Abstract:
Die Erfindung betrifft ein Verfahren zur Stabilisierung und Funktionalisierung einer porösen metallischen Schicht (1), wobei die poröse, metallische Schicht (1) eine metallische Matrix (3) mit darin enthaltenen Poren (5) enthält. In einem ersten Schritt wird keramisches Material (7) oder Vorstufen die keramisches Material (7) in die Poren (5) der metallischen Matix (3) eingebracht, in einem zweiten Schritt werden die Vorstufen des keramischen Materials gegebenenfalls in das keramische Material (7) umgewandelt und anschliessend erfolgt gegebenenfalls eine thermische oder chemische Nachbehandlung der porösen metallischen Schicht. Die Erfindung betrifft weiterhin eine poröse metallische Struktur, insbesondere für Gateelektroden von Halbleitertransistoren, die Poren (5) in einer metallischen Matrix (3) umfasst. In den Poren (5) der metallischen Matrix (3) ist keramisches Material enthalten.
Abstract:
A method of depositing a copper interconnection layer on a substrate such on a glass substrate for use e.g. in TFT-LCD flat panel interconnection system. The method according to the invention comprising the steps of: a) optionally cleaning the substrate, b) optionally micro-etching the substrate, c) depositing a catalyzation layer on the substrate to obtain a catalyzed substrate, d) conditioning the catalyzed substrate with a conditioning solution to obtain a conditioned catalyzed substrate, e) plating the catalyzed substrate with a NiP layer by contacting said substrate or at least a portion thereof with a wet bath mixture comprising precursors of Ni and P, f) depositing a copper catalyst layer onto the plated NiP layer, depositing a Cu layer on said copper catalyst layer.
Abstract:
Disclosed is a method for generating conductive surface patterns on a substrate by coating the substrate with metal particles and heating the coated substrate by means of microwave radiation. The process is easy to implement and can be used to generate metal pattern at low cost.
Abstract:
Supercritical fluid-assisted deposition of materials on substrates, such as semiconductor substrates for integrated circuit device manufacture. The deposition is effected using a supercritical fluid-based composition containing the precursor(s) of the material to be deposited on the substrate surface. Such approach permits use of precursors that otherwise would be wholly unsuitable for deposition applications, as lacking requisite volatility and transport characteristics for vapor phase deposition processes.
Abstract:
An electro-chemical plating system is described. A method is performed by the electro-chemical plating system in which a seed layer formed on a substrate is immersed into an electrolyte solution. In one aspect, a substrate is immersed in the electrochemical plating system by tilting the substrate as it enters the electrolyte solution to limit the trapping or formation of air bubbles in the electrolyte solution between the substrate and the substrate holder. In another aspect, an apparatus is provided for electroplating that comprises a cell, a substrate holder, and an actuator. The actuator can displace the substrate holder assembly in the x and z directions and also tilt the substrate. In another aspect, a method is provided of driving a meniscus formed by electrolyte solution across a surface of a substrate. The method comprises enhancing the interaction between the electrolyte solution meniscus and the surface as the substrate is immersed into the electrolyte solution.