摘要:
An Ir—M—O composite film has been provided that is useful in forming an electrode of a ferroelectric capacitor, where M includes a variety of refractory metals. The Ir combination film is resistant to high temperature annealing in oxygen environments. When used with an underlying barrier layer made from the same variety of M transition metals, the resulting conductive barrier also suppresses to diffusion of Ir into any underlying Si substrates. As a result, Ir silicide products are not formed, which degrade the electrode interface characteristics. That is, the Ir combination film remains conductive, not peeling or forming hillocks, during high temperature annealing processes, even in oxygen. The Ir—M—O conductive electrode/barrier structures are useful in nonvolatile FeRAM devices, DRAMs, capacitors, pyroelectric infrared sensors, optical displays, optical switches, piezoelectric transducers, and surface acoustic wave devices. A method for forming an Ir—M—O composite film barrier layer and an Ir—M—O composite film ferroelectric electrode are also provided.
摘要:
A method of synthesizing a PGO spin-coating precursor solution includes utilizing the starting materials of lead acetate trihydrate (Pb(OAc)2•3H2O) and germanium alkoxide (Ge(OR)4(R=C2H5 and CH(CH3)2)). The organic solvent is di(ethylene glycol) ethyl ether. The mixed solution of lead and di(ethylene glycol) ethyl ether is heated in an atmosphere of air at a temperature no greater than 185° C., and preferably no greater than 190° C. for a time period in a range of thirty minutes to four hours. During the heating step the color of the solution is monitored to determine when the reaction is complete and when decomposition of the desired product begins to take place. The solution is then added to germanium di(ethylene glycol) ethyl ether to make the PGO spin-coating solution. This second step also entails heating the solution to a temperature no greater than 190° C. for a time period in a range of 0.5 to 2.0 hours. The process results in a PGO precursor solution suitable for use in spin-coating.
摘要:
A thin film structure includes a substantially single-phase, c-axis PGO film on an insulator for use in metal ferroelectric insulator semiconductor single transistor non-volatile memory applications. The PGO on insulator structure can also be used in capacitors, pyroelectric infrared sensors, optical displays, optical switches, piezoelectric transducers, and surface acoustic wave devices. In a preferred embodiment, the PGO film is deposited on a Zirconium Oxide insulator layer.
摘要:
A method of forming an electrode and a ferroelectric thin film thereon, includes preparing a substrate; depositing an electrode on the substrate, wherein the electrode is formed of a material taken from the group of materials consisting of iridium and iridium composites; and forming a single-phase, c-axis PGO ferroelectric thin film thereon, wherein the ferroelectric thin film exhibits surface smoothness and uniform thickness. An integrated circuit includes a substrate; an electrode deposited on the substrate, wherein the electrode is formed of a material taken from the group of materials consisting of iridium and iridium composites, wherein the iridium composites are taken from the group of composites consisting of IrO2, Ir—Ta—O, Ir—Ti—O, Ir—Nb—O, Ir—Al—O, Ir—Hf—O, Ir—V—O, Ir—Zr—O and Ir—O; and a single-phase, c-axis PGO ferroelectric thin film formed on the electrode, wherein the ferroelectric thin film exhibits surface smoothness and uniform thickness.
摘要:
A method of forming an electrode and a ferroelectric thin film thereon, includes preparing a substrate; depositing an electrode on the substrate, wherein the electrode is formed of a material taken from the group of materials consisting of iridium and iridium composites; and forming a single-phase, c-axis PGO ferroelectric thin film thereon, wherein the ferroelectric thin film exhibits surface smoothness and uniform thickness. An integrated circuit includes a substrate; an electrode deposited on the substrate, wherein the electrode is formed of a material taken from the group of materials consisting of iridium and iridium composites, wherein the iridium composites are taken from the group of composites consisting of IrO2, Ir—Ta—O, Ir—Ti—O, Ir—Nb—O, Ir—Al—O, Ir—Hf—O, Ir—V—O, Ir—Zr—O and Ir—O; and a single-phase, c-axis PGO ferroelectric thin film formed on the electrode, wherein the ferroelectric thin film exhibits surface smoothness and uniform thickness.
摘要:
A method of preparing a PGO solution for spin coating includes preparing a 2-methoxyethanol organic solvent; adding Pb(OCH3CO)2.3H2O to the organic solvent at ambient temperature and pressure in a nitrogen-filled glaved box to form Pb in methoxyethanol; refluxing the solution in a nitrogen atmosphere at 150° C. for at least two hours; fractionally distilling the refluxed solution at approximately 150° C. to remove all of the water from the solution; cooling the solution to room temperature; determining the Pb concentration of the solution; adding the 2-methoxyethanol solution to the Pb 2-methoxyethanol until a desired Pb concentration is achieved; combining Ge(OR)4, where R is taken the group of Rs consisting of CH2CH3 and CH(CH3)2, and 2-methoxyethanol; and adding Ge(OR)4 2-methoxyethanol to PbO 2-methoxyethanol to form the PGO solution having a predetermined metal ion concentration and a predetermined Pb:Ge molar ration.
摘要:
A method of monitoring the synthesis of a PGO spin-coating precursor solution includes monitoring heating of the solution with a UV spectrometer and terminating the heating step when a solution property reaches a predetermined value. The method utilizes the starting materials of lead acetate trihydrate (Pb(OAc)2.3H2O) and germanium alkoxide (Ge(OR)4 (R=C2H5 and CH(CH3)2)). The organic solvent is di(ethylene glycol)ethyl ether. The mixed solution of lead and di(ethylene glycol)ethyl ether is heated in an atmosphere of air at a temperature no greater than 190° C., and preferably no greater than 185° C. for a time period in a range of approximately eighty-five minutes. During the heating step the solution properties are monitored to determine when the reaction is complete and when decomposition of the desired product begins to take place. The solution is then added to germanium di(ethylene glycol)ethyl ether to make the PGO spin-coating solution. This second step also entails heating the solution to a temperature no greater than 190° C. for a time period in a range of 0.5 to 2.0 hours. This heating step is also monitored with a UV spectrometer to determine when the heating step should be terminated. The process results in a PGO precursor solution suitable for use in spin-coating.
摘要:
An Ir—M—O composite film has been provided that is useful in forming an electrode of a ferroelectric capacitor, where M includes a variety of refractory metals. The Ir combination film is resistant to high temperature annealing in oxygen environments. When used with an underlying barrier layer made from the same variety of M transition metals, the resulting conductive barrier also suppresses to diffusion of Ir into any underlying Si substrates. As a result, Ir silicide products are not formed, which degrade the electrode interface characteristics. That is, the Ir combination film remains conductive, not peeling or forming hillocks, during high temperature annealing processes, even in oxygen. The Ir—M—O conductive electrode/barrier structures are useful in nonvolatile FeRAM devices, DRAMs, capacitors, pyroelectric infrared sensors, optical displays, optical switches, piezoelectric transducers, and surface acoustic wave devices. A method for forming an Ir—M—O composite film barrier layer and an Ir—M—O composite film ferroelectric electrode are also provided.
摘要:
A method of fabricating a continuous layer of a defect sensitive material on a silicon substrate includes preparing a silicon substrate; forming a nanostructure array directly on the silicon substrate; depositing a selective growth enhancing layer on the substrate; smoothing the selective growth enhancing layer; and growing a continuous layer of the defect sensitive material on the nanostructure array.
摘要:
A method of fabricating resistor memory array includes preparing a silicon substrate; depositing a bottom electrode, a sacrificial layer, and a hard mask layer on a substrate P+ layer; masking, patterning and etching to remove, in a first direction, a portion of the hard mask, the sacrificial material, the bottom electrode; depositing a layer of silicon oxide; masking, patterning and etching to remove, in a second direction perpendicular to the first direction, a portion of the hard mask, the sacrificial material, the bottom electrode;, and over etching to an N+ layer and at least 100 nm of the silicon substrate; depositing of a layer of silicon oxide; etching to remove any remaining hard mask and any remaining sacrificial material; depositing a layer of CMR material; depositing a top electrode; applying photoresist, patterning the photoresist and etching the top electrode; and incorporating the memory array into an integrated circuit.