摘要:
To provide a simple highly-pure Xe retrieval method and device with high retrieval efficiency by functionally removing such elements as water, CO2 and FCs from waste gases from semiconductor production processes, such as the plasma etching, that contain low-concentration Xe. For samples containing xenon and fluorocarbon, this invention is characterized by having at least first adsorption means (A1) filled with synthetic zeolite with pore size of 4A or smaller and aluminum oxide, arranged serially, gas separation means (A2) composed of silicone or polyethylene hollow fiber gas separation membrane modules 4, second adsorption means (A3) filled with either activated carbon, synthetic zeolite with pore size of 5A or larger, molecular sieving carbon with pore size of 5A or larger, or a combination of these, and reaction means (A4) filled with calcium compounds as reactant.
摘要:
A process and apparatus for the on-site delivery of a gas having improved purity to from a container filled with liquid under pressure and integrated with a purifier. In the process a portion of the liquid is converted to vapor by reducing the pressure in the container and expanding the thus formed vapor through a pressure reducer generating refrigeration. The cooled vapor is warmed against incoming vapor prior to exit from the purifier.
摘要:
Methods of collecting, thawing, and extending the useful polarized life of frozen polarized gases include heating a portion of the flow path and/or directly liquefying the frozen gas during thawing. A polarized noble gas product with an extended polarized life product is also included. Associated apparatus such as an accumulator and heating jacket for collecting, storing, and transporting polarized noble gases include a secondary flow channel which provides heat to a portion of the collection path during accumulation and during thawing.
摘要:
A maskless, extreme ultraviolet (EUV) lithography system uses microlens arrays to focus EUV radiation (at an operating wavelength of 11.3 nm) onto diffraction-limited (58-nm FWHM) focused spots on a wafer printing surface. The focus spots are intensity-modulated by means of microshutter modulators and are raster-scanned across a wafer surface to create a digitally synthesized exposure image. The system uses a two-stage microlens configuration to achieve both a high fill factor and acceptable transmission efficiency. EUV illumination is supplied by a 6 kHz xenon plasma source, and the illumination optics comprise an aspheric condenser mirror, a spherical collimating mirror, and two sets of flat, terraced fold mirrors that partition the illumination into separate illumination fields covering individual microlens arrays. (The system has no projection optics, because the image modulator elements are integrated with the microlens arrays.) The printing throughput is estimated to be 62 (300-mm) wafers per hour (assuming a resist exposure threshold of 20 mJ/cm2), and print resolution is estimated at 70 nanometers for mixed positive- and negative-tone patterns (at k1=0.6).
摘要:
Process and apparatus for the purification of a cryogenic fluid in liquid, diphase, gaseous or supercritical state, having a boiling point Pe, with at least one of its impurities having a boiling point Pe', with Pe'>Pe. The process includes at least one step selected from the group comprised by:a filtration step of at least one impurity in solid state,and an adsorption step of at least one impurity in liquid or gaseous state;and in which there is recovered at least one portion of the cryogenic fluid at least partially purified.
摘要:
Xenon is separated from a mixture of xenon and krypton by extractive distillation using carbon tetrafluoride as the partitioning agent. Krypton is flushed out of the distillation column with CF.sub.4 in the gaseous overhead stream while purified xenon is recovered from the liquid bottoms. The distillation is conducted at about atmospheric pressure or at subatmospheric pressure.
摘要:
The method of treatment of a mixture of air and at least partially radioactive gases such as xenon and krypton in particular, especially gaseous effluents derived from the reprocessing of irradiated nuclear fuels, comprises a stage of concentration of the rare gases in solution in liquid oxygen by cryogenic distillation of the light gases and especially nitrogen from the liquefied mixture.
摘要:
This invention relates to apparatus and methods for the removal and safe containment of radioactive krypton and xenon present in the air leakage stream of a nuclear plant utilizing a boiling water reactor. The invention utilizes cryogenic techniques to separate the xenon and krypton isotopes from the air and then stores the same until they are no longer a safety hazard.
摘要:
A krypton-xenon concentrate is first divided into krypton and xenon fractions in a preliminary rectifying column. Semi-volatile impurities are removed from each fraction, and production krypton and xenon are obtained from the refined fractions in krypton and xenon production columns. A recovered krypton flow is produced in a krypton recovery rectifying column. Reflux is formed in condensers-evaporators of rectification columns of the device in such a way that the formation of a solid phase is excluded. The operation of the rectification columns is initiated by supplying krypton to a contacting space.
摘要:
Apparatus for producing liquid or solid xenon comprises a duct 12 having an inlet 14 for receiving gaseous xenon and an outlet 16 for outputting gaseous xenon at a reduced temperature to a nozzle located in a vacuum chamber 60. A housing 18 extends about the duct and contains a halocarbon coolant in thermal contact with the duct, and a second duct 24 in thermal contact with the halocarbon coolant for conveying a flow of liquid nitrogen through the housing 18 to control the temperature of the halocarbon. In view of the difference in the pressure of the xenon gas output from the duct and the pressure in the chamber, the thus-cooled gas is caused to liquefy or solidify in the vicinity of the nozzle.