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公开(公告)号：US11798722B2
公开(公告)日：2023-10-24
申请号：US17750574
申请日：2022-05-23
发明人： Guo Zhan Lum , Zhou Ye , Metin Sitti
CPC分类号： H01F13/00 , H01F10/08 , H10N35/00 , H10N35/01 , Y10T428/32
摘要： A method of fabricating a shape-changeable magnetic member comprising a plurality of segments with each segment being able to be magnetized with a desired magnitude and orientation of magnetization, to a method of producing a shape changeable magnetic member composed of a plurality of segments and to a shape changeable magnetic member.
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公开(公告)号：US20230354715A1
公开(公告)日：2023-11-02
申请号：US18215162
申请日：2023-06-27
发明人： Hui-Lin Wang , Tai-Cheng Hou , Wei-Xin Gao , Fu-Yu Tsai , Chin-Yang Hsieh , Chen-Yi Weng , Jing-Yin Jhang , Bin-Siang Tsai , Kun-Ju Li , Chih-Yueh Li , Chia-Lin Lu , Chun-Lung Chen , Kun-Yuan Liao , Yu-Tsung Lai , Wei-Hao Huang
IPC分类号： H10N50/10 , H01L21/768 , H01L21/762 , H10N50/80
CPC分类号： H10N50/10 , H01L21/76802 , H01L21/762 , H10N50/80 , H10N35/01
摘要： A semiconductor device includes a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, a passivation layer on the first MTJ and the second MTJ, and an ultra low-k (ULK) dielectric layer on the passivation layer. Preferably, a top surface of the passivation layer between the first MTJ and the second MTJ is lower than a top surface of the passivation layer directly on top of the first MTJ.
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公开(公告)号：US11737370B2
公开(公告)日：2023-08-22
申请号：US17141194
申请日：2021-01-04
发明人： Hui-Lin Wang , Tai-Cheng Hou , Wei-Xin Gao , Fu-Yu Tsai , Chin-Yang Hsieh , Chen-Yi Weng , Jing-Yin Jhang , Bin-Siang Tsai , Kun-Ju Li , Chih-Yueh Li , Chia-Lin Lu , Chun-Lung Chen , Kun-Yuan Liao , Yu-Tsung Lai , Wei-Hao Huang
IPC分类号： H01L41/47 , H10N50/10 , H01L21/768 , H01L21/762 , H10N50/80 , H10N35/01
CPC分类号： H10N50/10 , H01L21/762 , H01L21/76802 , H10N50/80 , H10N35/01
摘要： A semiconductor device includes a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, a passivation layer on the first MTJ and the second MTJ, and an ultra low-k (ULK) dielectric layer on the passivation layer. Preferably, a top surface of the passivation layer between the first MTJ and the second MTJ is lower than a top surface of the passivation layer directly on top of the first MTJ.
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公开(公告)号：US12101080B2
公开(公告)日：2024-09-24
申请号：US18302440
申请日：2023-04-18
申请人： Soitec
发明人： Arnaud Castex , Daniel Delprat , Bernard Aspar , Ionut Radu
IPC分类号： H03H9/02 , H03H3/04 , H03H3/10 , H03H9/64 , H10N30/00 , H10N30/072 , H10N30/073 , H10N30/082 , H10N30/086 , H10N30/853 , H10N35/01
CPC分类号： H03H9/02834 , H03H3/04 , H03H3/10 , H03H9/02574 , H10N30/072 , H10N30/073 , H10N30/704 , H10N30/8542 , H03H9/6496 , H10N30/082 , H10N30/086 , H10N35/01 , Y10T29/42
摘要： The present invention relates to a heterostructure, in particular, a piezoelectric structure, comprising a cover layer, in particular, a layer of piezoelectric material, the material of the cover layer having a first coefficient of thermal expansion, assembled to a support substrate, the support substrate having a second coefficient of thermal expansion substantially different from the first coefficient of thermal expansion, at an interface wherein the cover layer comprises at least a recess extending from the interface into the cover layer, and its method of fabrication.
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公开(公告)号：US20230320229A1
公开(公告)日：2023-10-05
申请号：US18195383
申请日：2023-05-10
发明人： Hui-Lin Wang , Tai-Cheng Hou , Wei-Xin Gao , Fu-Yu Tsai , Chin-Yang Hsieh , Chen-Yi Weng , Jing-Yin Jhang , Bin-Siang Tsai , Kun-Ju Li , Chih-Yueh Li , Chia-Lin Lu , Chun-Lung Chen , Kun-Yuan Liao , Yu-Tsung Lai , Wei-Hao Huang
IPC分类号： H10N50/10 , H01L21/768 , H01L21/762 , H10N50/80
CPC分类号： H10N50/10 , H01L21/762 , H01L21/76802 , H10N50/80 , H10N35/01
摘要： A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) on a substrate; forming a first ultra low-k (ULK) dielectric layer on the first MTJ; performing a first etching process to remove part of the first ULK dielectric layer and form a damaged layer on the first ULK dielectric layer; and forming a second ULK dielectric layer on the damaged layer.
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公开(公告)号：US11778922B2
公开(公告)日：2023-10-03
申请号：US17533003
申请日：2021-11-22
发明人： Hui-Lin Wang , Tai-Cheng Hou , Wei-Xin Gao , Fu-Yu Tsai , Chin-Yang Hsieh , Chen-Yi Weng , Jing-Yin Jhang , Bin-Siang Tsai , Kun-Ju Li , Chih-Yueh Li , Chia-Lin Lu , Chun-Lung Chen , Kun-Yuan Liao , Yu-Tsung Lai , Wei-Hao Huang
IPC分类号： H01L41/47 , H10N50/10 , H01L21/768 , H01L21/762 , H10N50/80 , H10N35/01
CPC分类号： H10N50/10 , H01L21/762 , H01L21/76802 , H10N50/80 , H10N35/01
摘要： A method for fabricating semiconductor device includes first forming a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, performing an atomic layer deposition (ALD) process or a high-density plasma (HDP) process to form a passivation layer on the first MTJ and the second MTJ, performing an etching process to remove the passivation layer adjacent to the first MTJ and the second MTJ, and then forming an ultra low-k (ULK) dielectric layer on the passivation layer.
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公开(公告)号：US20240215455A1
公开(公告)日：2024-06-27
申请号：US18556133
申请日：2022-04-19
发明人： Kazuhiko Okubo , Yuki Sendan , Kiyoshi Izumi
CPC分类号： H10N35/85 , C22C38/002 , H10N35/01 , H10N35/101
摘要： The magnetostrictive member contains an iron-based alloy crystal having magnetostrictive characteristics and is a plate-like body having front and back faces. In one of the front and back faces, a thickness and a surface roughness Ra of the magnetostrictive member satisfy Expression (1): log Ra≥0.48t−0.62. In Expression (1), log indicates a common logarithm, Ra the surface roughness (μm), and t the thickness of the magnetostrictive member (mm).
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8.发明公开公开(公告)号：US20240118355A1
公开(公告)日：2024-04-11
申请号：US18242624
申请日：2023-09-06
发明人： Peng LI , Qiancheng LV , Bing TIAN , Zejie TAN , Zhiming WANG , Jie WEI , Renze CHEN , Xiaopeng FAN , Zhong LIU , Zhenheng XU , Senjing YAO , Licheng LI , Yuehuan LIN , Shengrong LIU , Bofeng LUO , Jiaming ZHANG , Xu YIN
CPC分类号： G01R33/098 , H10N35/01 , H10N35/101
摘要： The present disclosure relates to a wide-range perpendicular sensitive magnetic sensor and the method for manufacturing the same, the magnetic sensor includes a substrate, a plurality of magnetic tunnel junctions, a plurality of magnetic flux regulators, a first output port and a second output port.
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公开(公告)号：US20240118317A1
公开(公告)日：2024-04-11
申请号：US18549104
申请日：2022-03-02
发明人： James Geza DEAK , Zhimin ZHOU
CPC分类号： G01R3/00 , G01R33/09 , G11B5/3967 , H10N35/01
摘要： Disclosed in the embodiments of the present invention are a laser writing apparatus and method for programming magnetoresistive devices. The apparatus comprises: a substrate, a magnetoresistive sensor and a thermal control layer which are sequentially arranged in a stacked manner. A non-magnetic insulating layer for electrical isolation is provided between the magnetoresistive sensor and the thermal control layer. The magnetoresistive sensor is composed of a magnetoresistive sensing unit which is a multilayer thin-film stacked structure containing an anti-ferromagnetic layer. The laser writer programming apparatus is used during the laser writer programming phase, along with varied parameters of the thermal control layers and/or magnetoresistive sensors, to change the thermal gradient produced by the laser on the magnetoresistive sensor, to increase or decrease the temperature change of the magnetoresistive sensor at the same laser power, and the film parameters use d to do this include material composition and film thickness. Through the embodiments of this invention, high precision laser programming of a magneotresistive sensor is obtained, with improved magnetoresistive sensor manufacturability, improved magnetoresistive sensor noise performance, and with improved magnetoresistive sensor detectability.
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10.发明授权公开(公告)号：US11953568B1
公开(公告)日：2024-04-09
申请号：US18242624
申请日：2023-09-06
发明人： Peng Li , Qiancheng Lv , Bing Tian , Zejie Tan , Zhiming Wang , Jie Wei , Renze Chen , Xiaopeng Fan , Zhong Liu , Zhenheng Xu , Senjing Yao , Licheng Li , Yuehuan Lin , Shengrong Liu , Bofeng Luo , Jiaming Zhang , Xu Yin
CPC分类号： G01R33/098 , H10N35/01 , H10N35/101
摘要： The present disclosure relates to a wide-range perpendicular sensitive magnetic sensor and the method for manufacturing the same, the magnetic sensor includes a substrate, a plurality of magnetic tunnel junctions, a plurality of magnetic flux regulators, a first output port and a second output port.
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