公开(公告)号：WO2021231215A1

公开(公告)日：2021-11-18

申请号：PCT/US2021/031319

申请日：2021-05-07

Applicant: APPLIED MATERIALS, INC.

Inventor： ULAVI, Tejas ,  DAN, Arkaprava ,  MURTAGH, Mike ,  BALUJA, Sanjeev

IPC: H01L21/683 ,  H01L21/67 ,  H02N13/00 ,  G01R27/2605 ,  H01L21/67242 ,  H01L21/6833

Abstract: Substrate supports, substrate support assemblies and methods of using the substrate supports are described. The substrate support has a support surface with at least two electrodes and a plurality of purge channels bounded by a seal band. A power supply connected to the electrodes configured as an electrostatic chuck. A capacitance of the substrate is measured while on the substrate support to determine the chucking state of the substrate.

公开(公告)号：WO2021183767A1

公开(公告)日：2021-09-16

申请号：PCT/US2021/021914

申请日：2021-03-11

Applicant: APPLIED MATERIALS, INC.

Inventor： LI, Luping ,  WRENCH, Jacqueline S. ,  CHEN, Wen Ting ,  YANG, Yixiong ,  HWANG, In Seok ,  CHEN, Shih Chung ,  GANDIKOTA, Srinivas

IPC: C23C16/06 ,  C23C16/14 ,  C23C16/18 ,  C23C16/32 ,  C23C16/455 ,  C23C16/02 ,  C23C16/04 ,  G02B5/08 ,  G02B1/02

Abstract: Methods and apparatus for forming reflector films are described A liner is formed on a substrate surface followed by formation of the reflector layer so that there is no oxygen exposure between liner and reflector layer formation. In some embodiments, a high aspect ratio structure is filled with a reflector material by partially filling the structure with the reflector material while growth is inhibited at a top portion of the structure, reactivating the top portion of the substrate and then filling the structure with the reflector material.

公开(公告)号：WO2021072199A1

公开(公告)日：2021-04-15

申请号：PCT/US2020/054994

申请日：2020-10-09

Applicant: APPLIED MATERIALS, INC.

Inventor： ULAVI, Tejas ,  BALUJA, Sanjeev ,  KASHYAP, Dhritiman Subha

IPC: H01L21/67 ,  H05B1/02 ,  H05B3/68 ,  H05B3/28 ,  H01L21/687 ,  H01L21/683

Abstract: Substrate supports comprising a top plate positioned on a shaft are described. The top plate including a primary heating element a first depth from the surface of the top plate, a inner zone heating element a second depth from the surface of the top plate and an outer zone heating element a third depth from the surface of the top plate. Substrate support assemblies comprising a plurality of substrate supports and methods of processing a substrate are also disclosed.

公开(公告)号：WO2021055991A1

公开(公告)日：2021-03-25

申请号：PCT/US2020/051969

申请日：2020-09-22

Applicant: APPLIED MATERIALS, INC.

Inventor： WEAVER, William T. ,  CONSTANT, Andrew J. ,  ASSAF, Shay ,  NEWMAN, Jacob

IPC: H01L21/67 ,  H01L21/677

Abstract: Embodiments of the disclosure are directed to load lock chambers and methods of using load lock chambers. The load lock chambers include a middle section, an upper section connected to the middle section and a lower section connected to the middle section. A slit valve in a facet on the outside of the middle section provides an opening to access the middle volume from outside the load lock.

公开(公告)号：WO2020167744A1

公开(公告)日：2020-08-20

申请号：PCT/US2020/017633

申请日：2020-02-11

Applicant: APPLIED MATERIALS, INC.

Inventor： CHONG, Halbert ,  ZHOU, Lei ,  ALLEN, Adolph Miller ,  SONI, Vaibhav ,  KALATHIPARAMBIL, Kishor ,  FAUNE, Vanessa ,  SUH, Song-Moon

IPC: C23C14/02 ,  C23C14/56 ,  C23C14/22 ,  C23C14/35

Abstract: Physical vapor deposition methods for reducing the particulates deposited on the substrate are disclosed. The pressure during sputtering can be increased to cause agglomeration of the particulates formed in the plasma. The agglomerated particulates can be moved to an outer portion of the process chamber prior to extinguishing the plasma so that the agglomerates fall harmlessly outside of the diameter of the substrate.

公开(公告)号：WO2020047373A1

公开(公告)日：2020-03-05

申请号：PCT/US2019/048992

申请日：2019-08-30

Applicant: APPLIED MATERIALS, INC.

Inventor： AUBUCHON, Joseph

IPC: C23C16/455 ,  C23C16/448

Abstract: A precursor delivery system is described herein. Some embodiments provide a precursor delivery system capable of providing a uniform gas flow comprising precursor into a processing chamber for atomic layer deposition processes. Some embodiments of the precursor delivery system comprise a reservoir with an inlet line, an outlet line and an outlet valve. Further embodiments comprise a precursor source, an inlet valve, a heater, a processing chamber and a controller. Additional embodiments relate to methods for using a precursor delivery system.

公开(公告)号：WO2020023853A1

公开(公告)日：2020-01-30

申请号：PCT/US2019/043624

申请日：2019-07-26

Applicant: APPLIED MATERIALS, INC.

Inventor： SHAH, Vivek B. ,  HASSAN, Vinayak Vishwanath ,  KUMAR, Bhaskar ,  BALASUBRAMANIAN, Ganesh

IPC: H01J37/32 ,  H01L21/67

Abstract: Apparatus and methods for generating a flow of radicals are provided. An ion blocker is positioned a distance from a faceplate of a remote plasma source. The ion blocker has openings to allow the plasma to flow through. The ion blocker is polarized relative to a showerhead positioned on an opposite side of the ion blocker so that there are substantially no plasma gas ions passing through the showerhead.

公开(公告)号：WO2019210127A1

公开(公告)日：2019-10-31

申请号：PCT/US2019/029282

申请日：2019-04-26

Applicant: APPLIED MATERIALS, INC.

Inventor： RICE, Michael ,  AUBUCHON, Joseph ,  BALUJA, Sanjeev ,  OKADA, Ashley M. ,  FERNANDEZ, Alexander ,  XU, Ming ,  JOSEPHSON, Marcel E. ,  KOSHTI, Sushant Suresh ,  LE, Kenneth ,  BRASHEAR, Kevin

IPC: H01L21/67 ,  H01L21/02

Abstract: Gas distribution apparatus to provide uniform flows of gases from a single source to multiple processing chambers are described. A regulator is positioned at an upstream end of a shared volume having a plurality of downstream ends. A flow controller is positioned at each downstream end of the shared volume, the flow controller comprising an orifice and a fast pulsing valve. Methods of using the gas distribution apparatus and calibrating the flow controllers are also described.

公开(公告)号：WO2019023001A1

公开(公告)日：2019-01-31

申请号：PCT/US2018/042472

申请日：2018-07-17

Applicant: APPLIED MATERIALS, INC.

Inventor： SALY, Mark ,  BHUYAN, Bhaskar Jyoti

IPC: H01L21/02 ,  H01L21/027

Abstract: Methods of selectively depositing a film on a hydroxide terminated surface relative to a hydrogen terminated surface are described. The hydrogen terminated surface is exposed to a nitriding agent to form an amine terminated surface which is exposed to a blocking molecule to form a blocking layer on the surface. A film can then be selectively deposited on the hydroxide terminated surface.

公开(公告)号：WO2019018379A1

公开(公告)日：2019-01-24

申请号：PCT/US2018/042467

申请日：2018-07-17

Applicant: APPLIED MATERIALS, INC.

Inventor： BHUYAN, Bhaskar Jyoti ,  SALY, Mark ,  KALUTARAGE, Lakmal C. ,  KNISLEY, Thomas

IPC: H01L21/02

Abstract: Methods of enhancing selective deposition are described. In some embodiments, a blocking layer is deposited on a metal surface before deposition of a dielectric. In some embodiments, a metal surface is functionalized to enhance or decrease its reactivity.