Abstract:
A picosecond laser beam shaping assembly is disclosed for shaping a picosecond laser beam for use in patterning (e.g., scribing) semiconductor devices. The assembly comprises a pulsed fibre laser source of picosecond laser pulses, a harmonic conversion element for converting laser pulses at a first laser wavelength having a first spectral bandwidth to laser pulses at a second laser wavelength having a second spectral bandwidth, and a beam shaping apparatus for shaping the laser beam at the second laser wavelength, the beam shaping apparatus having a spectral bandwidth that substantially corresponds to the second spectral bandwidth so as to produce a laser beam having a substantially rectangular cross-sectional profile.
Abstract:
Laser systems and methods for providing an output light beam having a target spatial pattern are provided. A light generating module generates an input light beam, whose spectral profile is then tailored by imposing thereon a controllable phase modulation. The obtained spectrally tailored light beam is dispersed, using at least one spatially- dispersive element to provide an output light beam having a spatial profile which is a function of the spectral profile of the spectrally tailored light beam, The phase modulation is selected in view of the spectral profile of the input light beam and of the dispersion characteristics of the at least one spatially-dispersive element so that the spatial pattern of the output light beam matches the target spatial pattern therefor.
Abstract:
Laser pulse shaping techniques produce tailored laser pulse spectral output (64, 66). The laser pulses can be programmed to have desired pulse widths and pulse shapes (such as sub-nanosecond to 10 ns 20 ns pulse widths with 1 ns to several nanoseconds leading edge rise times). Preferred embodiments are implemented with one or more electro-optical modulators (250, 254) receiving drive signals that selectively change the amount of incident pulsed laser emission (106, 112, 114) to form a tailored pulse output. Triggering the drive signal from the pulsed laser emission suppresses jitter associated with other stages of the link processing system and substantially removes jitter associated with pulsed laser emission build up time.
Abstract:
A laser beam switching system (50) employs a laser (52) coupled to a beam switching device (58) that causes a laser beam to switch between first and second beam positioning heads such that while the first beam positioning head (60) is directing the laser beam to process a workpiece target location, the second beam positioning head (62) is moving to another target location and vice versa. A preferred beam switching device includes first and second AOMs. When RF is applied to the first AOM (72), the laser beam is diffracted toward the first beam positioning head, and when RF is applied to the second AOM (74), the laser beam is diffracted toward the second beam positioning head. A workpiece processing system (120) employs a common modular imaged optics assembly (122) and an optional variable beam expander (94) for optically processing multiple laser beams.
Abstract:
Laser output including at least one laser pulse (32) having a wavelength greater than 1.1 µ m and shorter than 5 µ m (preferably at about 1.1 µ m) and having a pulsewidth shorter than 100 ps (preferably shorter than 10 ps) permits low -k dielectric material, such as SRO or SiCOH, to be removed without damaging the substrate. An oscillator module (12) in cooperation with an amplification module (16) are used to generate the laser output.
Abstract:
A laser pulse with a specially tailored temporal power profile, instead of a conventional temporal shape or substantially square shape, severs an IC link. The specially tailored laser pulse preferably has either an overshoot at the beginning of the laser pulse or a spike peak within the duration of the laser pulse. The timing of the spike peak is preferably set ahead of the time when the link is mostly removed. A specially tailored laser pulse power profile allows the use of a wider laser pulse energy range and shorter laser wavelengths, such as the green and UV, to sever the links without appreciable damage to the substrate and passivation structure material located on either side of and underlying the links.
Abstract:
A method comprising providing a layer structure for a photovoltaic device, the layer structure comprising an electrode, a light absorber comprising a layer of chalcopyrite-type semiconductor material, such as copper indium gallium diselenide, disposed on the electrode and a transparent electrode disposed on the light absorber. The method also comprises delivering a spatially-shaped picosecond pulsed laser beam so as to remove material from a region of the transparent electrode so as to expose at least a portion of the light absorber.
Abstract:
A method comprising providing a layer structure for a photovoltaic device, the layer structure comprising an electrode, a light absorber comprising a layer of chalcopyrite-type semiconductor material, such as copper indium gallium diselenide, disposed on the electrode and a transparent electrode disposed on the light absorber. The method also comprises delivering a spatially-shaped picosecond pulsed laser beam so as to remove material from a region of the transparent electrode so as to expose at least a portion of the light absorber.
Abstract:
Processing a workpiece with a laser includes generating laser pulses at a first pulse repetition frequency. The first pulse repetition frequency provides reference timing for coordination of a beam positioning system and one or more cooperating beam position compensation elements to align beam delivery coordinates relative to the workpiece. The method also includes, at a second pulse repetition frequency that is lower than the first pulse repetition frequency, selectively amplifying a subset of the laser pulses. The selection of the laser pulses included in the subset is based on the first pulse repetition frequency and position data received from the beam positioning system. The method further includes adjusting the beam delivery coordinates using the one or more cooperating beam position compensation elements so as to direct the amplified laser pulses to selected targets on the workpiece.
Abstract:
Methods and systems process electrically conductive links on or within a semiconductor substrate (740) using multiple laser beams. For example, a method utilizes N series of laser pulses to obtain a throughput benefit, wherein N = 2. The links are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. The N series of laser pulses propagate along N respective beam axes until incident upon selected links. The pattern of resulting laser spots may be on links in N distinct rows, on distinct links in the same row, or on the same link, either partially or completely overlapping. The resulting laser spots may be offset from one another in the lengthwise direction of the rows or offset from one another in a direction perpendicular to the lengthwise direction of the rows, or both.