公开(公告)号：US07755042B1

公开(公告)日：2010-07-13

申请号：US12124407

申请日：2008-05-21

Applicant: Gabor D. Toth ,  Rudy F. Garcia ,  Chris Huang ,  Niles Kenneth MacDonald ,  Mehran Nasser-Ghodsi ,  Garrett Pickard ,  Khashayar Shadman ,  Wo-Tak Wu ,  Ming Yu

Inventor： Gabor D. Toth ,  Rudy F. Garcia ,  Chris Huang ,  Niles Kenneth MacDonald ,  Mehran Nasser-Ghodsi ,  Garrett Pickard ,  Khashayar Shadman ,  Wo-Tak Wu ,  Ming Yu

IPC: H01J37/05

CPC classification number: H01J37/05 ,  G01N23/2276 ,  H01J37/14 ,  H01J37/28 ,  H01J2237/2511 ,  H01J2237/2801

Abstract: A scanning electron beam apparatus with an Auger spectrometer. The apparatus includes at least an electron column for generating a primary electron beam, a magnetic objective lens configured to focus the primary electron beam onto a surface of a target substrate, and a spectrometer configured to detect Auger electrons emitted from the surface of the target substrate. The magnetic objective lens applies a magnetic field strength greater than 10 Gauss and less than 50 Gauss at the surface of the target substrate. Other embodiments, aspects and features are also disclosed.

Abstract translation: 具有俄歇光谱仪的扫描电子束装置。 该装置至少包括用于产生一次电子束的电子柱，被配置为将一次电子束聚焦到目标衬底的表面上的磁性物镜，以及配置成检测从靶衬底的表面发射的俄歇电子的光谱仪 。 磁性物镜在目标衬底的表面施加大于10高斯的磁场强度和小于50高斯。 还公开了其它实施例，方面和特征。

公开(公告)号：US20070158303A1

公开(公告)日：2007-07-12

申请号：US11622625

申请日：2007-01-12

Applicant: MEHRAN NASSER-GHODSI ,  Garrett Pickard ,  Rudy Garcia ,  Ming Yu ,  Kenneth Krzeczowski ,  Matthew Lent ,  Sergey Lopatin ,  Chris Huang ,  Niles MacDonald

Inventor： MEHRAN NASSER-GHODSI ,  Garrett Pickard ,  Rudy Garcia ,  Ming Yu ,  Kenneth Krzeczowski ,  Matthew Lent ,  Sergey Lopatin ,  Chris Huang ,  Niles MacDonald

IPC: C23F1/00 ,  A61N5/00 ,  B44C1/22 ,  G21G5/00

CPC classification number: C23F4/00 ,  G02B5/1857 ,  H01J2237/31744 ,  H01L21/3065 ,  H01L21/32136 ,  H01L29/66795

Abstract: Structural modification using electron beam activated chemical etch (EBACE) is disclosed. A target or portion thereof may be exposed to a gas composition of a type that etches the target when the gas composition and/or target are exposed to an electron beam. By directing an electron beam toward the target in the vicinity of the gas composition, an interaction between the electron beam and the gas composition etches a portion of the target exposed to both the gas composition and the electron beam. Structural modifications of the target may be conducted by means of etching due to interaction between the electron beam and gas composition.

Abstract translation: 公开了使用电子束活化化学蚀刻（EBACE）的结构修饰。 当气体组合物和/或靶暴露于电子束时，靶或其部分可暴露于蚀刻靶的类型的气体组合物。 通过在气体组合物附近引导电子束朝向靶，电子束和气体组成之间的相互作用会蚀刻暴露于气体组成和电子束两者的靶的一部分。 由于电子束和气体组成之间的相互作用，靶的结构修饰可以通过蚀刻进行。

公开(公告)号：US08890066B1

公开(公告)日：2014-11-18

申请号：US11265811

申请日：2005-11-03

Applicant: Yehiel Gotkis ,  Garrett Pickard ,  Stanislaw Marek Borowicz ,  Tzu-Chin Chuang ,  Mehran Nasser-Ghodsi

Inventor： Yehiel Gotkis ,  Garrett Pickard ,  Stanislaw Marek Borowicz ,  Tzu-Chin Chuang ,  Mehran Nasser-Ghodsi

IPC: G21K5/04

CPC classification number: H01J37/244 ,  H01J37/28 ,  H01J2237/028

Abstract: One embodiment relates to an electron beam apparatus. The apparatus includes a source for generating an incident electron beam, an electron lens for focusing the incident electron beam so that the beam impinges upon a substrate surface and interacts with surface material so as to cause secondary emission of scattered electrons, and a detector configured to detect the scattered electrons. The apparatus further includes an advantageous device configured to trap the scattered electrons which are emitted at sharp angles relative to the sample surface plane of the substrate surface. Other embodiments are also disclosed.

Abstract translation: 一个实施例涉及电子束装置。 该装置包括用于产生入射电子束的源，用于聚焦入射电子束的电子透镜，使得光束撞击在衬底表面上并与表面材料相互作用以引起散射电子的二次发射;以及检测器，被配置为 检测散射的电子。 该装置还包括有利的装置，其被配置为捕获相对于衬底表面的样品表面平面以锐角发射的散射电子。 还公开了其他实施例。

公开(公告)号：US08052885B2

公开(公告)日：2011-11-08

申请号：US11622625

申请日：2007-01-12

Applicant: Mehran Naser-Ghodsi ,  Garrett Pickard ,  Rudy F. Garcia ,  Ming Lun Yu ,  Kenneth Krzeczowski ,  Matthew Lent ,  Sergey Lopatin ,  Chris Huang ,  Niles K. MacDonald

Inventor： Mehran Naser-Ghodsi ,  Garrett Pickard ,  Rudy F. Garcia ,  Ming Lun Yu ,  Kenneth Krzeczowski ,  Matthew Lent ,  Sergey Lopatin ,  Chris Huang ,  Niles K. MacDonald

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/302 ,  H01L21/461

CPC classification number: C23F4/00 ,  G02B5/1857 ,  H01J2237/31744 ,  H01L21/3065 ,  H01L21/32136 ,  H01L29/66795

Abstract: Structural modification using electron beam activated chemical etch (EBACE) is disclosed. A target or portion thereof may be exposed to a gas composition of a type that etches the target when the gas composition and/or target are exposed to an electron beam. By directing an electron beam toward the target in the vicinity of the gas composition, an interaction between the electron beam and the gas composition etches a portion of the target exposed to both the gas composition and the electron beam. Structural modifications of the target may be conducted by means of etching due to interaction between the electron beam and gas composition.

Abstract translation: 公开了使用电子束活化化学蚀刻（EBACE）的结构修饰。 当气体组合物和/或靶暴露于电子束时，靶或其部分可暴露于蚀刻靶的类型的气体组合物。 通过在气体组合物附近引导电子束朝向靶，电子束和气体组成之间的相互作用会蚀刻暴露于气体组成和电子束两者的靶的一部分。 由于电子束和气体组成之间的相互作用，靶的结构修饰可以通过蚀刻进行。

公开(公告)号：US20070158304A1

公开(公告)日：2007-07-12

申请号：US11622605

申请日：2007-01-12

Applicant: Mehran Nasser-Ghodsi ,  Garrett Pickard ,  Rudy Garcia ,  Tzu-Chin Chuang ,  Ming Yu ,  Kenneth Krzeczowski ,  Matthew Lent ,  Sergey Lopatin ,  Chris Huang ,  Niles MacDonald

Inventor： Mehran Nasser-Ghodsi ,  Garrett Pickard ,  Rudy Garcia ,  Tzu-Chin Chuang ,  Ming Yu ,  Kenneth Krzeczowski ,  Matthew Lent ,  Sergey Lopatin ,  Chris Huang ,  Niles MacDonald

IPC: C23F1/00 ,  A61N5/00 ,  G21G5/00

CPC classification number: C23F4/00 ,  H01J2237/31744 ,  H01L21/3065 ,  H01L21/32136

Abstract: Etch selectivity enhancement during electron beam activated chemical etch (EBACE) is disclosed. A target or portion thereof may be exposed to a gas composition of a type that etches the target when the gas composition and/or target are exposed to an electron beam. By directing an electron beam toward the target in the vicinity of the gas composition, an interaction between the electron beam and the gas composition etches a portion of the target exposed to both the gas composition and the electron beam. Selectivity of etching of the target due to interaction between the electron beam and gas composition may be enhanced in a number of ways.

Abstract translation: 公开了电子束激活化学蚀刻（EBACE）期间的蚀刻选择性增强。 当气体组合物和/或靶暴露于电子束时，靶或其部分可暴露于蚀刻靶的类型的气体组合物。 通过在气体组合物附近引导电子束朝向靶，电子束和气体组成之间的相互作用会蚀刻暴露于气体组成和电子束两者的靶的一部分。 可以以多种方式增强由于电子束和气体组成之间的相互作用而导致的靶的蚀刻选择性。

公开(公告)号：US07879730B2

公开(公告)日：2011-02-01

申请号：US11622605

申请日：2007-01-12

Applicant: Mehran Naser-Ghodsi ,  Garrett Pickard ,  Rudy F. Garcia ,  Tzu-Chin Chuang ,  Ming Lun Yu ,  Kenneth Krzeczowski ,  Matthew Lent ,  Sergey Lopatin ,  Chris Huang ,  Niles K. MacDonald

Inventor： Mehran Naser-Ghodsi ,  Garrett Pickard ,  Rudy F. Garcia ,  Tzu-Chin Chuang ,  Ming Lun Yu ,  Kenneth Krzeczowski ,  Matthew Lent ,  Sergey Lopatin ,  Chris Huang ,  Niles K. MacDonald

IPC: H01L21/302 ,  H01L21/461

CPC classification number: C23F4/00 ,  H01J2237/31744 ,  H01L21/3065 ,  H01L21/32136

Abstract: Etch selectivity enhancement during electron beam activated chemical etch (EBACE) is disclosed. A target or portion thereof may be exposed to a gas composition of a type that etches the target when the gas composition and/or target are exposed to an electron beam. By directing an electron beam toward the target in the vicinity of the gas composition, an interaction between the electron beam and the gas composition etches a portion of the target exposed to both the gas composition and the electron beam. Selectivity of etching of the target due to interaction between the electron beam and gas composition may be enhanced in a number of ways.

Abstract translation: 公开了电子束激活化学蚀刻（EBACE）期间的蚀刻选择性增强。 当气体组合物和/或靶暴露于电子束时，靶或其部分可暴露于蚀刻靶的类型的气体组合物。 通过在气体组合物附近引导电子束朝向靶，电子束和气体组成之间的相互作用会蚀刻暴露于气体组成和电子束两者的靶的一部分。 可以以多种方式增强由于电子束和气体组成之间的相互作用而导致的靶的蚀刻选择性。