公开(公告)号：WO2023278168A1

公开(公告)日：2023-01-05

申请号：PCT/US2022/033835

申请日：2022-06-16

Applicant: APPLIED MATERIALS, INC.

Inventor： BAGAL, Abhijeet S. ,  FU, Qian ,  LIU, Kuan-Ting ,  LIU, Chung

IPC: H01L21/02 ,  H01L21/311 ,  C23C16/26 ,  C23C16/04 ,  C23C16/505 ,  H01J37/32 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0337 ,  H01L21/2636 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/67

Abstract: Semiconductor processing methods are described that include providing a substrate to a reaction chamber, where the substrate includes substrate trenches that have a top surface and a bottom surface. A deposition gas that includes a carbon-containing gas and a nitrogen-containing gas flows into a plasma excitation region of the reaction chamber. A deposition plasma having an electron temperature less than or about 4 eV is generated from the deposition gas. The methods further include depositing a carbon-containing layer on the top surface and the bottom surface of the substrate trenches, where the as-deposited carbon-containing layer has a top surface-to-bottom surface thickness ratio of greater than or about 3:1. Also described are semiconductor structures that include an as-deposited carbon-containing layer on the top and bottom surface of at least a first and second trench, where the carbon-containing layer has a top surface-to-bottom surface thickness ratio of greater than or about 3:1.

公开(公告)号：WO2023272951A1

公开(公告)日：2023-01-05

申请号：PCT/CN2021/118694

申请日：2021-09-16

Applicant: 长鑫存储技术有限公司

Inventor： 杨蒙蒙 ,  王晓玲

IPC: H01L21/28 ,  H01L29/51 ,  C23C16/50 ,  C23C16/455 ,  C23C16/44 ,  C23C16/45536 ,  H01J37/36 ,  H01L21/0217 ,  H01L21/02274

Abstract: 本申请公开了一种薄膜沉积方法及半导体器件。本申请中的薄膜沉积方法包括：提供基底；采用薄膜沉积技术在基底上进行薄膜沉积形成第一沉积层；通入清除气体，对第一沉积层进行清除杂质处理，形成净化沉积层；由净化沉积层形成薄膜层。本申请中的薄膜沉积方法采用薄膜沉积技术形成沉积层，并对沉积层进行杂质处理，使形成的薄膜层的杂质含量大大降低。将该薄膜层覆盖在栅极表面制备成半导体器件，可以更好得保护栅极，显著提高半导体器件的寿命。

公开(公告)号：WO2022008690A1

公开(公告)日：2022-01-13

申请号：PCT/EP2021/069075

申请日：2021-07-08

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE ,  UNIVERSITE GRENOBLE ALPES

Inventor： LEGALLAIS, Maxime ,  SALEM, Bassem ,  BARON, Thierry ,  GWOZIECKI, Romain ,  PLISSONNIER, Marc

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28264 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/513 ,  H01L29/517 ,  H01L29/778 ,  H01L29/94

Abstract: L'invention concerne un procédé de réalisation, sur une structure (70) à base d'un matériau lll-V, d'une couche diélectrique (71), le procédé comprenant les séquences suivantes effectuées : • - réaliser un premier film diélectrique (71A) par ALD en effectuant une pluralité de premiers cycles (IA) comprenant chacun au moins: • •une injection (10A) dans la chambre de réaction (210) d'un précurseur à base d'un premier matériau, • • une injection (30A) dans la chambre de réaction (210) d'un précurseur à base d'eau (H 2O) ou d'ozone (0 3), • - réaliser, sur le premier film diélectrique (71A), un deuxième film diélectrique (71 B) par ALD assisté par plasma en effectuant une pluralité de deuxièmes cycles (1 B) comprenant chacun au moins : • • une injection (10B) dans la chambre de réaction (210) d'un précurseur à base d'un deuxième matériau, • • une injection (30B) dans la chambre de réaction (210) d'un précurseur à base d'oxygène (O) ou d'azote (N).

公开(公告)号：WO2021247592A1

公开(公告)日：2021-12-09

申请号：PCT/US2021/035269

申请日：2021-06-01

Applicant: LAM RESEARCH CORPORATION

Inventor： GUPTA, Awnish ,  CURTIN, Ian John ,  AGNEW, Douglas Walter ,  PASQUALE, Frank Loren ,  JEON, Eli ,  LAVOIE, Adrien

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  C23C16/52 ,  C23C16/401 ,  C23C16/45544 ,  C23C16/45557 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/67

Abstract: Various embodiments herein relate to methods and apparatus for depositing silicon oxide using thermal ALD or thermal CVD. In one aspect of the disclosed embodiments, a method for depositing silicon oxide is provided, the method including: (a) receiving the substrate in a reaction chamber; (b) introducing a first flow of a first reactant into the reaction chamber and exposing the substrate to the first reactant, where the first reactant includes a silicon-containing reactant; (c) introducing a second flow of a second reactant into the reaction chamber to cause a reaction between the first reactant and the second reactant, (i) where the second reactant includes hydrogen (H2) and an oxygen-containing reactant, (ii) where the reaction deposits silicon oxide on the substrate, and (iii) where the reaction is initiated when a pressure in the reaction chamber is greater than 10 Torr and equal to or less than about 40 Torr.

公开(公告)号：WO2021127464A1

公开(公告)日：2021-06-24

申请号：PCT/US2020/066050

申请日：2020-12-18

Applicant: L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE ,  AMERICAN AIR LIQUIDE, INC.

Inventor： NODA, Naoto ,  OSHCHEPKOV, Ivan ,  GIRARD, Jean-Marc

IPC: H01L21/31 ,  H01L21/318 ,  C23C16/308 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02208 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0337

Abstract: Disclosed is a method for forming Si-containing films, such as SiN film, by PEALD using trisilylamine (TSA) at ultralow temperature, such as a temperature below 250°C.

公开(公告)号：WO2023278389A1

公开(公告)日：2023-01-05

申请号：PCT/US2022/035237

申请日：2022-06-28

Applicant: APPLIED MATERIALS, INC.

Inventor： DAS, Chandan ,  ROY, Susmit Singha ,  BHUYAN, Bhaskar Jyoti ,  SUDIJONO, John ,  MALLICK, Abhijit Basu ,  SALY, Mark

IPC: C23C16/30 ,  C23C16/455 ,  C23C16/56 ,  C23C16/40 ,  C23C16/04 ,  C23C16/06 ,  C23C16/305 ,  C23C16/4485 ,  H01L21/02175 ,  H01L21/02186 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02356 ,  H01L21/02568

Abstract: Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a precursor and a chalcogenide reactant to form the transition metal dichalcogenide film. The exposures can be sequential or simultaneous.

公开(公告)号：WO2022005728A1

公开(公告)日：2022-01-06

申请号：PCT/US2021/037177

申请日：2021-06-14

Applicant: APPLIED MATERIALS, INC.

Inventor： XIE, Bo ,  YIM, Kang S. ,  LIU, Yijun ,  XIA, Li-Qun ,  XIONG, Ruitong

IPC: C23C16/30 ,  C23C16/32 ,  C23C16/505 ,  H01L21/02 ,  C23C16/325 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02205 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274

Abstract: Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-oxygen-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency less than 15 MHz (e.g., 13.56 MHz). The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.5 and a hardness greater than about 3 Gpa.

公开(公告)号：WO2022005716A1

公开(公告)日：2022-01-06

申请号：PCT/US2021/036547

申请日：2021-06-09

Applicant: APPLIED MATERIALS, INC.

Inventor： GAO, Larry ,  FUNG, Nancy

IPC: H01L21/033 ,  H01L21/311 ,  C23C16/042 ,  C23C16/26 ,  C23C16/56 ,  G03F7/0042 ,  G03F7/16 ,  G03F7/2002 ,  G03F7/26 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0273 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831

Abstract: Embodiments disclosed within include a method for etching a hardmask layer includes forming a photoresist layer comprising an organometallic material on a hardmask layer comprising a metal-containing material, exposing the photoresist layer to ultraviolet radiation through a mask having a selected pattern, removing unirradiated areas of the photoresist layer to pattern the photoresist layer, forming a passivation layer comprising a carbon-containing material selectively on a top surface of the patterned photoresist layer, including selectively depositing passivation material over a top surface of a patterned photoresist layer trimming undesired portions of the passivation material, and etching the hardmask layer exposed by the patterned photoresist layer having the passivation layer formed thereon.

公开(公告)号：WO2021258149A1

公开(公告)日：2021-12-30

申请号：PCT/AU2021/050661

申请日：2021-06-24

Applicant: NORSELD PTY LTD

Inventor： FRANCOIS, Alexandre ,  HOLMES, Nathan

IPC: C23C14/28 ,  C23C14/54 ,  G02B26/08 ,  H01L21/02274 ,  H01S3/0007 ,  H01S3/10061 ,  H05H1/46

Abstract: A thin film deposition apparatus comprising: a laser pulse generator to generate a laser pulse; optical elements to optionally P-polarize and optionally rotate the laser pulse polarization with a polarization angle φ based on the cavity chamber and deposition material; focusing optics to focus the laser pulse; a source of deposition material having refractive index n2; said deposition material mounted within an evacuated chamber having a refractive index m; a rotation and / or translation device to alter and / or direct said laser pulse onto said source of deposition material at an incidence angle Θ to produce a plasma to be deposited on a substrate; wherein the polarization angle φ and incidence angle Θ are defined by the area under the graphical representation of the ellipse of equation (I) where θ0=0.8× arctan (n2/n1) ψ0=0, a=0.4x arctan (n2/n1) and b=0.5x arctan (n2/n1).

公开(公告)号：WO2021202315A1

公开(公告)日：2021-10-07

申请号：PCT/US2021/024510

申请日：2021-03-26

Applicant: ENTEGRIS, INC.

Inventor： LEE, SangJin ,  KIM, DaHye ,  CHO, Sungsil ,  CHANG, Seobong ,  PARK, Jae Eon ,  HENDRIX, Bryan C. ,  BAUM, Thomas H. ,  LEE, SooJin

IPC: C07F7/10 ,  C23C16/40 ,  C23C16/34 ,  C23C16/455 ,  C07F7/025 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45536 ,  C23C16/45553 ,  C23C16/50 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228

Abstract: Provided are certain liquid silicon precursors useful for the deposition of silicon-containing films, such as films comprising silicon, silicon nitride, silicon oxynitride, silicon dioxide, silicon carbide, carbon-doped silicon nitride, or carbon-doped silicon oxynitride. Also provided are methods for forming such films utilizing vapor deposition techniques.