公开(公告)号：WO2005072338A3

公开(公告)日：2006-06-01

申请号：PCT/US2005002340

申请日：2005-01-25

Applicant: TBW IND INC ,  BENNER STEPHEN J

Inventor： BENNER STEPHEN J

IPC: B24B1/00 ,  B08B3/14 ,  B08B7/00 ,  B24B5/00 ,  B24B7/00 ,  B24B7/19 ,  B24B9/00 ,  B24B21/18 ,  B24B29/00 ,  B24B33/00 ,  B24B37/04 ,  B24B53/007 ,  B24B57/02 ,  B24C5/00 ,  C03C23/00 ,  C23G1/02 ,  H01L21/302 ,  H01L21/321 ,  H01L21/46

CPC classification number: H01L21/3212 ,  B24B53/017 ,  B24B57/02

Abstract: An arrangement for performing a multi-step polishing process on a single stage chemical mechanical planarization (CMP) apparatus utilizes an in-situ conditioning operation to continuously clean and evacuate debris and spent polishing slurry from the surface of the polishing pad. By presenting a clean, virtually "new" polishing pad surface at the beginning of each planarization cycle, polishing agents of different chemistries, morphologies, temperatures, etc. may be used without the need to remove the wafer to change the polishing source or transfer the wafer to another CMP polishing station. A multi-positional valve may be used to control the introduction of various process fluids, including a variety of different polishing slurries and conditioning/flushing agents. The use of different conditioning materials allows for the surface of the polishing pad to be altered for different process conditions (e.g., neutralizing prior polishing chemicals, modifying the surface temperature of the pad to control polishing rate, use of surfactants to dislodge particles that become attracted to the pad surface, etc.).

Abstract translation: 用于在单级化学机械平面化（CMP）装置上进行多步抛光工艺的装置利用原位调节操作，从抛光垫的表面连续地清洁和排出碎屑和废抛光浆料。 通过在每个平坦化循环开始时提供干净的，实际上“新的”抛光垫表面，可以使用不同化学，形态，温度等的抛光剂，而不需要去除晶片来改变抛光源或转移 晶圆到另一个CMP抛光台。 多位置阀可用于控制各种工艺流体的引入，包括各种不同的抛光浆料和调理/冲洗剂。 使用不同的调理材料允许在不同的工艺条件下改变抛光垫的表面（例如，中和以前的抛光化学品，改变焊盘的表面温度以控制抛光速率，使用表面活性剂去除被吸引的颗粒 到垫表面等）。

公开(公告)号：WO2006032622A1

公开(公告)日：2006-03-30

申请号：PCT/EP2005/054568

申请日：2005-09-14

Applicant: STMICROELECTRONICS S.R.L. ,  POZZI, Massimiliano ,  D'ANGELO, Gianfranco

Inventor： POZZI, Massimiliano ,  D'ANGELO, Gianfranco

IPC: B24B53/007 ,  B24B37/04

CPC classification number: B24B53/017

Abstract: The present invention refers to a multi-station rotary machine for polishing wafers, comprising a machine body (1) and a rotating tower (2) consisting of a plurality of heads (3) each of which supports a wafer (4). Said tower (2) made to rotate with predefined pitch between a first station (25) for loading/unloading the wafers (4) and subsequent work stations all the same in which said heads (3) position themselves on rotatable polishing plates (5) on which rotating cleaning arms (6) act in the work phase with rotation pin and rotating end (7) in contact with the above mentioned plates (5). Between said work stations intermediate washing zones of the heads (3) and the wafers (4) are provided for by means of cleaning means (8, 17) that comprise delivery blocks (8) of washing liquid positioned between said plates (5) and each one having an upper hole (9) for the delivery of a nozzle (11) spraying liquid under pressure for cleaning one of said heads (3) and the lower part of the tower (2), and a supplementary hole connected to a further nozzle (13) for cleaning the machine body (1) and the rotation pin of one of said cleaning arms (6). Said cleaning means also comprise arms (17) for delivering the washing liquid positioned above said plates (5) with external support and each one having a supplementary lower hole (20) connected to a tube (21) that carries the liquid towards a further nozzle (22) for cleaning the lower part of said rotating arms (6) when they are in the rest position.

Abstract translation: 本发明涉及一种用于抛光晶片的多工位旋转机，包括机体（1）和由多个头（3）组成的旋转塔（2），每个头（3）支撑晶片（4）。 所述塔架（2）在用于装载/卸载晶片（4）的第一工位（25）和所有头部（3）自身位于可旋转的抛光板（5）上的所有相同的工作站之间以预定的间距旋转， 在旋转销和与上述板（5）接触的旋转端（7）上，旋转清洁臂（6）在工作相中作用。 在所述工作站之间，通过清洁装置（8,17）提供头部（3）和晶片（4）的中间洗涤区域，所述清洁装置包括位于所述板（5）和 每个具有用于输送喷嘴（11）的喷嘴（11）的上孔（9），用于在压力下喷射液体以清洁所述头部（3）和塔架（2）的下部之一;以及辅助孔，其连接到另一个 用于清洁机体（1）的喷嘴（13）和所述清洁臂（6）之一的旋转销。 所述清洁装置还包括用于通过外部支撑件输送位于所述板（5）上方的洗涤液的臂（17），并且每个具有连接到管（21）的辅助下孔（20），所述管（21）将液体朝向另一个喷嘴 （22），用于当它们处于静止位置时清洁所述旋转臂（6）的下部。

公开(公告)号：WO2005002794A3

公开(公告)日：2005-03-31

申请号：PCT/US2004022722

申请日：2004-07-01

Applicant: APPLIED MATERIALS INC ,  WANG YAN ,  NEO SIEW S ,  LIU FENG Q ,  TSAI STAN D ,  HU YONGQI ,  DUBOUST ALAIN ,  MANENS ANTOINE P ,  WADENSWEILER RALPH M ,  MAVLIV RASHID ,  CHEN LIANG-YUH ,  OLGADO DONALD J K ,  BUTTERFIELD PAUL D ,  TSENG MING-KUEI ,  CHANG SHOU-SUNG ,  SUN LIZHONG

Inventor： WANG YAN ,  NEO SIEW S ,  LIU FENG Q ,  TSAI STAN D ,  HU YONGQI ,  DUBOUST ALAIN ,  MANENS ANTOINE P ,  WADENSWEILER RALPH M ,  MAVLIV RASHID ,  CHEN LIANG-YUH ,  OLGADO DONALD J K ,  BUTTERFIELD PAUL D ,  TSENG MING-KUEI ,  CHANG SHOU-SUNG ,  SUN LIZHONG

IPC: B23H5/08 ,  B24B37/04 ,  B24B53/007 ,  C25F7/00 ,  H01L21/321

CPC classification number: B24B37/04 ,  B23H5/08 ,  B24B53/017 ,  C25F7/00

Abstract: The invention provides a cell, a system and an article for processing a substrate in an electrochemical mechanical polishing system. A cell for polishing a substrate includes a polishing pad disposed on a top surface of a platen assembly. A plurality of conductive elements are arranged in a spaced-apart relation across the upper polishing surface and adapted to bias the substrate relative to an electrode disposed between the pad and the platen assembly. A plurality of passages are formed through the platen assembly between the top surface and a plenum defined within the platen assembly. A system is provided having a bulk polishing cell and a residual polishing cell. The residual polishing cell includes a biased conductive polishing surface. In further embodiments, the conductive element is protected from attack by process chemistries.

Abstract translation: 本发明提供一种用于在电化学机械抛光系统中处理基底的电池，系统和制品。 用于抛光基板的单元包括设置在压板组件的顶表面上的抛光垫。 多个导电元件跨过上抛光表面以间隔的关系布置，并且适于相对于设置在垫和压板组件之间的电极偏置衬底。 多个通道通过压板组件形成在顶表面和限定在压板组件内的气室之间。 提供了具有大量抛光单元和残余抛光单元的系统。 残余抛光单元包括偏置的导电抛光表面。 在另外的实施方案中，保护导电元件免受过程化学物质的侵蚀。

公开(公告)号：WO2004087375A8

公开(公告)日：2004-12-09

申请号：PCT/US2004009535

申请日：2004-03-25

Applicant: NEOPAD TECHNOLOGIES CORP ,  MISRA SUDHANSHU ,  ROY PRADIP K

Inventor： MISRA SUDHANSHU ,  ROY PRADIP K

IPC: B24B37/04 ,  B24B49/02 ,  B24B53/007

CPC classification number: B24B53/017 ,  B24B37/042 ,  B24B37/20 ,  B24B49/02

Abstract: A polishing (102) pad for chemical mechanical planarization of a film on a substrate is customized by obtaining one or more characteristics of a structure on a substrate. For example, when the structure is a chip formed on a semiconductor wafer (104), the one or more characteristics of the structure can include chip size, pattern density, chip architecture, film material, film topography, and the like. Based on the one or more characteristics of the structure, a value for the one or more chemical or physical properties of the pad (102) is selected. For example, the one or more chemical or physical properties of the pad can include pad material hardness, thickness, surface grooving, pore size, porosity, Youngs modulus, compressibility, asperity, and the like.

Abstract translation: 通过在衬底上获得结构的一个或多个特性来定制用于衬底上的膜的化学机械平坦化的抛光垫（102）。 例如，当结构是形成在半导体晶片（104）上的芯片时，该结构的一个或多个特性可以包括芯片尺寸，图案密度，芯片结构，薄膜材料，薄膜形貌等。 基于结构的一个或多个特性，选择垫（102）的一种或多种化学或物理性质的值。 例如，衬垫的一种或多种化学或物理性质可以包括衬垫材料硬度，厚度，表面开槽，孔径，孔隙率，杨氏模量，可压缩性，粗糙度等。

公开(公告)号：WO03082519B1

公开(公告)日：2003-12-24

申请号：PCT/US0309329

申请日：2003-03-25

Applicant: THOMAS WEST INC ,  WEST THOMAS E ,  WU GUANGWEI ,  DIETZ DONALD P

Inventor： WEST THOMAS E ,  WU GUANGWEI ,  DIETZ DONALD P

IPC: B24B53/007 ,  B24B53/017 ,  B24B53/12 ,  B24D3/32 ,  B24D13/14 ,  B24B1/00

CPC classification number: B24B53/017 ,  B24B53/12 ,  B24D3/32

Abstract: Pad conditioners (15) and methods of conditioning pads for applications such as polishing substrates and chemical mechanical planarization of substrates are provided.

Abstract translation: 提供了垫调节器（15）和调节垫的方法，用于诸如抛光基板和基板的化学机械平面化的应用。

公开(公告)号：WO03002299A2

公开(公告)日：2003-01-09

申请号：PCT/US0220885

申请日：2002-07-01

Applicant: APPLIED MATERIALS INC

Inventor： TOLLES ROBERT D

IPC: B24B37/24 ,  B24B37/26 ,  B24B37/32 ,  B24B53/007 ,  B24B53/017 ,  B24D3/32 ,  B24D3/34 ,  B24D9/08 ,  B24D13/14 ,  B24B

CPC classification number: B24B37/24 ,  B24B37/26 ,  B24B37/32 ,  B24B53/017 ,  B24D3/32 ,  B24D3/344 ,  B24D9/08

Abstract: A material with a mesh of fibers and a binder material holding the fibers in the mesh can be used on a carrier head or a polishing pad. A polishing apparatus can include a pad cleaner with nozzles to direct jets of cleaning fluid onto the polishing pad and a brush to agitate a surface of the polishing pad.

Abstract translation: 可以在载体头或抛光垫上使用具有纤维网和将纤维保持在网中的粘合剂材料的材料。 抛光装置可以包括具有喷嘴以将清洁流体喷射到抛光垫上的喷嘴清洁器和刷子以搅动抛光垫的表面。

公开(公告)号：WO02103778A2

公开(公告)日：2002-12-27

申请号：PCT/US0219116

申请日：2002-06-17

Applicant: APPLIED MATERIALS INC

Inventor： SHANMUGASUNDRAM ARULKUMAR P ,  SCHWARM ALEXANDER T

IPC: B24B37/04 ,  B24B49/03 ,  B24B49/18 ,  B24B53/007 ,  G05B19/00 ,  G05B19/19 ,  G05B19/418 ,  H01L21/00 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/66

CPC classification number: B24B37/013 ,  B24B37/042 ,  B24B49/03 ,  B24B49/18 ,  B24B53/017 ,  G05B19/00 ,  G05B19/19 ,  G05B19/41865 ,  G05B2219/32053 ,  G05B2219/32065 ,  G05B2219/45031 ,  H01L21/31053 ,  H01L21/67253 ,  H01L21/67276 ,  H01L22/20 ,  Y02P90/14 ,  Y02P90/20 ,  Y02P90/22 ,  Y02P90/86

Abstract: A system, methods and mediums are provided for dynamic adjustment of sampling plans in connection with a wafer (or other device) to be measured. A sampling plan provides information on specific measure points within a die, a die being the section on the wafer that will eventually become a single chip after processing. There are specified points within the die that are candidates for measuring. The stored die map information may be retrieved and translated to determine the available points for measurement on the wafer. The invention adjusts the frequency and/or spatial resolution of measurements when one or more events occur that are likely to indicate an internal or external change affecting the manufacturing process or results. The increase in measurements and possible corresponding decrease in processing occur on an as-needed basis. The dynamic metrology plan adjusts the spatial resolution of sampling within-wafer by adding, subtracting or replacing candidate points from the sampling plan, in response to certain events which suggest that additional or different measurements of the wafer may be desirable. Where there are provided a number of candidate points in the die map in the area to which points are to be added, substracted, or replaced, the system can select among the points. Further, the invention may be used in connection with adjusting the frequency of wafer-to-wafer measurements.

Abstract translation: 提供了一种系统，方法和介质，用于与要测量的晶片（或其他设备）相关的采样计划的动态调整。 采样计划提供有关芯片内特定测量点的信息，芯片是晶片上最终将在处理后成为单个芯片的部分。 模具中有指定的点是测量的候选者。 存储的管芯地图信息可以被检索和转换以确定用于在晶片上进行测量的可用点。 当发生可能指示影响制造过程或结果的内部或外部变化的一个或多个事件时，本发明调整测量的频率和/或空间分辨率。 测量的增加和可能的相应的处理减少在需要的基础上发生。 动态计量计划通过根据某些事件增加，减去或替换采样计划中的候选点来调整晶片内采样的空间分辨率，这些事件表明可能需要对晶片进行额外或不同的测量。 如果在要添加，减少或替换点的区域中的模具图中提供了多个候选点，则系统可以在点之间进行选择。 此外，本发明可以与调整晶片到晶片测量的频率有关。

公开(公告)号：WO0216075A3

公开(公告)日：2002-08-15

申请号：PCT/US0122846

申请日：2001-07-19

Applicant: LAM RES CORP ,  SALDANA MIGUEL A ,  BOYD JOHN M ,  GOTKIS YEHIEL ,  OWCZARZ ALEKSANDER A

Inventor： SALDANA MIGUEL A ,  BOYD JOHN M ,  GOTKIS YEHIEL ,  OWCZARZ ALEKSANDER A

IPC: B24B37/20 ,  B24B53/007 ,  B24B53/017 ,  H01L21/304 ,  H01L21/306 ,  B24B37/04

CPC classification number: B24B37/20 ,  B24B53/017 ,  H01L21/30625

Abstract: A chemical mechanical polishing (CMP) system (200) is provided. A carrier (206) has a top surface and a bottom region. The top surface of the carrier is designed to hold and rotate a wafer (202) having a one or more formed layers to be prepared. A preparation head (208) is also included and is designed to be applied to at least a portion of the wafer (202) that is less than an entire portion of the surface of the wafer (202). Preferably, the preparation head (208) and the carrier (206) are configured to rotate in opposite directions. In addition, the preparation (208) head is further configured to oscillate while linearly moving from one of the direction of a center of the wafer (202) to an edge of the wafer (202) and from the edge of the wafer (202) to the center of the wafer(202). A support head (212) to support the top face of the wafer is also included, as well as a conditioning head (210).

Abstract translation: 提供化学机械抛光（CMP）系统（200）。 载体（206）具有顶表面和底部区域。 载体的顶表面被设计成保持和旋转具有一个或多个待制备的成形层的晶片（202）。 还包括准备头（208）并被设计成施加到小于晶片（202）的表面的整个部分的至少一部分晶片（202）。 优选地，制备头（208）和载体（206）构造成沿相反方向旋转。 此外，准备（208）头还被配置为在从晶片（202）的中心的方向之一到晶片（202）的边缘和晶片（202）的边缘之间线性移动的同时振荡， 到晶片（202）的中心。 还包括用于支撑晶片顶面的支撑头（212），以及调节头（210）。

公开(公告)号：WO02053320A2

公开(公告)日：2002-07-11

申请号：PCT/US2001/050769

申请日：2001-10-23

IPC: B24B9/06 ,  B24B37/013 ,  B24B37/04 ,  B24B37/30 ,  B24B49/02 ,  B24B49/12 ,  B24B53/007 ,  B24B53/017 ,  B24B57/02 ,  H01L21/687 ,  B24B5/00

CPC classification number: B24B37/30 ,  B24B9/065 ,  B24B37/013 ,  B24B37/04 ,  B24B37/042 ,  B24B49/02 ,  B24B49/12 ,  B24B53/017 ,  B24B57/02 ,  H01L21/68728

Abstract: The present invention provides an improved planarization apparatus for chemical mechanical planarization. In an exemplary embodiment, the invention provides an apparatus having a back support operatively coupled to the edge support, the bac support having at least one surface for supporting a back side of the object during planarization. The surface for supporting the back side provides a substantially friction free interface between the surface and the back side of the object to allow the object to move across the surface of the back support. In some embodiments, an edge support is movably coupled to an edge of an object for supporting and positioning the object during planarization.

Abstract translation: 本发明提供一种用于化学机械平面化的改进的平面化装置。 在一个示例性实施例中，本发明提供了一种具有可操作地耦合到边缘支撑件的背部支撑件的装置，所述杆支撑件具有用于在平坦化期间支撑物体的后侧的至少一个表面。 用于支撑背面的表面在物体的表面和背面之间提供基本上无摩擦的界面，以允许物体移动穿过背部支撑件的表面。 在一些实施例中，边缘支撑件可移动地联接到物体的边缘，用于在平坦化期间支撑和定位物体。

公开(公告)号：WO02028598A1

公开(公告)日：2002-04-11

申请号：PCT/US2001/031175

申请日：2001-09-28

IPC: B24B37/04 ,  B24B53/007 ,  B24D13/12 ,  B24D13/14 ,  B24B1/00

CPC classification number: B24B53/017 ,  B24B37/042 ,  B24D13/12 ,  B24D13/147

Abstract: A method for conditioning a polishing pad includes, pressing a conditioning surface of a conditioning pad comprising a first polymer against a polishing surface of the polishing pad comprising a second polymer, and producing relative motion between the pads such that measured characteristics of the polishing surface are changed.

Abstract translation: 用于调理抛光垫的方法包括：将包括第一聚合物的调理垫的调理表面压在抛光垫的抛光表面上，所述抛光表面包括第二聚合物，并且在所述垫之间产生相对运动，使得所述抛光表面的测量特征为 改变。