公开(公告)号：WO2014149128A1

公开(公告)日：2014-09-25

申请号：PCT/US2014/000024

申请日：2014-02-26

Applicant: APPLIED MATERIALS, INC.

Inventor： YOSHIDA, Naomi ,  BRAND, Adam

IPC: H01L21/336

CPC classification number: H01L29/785 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28194 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545

Abstract: The present invention relates to combinations of materials and fabrication techniques which are useful in the fabrication of filled, metal-comprising gates for use in planar and 3D Field Effect Transistor (FET) structures. The FET structures described are of the kind needed for improved performance in semiconductor device structures produced at manufacturing nodes which implement semiconductor feature sizes in the 15nm range or lower.

Abstract translation: 本发明涉及可用于制造用于平面和3D场效应晶体管（FET）结构的填充的含金属栅极的材料和制造技术的组合。 所描述的FET结构是在实现15nm或更低的半导体特征尺寸的制造节点处产生的半导体器件结构中改善性能所需要的。

公开(公告)号：WO2010056294A2

公开(公告)日：2010-05-20

申请号：PCT/US2009/006008

申请日：2009-11-05

Applicant: APPLIED MATERIALS, INC.

Inventor： SUN, Jennifer, Y. ,  DUAN, Ren-guan ,  COLLINS, Kenneth, S.

IPC: C04B41/85 ,  C04B41/81 ,  C04B41/45 ,  C04B35/553 ,  C04B35/01

CPC classification number: C03C10/16 ,  C03C3/247 ,  C03C3/325 ,  C03C8/24 ,  C03C2204/00 ,  C04B35/119 ,  C04B37/005 ,  C04B2235/3201 ,  C04B2235/3206 ,  C04B2235/3225 ,  C04B2235/445 ,  C04B2235/5445 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/80 ,  C04B2237/06 ,  C04B2237/064 ,  C04B2237/08 ,  C04B2237/10 ,  C04B2237/34 ,  C04B2237/343 ,  C04B2237/60 ,  C04B2237/708 ,  C04B2237/72 ,  H01L21/6719

Abstract: Embodiments of the invention relate to component structures which are useful as apparatus in plasma processing chambers. Portions of the component structures are bonded together using oxyfluoride-comprising glazes, glass ceramics, and combinations thereof. The bonding material is resistant to halogen-containing plasmas and exhibits desirable mechanical properties.

Abstract translation: 本发明的实施例涉及可用作等离子体处理室中的设备的组件结构。 使用含氟氧化物的釉料，玻璃陶瓷及其组合将部分组分结构粘合在一起。 该粘结材料耐含卤素等离子体并具有理想的机械性能。

公开(公告)号：WO2007041059A2

公开(公告)日：2007-04-12

申请号：PCT/US2006/037224

申请日：2006-09-25

Applicant: APPLIED MATERIALS, INC.

Inventor： JASINSKI, Thomas ,  WINKLER, Dieter ,  ECKES, William, A.

IPC: H01J1/50

CPC classification number: H01J37/141 ,  H01J2237/002

Abstract: We have developed a method and apparatus for cooling electromagnetic lens coils of the kind used in charged particle beams. The method and apparatus provide not only a symmetrical cooling effect around the optical axis of the charged particle beam, but also provide improved uniformity of heat transfer. This improved uniformity enables control over the optical axis of the charged particle beam within about 1 nm for high current charged particle beam columns, wherein the current ranges from about 100 nanoamps to about 1000 nanoamps. The use of a squat and wide electromagnetic lens coil in combination with an essentially flat modular cooling panel, which provides uniform cooling to the electromagnetic lens coil, not only enables control over the optical axis of the charged particle beam, but also provides mechanical stability for the charged particle beam column.

Abstract translation: 我们开发了一种用于冷却带电粒子束中使用的电磁透镜线圈的方法和装置。 该方法和装置不仅提供了带电粒子束的光轴周围的对称冷却效果，而且提供了改善的传热均匀性。 这种改进的均匀性使得能够对高电流带电粒子束柱控制带电粒子束的光轴在约1nm内，其中电流范围为约100纳安 - 约1000纳帕。 使用蹲式和宽电磁透镜线圈与基本上平坦的模块化冷却面板组合，其提供对电磁透镜线圈的均匀冷却，不仅能够控制带电粒子束的光轴，而且还提供机械稳定性 带电粒子束柱。

公开(公告)号：WO2006014612A2

公开(公告)日：2006-02-09

申请号：PCT/US2005/025528

申请日：2005-07-18

Applicant: APPLIED MATERIALS, INC.

Inventor： PARK, Beom, Soo ,  CHOI, Soo, Young ,  WON, Tae, Kyung ,  WHITE, John, M.

IPC: H01L21/469 ,  C23C16/00

CPC classification number: H01L21/0217 ,  C23C16/345 ,  C23C16/5096 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/3185 ,  H01L29/4908 ,  H01L29/66765

Abstract: We have discovered that adding H 2 to a precursor gas composition including SiH 4 , NH 3 , and N 2 is effective at improving the wet etch rate and the wet etch rate uniformity across the substrate surface off a-SiN x :H films which are deposited on a substrate by PECVD. Wet etch rate is an indication of film density. Typically, the lower the wet etch rate, the denser the film. The addition of H 2 to the SiH 4 / NH 3 / N 2 precursor gas composition did not significantly increase the variation in deposited film thickness across the surface of the substrate. The a-SiN x :H films described herein are particularly useful as TFT gate dielectrics in the production of flat panel displays. The uniformity of the film across the substrate enables the production of flat panel displays having surface areas of 25,000 cm 2 and larger.

Abstract translation: 我们已经发现，向包含SiH 4 N，NH 3和N 2的前体气体组合物中加入H 2 N 2， 在通过PECVD沉积在衬底上的衬底表面上改善湿蚀刻速率和湿蚀刻速率均匀性是有效的。 湿蚀刻速率是膜密度的指示。 通常，湿蚀刻速率越低，膜越致密。 向SiH 4 N 3 / NH 3 / N 2 N前体气体组合物中加入H 2 O没有显着增加 衬底表面沉积膜厚度的变化。 本文所述的a-SiN x X：H膜在制造平板显示器时特别适用于TFT栅极电介质。 跨过衬底的膜的均匀性使得能够生产具有25,000cm 2以上的表面积的平板显示器。

公开(公告)号：WO2005121396A2

公开(公告)日：2005-12-22

申请号：PCT/US2005/013214

申请日：2005-04-20

Applicant: APPLIED MICROSTRUCTURES, INC.

Inventor： KOBRIN, Boris ,  NOWAK, Romuald ,  YI, Richard, C. ,  CHINN, Jeffrey, D.

IPC: C23C16/00

CPC classification number: B82Y30/00 ,  C23C16/0227 ,  C23C16/402

Abstract: We have developed an improved vapor-phase deposition method and apparatus for the application of films / coatings on substrates. The method provides for the addition of a precise amount of each of the reactants to be consumed in a single reaction step of the coating formation process. In addition to the control over the amount of reactants added to the process chamber, the present invention requires precise control over the total pressure (which is less than atmospheric pressure) in the process chamber, the partial vapor pressure of each vaporous component present in the process chamber, the substrate temperature, and typically the temperature of a major processing surface within said process chamber. Control over this combination of variables determines a number of the characteristics of a film/coating or multi-layered film/coating formed using the method. By varying these process parameters, the roughness and the thickness of the films/coatings produced can be controlled.

Abstract translation: 我们已经开发了一种改进的气相沉积方法和装置，用于在基底上施加膜/涂层。 该方法提供在涂层形成过程的单个反应步骤中添加精确量的每种待消耗的反应物。 除了控制添加到处理室中的反应物的量之外，本发明需要精确控制处理室中的总压力（其小于大气压），存在于处理室中的每种气态组分的部分蒸气压 处理室，衬底温度以及典型地在所述处理室内的主处理表面的温度。 对这种变量组合的控制决定了使用该方法形成的膜/涂层或多层膜/涂层的许多特性。 通过改变这些工艺参数，可以控制所生产的膜/涂层的粗糙度和厚度。

公开(公告)号：WO2015026390A1

公开(公告)日：2015-02-26

申请号：PCT/US2014/000177

申请日：2014-08-07

Applicant: APPLIED MATERIALS, INC.

Inventor： MEBARKI, Bencherki ,  DAI, Huixiong ,  CHEN, Yongmei ,  REN, He ,  NAIK, Mehul

IPC: H01L21/768

CPC classification number: H01L21/76897 ,  H01L21/32139 ,  H01L21/76885 ,  H01L23/53257 ,  H01L23/53276 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming an interconnect structure for semiconductor or MEMS structures at a 10 nm Node (16 nm HPCD) down to 5 nm Node (7 nm HPCD), or lower, where the conductive contacts of the interconnect structure are fabricated using solely subtractive techniques applied to conformal layers of conductive materials.

Abstract translation: 在10nm节点（16nm HPCD）下至5nm节点（7nm HPCD）或更低的半导体或MEMS结构处形成互连结构的方法，其中互连结构的导电触点仅使用减法技术 应用于导电材料的保形层。

公开(公告)号：WO2014130004A1

公开(公告)日：2014-08-28

申请号：PCT/US2013/000047

申请日：2013-02-21

Applicant: KATZ, Marcella, Miriam

Inventor： KATZ, Marcella, Miriam

IPC: A43B23/00

CPC classification number: A43B23/24 ,  A43B3/105 ,  A43B3/242

Abstract: Zori style fashion shoes which hold a decorative insert. The zori straps are tubular in nature, with a transparent upper surface. An opening between the right and left straps enables the insertion of a decorative insert. A one piece decorative insert extends into the right strap and the left strap. The wearer of the shoe can remove and replace an insert with another of a different design. A transparent hook like tongue may extend from one strap to another, to protect the insert from soiling. Optionally, the straps may have a springy section of material applied at the end near the arch section of the shoe.

Abstract translation: 佐里风格的时尚鞋，其中装有镶嵌件。 蓝色皮带是管状的，具有透明的上表面。 右肩带和左肩带之间的开口可以插入装饰插入物。 一件装饰插入物延伸到右肩带和左肩带。 鞋的佩戴者可以用另一种不同的设计来移除和替换插入物。 透明的钩状舌状物可以从一个带延伸到另一个，以保护插入物不被污染。 可选地，带子可以具有在鞋的拱形部分附近端部施加的弹性部分材料。

公开(公告)号：WO2014031091A1

公开(公告)日：2014-02-27

申请号：PCT/US2012/000363

申请日：2012-08-20

Applicant: IN EDEN PROPERTIES, LLC (COMPANY) ,  KATZ, Marcella, Miriam

Inventor： KATZ, Marcella, Miriam

IPC: A43B23/24

CPC classification number: A43B23/24 ,  A43B1/0072 ,  A43B1/0081 ,  A43B3/0078

Abstract: The present invention relates to a shoe, including sandals, for men, women, and children, wherein the shoe includes a shoe display strip which traverses from an ankle strap of the shoe to a forefoot area of the shoe, along a centerline of a sole of the shoe, and wherein a top-facing surface of the shoe display strip includes a fashion design mounting base material which enables the attachment of at least one fashion design attachment. The fashion design attachment may be present in a pouch of showcase which is attached to the fashion design mounting base material, or may be attached directly to the fashion design mounting base material.

Abstract translation: 本发明涉及一种用于男士，女士和儿童的鞋，包括凉鞋，其中鞋包括穿过鞋的踝带到鞋的前脚掌区域的鞋展示条，沿着鞋底的中心线 并且其中所述鞋展示条的顶面表面包括能够附接至少一种时尚设计附件的时尚设计安装基底材料。 时尚设计附件可以存在于连接到时装设计安装基材的展示柜的小袋中，或者可以直接附接到时装设计安装基材。

公开(公告)号：WO2013180758A1

公开(公告)日：2013-12-05

申请号：PCT/US2013/000142

申请日：2013-05-24

Applicant: APPLIED MATERIALS, INC

Inventor： CHANG, Chorng-Ping ,  WOOD, Bingxi ,  PING, Er-Xuan

IPC: H01L21/8242 ,  H01L27/108

CPC classification number: H01L21/76889 ,  H01L21/743 ,  H01L23/498 ,  H01L27/10885 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of fabricating a self-aligned buried bit line in a structure which makes up a portion of a vertical channel DRAM. The materials and processes used enable self- alignment of elements of the buried bit line during the fabrication process. In addition, the materials and processes used enable for formation of individual DRAM cells which have a buried bit line width which is 16 nm or less.

Abstract translation: 在构成垂直通道DRAM的一部分的结构中制造自对准埋入位线的方法。 所使用的材料和工艺在制造过程中能够对埋入的位线的元件进行自对准。 此外，所使用的材料和工艺能够形成具有16nm或更小的掩埋位线宽度的各个DRAM单元。

公开(公告)号：WO2007041101A2

公开(公告)日：2007-04-12

申请号：PCT/US2006/037485

申请日：2006-09-26

Applicant: APPLIED MATERIALS, INC.

Inventor： BULLER, Benyamin ,  LOZES, Richard, L.

IPC: H01J37/302

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3026 ,  H01J2237/30488 ,  H01J2237/30494

Abstract: A beam exposure writing strategy method and system are disclosed for exposing a desired pattern on a substrate, by raster scanning a beam such as a particle beam, across a major field on the substrate. The beam is also vector scanned across a minor field of the substrate superimposed along the major field raster scan. The beam is selectively blanked and unblanked as the beam is being scanned. The unblanked flashes of the beam are modulated in coordination with the raster and vector scanning to expose the desired pattern on the substrate. The disclosed system and method generating an adjustable length microvector having a maximum range of at least about N time a nominal length λ, where N is equal to four and λ is substantially equal to a dimension of a nominal flash area, the nominal flash location dimension being substantially greater than a major field cell dimension.

Abstract translation: 公开了一种束曝光写入策略方法和系统，用于通过在衬底上的主场上光栅扫描诸如粒子束的光束来在衬底上暴露期望的图案。 光束也沿着主场光栅扫描叠加的衬底的次视场矢量扫描。 当光束被扫描时，光束被选择性地消隐并被取消闪烁。 与光栅和矢量扫描协调地调制光束的未闪烁闪光以暴露衬底上的期望图案。 所公开的系统和方法产生可调长度的微向量，其具有至少约N倍的标称长度α的最大范围，其中N等于4， 基本上等于标称闪光面积的尺寸，标称闪光位置尺寸基本上大于主场单元尺寸。