公开(公告)号：WO2007061786A1

公开(公告)日：2007-05-31

申请号：PCT/US2006/044563

申请日：2006-11-17

Applicant: CISCO TECHNOLOGY, INC. ,  VADLAKONDA, Sravan ,  NGUYEN, Son, D. ,  BANGALORE, Manjunath, S. ,  KHURANA, Vikram

Inventor： VADLAKONDA, Sravan ,  NGUYEN, Son, D. ,  BANGALORE, Manjunath, S. ,  KHURANA, Vikram

IPC: H04L29/06

CPC classification number: H04L29/06027 ,  H04L47/2416 ,  H04L47/26 ,  H04L65/608 ,  H04L65/80

Abstract: A Real-Time Protocol (RTP) source node of a network operates to send a first data packet of a first size to a destination node over a path of the network that includes a plurality of intermediate nodes, at least one of the intermediate nodes having a maximum transmission unit (MTU) size smaller than the first size such that fragmentation of the first data packet occurs. The destination node sends back to the source node a RTCP report that includes a number of fragments received and a largest minimum data packet size. In response, the source node sends subsequent data packets having a second size less than or equal to the largest data packet size of the fragments. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. 37 CFR 1.72(b).

Abstract translation: 网络的实时协议（RTP）源节点操作以通过包括多个中间节点的网络的路径向目的地节点发送第一大小的第一数据分组，至少一个中间节点具有 小于第一大小的最大传输单元（MTU）大小，使得发生第一数据分组的分段。 目的地节点向源节点发回包含接收到的片段数和最大最小数据包大小的RTCP报告。 作为响应，源节点发送具有小于或等于片段的最大数据分组大小的第二大小的后续数据分组。 要强调的是，该摘要被提供以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开的主题。 提交它的理解是，它不会用于解释或限制权利要求的范围或含义。 37 CFR 1.72（b）。

公开(公告)号：WO2006088881A3

公开(公告)日：2007-01-18

申请号：PCT/US2006005204

申请日：2006-02-14

Applicant: IBM ,  SONY CORP ,  NGUYEN SON V ,  LANE SARAH L ,  LEE JIA ,  IDA KENSAKU ,  RESTAINO DARRYL D ,  NOGAMI TAKESHI

Inventor： NGUYEN SON V ,  LANE SARAH L ,  LEE JIA ,  IDA KENSAKU ,  RESTAINO DARRYL D ,  NOGAMI TAKESHI

IPC: H01L21/31

CPC classification number: H01L21/7682 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02354 ,  H01L21/3122 ,  H01L21/31633 ,  H01L2221/1047

Abstract: A porous low k or ultra low k dielectric film comprising atoms of Si, C, O and H (hereinafter "SiCOH") in a covalently bonded tri-dimensional network structure having a dielectric constant of less than about 3.0, a higher degree of crystalline bonding interactions, more carbon as methyl termination groups and fewer methylene, -CH 2 - crosslinking groups than prior art SiCOH dielectrics is provided. The SiCOH dielectric is characterized as having a FTIR spectrum comprising a peak area for CH 3 +CH 2 stretching of less than about 1.40, a peak area for SiH stretching of less than about 0.20, a peak area for SiCH 3 bonding of greater than about 2.0, and a peak area for Si-O-Si bonding of greater than about 60%, and a porosity of greater than about 20%.

Abstract translation: 在介电常数小于约3.0的共价键合的三维网络结构中，包含Si，C，O和H原子（以下称为“SiCOH”）的多孔低k或超低k电介质膜，结晶度更高 键合相互作用，提供比现有技术的SiCOH电介质更多的碳作为甲基端基和更少的亚甲基-CH 2 - 2交联基团。 SiCOH电介质的特征在于具有小于约1.40的CH 3 N 2 CH 2拉伸峰面积的FTIR光谱，SiH拉伸的峰面积小于 约0.20，SiCH 3键的峰面积大于约2.0，Si-O-Si键合的峰面积大于约60％，孔隙率大于约20％ 。

公开(公告)号：WO2004104698A3

公开(公告)日：2005-04-14

申请号：PCT/US2004015531

申请日：2004-05-18

Applicant: APPLIED MATERIALS INC ,  NGUYEN SON VAN ,  ARMACOST MICHAEL D ,  NAIK MEHUL ,  DIXIT GIRISH A ,  YIEH ELLIE Y

Inventor： NGUYEN SON VAN ,  ARMACOST MICHAEL D ,  NAIK MEHUL ,  DIXIT GIRISH A ,  YIEH ELLIE Y

IPC: G03F20060101 ,  G03F7/09 ,  G03F7/11 ,  H01L21/027 ,  H01L21/311 ,  H01L21/316 ,  H01L21/768

CPC classification number: G03F7/091 ,  G03F7/11 ,  H01L21/0276 ,  H01L21/31144 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76835

Abstract: Methods are provided for depositing a dielectric material for use as an anti-reflective coating and sacrificial dielectric material in damascene formation. In one aspect, a process is provided for processing a substrate including depositing an acidic dielectric layer on the substrate by reacting an oxygen-containing organosilicon compound and an acidic compound, depositing a photoresist material on the acidic dielectric layer, and patterning the photoresist layer. The acidic dielectric layer may be used as a sacrificial layer in forming a feature definition by etching a partial feature definition, depositing the acidic dielectric material, etching the remainder of the feature definition, and then removing the acidic dielectric material to form a feature definition.

Abstract translation: 提供了用于沉积电介质材料的方法，用作抗镶嵌层中的抗反射涂层和牺牲电介质材料。 在一个方面，提供了一种处理衬底的方法，包括通过使含氧有机硅化合物和酸性化合物反应，在酸性电介质层上沉积光致抗蚀剂材料，并使光致抗蚀剂层图形化，在衬底上沉积酸性介电层。 通过蚀刻部分特征定义，沉积酸性电介质材料，蚀刻特征定义的其余部分，然后除去酸性介电材料以形成特征定义，酸性介电层可用作形成特征定义的牺牲层。

公开(公告)号：WO2005027862A1

公开(公告)日：2005-03-31

申请号：PCT/EP2004/009267

申请日：2004-08-18

Applicant: UNILEVER N.V. ,  UNILEVER PLC ,  HINDUSTAN LEVER LIMITED ,  CHARMOT, Dominique ,  GIBBS, Christopher, David ,  KOLOSOV, Oleg ,  LIU, Mingjun ,  NGUYEN, Son, Hoai ,  PETRO, Miroslav ,  RANNARD, Steven, Paul ,  NAVA-SALGADO, Victor ,  CHANG, Han, Ting ,  DUNCALF, David

Inventor： CHARMOT, Dominique ,  GIBBS, Christopher, David ,  KOLOSOV, Oleg ,  LIU, Mingjun ,  NGUYEN, Son, Hoai ,  PETRO, Miroslav ,  RANNARD, Steven, Paul ,  NAVA-SALGADO, Victor ,  CHANG, Han, Ting ,  DUNCALF, David

IPC: A61K7/16

CPC classification number: A61K8/86 ,  A61K8/8158 ,  A61K2800/5426 ,  A61Q11/00

Abstract: Oral care composition comprising a polymer obtainable by copolymerising a mixture of comonomers, said mixture comprising: (a) a cationic monomer selected from (ar-vinylbenzyl) trimethylammonium chloride, (dimethylaminopropyl) methacrylamide, [2(methacryloyloxy)ethyl]trimethylammonium chloride, 2-aminoethylmethacrylate hydrochloride and mixtures thereof; and (b) at least one anionic or neutral monomer selected from styrene, mono-2-(methacryloyl)ethyl succinate, vinyl acetate, N,N-dimethylacrylamide, 2-ethylhexylacrylate, vinylphosphonic acid, acrylic acid, 2-acrylamido-2-methyl-1-propanesulfonic acid, N-[tris(hydroxymethyl)methyl] acrylamide, N-vinylpyrrolidone, butyl acrylate, 2-hydroxyethylacrylate, polyethyleneglycol methylethermethacrylate and mixtures thereof, said oral care composition in the form of any one of a toothpaste, gel, foam, chewing gum, deformable strip or mouthwash and which is suitable for use in the oral cavity.

Abstract translation: 所述混合物包含：（a）阳离子单体，选自（芳基乙烯基苄基）三甲基氯化铵，（二甲基氨基丙基）甲基丙烯酰胺，[2（甲基丙烯酰氧基）乙基]三甲基氯化铵，2 甲基丙烯酸氨基乙酯盐酸盐及其混合物; 和（b）至少一种阴离子或中性单体，其选自苯乙烯，琥珀酸单-2-（甲基丙烯酰）乙酯，乙酸乙烯酯，N，N-二甲基丙烯酰胺，丙烯酸2-乙基己酯，乙烯基膦酸，丙烯酸，2-丙烯酰胺基-2- 甲基-1-丙磺酸，N- [三（羟甲基）甲基]丙烯酰胺，N-乙烯基吡咯烷酮，丙烯酸丁酯，丙烯酸2-羟乙酯，聚乙二醇甲基醚甲基丙烯酸酯及其混合物，所述口腔护理组合物为牙膏，凝胶 ，泡沫，口香糖，可变形条或漱口水，适用于口腔。

公开(公告)号：WO2013040527A1

公开(公告)日：2013-03-21

申请号：PCT/US2012/055678

申请日：2012-09-16

Applicant: MICROBIOTIX, INC. ,  NGUYEN, Son, T. ,  DING, Xiaoyuan ,  BUTLER, Michelle, M.

Inventor： NGUYEN, Son, T. ,  DING, Xiaoyuan ,  BUTLER, Michelle, M.

IPC: A01N43/38 ,  A61K31/40 ,  C07D487/02

CPC classification number: A61K31/4178 ,  A61K31/437 ,  A61K31/497 ,  A61K31/506 ,  A61K45/06 ,  C07D403/14 ,  C07D405/14 ,  C07D409/14 ,  C07D471/04 ,  Y02A50/411 ,  A61K2300/00

Abstract: The invention provides antimicrobial organic compounds and compositions thereof that kill or inhibit growth of cells of one or more microbial pathogens.

Abstract translation: 本发明提供杀死或抑制一种或多种微生物病原体细胞生长的抗微生物有机化合物及其组合物。

公开(公告)号：WO2012048049A2

公开(公告)日：2012-04-12

申请号：PCT/US2011/054990

申请日：2011-10-05

Applicant: SILICON IMAGE, INC. ,  SUL, Chinsong ,  KIM, Min-kyu ,  NGUYEN, Son

Inventor： SUL, Chinsong ,  KIM, Min-kyu ,  NGUYEN, Son

IPC: G01R31/28

CPC classification number: G01R31/31716

Abstract: Embodiments of the invention are generally directed to testing of high-speed input-output devices. An embodiment of a high-speed input-output apparatus includes a transmitter and a receiver, and a loop-back connection from an output of the transmitter to an input of the receiver, the loop-back connection including a first connector and a second connector for transmission of differential signals. The apparatus further includes a first inductor having a first terminal and a second terminal and second inductor having a first terminal and a second terminal, the first terminal of the first inductor being connected to the first connector and the first terminal of the second inductor being connected to the second connector, the second terminal of the first inductor and the second terminal of the second inductor providing a test access port for direct current testing of the apparatus.

Abstract translation: 本发明的实施例通常针对高速输入输出设备的测试。 高速输入输出设备的一个实施例包括发送器和接收器以及从发送器的输出端到接收器的输入端的环回连接，环回连接包括第一连接器和第二连接器 用于传输差分信号。 该装置还包括具有第一端子和第二端子的第一电感器以及具有第一端子和第二端子的第二电感器，第一电感器的第一端子连接到第一连接器并且第二电感器的第一端子连接 到第二连接器，第一电感器的第二端子和第二电感器的第二端子提供用于设备的直流测试的测试访问端口。

公开(公告)号：WO2011084667A3

公开(公告)日：2011-07-14

申请号：PCT/US2010/060933

申请日：2010-12-17

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  NGUYEN, Son, Van ,  GRILL, Alfred ,  HAIGH, Thomas, J. ,  SHOBHA, Hosadurga ,  VO, Tuan, A.

Inventor： NGUYEN, Son, Van ,  GRILL, Alfred ,  HAIGH, Thomas, J. ,  SHOBHA, Hosadurga ,  VO, Tuan, A.

IPC: H01L21/768 ,  H01L21/28

Abstract: An interconnect structure is provided that includes a dielectric material (52) having a dielectric constant of 4.0 or less and including a plurality of conductive features (56) embedded therein. The dielectric material (52) has an upper surface that is located beneath an upper surface of each of the plurality of conductive features (56). A first dielectric cap (58) is located on the upper surface of the dielectric material (52) and extends onto at least a portion of the upper surface of each of the plurality of conductive features (56). As shown, the first dielectric cap (58) forms an interface (59) with each of the plurality of conductive features (56) that is opposite to an electrical field that is generated by neighboring conductive features. The inventive structure also includes a second dielectric cap (60) located on an exposed portion of the upper surface of each of the plurality of conductive features (56) not covered with the first dielectric cap (58). The second dielectric cap (60) further covers on an exposed surface of the first dielectric cap (58).

公开(公告)号：WO2010129292A3

公开(公告)日：2011-02-17

申请号：PCT/US2010032597

申请日：2010-04-27

Applicant: APPLIED MATERIALS INC ,  NIJHAWAN SANDEEP ,  BURROWS BRIAN H ,  ISHIKAWA TETSUYA ,  KRYLIOUK OLGA ,  VASUDEV ANAND ,  SU JIE ,  QUACH DAVID H ,  CHANG ANZHONG ,  MELNIK YURIY ,  RATIA HARSUKHDEEP S ,  NGUYEN SON T ,  PANG LILY

Inventor： NIJHAWAN SANDEEP ,  BURROWS BRIAN H ,  ISHIKAWA TETSUYA ,  KRYLIOUK OLGA ,  VASUDEV ANAND ,  SU JIE ,  QUACH DAVID H ,  CHANG ANZHONG ,  MELNIK YURIY ,  RATIA HARSUKHDEEP S ,  NGUYEN SON T ,  PANG LILY

IPC: H01L33/00

CPC classification number: H01L21/67109 ,  C30B25/02 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/67115 ,  H01L21/67167 ,  H01L21/67207 ,  H01L33/007

Abstract: The present invention generally provides apparatus and methods for forming LED structures. One embodiment of the present invention provides a method for fabricating a compound nitride structure comprising forming a first layer comprising a first group-III element and nitrogen on substrates in a first processing chamber by a hydride vapor phase epitaxial (HVPE) process or a metal organic chemical vapor deposition (MOCVD) process, forming a second layer comprising a second group-III element and nitrogen over the first layer in a second processing chamber by a MOCVD process, and forming a third layer comprising a third group-III element and nitrogen over the second layer by a MOCVD process.

Abstract translation: 本发明总体上提供了用于形成LED结构的装置和方法。 本发明的一个实施方案提供了一种制备复合氮化物结构的方法，包括通过氢化物气相外延（HVPE）工艺或金属有机物在第一处理室中在衬底上形成包含第一III族元素的第一层和氮 化学气相沉积（MOCVD）工艺，通过MOCVD工艺在第二处理室中在第一层上形成包含第二III族元素的第二层和氮，并且形成包含第三族III族元素和氮的第三层 第二层通过MOCVD过程。

公开(公告)号：WO2010099032A3

公开(公告)日：2011-01-06

申请号：PCT/US2010024665

申请日：2010-02-19

Applicant: EDWARDS LIFESCIENCES CORP ,  CHAU MARK ,  YI SEUNG ,  CORSO PHILLIP ,  POPP MICHAEL J ,  OLIN JANE ,  NGUYEN SON V ,  GOLEMO KEVIN

Inventor： CHAU MARK ,  YI SEUNG ,  CORSO PHILLIP ,  POPP MICHAEL J ,  OLIN JANE ,  NGUYEN SON V ,  GOLEMO KEVIN

IPC: A61F2/24 ,  A61F2/84 ,  A61F2/86 ,  A61L27/04 ,  A61L27/14 ,  A61M29/00

CPC classification number: A61F2/2457 ,  A61F2/2418 ,  A61F2/2436 ,  A61F2220/0016 ,  A61F2220/0075 ,  A61F2230/0054 ,  A61F2230/0078 ,  A61F2250/0039

Abstract: A prosthetic mitral valve assembly and method of inserting the same is disclosed. In certain disclosed embodiments, the prosthetic mitral valve assembly includes a stent and valve combination. The stent is designed so that the anchoring portion is positioned above the annulus of the mitral valve and in the left atrium. The stent is radially expandable so that it can expand into position against the walls of the left atrium and accommodate a wide range of anatomies. Contact between the stent and the native tissue in the left atrium reduces paravalvular leakage and prevents migration of the stent once in place.

Abstract translation: 公开了一种假体二尖瓣组件及其插入方法。 在某些公开的实施例中，假体二尖瓣组件包括支架和瓣膜组合。 支架被设计成使得锚固部分位于二尖瓣环和左心房的环上。 支架是径向可扩张的，使得其能够相对于左心房的壁膨胀到适当的位置并适应宽范围的解剖结构。 支架与左心房中的天然组织之间的接触减少了瓣膜渗漏，并防止了支架移动到位。

公开(公告)号：WO2010036999A2

公开(公告)日：2010-04-01

申请号：PCT/US2009/058557

申请日：2009-09-28

Applicant: APPLIED MATERIALS, INC. ,  MERRY, Nir ,  NGUYEN, Son T.

Inventor： MERRY, Nir ,  NGUYEN, Son T.

IPC: H01L21/205 ,  H01L21/00

CPC classification number: C23C16/45544 ,  C23C16/45502 ,  C23C16/45563

Abstract: Methods and apparatus for processing substrates are disclosed herein. The process chamber includes a chamber body, a substrate support pedestal, a pump port and a gas injection funnel. The chamber body has an inner volume and the substrate support pedestal is disposed in the inner volume of the chamber body. The pump port is coupled to the inner volume and is disposed off-center from a central axis of the substrate support pedestal. The pump port provides azimuthally non-uniform pumping proximate to a surface of the substrate support pedestal and creates localized regions of high pressure and low pressure within the inner volume during use. The gas injection funnel is disposed in a ceiling of the chamber body and opposite the substrate support pedestal. The gas injection funnel is offset from the central axis of the substrate support pedestal and is disposed in a region of low pressure.

Abstract translation: 本文公开了用于处理基板的方法和设备。 处理腔室包括腔室主体，基板支撑基座，泵端口和气体注入漏斗。 腔室主体具有内部容积，并且基板支撑基座设置在腔室主体的内部容积中。 泵端口联接到内部容积并且被设置成偏离基板支撑基座的中心轴线的中心。 泵端口在靠近衬底支撑基座的表面处提供方位角不均匀的泵送并且在使用期间在内部容积内产生局部高压和低压的区域。 气体注入漏斗设置在腔室主体的顶部并且与基板支撑基座相对。 气体注入漏斗从衬底支撑基座的中心轴线偏移并设置在低压区域中。