DIAMOND WAFER DIVIDING METHOD AND CHIP MANUFACTURING METHOD

    公开(公告)号:US20230071868A1

    公开(公告)日:2023-03-09

    申请号:US17821347

    申请日:2022-08-22

    申请人: DISCO CORPORATION

    发明人: Yoshiaki SHIMIZU

    IPC分类号: H01L21/268 B23K26/50

    摘要: There is provided a diamond wafer dividing method used when the diamond wafer having a front surface along the {100} plane is divided at planned dividing lines along the direction. The dividing method includes a first modified layer forming step of forming a first modified layer at a linear first region along the planned dividing line, inside the diamond wafer, a second modified layer forming step of forming a second modified layer at a linear second region shifted from the first region in the width direction and the thickness direction with respect to the front surface, and a dividing step of dividing the diamond wafer along the planned dividing lines by giving a force to the diamond wafer in which the first modified layer and the second modified layer are formed.

    WORKTABLE FOR LASER PROCESSING
    6.
    发明申请

    公开(公告)号:US20220305596A1

    公开(公告)日:2022-09-29

    申请号:US17526470

    申请日:2021-11-15

    IPC分类号: B23K37/04 B23K26/50

    摘要: A worktable for laser processing includes a lower plate, internal blocks, and external blocks. The lower plate includes a first area, a second area surrounding the first area, and a third area surrounding the second area. The internal blocks are disposed on the lower plate in the first area and the external blocks are disposed on the lower plate in the third area. The external blocks surround the internal blocks.

    LASER LIFT-OFF METHOD FOR SEPARATING SUBSTRATE AND SEMICONDUCTOR-EPITAXIAL STRUCTURE

    公开(公告)号:US20220285218A1

    公开(公告)日:2022-09-08

    申请号:US17194100

    申请日:2021-03-05

    申请人: SKY TECH INC.

    摘要: The present disclosure provides a laser lift-off method for separating substrate and semiconductor-epitaxial structure, which includes: providing at least one semiconductor device, wherein the semiconductor device includes a substrate and at least one semiconductor-epitaxial structure disposed in a stack-up manner; irradiating a laser onto an edge area of the semiconductor device to separate portions of the substrate and the semiconductor-epitaxial structure in the edge area; and pressing against the edge area of the semiconductor device vis a pressing device, then irradiating the laser onto an inner area of the semiconductor device to separate portions of the substrate and the semiconductor-epitaxial structure in the inner area wherein gas is generated during separating the portions of the substrate and the semiconductor-epitaxial structure in the inner area and evacuated from the edge area, to prevent damage of the semiconductor-epitaxial structure during the separating process.

    WAFER DIVIDING METHOD AND DIVIDING APPARATUS

    公开(公告)号:US20220238379A1

    公开(公告)日:2022-07-28

    申请号:US17648460

    申请日:2022-01-20

    申请人: DISCO CORPORATION

    发明人: Kenji FURUTA

    摘要: A wafer dividing method includes forming modified layers which will be starting points of division, integrally attaching an annular frame and the wafer together through a dicing tape, directing the wafer downward and expanding the dicing tape to divide, into individual device chips, the wafer along the modified layers formed along the streets, counting particles scattered at the time of division of the wafer by a particle counter disposed in a dust collection path set directly below the wafer, and determining, on the basis of the number of the particles, whether or not the modified layers have been properly formed, at the time of carrying out the dividing step.

    Laser-colored sapphire material
    9.
    发明授权

    公开(公告)号:US11325860B2

    公开(公告)日:2022-05-10

    申请号:US16583204

    申请日:2019-09-25

    申请人: Apple Inc.

    摘要: A colored sapphire material and methods for coloring sapphire material using lasers are disclosed. The method for coloring the sapphire material may include positioning the sapphire material over an opaque substrate material, exposing the opaque substrate material to a laser beam passing through the sapphire material to impact the substrate material, and inducing a chemical change in a portion of the sapphire material exposed to the laser beam. The method may also include creating a visible color in the portion of the sapphire material as a result of the chemical change. The colored sapphire material may include a first transparent portion, and a second, colored portion substantially surrounded by the first portion. The second, colored portion may have a chemical composition different than that of the first portion.

    FLOTATION CONVEYANCE APPARATUS AND LASER PROCESSING APPARATUS

    公开(公告)号:US20210252635A1

    公开(公告)日:2021-08-19

    申请号:US17149103

    申请日:2021-01-14

    IPC分类号: B23K26/08 B23K26/50

    摘要: A flotation conveyance apparatus according to an embodiment conveys a substrate while floating the substrate by ejecting a gas to a lower surface of the substrate. The flotation conveyance apparatus includes an upper plate disposed on the substrate side including a plurality of ejecting ports for ejecting the gas and a lower plate disposed under the upper plate. Flow-paths for supplying the gas to the plurality of ejecting ports are provided on at least one of the upper plate and the lower plate.