公开(公告)号：WO2008011403A3

公开(公告)日：2008-10-09

申请号：PCT/US2007073676

申请日：2007-07-17

Applicant: APPLIED MATERIALS INC ,  NAIK MEHUL

Inventor： NAIK MEHUL

IPC: H01L21/44

CPC classification number: H01L21/28556 ,  C23C18/08 ,  H01L21/76843 ,  H01L21/76871

Abstract: Embodiments of the present invention generally relate to methods and apparatuses using supercritical fluids and/or dense fluids to deposit a metal material on the surface of a substrate. In one embodiment, a metal material layer is deposited by applying a supercritical fluid, a dense fluid, or combinations thereof and a metal-containing precursor to the surface of a substrate inside a substrate processing chamber. In another embodiment, a first metal material and a second metal material is sequentially deposited and annealing is performed to form a metal alloy material on the surface of a substrate. In still another embodiment, a copper material layer is deposited by applying a supercritical fluid, a dense fluid, or combinations thereof and a copper containing precursor to the surface of the substrate.

Abstract translation: 本发明的实施例一般涉及使用超临界流体和/或稠密流体在基底表面上沉积金属材料的方法和设备。 在一个实施例中，金属材料层通过将超临界流体，致密流体或其组合以及含金属前体施加到衬底处理室内的衬底表面来沉积。 在另一个实施例中，顺序地沉积第一金属材料和第二金属材料并且执行退火以在衬底的表面上形成金属合金材料。 在又一个实施例中，铜材料层通过将超临界流体，稠密流体或其组合以及含铜前体施加到基底的表面来沉积。

公开(公告)号：WO2008011403A2

公开(公告)日：2008-01-24

申请号：PCT/US2007/073676

申请日：2007-07-17

Applicant: APPLIED MATERIALS, INC. ,  NAIK, Mehul

Inventor： NAIK, Mehul

IPC: H01L21/443

CPC classification number: H01L21/28556 ,  C23C18/08 ,  H01L21/76843 ,  H01L21/76871

Abstract: Embodiments of the present invention generally relate to methods and apparatuses using supercritical fluids and/or dense fluids to deposit a metal material on the surface of a substrate. In one embodiment, a metal material layer is deposited by applying a supercritical fluid, a dense fluid, or combinations thereof and a metal-containing precursor to the surface of a substrate inside a substrate processing chamber. In another embodiment, a first metal material and a second metal material is sequentially deposited and annealing is performed to form a metal alloy material on the surface of a substrate. In still another embodiment, a copper material layer is deposited by applying a supercritical fluid, a dense fluid, or combinations thereof and a copper containing precursor to the surface of the substrate.

Abstract translation: 本发明的实施方案一般涉及使用超临界流体和/或致密流体将金属材料沉积在基底表面上的方法和装置。 在一个实施例中，通过将超临界流体，致密流体或其组合和含金属的前体施加到衬底处理室内的衬底的表面来沉积金属材料层。 在另一个实施例中，顺序地沉积第一金属材料和第二金属材料，并执行退火以在基板的表面上形成金属合金材料。 在另一个实施例中，通过将超临界流体，致密流体或其组合和含铜前体施加到基底的表面来沉积铜材料层。

公开(公告)号：WO2009014646A1

公开(公告)日：2009-01-29

申请号：PCT/US2008/008778

申请日：2008-07-18

Applicant: APPLIED MATERIALS, INC. ,  NAIK, Mehul ,  MIZUUCHI, Keisuke ,  DAI, Huixiong ,  ARMACOST, Michael ,  XIA, Li-Qun

Inventor： NAIK, Mehul ,  MIZUUCHI, Keisuke ,  DAI, Huixiong ,  ARMACOST, Michael ,  XIA, Li-Qun

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/31144 ,  H01L21/3105 ,  H01L21/76829 ,  Y10T428/261

Abstract: In one aspect, a method is provided which includes (1) providing a substrate including a photoresist layer and an additional layer which may be a potential source of contaminants, and (2) preventing a release of contaminants from the additional layer, wherein preventing the release of contaminants from the additional layer protects the photoresist layer from exposure to contaminants from the additional layer. Numerous other aspects are provided.

Abstract translation: 在一个方面，提供了一种方法，其包括（1）提供包括光致抗蚀剂层的基材和可能是潜在的污染源的附加层，和（2）防止污染物从附加层释放，其中防止 污染物从附加层的释放保护光致抗蚀剂层免受来自附加层的污染物的侵害。 提供了许多其他方面。

公开(公告)号：WO2004104698A3

公开(公告)日：2005-04-14

申请号：PCT/US2004015531

申请日：2004-05-18

Applicant: APPLIED MATERIALS INC ,  NGUYEN SON VAN ,  ARMACOST MICHAEL D ,  NAIK MEHUL ,  DIXIT GIRISH A ,  YIEH ELLIE Y

Inventor： NGUYEN SON VAN ,  ARMACOST MICHAEL D ,  NAIK MEHUL ,  DIXIT GIRISH A ,  YIEH ELLIE Y

IPC: G03F20060101 ,  G03F7/09 ,  G03F7/11 ,  H01L21/027 ,  H01L21/311 ,  H01L21/316 ,  H01L21/768

CPC classification number: G03F7/091 ,  G03F7/11 ,  H01L21/0276 ,  H01L21/31144 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76835

Abstract: Methods are provided for depositing a dielectric material for use as an anti-reflective coating and sacrificial dielectric material in damascene formation. In one aspect, a process is provided for processing a substrate including depositing an acidic dielectric layer on the substrate by reacting an oxygen-containing organosilicon compound and an acidic compound, depositing a photoresist material on the acidic dielectric layer, and patterning the photoresist layer. The acidic dielectric layer may be used as a sacrificial layer in forming a feature definition by etching a partial feature definition, depositing the acidic dielectric material, etching the remainder of the feature definition, and then removing the acidic dielectric material to form a feature definition.

Abstract translation: 提供了用于沉积电介质材料的方法，用作抗镶嵌层中的抗反射涂层和牺牲电介质材料。 在一个方面，提供了一种处理衬底的方法，包括通过使含氧有机硅化合物和酸性化合物反应，在酸性电介质层上沉积光致抗蚀剂材料，并使光致抗蚀剂层图形化，在衬底上沉积酸性介电层。 通过蚀刻部分特征定义，沉积酸性电介质材料，蚀刻特征定义的其余部分，然后除去酸性介电材料以形成特征定义，酸性介电层可用作形成特征定义的牺牲层。

公开(公告)号：WO2012087613A3

公开(公告)日：2012-08-16

申请号：PCT/US2011064179

申请日：2011-12-09

Applicant: APPLIED MATERIALS INC ,  RAJAGOPALAN NAGARAJAN ,  PARK JI AE ,  YAMASE RYAN ,  PATEL SHAMIK ,  NOWAK THOMAS ,  XIA LI-QUN ,  KIM BOK HOEN ,  DING RAN ,  BALDINO JIM ,  NAIK MEHUL ,  RAMASWAMI SESH

Inventor： RAJAGOPALAN NAGARAJAN ,  PARK JI AE ,  YAMASE RYAN ,  PATEL SHAMIK ,  NOWAK THOMAS ,  XIA LI-QUN ,  KIM BOK HOEN ,  DING RAN ,  BALDINO JIM ,  NAIK MEHUL ,  RAMASWAMI SESH

IPC: H01L21/60 ,  H01L23/045 ,  H01L23/055 ,  H01L23/48

CPC classification number: H01L24/13 ,  H01L21/02074 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/6835 ,  H01L21/68792 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76898 ,  H01L24/11 ,  H01L24/742 ,  H01L2221/68372 ,  H01L2221/68381 ,  H01L2224/11002 ,  H01L2224/11452 ,  H01L2224/1182 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/13687 ,  H01L2224/742 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/351 ,  H01L2924/05042 ,  H01L2924/00

Abstract: A through-silicon via fabrication method includes etching a plurality of through holes in a silicon plate. An oxide liner is deposited on the surface of the silicon plate and on the sidewalls and bottom wall of the through holes. A metallic conductor is then deposited in the through holes. In another version, which may be used concurrently with the oxide liner, a silicon nitride passivation layer is deposited on the exposed back surface of the silicon plate of the substrate.

Abstract translation: 硅通孔制造方法包括蚀刻硅板中的多个通孔。 氧化物衬垫沉积在硅板的表面上以及通孔的侧壁和底壁上。 然后将金属导体沉积在通孔中。 在可以与氧化物衬垫同时使用的另一种形式中，氮化硅钝化层被沉积在衬底的硅板的暴露的背表面上。

公开(公告)号：WO2011115997A3

公开(公告)日：2012-04-12

申请号：PCT/US2011028531

申请日：2011-03-15

Applicant: APPLIED MATERIALS INC ,  RAJAGOPALAN NAGARAJAN ,  HAN XINHAI ,  YAMASE RYAN ,  PARK JI AE ,  PATEL SHAMIK ,  NOWAK THOMAS ,  CUI ZHENGJIANG ,  NAIK MEHUL ,  PARK HEUNG LAK ,  DING RAN ,  KIM BOK HOEN

Inventor： RAJAGOPALAN NAGARAJAN ,  HAN XINHAI ,  YAMASE RYAN ,  PARK JI AE ,  PATEL SHAMIK ,  NOWAK THOMAS ,  CUI ZHENGJIANG ,  NAIK MEHUL ,  PARK HEUNG LAK ,  DING RAN ,  KIM BOK HOEN

IPC: H01L21/318 ,  H01L21/60

CPC classification number: H01L21/02068 ,  C23C16/345 ,  C23C16/45523 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/56 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/291 ,  H01L23/3171 ,  H01L24/11 ,  H01L24/13 ,  H01L24/742 ,  H01L2224/1181 ,  H01L2224/1182 ,  H01L2224/11827 ,  H01L2224/11831 ,  H01L2224/119 ,  H01L2224/11901 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/1358 ,  H01L2224/13583 ,  H01L2224/13687 ,  H01L2224/742 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/351 ,  H01L2924/05042 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00

Abstract: A method of forming a passivation layer comprising silicon nitride on features of a substrate is described. In a first stage of the deposition method, a dielectric deposition gas, comprising a silicon-containing gas and a nitrogen-containing gas, is introduced into the process zone and energized to deposit a silicon nitride layer. In a second stage, a treatment gas, having a different composition than that of the dielectric deposition gas, is introduced into the process zone and energized to treat the silicon nitride layer. The first and second stages can be performed a plurality of times.

Abstract translation: 描述了在衬底的特征上形成包含氮化硅的钝化层的方法。 在沉积方法的第一阶段中，将包含含硅气体和含氮气体的介电沉积气体引入工艺区域并通电以沉积氮化硅层。 在第二阶段中，将具有与介电沉积气体成分不同的组成的处理气体引入处理区并通电以处理氮化硅层。 第一和第二阶段可以进行多次。

公开(公告)号：WO2011115997A2

公开(公告)日：2011-09-22

申请号：PCT/US2011/028531

申请日：2011-03-15

Applicant: APPLIED MATERIALS, INC. ,  RAJAGOPALAN, Nagarajan ,  HAN, Xinhai ,  YAMASE, Ryan ,  PARK, Ji Ae ,  PATEL, Shamik ,  NOWAK, Thomas ,  CUI, Zhengjiang ,  NAIK, Mehul ,  PARK, Heung Lak ,  DING, Ran ,  KIM, Bok Hoen

Inventor： RAJAGOPALAN, Nagarajan ,  HAN, Xinhai ,  YAMASE, Ryan ,  PARK, Ji Ae ,  PATEL, Shamik ,  NOWAK, Thomas ,  CUI, Zhengjiang ,  NAIK, Mehul ,  PARK, Heung Lak ,  DING, Ran ,  KIM, Bok Hoen

IPC: H01L21/318 ,  H01L21/60

CPC classification number: H01L21/02068 ,  C23C16/345 ,  C23C16/45523 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/56 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/291 ,  H01L23/3171 ,  H01L24/11 ,  H01L24/13 ,  H01L24/742 ,  H01L2224/1181 ,  H01L2224/1182 ,  H01L2224/11827 ,  H01L2224/11831 ,  H01L2224/119 ,  H01L2224/11901 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/1358 ,  H01L2224/13583 ,  H01L2224/13687 ,  H01L2224/742 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/351 ,  H01L2924/05042 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00

Abstract: A method of forming a passivation layer comprising silicon nitride on features of a substrate is described. In a first stage of the deposition method, a dielectric deposition gas, comprising a silicon-containing gas and a nitrogen-containing gas, is introduced into the process zone and energized to deposit a silicon nitride layer. In a second stage, a treatment gas, having a different composition than that of the dielectric deposition gas, is introduced into the process zone and energized to treat the silicon nitride layer. The first and second stages can be performed a plurality of times.

Abstract translation: 描述了在衬底的特征上形成包括氮化硅的钝化层的方法。 在沉积方法的第一阶段中，将包含含硅气体和含氮气体的介电沉积气体引入工艺区域并通电以沉积氮化硅层。 在第二阶段中，将具有不同于介电沉积气体的组成不同的处理气体引入处理区并通电以处理氮化硅层。 第一和第二阶段可以执行多次。

公开(公告)号：WO2012087613A2

公开(公告)日：2012-06-28

申请号：PCT/US2011/064179

申请日：2011-12-09

Applicant: APPLIED MATERIALS, INC. ,  RAJAGOPALAN, Nagarajan ,  PARK, Ji Ae ,  YAMASE, Ryan ,  PATEL, Shamik ,  NOWAK, Thomas ,  XIA, Li-Qun ,  KIM, Bok Hoen ,  DING, Ran ,  BALDINO, Jim ,  NAIK, Mehul ,  RAMASWAMI, Sesh

Inventor： RAJAGOPALAN, Nagarajan ,  PARK, Ji Ae ,  YAMASE, Ryan ,  PATEL, Shamik ,  NOWAK, Thomas ,  XIA, Li-Qun ,  KIM, Bok Hoen ,  DING, Ran ,  BALDINO, Jim ,  NAIK, Mehul ,  RAMASWAMI, Sesh

IPC: H01L21/60 ,  H01L23/48 ,  H01L23/045 ,  H01L23/055

CPC classification number: H01L24/13 ,  H01L21/02074 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/6835 ,  H01L21/68792 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76898 ,  H01L24/11 ,  H01L24/742 ,  H01L2221/68372 ,  H01L2221/68381 ,  H01L2224/11002 ,  H01L2224/11452 ,  H01L2224/1182 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/13687 ,  H01L2224/742 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/351 ,  H01L2924/05042 ,  H01L2924/00

Abstract: A through-silicon via fabrication method includes etching a plurality of through holes in a silicon plate. An oxide liner is deposited on the surface of the silicon plate and on the sidewalls and bottom wall of the through holes. A metallic conductor is then deposited in the through holes. In another version, which may be used concurrently with the oxide liner, a silicon nitride passivation layer is deposited on the exposed back surface of the silicon plate of the substrate.

Abstract translation: 一种硅通孔制造方法包括蚀刻硅板中的多个通孔。 在硅板的表面和通孔的侧壁和底壁上沉积氧化物衬垫。 然后将金属导体沉积在通孔中。 在可与氧化物衬垫同时使用的另一种方案中，氮化硅钝化层沉积在衬底的硅板的暴露后表面上。

公开(公告)号：WO2009140094A3

公开(公告)日：2009-11-19

申请号：PCT/US2009/042708

申请日：2009-05-04

Applicant: APPLIED MATERIALS, INC. ,  XIA, Li-Qun ,  BALSEANU, Mihaela ,  SHEK, Meiyee ,  LI, Siyi ,  CUI, Zhenjiang ,  NAIK, Mehul, B. ,  ARMACOST, Michael, D. ,  MC CLINTOCK, William, H.

Inventor： XIA, Li-Qun ,  BALSEANU, Mihaela ,  SHEK, Meiyee ,  LI, Siyi ,  CUI, Zhenjiang ,  NAIK, Mehul, B. ,  ARMACOST, Michael, D. ,  MC CLINTOCK, William, H.

IPC: H01L21/302 ,  H01L21/306 ,  H01L21/205

Abstract: A method and apparatus for forming narrow vias in a substrate is provided. A pattern recess is etched into a substrate by conventional lithography. A thin conformal layer is formed over the surface of the substrate, including the sidewalls and bottom of the pattern recess. The thickness of the conformal layer reduces the effective width of the pattern recess. The conformal layer is removed from the bottom of the pattern recess by anisotropic etching to expose the substrate beneath. The substrate is then etched using the conformal layer covering the sidewalls of the pattern recess as a mask. The conformal layer is then removed using a wet etchant.

公开(公告)号：WO2009140094A2

公开(公告)日：2009-11-19

申请号：PCT/US2009042708

申请日：2009-05-04

Applicant: APPLIED MATERIALS INC ,  XIA LI-QUN ,  BALSEANU MIHAELA ,  SHEK MEIYEE ,  LI SIYI ,  CUI ZHENJIANG ,  NAIK MEHUL B ,  ARMACOST MICHAEL D ,  MC CLINTOCK WILLIAM H

Inventor： XIA LI-QUN ,  BALSEANU MIHAELA ,  SHEK MEIYEE ,  LI SIYI ,  CUI ZHENJIANG ,  NAIK MEHUL B ,  ARMACOST MICHAEL D ,  MC CLINTOCK WILLIAM H

IPC: H01L21/302 ,  H01L21/205 ,  H01L21/306

CPC classification number: H01L21/31144 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3141 ,  H01L21/31608 ,  H01L21/318 ,  H01L21/3185 ,  H01L21/76816

Abstract: A method and apparatus for forming narrow vias in a substrate is provided. A pattern recess is etched into a substrate by conventional lithography. A thin conformal layer is formed over the surface of the substrate, including the sidewalls and bottom of the pattern recess. The thickness of the conformal layer reduces the effective width of the pattern recess. The conformal layer is removed from the bottom of the pattern recess by anisotropic etching to expose the substrate beneath. The substrate is then etched using the conformal layer covering the sidewalls of the pattern recess as a mask. The conformal layer is then removed using a wet etchant.

Abstract translation: 提供了一种用于在基板中形成窄通孔的方法和装置。 通过常规光刻将图案凹槽蚀刻到基底中。 在衬底的表面上形成薄的共形层，包括图案凹槽的侧壁和底部。 共形层的厚度减小了图案凹槽的有效宽度。 通过各向异性蚀刻从图案凹槽的底部去除共形层以暴露下面的衬底。 然后使用覆盖图案凹槽的侧壁的保形层作为掩模蚀刻衬底。 然后使用湿蚀刻剂除去保形层。