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    Method of forming a bipolar transistor with a vertical collector contact
    2.
    发明授权
    Method of forming a bipolar transistor with a vertical collector contact 有权

    公开(公告)号：US11575020B2

    公开(公告)日：2023-02-07

    申请号：US16908117

    申请日：2020-06-22

    申请人： Teledyne Scientific & Imaging, LLC

    发明人： Miguel Urteaga ,  Andy Carter

    IPC分类号： H01L29/417 ,  H01L29/66 ,  H01L21/321 ,  H01L21/8252

    摘要： A method of forming a bipolar transistor with a vertical collector contact requires providing a transistor comprising a plurality of epitaxial semiconductor layers on a first substrate, and providing a host substrate. A metal collector contact is patterned on the top surface of the host substrate, and the plurality of epitaxial semiconductor layers is transferred from the first substrate onto the metal collector contact on the host substrate. The first substrate is suitably the growth substrate for the plurality of epitaxial semiconductor layers. The host substrate preferably has a higher thermal conductivity than does the first substrate, which improves the heat dissipation characteristics of the transistor and allows it to operate at higher power densities. A plurality of transistors may be transferred onto a common host substrate to form a multi-finger transistor.

    METHOD FOR NEURAL SIGNALS STABILIZATION
    3.
    发明申请
    METHOD FOR NEURAL SIGNALS STABILIZATION 有权

    公开(公告)号：US20220383107A1

    公开(公告)日：2022-12-01

    申请号：US17663031

    申请日：2022-05-12

    申请人： TELEDYNE SCIENTIFIC & IMAGING, LLC

    发明人： Stephen B. Simons ,  Mark Alan Peot ,  Thomas Stephens ,  Jon Cafaro ,  Ryan MacRae

    IPC分类号： G06N3/08 ,  G06F3/01

    摘要： A method for stabilizing disrupted neural signals received by a brain-computer interface (BCI), where a translation model is trained on a clean and disrupted dataset and is used to translate a disrupted signal to a clean signal. The clean dataset is based on the data that is received the same day the BCI is calibrated and the disrupted dataset is based on data received the same day that the model is trained. Based on the variation in daily signal disruption, the training model is retrained each day and a new translation model is applied to a disrupted dataset.

    OHMIC CONTACT FOR MULTIPLE CHANNEL FET
    5.
    发明申请
    OHMIC CONTACT FOR MULTIPLE CHANNEL FET 有权

    公开(公告)号：US20210359097A1

    公开(公告)日：2021-11-18

    申请号：US16877378

    申请日：2020-05-18

    申请人： Teledyne Scientific & Imaging, LLC

    发明人： Keisuke Shinohara ,  Casey King ,  Eric Regan

    IPC分类号： H01L29/45 ,  H01L29/20 ,  H01L29/66 ,  H01L29/778

    摘要： An ohmic contact for a multiple channel FET comprises a plurality of slit-shaped recesses in a wafer on which a multiple channel FET resides, with each recess having a depth at least equal to the depth of the lowermost channel layer. Ohmic metals in and on the sidewalls of each recess provide ohmic contact to each of the multiple channel layers. An ohmic metal-filled linear connecting recess contiguous with the outside edge of each recess may be provided, as well as an ohmic metal contact layer on the top surface of the wafer over and in contact with the ohmic metals in each of the recesses. The present ohmic contact typically serves as a source and/or drain contact for the multiple channel FET. Also described is the use of a regrown material to make ohmic contact with multiple channels, with the regrown material preferably having a corrugated structure.