公开(公告)号：US06329713B1

公开(公告)日：2001-12-11

申请号：US09176654

申请日：1998-10-21

申请人： Donald Seton Farquhar ,  Lisa Jeanine Jimarez ,  Michael Joseph Klodowski ,  Jeffrey Alan Zimmerman

发明人： Donald Seton Farquhar ,  Lisa Jeanine Jimarez ,  Michael Joseph Klodowski ,  Jeffrey Alan Zimmerman

IPC分类号： H01L2308

CPC分类号： H01L25/0655 ,  H01L23/49816 ,  H01L23/5387 ,  H01L24/32 ,  H01L24/48 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05599 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2224/83856 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

摘要： An integrated circuit chip carrier assembly is provided by joining a substrate having electrically conductive regions on at least one major surface thereof to a stiffener by a bonding film. The bonding film comprises a dielectric substrate having a thermoset adhesive on both of its major surfaces. The thermoset adhesive prior to the bonding is a B-stage adhesive, is tack-free at normal room temperatures and is solvent free.

摘要翻译： 通过将具有至少一个主表面上的导电区域的基板通过接合膜连接到加强件来提供集成电路芯片载体组件。 接合膜包括在其主表面上具有热固性粘合剂的电介质基底。 在粘合之前的热固性粘合剂是B阶粘合剂，在正常室温下是无粘性的并且是无溶剂的。

公开(公告)号：US06426545B1

公开(公告)日：2002-07-30

申请号：US09502078

申请日：2000-02-10

申请人： Charles W. Eichelberger ,  James E. Kohl

发明人： Charles W. Eichelberger ,  James E. Kohl

IPC分类号： H01L2308

CPC分类号： H01L24/19 ,  H01L23/3157 ,  H01L23/49894 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/20 ,  H01L2224/73267 ,  H01L2224/97 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2224/82 ,  H01L2224/83

摘要： Structures and methods are provided for absorbing stress between a first electrical structure and a second electrical structure connected together, wherein the first and second structures have different coefficients of thermal expansion. A dielectric material is disposed on at least one of the first and second electrical structures. This dielectric material is a low modulus material which has a high ultimate elongation property (LMHE dielectric). Preferably, the LMHE dielectric has a Young's modulus of less than 50,000 psi and an ultimate elongation property of at least 20 percent. The LMHE dielectric can be photo patternable to facilitate formation of via openings therein and a metal layer is formed above the LMHE dielectric which has conductors capable of expanding or contracting with the dielectric. Conductors of the metal layer disposed above the dielectric and connected to vias in the dielectric have a length significantly greater than the maximum displacement due to thermal expansion between the first and second electrical structures, e.g., a length which is at least five times the displacement.

摘要翻译： 提供了用于吸收连接在一起的第一电气结构和第二电气结构之间的应力的结构和方法，其中第一和第二结构具有不同的热膨胀系数。 电介质材料设置在第一和第二电结构中的至少一个上。 该介电材料是具有高极限伸长率（LMHE电介质）的低模量材料。 优选地，LMHE电介质的杨氏模量小于50,000psi，极限伸长率至少为20％。 LMHE电介质可以是光可图案化的，以便于其中形成通孔开口，并且在LMHE电介质上形成金属层，其具有能够与电介质膨胀或收缩的导体。 设置在电介质上方并连接到电介质中的通孔的金属层的导体的长度显着大于由于第一和第二电结构之间的热膨胀而引起的最大位移，例如至少为位移的五倍的长度。