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11 条记录 (耗时 0.02 秒)

    System and method for fabricating efficient semiconductor lasers via use of precursors having a direct bond between a group III atom and a nitrogen atom
    3.
    发明授权
    System and method for fabricating efficient semiconductor lasers via use of precursors having a direct bond between a group III atom and a nitrogen atom 失效
    通过使用具有III族原子和氮原子之间的直接键的前体制备高效半导体激光器的系统和方法

    公开(公告)号：US06934312B2

    公开(公告)日：2005-08-23

    申请号：US10261754

    申请日：2002-09-30

    申请人： Tetsuya Takeuchi ,  Michael Tan ,  Ying-Ian Chang

    发明人： Tetsuya Takeuchi ,  Michael Tan ,  Ying-Ian Chang

    IPC分类号： C23C16/34 ,  H01L21/205 ,  H01S5/183 ,  H01S5/323 ,  H01S5/00

    CPC分类号： H01S5/32341 ,  H01L21/02395 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/0262 ,  H01S2304/025

    摘要： A system for fabricating a light emitting device is disclosed. The system contains a growth chamber and at least one nitrogen precursor that is introduced to the growth chamber. The at least one nitrogen precursor has a direct bond between at least one group III atom and at least one nitrogen atom. In addition, the nitrogen precursor is used to fabricate a layer constituting part of an active region of the light emitting device containing indium, gallium, arsenic, and nitrogen, wherein the active region produces light having a wavelength in the range of approximately 1.2 to 1.6 micrometers. A method for fabricating a semiconductor structure is also disclosed. The method comprises providing a substrate and growing over the substrate a layer comprising indium, gallium, arsenic, and nitrogen using at least one nitrogen precursor having a direct bond between at least one group III atom and at least one nitrogen atom.

    摘要翻译： 公开了一种用于制造发光器件的系统。 该系统包含生长室和至少一个被引入生长室的氮前体。 至少一种氮前体在至少一个III族原子和至少一个氮原子之间具有直接键合。 此外，氮前体用于制造构成包含铟，镓，砷和氮的发光器件的有源区的一部分的层，其中有源区产生波长在约1.2至1.6范围内的光 微米。 还公开了一种用于制造半导体结构的方法。 该方法包括提供衬底并使用至少一种具有至少一个III族原子和至少一个氮原子之间的直接键的氮前驱体在衬底上生长包含铟，镓，砷和氮的层。

    III-nitride optoelectronic device
    5.
    发明授权
    III-nitride optoelectronic device 失效
    III族氮化物光电器件

    公开(公告)号：US06605485B2

    公开(公告)日：2003-08-12

    申请号：US10147017

    申请日：2002-05-16

    申请人： Manijeh Razeghi

    发明人： Manijeh Razeghi

    IPC分类号： H01L2100

    CPC分类号： B82Y20/00 ,  H01S5/0213 ,  H01S5/0422 ,  H01S5/3409 ,  H01S5/34333 ,  H01S2304/025 ,  H01S2304/04 ,  H01S2304/06

    摘要： A p-i-n structure for use in photo laser diodes is disclosed, being formed of an GaxIn1−xN/GaN alloy (X=0→1). In the method of the subject invention, buffer layers of GaN are grown on a substrate and then doped. The active, confinement and confinement layers of p-type material are next grown and doped, if desired. The structure is masked and etched as required to expose a surface which is annealed. A p-type surface contact is formed on this annealed surface so as to be of sufficiently low resistance as to provide good quality performance for use in a device.

    摘要翻译： 公开了用于光激光二极管的p-i-n结构，由GaxIn1-xN / GaN合金（X = 0→1）形成。 在本发明的方法中，在衬底上生长GaN的缓冲层，然后掺杂。 如果需要，接下来生长和掺杂p型材料的活性，限制和约束层。 根据需要对该结构进行掩模和蚀刻以暴露退火的表面。 在该退火表面上形成p型表面接触，以便具有足够低的电阻，以提供用于器件的良好质量性能。

    III-Nitride optoelectronic device
    7.
    发明申请
    III-Nitride optoelectronic device 失效
    III型氮化物光电器件

    公开(公告)号：US20020175324A1

    公开(公告)日：2002-11-28

    申请号：US10147017

    申请日：2002-05-16

    发明人： Manijeh Razeghi

    IPC分类号： H01L029/06

    CPC分类号： B82Y20/00 ,  H01S5/0213 ,  H01S5/0422 ,  H01S5/3409 ,  H01S5/34333 ,  H01S2304/025 ,  H01S2304/04 ,  H01S2304/06

    摘要： A p-i-n structure for use in photo laser diodes is disclosed, being formed of an GaxIn1-xN/GaN alloy (Xnull0null1). In the method of the subject invention, buffer layers of GaN are grown on a substrate and then doped. The active, confinement and confinement layers of p-type material are next grown and doped, if desired. The structure is masked and etched as required to expose a surface which is annealed. A p-type surface contact is formed on this annealed surface so as to be of sufficiently low resistance as to provide good quality performance for use in a device.

    摘要翻译： 公开了用于光激光二极管的p-i-n结构，由GaxIn1-xN / GaN合金（X = 0→1）形成。 在本发明的方法中，在衬底上生长GaN的缓冲层，然后掺杂。 如果需要，接下来生长和掺杂p型材料的活性，限制和约束层。 根据需要对该结构进行掩模和蚀刻以暴露退火的表面。 在该退火表面上形成p型表面接触，以便具有足够低的电阻，以提供用于器件的良好质量性能。

    Multi quantum well grinsch detector
    8.
    发明授权
    Multi quantum well grinsch detector 失效
    多量子阱麦克风检测器

    公开(公告)号：US06459096B1

    公开(公告)日：2002-10-01

    申请号：US09526134

    申请日：2000-03-15

    申请人： Manijeh Razeghi

    发明人： Manijeh Razeghi

    IPC分类号： H01L3300

    CPC分类号： B82Y20/00 ,  H01S5/0213 ,  H01S5/0422 ,  H01S5/3409 ,  H01S5/34333 ,  H01S2304/025 ,  H01S2304/04 ,  H01S2304/06

    摘要： A p-i-n structure for use in photo laser diodes is disclosed, being formed of an GaxIn1-xN/GaN alloy (X=0→1). In the method of the subject invention, buffer layers of GaN are grown on a substrate and then doped. The active, confinement and confinement layers of p-type material are next grown and doped, if desired. The structure is masked and etched as required to expose a surface which is annealed. A p-type surface contact is formed on this annealed surface so as to be of sufficiently low resistance as to provide good quality performance for use in a device.

    摘要翻译： 公开了用于光激光二极管的p-i-n结构，由GaxIn1-xN / GaN合金（X = 0→1）形成。 在本发明的方法中，在衬底上生长GaN的缓冲层，然后掺杂。 如果需要，接下来生长和掺杂p型材料的活性，限制和约束层。 根据需要对该结构进行掩模和蚀刻以暴露退火的表面。 在该退火表面上形成p型表面接触，以便具有足够低的电阻，以提供用于器件的良好质量性能。

    System and method for fabricating efficient semiconductor lasers via use of precursors having a direct bond between a group III atom and a nitrogen atom
    10.
    发明申请
    System and method for fabricating efficient semiconductor lasers via use of precursors having a direct bond between a group III atom and a nitrogen atom 失效
    通过使用具有III族原子和氮原子之间的直接键的前体制备高效半导体激光器的系统和方法

    公开(公告)号：US20040062283A1

    公开(公告)日：2004-04-01

    申请号：US10261754

    申请日：2002-09-30

    发明人： Tetsuya Takeuchi ,  Michael Tan ,  Ying-Ian Chang

    IPC分类号： H01S005/00

    CPC分类号： H01S5/32341 ,  H01L21/02395 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/0262 ,  H01S2304/025

    摘要： A system for fabricating a light emitting device is disclosed. The system contains a growth chamber and at least one nitrogen precursor that is introduced to the growth chamber. The at least one nitrogen precursor has a direct bond between at least one group III atom and at least one nitrogen atom. In addition, the nitrogen precursor is used to fabricate a layer constituting part of an active region of the light emitting device containing indium, gallium, arsenic, and nitrogen, wherein the active region produces light having a wavelength in the range of approximately 1.2 to 1.6 micrometers. A method for fabricating a semiconductor structure is also disclosed. The method comprises providing a substrate and growing over the substrate a layer comprising indium, gallium, arsenic, and nitrogen using at least one nitrogen precursor having a direct bond between at least one group III atom and at least one nitrogen atom.

    摘要翻译： 公开了一种用于制造发光器件的系统。 该系统包含生长室和至少一个被引入生长室的氮前体。 至少一种氮前体在至少一个III族原子和至少一个氮原子之间具有直接键合。 此外，氮前体用于制造构成包含铟，镓，砷和氮的发光器件的有源区的一部分的层，其中有源区产生波长在约1.2至1.6范围内的光 微米。 还公开了一种用于制造半导体结构的方法。 该方法包括提供衬底并使用至少一种具有至少一个III族原子和至少一个氮原子之间的直接键的氮前驱体在衬底上生长包含铟，镓，砷和氮的层。