Each respective buffer circuit includes a delay circuit configured to delay the respective set of data signals by an amount determined based on at least one of the module control signals.

    Memory module with buffered memory packages

    公开(公告)号:US10902886B2

    公开(公告)日:2021-01-26

    申请号:US16412308

    申请日:2019-05-14

    申请人: NETLIST, INC.

    发明人: Hyun Lee

    IPC分类号: G11C5/06 G11C7/10 G11C7/12

    摘要: A memory module includes a plurality of DRAM packages mounted on a printed circuit board. Each DRAM package includes a control die, stacked array dies, and first and second die interconnects coupling the stacked array dies to the control die. The control die includes data signal conduits coupled to the first die interconnects and control signal conduits coupled to the second die interconnects. The control die is configured to receive control signals, and to control the data signal conduits in accordance with the control signals. Each of the DRAM packages is configurable to communicate a respective set of bits of a data signal between a selected die among the stacked array dies and the data conduits in response to the control signals.

    Non-volatile memory storage for multi-channel memory system

    公开(公告)号:US10719246B2

    公开(公告)日:2020-07-21

    申请号:US15976321

    申请日:2018-05-10

    申请人: Netlist, Inc.

    发明人: Hyun Lee

    摘要: A memory system that has a multi-channel volatile memory subsystem is coupled to a non-volatile memory subsystem to provide independent, configurable backup of data. The volatile memory subsystem has one or more main memory modules that use a form of volatile memory such as DRAM memory, for which the NV subsystem provides selective persistent backup. The main memory modules are dual in-line memory modules or DIMMs using DDR SDRAM memory devices. The non-volatile memory subsystem (NV backup) includes an NV controller and non-volatile memory NVM. The NV backup can also include a memory cache to aid with handling and storage of data. In certain embodiments, the NV controller and the non-volatile memory are coupled to the one or more DIMM channels of the main memory via associated signal lines. Such signal lines can be, for example, traces on a motherboard, and may include one or more signal buses for conveying data, address, and/or control signals. The NV controller and the non-volatile memory can be mounted on the motherboard.