MICROFLUIDIC ROUTING
    31.
    发明申请

    公开(公告)号:WO2019122092A1

    公开(公告)日:2019-06-27

    申请号:PCT/EP2018/086135

    申请日:2018-12-20

    Applicant: IMEC VZW

    Abstract: A microfluidic routing device (1) for routing objects of interest (2) in a microfluidic flow, the device comprising a substrate (3); a first layer (4) provided on the substrate (3), in which the first layer (4) forms a bottom wall of a microfluidic channel (6), wherein at least two holes through the first layer (4) form respectively an inlet (11) and an outlet (12) for the microfluidic channel (6); a second layer (7) spaced away from the first layer (4), in which the second layer (7) forms a top wall of the microfluidic channel (6), wherein said second layer (7) is adapted for transmitting an optical signal from the microfluidic channel (6). The device comprises an actuator (13) for actuating said objects of interest (2) in a sorting junction of the microfluidic channel (6).

    A METHOD FOR MANUFACTURING A FLUID SENSOR DEVICE AND A FLUID SENSOR DEVICE

    公开(公告)号:WO2019121931A1

    公开(公告)日:2019-06-27

    申请号:PCT/EP2018/085864

    申请日:2018-12-19

    Applicant: IMEC VZW

    CPC classification number: G01N27/4145 G01N27/4146 H01L21/76251

    Abstract: According to an aspect of the present inventive concept there is provided a method for manufacturing a fluid sensor device comprising: bonding a silicon-on-insulator arrangement comprising a silicon wafer, a buried oxide, a silicon layer, and a first dielectric layer, to a CMOS arrangement comprising a metallization layer and a planarized dielectric layer, wherein the bonding is performed via the first dielectric layer and the planarized dielectric layer; forming a fin-FET arrangement in the silicon layer, wherein the fin-FET arrangement is configured to function as a fluid sensitive fin-FET arrangement; removing the buried oxide and the silicon wafer; forming a contact to the metallization layer and the fin-FET arrangement, wherein the contact comprises an interconnecting structure configured to interconnect the metallization layer and the fin-FET arrangement; forming a channel comprising an inlet and an outlet, wherein the channel is configured to allow a fluid comprising an analyte to contact the fin-FET arrangement.

    METHODS FOR FORMING METAL ELECTRODES CONCURRENTLY ON SILICON REGIONS OF OPPOSITE POLARITY

    公开(公告)号:WO2018172098A1

    公开(公告)日:2018-09-27

    申请号:PCT/EP2018/055822

    申请日:2018-03-08

    Applicant: IMEC VZW

    Inventor: RUSSELL, Richard

    Abstract: A method for concurrently forming a first metal electrode (31, 58) on an n-type region of a silicon substrate (10) and a second metal electrode (32, 59) on a p-type region of the silicon substrate, wherein the n-type region and the p-type region are respectively exposed in a first and in a second area, is disclosed. The method comprises: depositing (101) an initial metal layer comprising Ni (33, 53) simultaneously in the first area and in the second area by a Ni immersion plating process using a plating solution; and depositing (102) a further metal layer (34, 54) on the initial metal layer comprising Ni (33, 53) in the first area and in the second area by an electroless metal plating process or by an immersion metal plating process, wherein the plating solution comprises Ni and a predetermined amount of another metal different from Ni.

    JET FLOW POWER CONTROL FOR OBJECT SORTING
    34.
    发明申请

    公开(公告)号:WO2018122215A1

    公开(公告)日:2018-07-05

    申请号:PCT/EP2017/084579

    申请日:2017-12-26

    Abstract: A microfluidic actuator (100) for selecting objects in a fluid stream comprising a plurality of objects is described. The actuator (100) comprises an object detection means (101) adapted for, upon arrival of an object, identifying whether an object is an object of interest. It further comprises a heater (113) adapted for generating a jet flow for deflecting an object of interest from the fluid stream and a controller (104) for activating the heater (113) as function of the detection of an object of interest using a nucleation signal. The controller (104) is adapted for obtaining temperature information of the heater (113) and for adjusting a nucleation signal for the heater (113) taking into account the obtained temperature information.

    COMBINED EXTRACTION AND PCR SYSTEMS
    35.
    发明申请

    公开(公告)号:WO2018115040A1

    公开(公告)日:2018-06-28

    申请号:PCT/EP2017/083681

    申请日:2017-12-20

    Applicant: IMEC VZW

    Abstract: A method for analyzing a fluid sample, the method comprising obtaining (710) the fluid sample in at least one cavity of a substrate and introducing also buffers and/or reagents in said cavity, performing (720) nucleic acid extraction and/or purification in said cavity, and performing (730) nucleic acid amplification in the same cavity. A corresponding system also is claimed.

    AN INTEGRATED LENS FREE IMAGING DEVICE
    36.
    发明申请
    AN INTEGRATED LENS FREE IMAGING DEVICE 审中-公开
    一个集成的镜头免费的成像设备

    公开(公告)号:WO2018015517A1

    公开(公告)日:2018-01-25

    申请号:PCT/EP2017/068430

    申请日:2017-07-20

    Applicant: IMEC VZW

    Abstract: A lens free imaging device (100) for imaging a sample. The device (100) comprises a radiation guiding structure (110) in a chip (100) and an imaging region (120). The radiation guiding structure (110) is adapted for receiving an incoming radiation wave (101) thus obtaining a confined radiation wave (112) in the radiation guiding structure and for generating therefrom a first radiation wave (114) and a second radiation wave (116). The first wave (114) is directed out of the chip (100) to a sample measurement region for allowing interaction with the sample (130) and the second wave (116) is directed towards the imaging region (120). A scattered first radiation wave (118), scattered by the sample (130), is at least partly captured in the imaging region (130) and can be combined with the second radiation wave (114) captured in the imaging region (120) for forming an image.

    Abstract translation: 一种用于对样品进行成像的无镜头成像装置(100)。 装置(100)包括芯片(100)中的辐射引导结构(110)和成像区域(120)。 所述辐射引导结构(110)适于接收入射辐射波(101),从而在所述辐射引导结构中获得受限辐射波(112)并由此产生第一辐射波(114)和第二辐射波(116) )。 第一波(114)从芯片(100)引出到用于允许与样品(130)相互作用的样品测量区域,并且第二波(116)指向成像区域(120)。 由样本(130)散射的散射的第一辐射波(118)至少部分地捕获在成像区域(130)中并且可以与成像区域(120)中捕获的第二辐射波(114)组合,以用于 形成一个图像。

    A WAVEGUIDE ARRANGEMENT
    37.
    发明申请
    A WAVEGUIDE ARRANGEMENT 审中-公开
    一个波导安排

    公开(公告)号:WO2017198314A1

    公开(公告)日:2017-11-23

    申请号:PCT/EP2016/061452

    申请日:2016-05-20

    Applicant: IMEC VZW

    Inventor: OCKET, Ilja

    Abstract: A waveguide arrangement (1) for coupling a plurality of modules (5) to a source. The waveguide arrangement (1) comprises a continuous waveguide (10) configured for guiding a signal provided by the source and a plurality of interfaces (15), each interface (15) being associated with one of the plurality of modules (5) and being configured for transferring a part of the source signal guided in the waveguide (10) to its associated module (5). The continuous waveguide (10) allows the source signal to propagate continuously without needing reconversion at each module (5). As such, the waveguide arrangement (1) loses less power and is more efficient. Moreover, each module (5) receives the exact same input signal which improves the coherence between the modules (5).

    Abstract translation: 一种用于将多个模块(5)耦合到源的波导装置(1)。 波导装置(1)包括被配置用于引导由源和多个接口(15)提供的信号的连续波导(10),每个接口(15)与多个模块(5)中的一个相关联, 被配置用于将在所述波导(10)中引导的所述源信号的一部分传递到其相关联的模块(5)。 连续波导(10)允许源信号在每个模块(5)不需要再转换的情况下连续传播。 如此,波导装置(1)失去较少的功率并且更高效。 此外,每个模块(5)接收完全相同的输入信号,这提高了模块(5)之间的一致性。

    METHOD FOR PROVIDING A TUNGSTEN LAYER
    38.
    发明申请
    METHOD FOR PROVIDING A TUNGSTEN LAYER 审中-公开
    提供钨层的方法

    公开(公告)号:WO2017153194A1

    公开(公告)日:2017-09-14

    申请号:PCT/EP2017/054490

    申请日:2017-02-27

    Applicant: IMEC VZW

    Abstract: The present invention discloses a method for providing a tungsten layer on a substrate surface (101) and thereafter covering the as-formed tungsten layer (103) with a planarized material (107) having an etch rate similar to the etch rate of tungsten (103); and thereafter etching the planarized material (107) and top part of the as-formed tungsten layer (103) until all the planarized material (107) is removed.

    Abstract translation: 本发明公开了一种用于在衬底表面(101)上提供钨层并随后用具有类似蚀刻速率的平坦化材料(107)覆盖所形成的钨层(103)的方法 到钨(103)的蚀刻速率; 然后蚀刻平整的材料(107)和形成的钨层(103)的顶部,直到所有的平面化材料(107)被除去。

    SENSOR DEVICE
    40.
    发明申请
    SENSOR DEVICE 审中-公开
    传感器设备

    公开(公告)号:WO2017001642A1

    公开(公告)日:2017-01-05

    申请号:PCT/EP2016/065449

    申请日:2016-06-30

    Applicant: IMEC VZW

    CPC classification number: G01N33/54393 C12Q1/002 C12Q1/6825 G01N33/523

    Abstract: A device (1) for sensing an analyte, the device (1) comprises at least a sample inlet (10) for receiving a sample, affinity probes (111) selected to have a preferential binding to the analyte, a transducer (11) sensitive to a characteristic of the analyte and/or a label attached to the analyte, the transducer not being a FET transducer, and a desalting unit (13) for desalting the received sample.

    Abstract translation: 一种用于感测分析物的装置(1),所述装置(1)至少包括用于接收样品的样品入口(10),被选择为具有优先结合分析物的亲和探针(111),敏感器(11) 涉及分析物和/或附着于分析物的标签的特性,换能器不是FET换能器,以及用于对接收到的样品进行脱盐的脱盐单元(13)。

Patent Agency Ranking