摘要:
A machine control device is configured to include a measurement unit that measures regarding a state of a controlled object handled by a machine apparatus, a determination unit that determines a constraint determination value by comparing the measurement result by the measurement unit with a predetermined constraint condition, control units and that perform operation control for the machine apparatus based on the constraint determination value determined by the determination unit according to the relationship set for the constraint determination value and the operation control, and a learning unit that reconfigures the relationship between the constraint determination value and the operation control when the constraint determination value changes due to the operation control performed by the control units.
摘要:
A solid electrolyte material having high ion conductivity and a all-solid-state lithium-ion secondary battery using this solid electrolyte material are provided. The solid electrolyte material has a garnet-related structure crystal represented by the chemical composition Li7−x−yLa3Zr2−x−yTaxNbyO12 (0.05≤x+y≤0.2, x≥0, y≥0), which belongs to an orthorhombic system and a space group belonging to Ibca. The solid electrolyte material has lithium-ion conductivity at 25° C. of at least 1.0×10−4 S/cm. Also, in this solid electrolyte material, the lattice constants are 1.29 nm≤a≤1.32 nm, 1.26 nm≤b≤1.29 nm, and 1.29 nm≤c≤1.32 nm, and three 16f sites and one 8d site in the crystal structure are occupied by lithium-ions. The all-solid-state lithium-ion secondary battery has a positive electrode, a negative electrode, and a solid electrolyte, the solid electrolyte comprising this solid electrolyte material.
摘要:
The present invention provides a method and apparatus for controlling the growth of a silicon ingot in which the diameter of the growing silicon ingot can be accurately measured. A camera captures an image of the interface ring between the growing silicon ingot and the silicon melt. An image processor extracts local intensity maxima from the captured image, which are then digitized into an image data which comprises attributes of the pixels forming the local intensity maxima. An analyzer statistically analyzes the image data to derive parameters of an equation statistically simulating the interface ring. A probabilistic filter conducts the statistical analysis on the equation in which the respective pixels are weighted by their weight factors. The weight factor functions to attenuate the effect of noises caused by pixels which do not represent the interface ring. The statistical analysis may be repeated, using the renewed parameters, to progressively attenuate the effect of the noises to thereby obtain a satisfactorily accurate diameter of the silicon ingot.
摘要:
Disclosed herein is an apparatus for manufacturing a polycrystalline silicon ingot for solar batteries having a door control device using a hinge. The apparatus includes a vacuum chamber, a crucible, a susceptor which surrounds the crucible, a heater which heats the crucible, and an insulation plate which is disposed below the susceptor and has an opening therein. The apparatus further includes a cooling plate which moves upwards through the opening of the insulation plate and comes into close contact with or approaches the lower end of the susceptor, a cooling plate moving unit which actuates the cooling plate, a temperature sensor which measures the temperature of the crucible, and a control unit which controls the temperature in the crucible and the cooling plate moving unit. Furthermore, a door is provided on the insulation plate to open or close the opening of the insulation plate. The hinge is provided between the door and the insulation plate. Thus, after the raw silicon material is melted, when the cooling plate moves upwards to cool the crucible and thus pushes the lower surface of the door upwards, the door is opened by the hinge in a swinging manner, and when the cooling plate approaches or comes into contact with the lower end of the susceptor, one end of the opened door is leaned on a corresponding surface of the cooling plate.
摘要:
Disclosed herein is an apparatus for manufacturing a polycrystalline silicon ingot for solar batteries having a door control device using a hinge. The apparatus includes a vacuum chamber, a crucible, a susceptor which surrounds the crucible, a heater which heats the crucible, and an insulation plate which is disposed below the susceptor and has an opening therein. The apparatus further includes a cooling plate which moves upwards through the opening of the insulation plate and comes into close contact with or approaches the lower end of the susceptor, a cooling plate moving unit which actuates the cooling plate, a temperature sensor which measures the temperature of the crucible, and a control unit which controls the temperature in the crucible and the cooling plate moving unit. Furthermore, a door is provided on the insulation plate to open or close the opening of the insulation plate. The hinge is provided between the door and the insulation plate. Thus, after the raw silicon material is melted, when the cooling plate moves upwards to cool the crucible and thus pushes the lower surface of the door upwards, the door is opened by the hinge in a swinging manner, and when the cooling plate approaches or comes into contact with the lower end of the susceptor, one end of the opened door is leaned on a corresponding surface of the cooling plate.
摘要:
A method of making a single crystal of lead magnesium niobate-lead titanate (PMN-PT). The method includes providing a flat-bottomed iridium crucible containing PMN-PT starting material, and placing the crucible into a vertical Bridgman furnace having at least two temperature zones, which is subsequentially pressured with an inert gas. The crucible then descends into the temperature zones of the vertical Bridgman furnace. The temperature zones of the vertical Bridgman furnace include a first temperature zone having a temperature higher than a melting temperature of the PMN-PT material and a second temperature zone having a temperature less than the melting temperature of the PMN-PT material. The single crystals of the PMN-PT prepared using the above-described method exhibits a [110] crystal orientation and may be used in electroacoustic transducers. The electroacoustic transducers are useful in devices that detect or generate acoustic waves.
摘要:
A charging material made from semiconductor material, is used for charging or recharging a melting crucible during the Czochralski crucible-pulling process. This charging material has a polycrystalline semiconductor rod, which at one end has a groove, and a monocrystalline semiconductor rod, which at one end has a tongue, which rods are coupled by means of a tongue-and-groove connection. There is also a holding system for holding a polycrystalline silicon rod during the Czochralski crucible-pulling process or the float zone process, which has a tongue-and-groove connection between the polycrystalline semiconductor rod, which at one end has a groove, and a monocrystalline semiconductor rod, which at one end has a tongue.
摘要:
An apparatus for growing a GaAs single crystal by relying on the floating zone technique in a cylinder charged with a GaAs polycrystal and a GaAs single seed crystal, comprising an As container communicating with the interior of the cylinder to supply an optimum vapor pressure of As into the cylinder under the condition that a continuous temperature variation is established between this As container and the GaAs crystals charged in the cylinder, whereby a GaAs single crystal having little deviation from stoichiometry and having a good crystal perfection is obtained.
摘要:
Polycrystalline semiconductor rods are converted to dislocation-free monocrystal rods by positioning a polycrystalline rod within a crucible-free zone melt environment with a seed crystal attached to one end thereof, generating a melt zone at the juncture of the seed crystal and the polycrystalline rod, controllably moving the melt zone away from the juncture and through the polycrystalline rod to a select point thereon, uniformly supporting the cone-shaped lower portion of the rod being processed so as to prevent oscillations and the like at the juncture of the rod in the seed crystal and controllably moving the melt zone from the select point to the remainder of the rod. A uniform support is preferably provided by an axially movable funnel-shaped casing which is attached to the seed crystal holding member and which, when moved into its operating position, is filled with a self-adjusting oscillation or vibration dampening means, such as molten metal, metal spheroids, quartz particles, sand, etc.
摘要:
An improved method for initiating the inductive heating of semiconductors in the float zone refining process in which the oscillator circuit generating the required radio frequency energy is initially powered from a constant current source thereby controlling the rate of temperature rise for the semiconductor.