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    DIAMOND GAMMAVOLTAIC CELL
    1.
    发明公开
    DIAMOND GAMMAVOLTAIC CELL 审中-公开

    公开(公告)号：US20230261131A1

    公开(公告)日：2023-08-17

    申请号：US17674384

    申请日：2022-02-17

    申请人： The University of Bristol

    发明人： Gordon Robson MACKENZIE ,  Thomas Bligh SCOTT ,  Neil Anthony FOX ,  Chris HUTSON

    IPC分类号： H01L31/08 ,  H01L31/118

    CPC分类号： H01L31/085 ,  H01L31/118

    摘要： Provided herein is a diamond gammavoltaic cell comprising: a diamond body having a diamond body surface including first and second opposing surfaces; a low-barrier electrical contact formed on the first surface; and a high-barrier electrical contact formed on the second surface, wherein the diamond body surface that is not in contact with either the low-barrier electrical contact or the high-barrier electrical contact is at least partially surface transfer doped to provide a p-type surface.

    Photosensitive component, x-ray detector and display device
    2.
    发明授权
    Photosensitive component, x-ray detector and display device 有权

    公开(公告)号：US11705533B2

    公开(公告)日：2023-07-18

    申请号：US17257632

    申请日：2019-12-27

    申请人： HKC CORPORATION LIMITED

    发明人： En-tsung Cho

    IPC分类号： H01L31/118 ,  H01L31/115 ,  G06F1/16

    CPC分类号： H01L31/118 ,  G06F1/1684 ,  H01L31/115

    摘要： Disclosed is a photosensitive component, including: an intrinsic layer; a first doped layer provided on a light incident side of the intrinsic layer; and a second doped layer provided on a light exit side of the intrinsic layer; the intrinsic layer, the first doped layer and the second doped layer are all doped with a dopant, and silicon ions are injected into the intrinsic layer, the first doped layer and the second doped layer. An X-ray detector and a display device are further disclosed.

    RADIATION DETECTOR AND METHOD FOR MANUFACTURING THEREOF
    3.
    发明申请
    RADIATION DETECTOR AND METHOD FOR MANUFACTURING THEREOF 有权

    公开(公告)号：US20220397687A1

    公开(公告)日：2022-12-15

    申请号：US17619597

    申请日：2020-06-16

    申请人： DETECTION TECHNOLOGY OYJ

    发明人： Alex WINKLER

    IPC分类号： G01T1/20 ,  H01L31/118 ,  H01L27/146

    摘要： An object to provide a radiation detector and method for manufacturing a radiation detector. According to an embodiment, a radiation detector includes: a photodiode layer having at least one pixel; and a scintillator layer including at least one geometrical shape including a scintillating material and a polymer, wherein the scintillating material is configured to convert incident ionising radiation into nonionising electromagnetic radiation, and wherein the at least one geometrical shape is configured to guide at least part of the converted electromagnetic radiation into the at least one pixel. A radiation detector and a method for manufacturing a radiation detector are also disclosed.

    Semiconductor detector
    5.
    发明授权
    Semiconductor detector 有权

    公开(公告)号：US10388818B2

    公开(公告)日：2019-08-20

    申请号：US15625473

    申请日：2017-06-16

    申请人： NUCTECH COMPANY LIMITED

    发明人： Lan Zhang ,  Yingshuai Du ,  Bo Li ,  Zonggui Wu ,  Jun Li ,  Xuepeng Cao ,  Haifan Hu ,  Jianping Gu ,  Guangming Xu ,  Bicheng Liu

    IPC分类号： H01L31/118 ,  G01T1/24 ,  G01T1/02 ,  H01L27/144 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/032

    摘要： There is provided a semiconductor detector. According to an embodiment, the semiconductor detector may include a semiconductor detection material including a first side and a second side opposite to each other. One of the first side and the second side is a ray incident side that receives incident rays. The detector may further include a plurality of pixel cathodes disposed on the first side and a plurality of pixel anodes disposed on the second side. The pixel anodes and the pixel cathodes correspond to each other one by one. The detector may further include a barrier electrode disposed on a periphery of respective one of the pixel cathodes or pixel anodes on the ray incident side. According to the embodiment of the present disclosure, it is possible to effectively suppress charge sharing between the pixels and thus to improve an imaging resolution of the detector.

    Schottky barrier detection devices having a 4H-SiC n-type epitaxial layer
    9.
    发明授权
    Schottky barrier detection devices having a 4H-SiC n-type epitaxial layer 有权
    具有4H-SiC n型外延层的肖特基势垒检测器件

    公开(公告)号：US09515211B2

    公开(公告)日：2016-12-06

    申请号：US14444140

    申请日：2014-07-28

    申请人： Krishna C. Mandal ,  J. Russell Terry

    发明人： Krishna C. Mandal ,  J. Russell Terry

    IPC分类号： H01L31/0312 ,  H01L31/036 ,  H01L31/118 ,  H01L33/00

    CPC分类号： H01L31/036 ,  H01L31/0312 ,  H01L31/118 ,  H01L33/0033

    摘要： A detection device, along with methods of its manufacture and use, is provided. The detection device can include: a SiC substrate defining a substrate surface cut from planar to about 12°; a buffer epitaxial layer on the substrate surface; a n-type epitaxial layer on the buffer epitaxial layer; and a top contact on the n-type epitaxial layer. The buffer epitaxial layer can include a n-type 4H—SiC epitaxial layer doped at a concentration of about 1×1015 cm−3 to about 5×1018 cm−3 with nitrogen, boron, aluminum, or a mixture thereof. The n-type epitaxial layer can include a n-type 4H—SiC epitaxial layer doped at a concentration of about 1×1013 cm−3 to about 5×1015 cm−3 with nitrogen. The top contact can have a thickness of about 8 nm to about 15 nm.

    摘要翻译： 提供一种检测装置及其制造和使用方法。 检测装置可以包括：SiC衬底，其限定从平面切割到约12°的衬底表面; 衬底表面上的缓冲外延层; 缓冲外延层上的n型外延层; 和n型外延层上的顶部接触。 缓冲外延层可以包括以氮，硼，铝或其混合物掺杂浓度为约1×10 15 cm -3至约5×10 18 cm -3的n型4H-SiC外延层。 n型外延层可以包括用氮气掺杂浓度为约1×1013cm-3至约5×1015cm-3的n型4H-SiC外延层。 顶部接触可以具有约8nm至约15nm的厚度。

    SEMICONDUCTOR PHOTO-DETECTION DEVICE AND RADIATION DETECTION APPARATUS
    10.
    发明申请
    SEMICONDUCTOR PHOTO-DETECTION DEVICE AND RADIATION DETECTION APPARATUS 审中-公开

    公开(公告)号：US20140084172A1

    公开(公告)日：2014-03-27

    申请号：US14055902

    申请日：2013-10-17

    申请人： Hamamatsu Photonics K.K.

    发明人： Tatsumi YAMANAKA

    IPC分类号： H01L31/118 ,  G01T1/20

    CPC分类号： G01T1/2018 ,  G01T1/2006 ,  H01L27/1446 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14661 ,  H01L31/118

    摘要： On the front side of an n-type semiconductor substrate, p-type regions are two-dimensionally arranged in an array. A high-concentration n-type region and a p-type region are disposed between the p-type regions adjacent each other. The high-concentration n-type region is formed by diffusing an n-type impurity from the front side of the substrate so as to surround the p-type region as seen from the front side. The p-type region is formed by diffusing a p-type impurity from the front side of the substrate so as to surround the p-type region and high-concentration n-type region as seen from the front side. Formed on the front side of the n-type semiconductor substrate are an electrode electrically connected to the p-type region and an electrode electrically connected to the high-concentration n-type region and the p-type region.