公开(公告)号：WO2020066575A1

公开(公告)日：2020-04-02

申请号：PCT/JP2019/035415

申请日：2019-09-09

Applicant: 信越化学工業株式会社

Inventor： 橋上　洋

IPC: H01L21/365 ,  H01L21/338 ,  H01L21/368 ,  H01L29/12 ,  H01L29/24 ,  H01L29/739 ,  H01L29/778 ,  H01L29/78 ,  H01L29/812 ,  H01L29/872 ,  H01L33/12 ,  H01L33/26

Abstract: 本発明は、結晶基板と該結晶基板の主表面上に形成された、第１金属酸化物を主成分としコランダム構造からなる結晶相の結晶領域と、アモルファス相のアモルファス領域とが混在した中間層と、該中間層上に形成された、第２金属酸化物を主成分としコランダム構造の結晶層とを有する積層体である。これにより、結晶欠陥が十分に抑制された高品質なコランダム構造の結晶を有する積層体が提供される。

公开(公告)号：WO2019173945A1

公开(公告)日：2019-09-19

申请号：PCT/CN2018/078711

申请日：2018-03-12

Applicant: 中国科学院半导体研究所

Inventor： 骆军委 ,  袁林丁 ,  李树深

IPC: H01L33/26

Abstract: 一种实现兼容CMOS工艺的直接带隙发光的硅基材料及其制备方法，该方法包括步骤：准备硅基材料，所述硅基材料为锗材料或者硅锗合金；在所述硅基材料的部分晶格间隙位置填入惰性气体原子和/或原子序数小的原子达到晶格体积膨胀，以实现其能带结构由间接带隙向直接带隙转变，得到直接带隙发光的硅基材料。此外，还提供了一种发光硅基器件。该制备方法兼容CMOS集成电路工艺，实现锗及硅锗合金材料的直接带隙发光，其发光效率比肩InP和GaAs等III-V族直接带隙材料，为实现硅基或锗基光电子集成技术所需的片上光源提供了一种全新的解决方案。

公开(公告)号：WO2018205741A1

公开(公告)日：2018-11-15

申请号：PCT/CN2018/079009

申请日：2018-03-14

Applicant: TCL集团股份有限公司

Inventor： 杨成玉 ,  杨一行

IPC: H01L33/56 ,  H01L33/48 ,  H01L33/26

Abstract: 一种量子点发光二极管及其制备方法。该量子点发光二极管包括依次设置的衬底、底电极、发光功能层以及顶电极，底电极、发光功能层以及顶电极构成的功能层的外表面设置有第一保护层，该第一保护层由含氟丙烯酸酯共聚物制成，具有疏水性，良好的透光性、柔韧性以及散热性，可有效阻止水分和氧气渗透进入量子点发光二极管内部结构，起到良好的保护效果，同时量子点发光二极管工作时可及时散热，有利于器件更好发挥自身性能，提高发光效率和使用寿命。

公开(公告)号：WO2018170531A1

公开(公告)日：2018-09-27

申请号：PCT/AU2018/000040

申请日：2018-03-21

Applicant: NEWSOUTH INNOVATIONS PTY LTD

Inventor： SUIXIANQ LI, Sean ,  PHAM, Anh

IPC: H01L33/26 ,  H01L31/0256 ,  H01L33/02

Abstract: The present disclosure relates to a solid-state light emitting device, a solid state light absorbing device and methods for fabricating the same. In particular, the present disclosure relates to a light emitting device comprising: a transition metal dichalcolgenide layer disposed between two layers of a material with a bandgap larger than the transition metal dichalcolgenide layer; a plurality of nanoparticles embedded into the transition metal dichalcolgenide layer and being arranged to form a plurality of allowable energy levels within the bandgap of the transition metal dichalcolgenide layer; and electrodes arranged to apply a voltage across the two layers and the transition metal dichalcolgenide layer, wherein, when a voltage within a predetermined range is applied to the electrodes, photons with a wavelength within a specific wavelength range are emitted by the device and the wavelength range can be varied by varying the voltage across the two layers and the transition metal dichalcolgenide layer.

公开(公告)号：WO2018117699A1

公开(公告)日：2018-06-28

申请号：PCT/KR2017015267

申请日：2017-12-21

Applicant: LG INNOTEK CO LTD

Inventor： SEO JAE WON

IPC: H01L33/62 ,  H01L33/26 ,  H01L33/38 ,  H01L33/40

Abstract: A semiconductor device according to an embodiment may comprise: a substrate; a first and a second light-emitting structure disposed on the substrate; a first reflective electrode disposed on the first light-emitting structure and a second reflective electrode disposed on the second light-emitting structure; a connection electrode; a first electrode pad; and a second electrode pad. According to an embodiment, the first light-emitting structure may comprise: a first semiconductor layer of first conductive type; a first active layer disposed on the first semiconductor layer; a second semiconductor layer of second conductive type disposed on the first active layer; and a first through-hole extending through the second semiconductor layer and the first active layer and exposing the first semiconductor layer. The second light-emitting structure is spaced apart from the first light-emitting structure and may comprise: a third semiconductor layer of first conductive type; a second active layer disposed on the third semiconductor layer; and a fourth semiconductor layer of second conductive type disposed on the second active layer.

公开(公告)号：WO2017223255A4

公开(公告)日：2017-12-28

申请号：PCT/US2017/038625

申请日：2017-06-21

Applicant: SORAA, INC.

Inventor： HUANG, Kevin ,  DAVID, Aurelien J.F. ,  EBERLE, Stefan ,  MODI, Rohit ,  WEST, Scott ,  CHICH, Michael J. ,  ALDAZ, Rafael I. ,  CRAVEN, Michael D.

IPC: H01L33/10 ,  F21K9/62 ,  F21V7/00 ,  H01L33/02 ,  H01L33/26 ,  H01L33/44 ,  H01L33/46

Abstract: In one embodiment, the LED package comprises: (a) a submount comprising a substrate, at least one electrical interface, and a non-conductive reflective material disposed over substantially all of submount except for the at least one electrical interface; and (b) an LED chip having sides and at least one contact, the LED chip being flip-chip mounted to the submount such that the at least one contact is electrically connected to the at least one electrical interface, the LED chip covering a substantial portion of the at least one electrical interface, substantially all of the chip extending above the reflective material.

公开(公告)号：WO2017131361A3

公开(公告)日：2017-08-03

申请号：PCT/KR2017/000292

申请日：2017-01-09

Applicant: 주식회사 효성

Inventor： 고다현 ,  임서영 ,  김영식 ,  류정곤

IPC: H01L33/50 ,  H01L33/52 ,  H01L33/26 ,  H01L33/56

Abstract: 본 발명은 희토류 금속 산화물 입자를 포함하는 적외선 LED 패키지에 관한 것으로서, 보다 상세히는, 적외선 LED 칩 및 고분자 수지 내에 하기 화학식 1로 표현되는 화합물을 포함하는 LED 봉지재를 구비하여 700~940 nm의 적외선 파장을 갖는 적외선 LED 패키지. [화학식 1] M a (OH) b (CO 3 ) c O d 여기서, M은 Sc, Y, La, Al, Lu, Ga, Zn, V, Zr, Ca, Sr, Ba, Sn, Mn, Bi 또는 Ac이고, a는 1 또는 2, b는 0 내지 2, c는 0 내지 3, d는 0 내지 3이다. 다만, b, c, 및 d는 동시에 0이 아니고, b 및 c는 동시에 0이거나, 동시에 0이 아니다.

公开(公告)号：WO2017117151A1

公开(公告)日：2017-07-06

申请号：PCT/US2016/068761

申请日：2016-12-27

Applicant: LIGHT SHARE, LLC

Inventor： YOO, Myung, Cheol

IPC: H01L27/15 ,  H01L33/04 ,  H01L33/06 ,  H01L33/08 ,  H01L33/10 ,  H01L33/12 ,  H01L33/14 ,  H01L33/26 ,  H01L33/22 ,  H01L33/32 ,  H01L33/50

CPC classification number: H01L33/46 ,  H01L33/0066 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/325 ,  H01L33/62 ,  H01L2933/0025 ,  H01L2933/0066

Abstract: Residual internal stress within optoelectronic devices such as light-emitting diodes and laser diodes is reduced to improve internal quantum efficiency and thereby increase light output.

Abstract translation: 在光电子器件如发光二极管和激光二极管内的残余内部应力减小，以提高内部量子效率并由此增加光输出。

公开(公告)号：WO2016035696A1

公开(公告)日：2016-03-10

申请号：PCT/JP2015/074380

申请日：2015-08-28

Applicant: 株式会社FLOSFIA

Inventor： 織田　真也 ,  高塚　章夫 ,  人羅　俊実

IPC: H01L21/365 ,  H01L21/20 ,  H01L21/28 ,  H01L21/329 ,  H01L21/336 ,  H01L21/337 ,  H01L21/338 ,  H01L29/12 ,  H01L29/24 ,  H01L29/47 ,  H01L29/739 ,  H01L29/778 ,  H01L29/78 ,  H01L29/808 ,  H01L29/812 ,  H01L29/872 ,  H01L33/16 ,  H01L33/26

CPC classification number: H01L21/02565 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/242 ,  H01L29/04 ,  H01L29/045 ,  H01L29/0619 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7395 ,  H01L29/7786 ,  H01L29/78 ,  H01L29/8083 ,  H01L29/812 ,  H01L29/872 ,  H01L29/8725 ,  H01L33/42

Abstract: 　結晶性に優れた積層構造体および移動度が良好な前記積層構造体の半導体装置を提供する。コランダム構造を有する結晶基板上に、直接または別の層を介して、コランダム構造を有する結晶性酸化物を主成分として含む結晶膜が積層されている積層構造体であって、前記結晶基板が０．２°～１２．０°のオフ角を有しており、前記結晶性酸化物が、インジウム、アルミニウムおよびガリウムから選ばれる１種または２種以上の金属を含むことを特徴とする積層構造体。

Abstract translation: 提供具有优异结晶性的层叠结构，以及具有上述层压结构并具有良好迁移率的半导体器件。 叠层结构体是通过在具有刚玉结构的结晶性基材上层叠作为主要成分的具有刚玉结构的结晶性氧化物的结晶性膜，将结晶性膜直接层叠在基材上，或层叠在 具有介于其间的另一层的衬底。 层叠结构的特征在于，结晶性基板的偏离角为0.2°〜12.0°，结晶性氧化物包含选自铟，铝，镓的一种以上的金属。

公开(公告)号：WO2016027450A1

公开(公告)日：2016-02-25

申请号：PCT/JP2015/004078

申请日：2015-08-17

Applicant: OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL CORPORATION

Inventor： QI, Yabing ,  LEYDEN, Matthew Ryan

IPC: C23C16/448 ,  C23C16/46 ,  C30B25/00 ,  C30B31/12 ,  H01L33/26 ,  H01L51/44

CPC classification number: C30B31/16 ,  C23C16/30 ,  C23C16/448 ,  C23C16/52 ,  C30B25/00 ,  C30B25/02 ,  C30B29/12 ,  C30B29/54 ,  C30B31/12 ,  H01G9/2009 ,  H01L33/005 ,  H01L33/26 ,  H01L51/001 ,  H01L51/002 ,  H01L51/4226 ,  H01L51/5012

Abstract: A system and method for fabricating a perovskite film is provided, the system including a housing for use as a CVD furnace having first and second sections coupled with first and second temperature control units, respectively. The first and second sections correspond substantially to the upstream and downstream of gases, respectively. One or more substrates are loaded in the second section and controlled by the second temperature control unit, and an evaporation unit containing an organic halide material is loaded in the first section and controlled by the first temperature control unit. Each of the substrates is pre-deposited with a metal halide material. The inside of the housing is pumped down to a low pressure.

Abstract translation: 提供了一种用于制造钙钛矿膜的系统和方法，该系统包括用作CVD炉的壳体，其具有分别与第一和第二温度控制单元耦合的第一和第二部分。 第一和第二部分分别对应于气体的上游和下游。 一个或多个基板装载在第二部分中并由第二温度控制单元控制，并且含有有机卤化物材料的蒸发单元被装载在第一部分中并由第一温度控制单元控制。 每个基板预先沉积有金属卤化物材料。 将壳体的内部泵送到低压。