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    GENERATING AUGMENTED DATA TO TRAIN MACHINE LEARNING MODELS TO PRESERVE PHYSICAL TRENDS
    2.
    发明申请
    GENERATING AUGMENTED DATA TO TRAIN MACHINE LEARNING MODELS TO PRESERVE PHYSICAL TRENDS 审中-公开

    公开(公告)号：WO2023084063A1

    公开(公告)日：2023-05-19

    申请号：PCT/EP2022/081686

    申请日：2022-11-12

    Applicant: ASML NETHERLANDS B.V.

    Inventor： REN, Jiaxing ,  FAN, Yongfa ,  CHEN, Yi-Yin ,  ZHANG, Chenji ,  ZHENG, Leiwu

    IPC: G03F7/20

    Abstract: Machine learning models can be trained to predict imaging characteristics with respect to variation in a pattern on a wafer resulting from a patterning process. However, due to low pattern coverage provided by limited wafer data used for training, machine learning models tend to overfit, and predictions from the machine learning models deviate from physical trends that characterize the pattern on the wafer and/or the patterning process with respect to the pattern variation. To enhance pattern coverage, training data is augmented with pattern data that conforms to a certain expected physical trend, and applies to new patterns not covered by previously measured wafer data.

    UTILITY STAGE FOR PHOTOLITHOGRAPHIC APPARATUS AND METHOD
    3.
    发明申请
    UTILITY STAGE FOR PHOTOLITHOGRAPHIC APPARATUS AND METHOD 审中-公开

    公开(公告)号：WO2023083582A1

    公开(公告)日：2023-05-19

    申请号：PCT/EP2022/079327

    申请日：2022-10-20

    Applicant: ASML NETHERLANDS B.V.

    Inventor： LEVY, Keane, Michael ,  NG, Amy

    IPC: G03F7/20

    Abstract: Disclosed is an apparatus for and method of using an in-system utility stage to provide service functions for wafer tables and other components in the photolithographic system in which the utility stage can access multiple tools without any need to open an enclosure containing the utility stage and the wafer tables and other components thus increasing throughput and decreasing downtime.

    PATTERN MATCHING METHOD
    6.
    发明申请
    PATTERN MATCHING METHOD 审中-公开

    公开(公告)号：WO2023066657A1

    公开(公告)日：2023-04-27

    申请号：PCT/EP2022/077591

    申请日：2022-10-04

    Applicant: ASML NETHERLANDS B.V.

    Inventor： FANG, Tsung-Pao ,  LIN, Wei-Chou ,  LIN, Hao ,  SONG, Chao

    IPC: G03F1/36 ,  G03F1/70 ,  G03F7/20

    Abstract: Described herein is a method for grouping patterns associated with one or more design layouts of a semiconductor. The method involves obtaining a set of patterns (e.g., from one or more design layouts), where a pattern of the set of patterns includes a non-intersected feature portion (e.g., parallel bars) within a bounding box of the pattern. A non-intersected feature portion of a pattern is encoded to a pattern representation having elements, where each element has a first component indicating a type of an individual non-intersected feature portion, and a second component indicating a width of the individual non-intersected feature portion projected along a designated edge of an area enclosing the pattern. The set of patterns are grouped into one or more groups by comparing the pattern representations associated the set of patterns.

    PATTERNING DEVICE DEFECT DETECTION SYSTEMS AND METHODS
    10.
    发明申请
    PATTERNING DEVICE DEFECT DETECTION SYSTEMS AND METHODS 审中-公开

    公开(公告)号：WO2023036561A1

    公开(公告)日：2023-03-16

    申请号：PCT/EP2022/072752

    申请日：2022-08-15

    Applicant: ASML NETHERLANDS B.V.

    Inventor： VAN LARE, Marie-Claire ,  WIELAND, Marco, Jan-Jaco

    IPC: G03F1/84 ,  G01N21/956 ,  G03F7/20 ,  G06T7/00

    Abstract: Since a mask check wafer can utilize a different process than a production wafer, a high-contrast illumination setting with lower pupil fill ratio (PFR) that leads to a reduction of the productivity of the scanner can be utilized. By selecting a high-contrast illumination setting, which is different than that used on a production wafer, an improved ratio of particle printability to stochastic defects can be achieved. In combination, or instead higher dose resist can be utilized. This allows longer exposure of the wafer, such that the impact of photon shot noise is reduced, also resulting in an improved ratio of particle printability to stochastic defects. As a result, the particle printability can be enhanced further without leading to an excessive amount of stochastic defects. Because of this, the number of sites, and therefore the throughput, of a charged particle inspection and analysis can be significantly improved.

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