公开(公告)号：WO2016036792A1

公开(公告)日：2016-03-10

申请号：PCT/US2015/048041

申请日：2015-09-02

Applicant: SUNEDISON SEMICONDUCTOR LIMITED ,  THOMAS, Shawn G.

Inventor： THOMAS, Shawn G. ,  LIU, Qingmin

IPC: H01L21/762

CPC classification number: H01L29/66833 ,  H01L21/283 ,  H01L21/304 ,  H01L21/31 ,  H01L21/324 ,  H01L21/76254 ,  H01L29/0649 ,  H01L29/4916 ,  H01L29/517 ,  H01L29/518 ,  H01L29/792

Abstract: A multilayer composite structure and a method of preparing a multilayer composite structure are provided. The multilayer composite structure comprises a semiconductor handle substrate having a minimum bulk region resistivity of at least about 500 ohm-cm; a silicon dioxide layer on the surface of the semiconductor handle substrate; a carbon-doped amorphous silicon layer in contact with the silicon dioxide layer; a dielectric layer in contact with the carbon-doped amorphous silicon layer; and a semiconductor device layer in contact with the dielectric layer.

Abstract translation: 提供了一种多层复合结构体及其制备方法。 多层复合结构包括具有至少约500欧姆 - 厘米的最小体积电阻率的半导体处理衬底; 在半导体手柄基板的表面上的二氧化硅层; 与二氧化硅层接触的碳掺杂非晶硅层; 与所述碳掺杂非晶硅层接触的介电层; 以及与电介质层接触的半导体器件层。

公开(公告)号：WO2014046895A1

公开(公告)日：2014-03-27

申请号：PCT/US2013/058747

申请日：2013-09-09

Applicant: ABENGOA BIOENERGY NEW TECHNOLOGIES, LLC

Inventor： NGUYEN, Quang A. ,  HOLMES, Leroy D. ,  SCHELERT, James F. ,  BORCHERS, Mark A.

IPC: D21C7/08 ,  D21C7/10 ,  D21C11/00 ,  D21C5/00

CPC classification number: C12P19/14 ,  D21C5/005 ,  D21C7/08 ,  D21C7/10 ,  D21C11/0007

Abstract: Methods for producing ethanol from cellulosic biomass and, in particular, methods for conditioning pretreated biomass are disclosed. In some embodiments, pretreated biomass is contacted with a cooling fluid in a flash vessel to cool the biomass. The amount of alkaline solution contacted with the biomass may be based on the pH of partially hydrolyzed pretreated biomass in a liquefaction bioreactor.

Abstract translation: 公开了从纤维素生物质生产乙醇的方法，特别是用于调节预处理的生物质的方法。 在一些实施方案中，预处理的生物质与闪蒸容器中的冷却流体接触以冷却生物质。 与生物质接触的碱性溶液的量可以基于液化生物反应器中部分水解的预处理生物质的pH。

公开(公告)号：WO2012167104A4

公开(公告)日：2012-12-06

申请号：PCT/US2012/040492

申请日：2012-06-01

Applicant: MEMC SINGAPORE PTE, LTD. ,  FALSTER, Robert J. ,  VORONKOV, Vladimir V.

Inventor： FALSTER, Robert J. ,  VORONKOV, Vladimir V.

IPC: H01L31/18

Abstract: Processes for suppressing minority carrier lifetime degradation in silicon wafers are disclosed. The processes involve quench cooling the wafers to increase the density of nano-precipitates in the silicon wafers and the rate at which interstitial atoms are consumed by the nano-precipitates.

公开(公告)号：WO2008083068A1

公开(公告)日：2008-07-10

申请号：PCT/US2007/088530

申请日：2007-12-21

Applicant: MEMC ELECTRONIC MATERIALS, INC. ,  SEACRIST, Michael R ,  FEI, Lu

Inventor： SEACRIST, Michael R ,  FEI, Lu

IPC: H01L21/762

CPC classification number: H01L21/30604 ,  H01L21/76254

Abstract: This invention generally relates to a strained silicon on insulator (SSOI) structure, and to a process for making the same. The process includes forming a thin SiO2 layer on a strained silicon layer after it is formed on the donor wafer and before bonding to the handle wafer.

Abstract translation: 本发明一般涉及应变绝缘硅（SSOI）结构及其制造方法。 该方法包括在应变硅层上形成薄的SiO 2层，其在施主晶片上形成之后并且在结合到处理晶片之前。

公开(公告)号：WO2022103416A1

公开(公告)日：2022-05-19

申请号：PCT/US2020/067382

申请日：2020-12-29

Applicant: GLOBALWAFERS CO., LTD.

Inventor： PHILLIPS, Richard Joseph ,  ZEPEDA, Salvador

IPC: C30B15/02 ,  C30B15/10 ,  C30B29/06

Abstract: Methods for forming a single crystal silicon ingot with reduced crucible erosion are disclosed. Solid-phase quartz is added to the melt to reduce erosion at the crucible-melt surface interface. The quartz may be synthetic quartz such as synthetic quartz rods. The quartz may be disposed near the crucible-melt surface interface. Quartz dissolves and suppresses the amount of quartz that dissolves from the crucible at the crucible-melt surface interface.

公开(公告)号：WO2022103391A1

公开(公告)日：2022-05-19

申请号：PCT/US2020/060097

申请日：2020-11-12

Applicant: GLOBALWAFERS CO., LTD.

Inventor： BHAGAVAT, Sumeet S. ,  DAGGOLU, Parthiv ,  MEYER, Benjamin Michael ,  RYU, JaeWoo

IPC: C30B15/14 ,  C30B29/06

Abstract: Ingot puller apparatus having a heat shield disposed below a side heater and methods for preparing an ingot in such ingot puller apparatus are disclosed. In some embodiments, the side heater is relatively short. The side heater may be fully above a floor of the crucible when the crucible is in its lowest position in the ingot puller.

公开(公告)号：WO2022020684A1

公开(公告)日：2022-01-27

申请号：PCT/US2021/042908

申请日：2021-07-23

Applicant: GLOBALWAFERS CO., LTD.

Inventor： RYU, JaeWoo ,  HUDSON, Carissima Marie ,  JI, JunHwan ,  YOON, WooJin

IPC: C30B15/20 ,  C30B15/30 ,  C30B29/06 ,  C30B30/04

Abstract: Methods for producing monocrystalline silicon ingots by horizontal magnetic field Czochralski are disclosed. During growth of the neck and/or growth of at least a portion of the crown, a magnetic field is not applied to the neck and/or crown or a relatively weak magnetic field of 1500 gauss or less is applied. A horizontal magnetic field (e.g., greater than 1500 gauss) is applied during growth of the ingot main body.

公开(公告)号：WO2021119267A1

公开(公告)日：2021-06-17

申请号：PCT/US2020/064231

申请日：2020-12-10

Applicant: GLOBALWAFERS CO., LTD.

Inventor： RYU, JaeWoo ,  JI, JunHwan ,  YOON, WooJin ,  PHILLIPS, Richard ,  HUDSON, Carissima Marie

IPC: C30B15/10 ,  C30B15/30 ,  C30B29/06 ,  C30B30/04

Abstract: A method for producing a silicon ingot by the horizontal magnetic field Czochralski method includes rotating a crucible containing a silicon melt, applying a horizontal magnetic field to the crucible, contacting the silicon melt with a seed crystal, and withdrawing the seed crystal from the silicon melt while rotating the crucible to form a silicon ingot. The crucible has a wettable surface with a cristobalite layer formed thereon.

公开(公告)号：WO2021118818A1

公开(公告)日：2021-06-17

申请号：PCT/US2020/062578

申请日：2020-11-30

Applicant: GLOBALWAFERS CO., LTD.

Inventor： LOTTES, Charles R. ,  THOMAS, Shawn George ,  ERK, Henry Frank

IPC: H01L21/311 ,  H01L21/762

Abstract: Methods for removing an oxide film from a silicon-on-insulator structure are disclosed. The oxide may be stripped from a SOI structure before deposition of an epitaxial silicon thickening layer. The oxide film may be removed by dispensing an etching solution toward a center region of the SOI structure and dispensing an etching solution to an edge region of the structure.

公开(公告)号：WO2020014007A1

公开(公告)日：2020-01-16

申请号：PCT/US2019/039714

申请日：2019-06-28

Applicant: GLOBALWAFERS CO., LTD.

Inventor： STANDLEY, Robert W. ,  LIBBERT, Jeffrey L. ,  SREEDHARAMURTHY, Hariprasad ,  JENSEN, Leif ,  SEACRIST, Michael R.

IPC: H01L21/762 ,  H01L21/02

Abstract: A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.