Abstract:
A physically unclonable function circuit (PUF) is used to generate a fingerprint value based on the uniqueness of the physical characteristics (e.g., resistance, capacitance, connectivity, etc.) of a tamper prevention (i.e., shielding) structure that includes through-silicon vias and metallization on the backside of the integrated circuit. The physical characteristics depend on random physical factors introduced during manufacturing. This causes the chip-to-chip variations in these physical characteristics to be unpredictable and uncontrollable which makes more difficult to duplicate, clone, or modify the structure without changing the fingerprint value. By including the through-silicon vias and metallization on the backside of the integrated circuit as part of the PUF, the backside of the chip can be protected from modifications that can be used to help learn the secure cryptographic keys and/or circumvent the secure cryptographic (or other) circuitry.
Abstract:
In one embodiment, a pulsed signaling multiplexer is described that comprises a first AC-coupled transmitter and a second AC-coupled transmitter. The first AC-coupled transmitter includes a first driver having a first input to receive first data and a first output. A first AC-coupling element couples the first output to a common output node. The second AC-coupled transmitter includes a second driver having a second input to receive second data, and a second output. A second AC-coupling element couples the second output to the same first common output node.
Abstract:
Self-timed interfaces and methods are provided for interfacing different timing domains. These self-timed interfaces receive a strobe signal from a component operating under a first clock domain. A first signal path of the self-timed interface couples the strobe signal to a receiver that samples data of data line under control of the strobe signal. A second signal path of the self-timed interface couples the strobe signal to an interface circuit through a hysteresis-based element. The interface circuit, under control of an output of the hysteresis-based element along with a clock signal that originates under a second clock domain, generates an interface enable signal for use in controlling data transfers between the different clock domains.
Abstract:
A semiconductor package is disclosed. The package comprises a substrate having terminals for external connections and respective first and second semiconductor chips. The first semiconductor chip has pads coupled to respective ones of the terminals and includes a metal layer. The second semiconductor chip is attached to the first semiconductor chip and has first contacts electrically coupled to respective ones of the pads through the metal layer. The second semiconductor chip overlying an area of the first semiconductor chip that is less than a surface area occupied by the pads.
Abstract:
A memory system includes a memory controller coupled to multiple memory devices. Each memory device includes an oscillator that generates an internal reference signal that oscillates at a frequency that is a function of physical device structures within the memory device. The frequencies of the internal reference signals are thus device specific. Each memory device develops a shared reference signal from its internal reference signal and communicates the shared reference signal to the common memory controller. The memory controller uses the shared reference signals to recover device-specific frequency information from each memory device, and then communicates with each memory device at a frequency compatible with the corresponding internal reference signal.
Abstract:
The semiconductor device system includes multiple stacked substantially identical semiconductor devices each including a first side and an opposing second side. First and second pads are disposed at the first side of the semiconductor device, while third and fourth pads are disposed at the second side of the semiconductor device. First interface circuit is electrically coupled to the first pad and the third pad, while second interface circuit is electrically coupled to the second pad and the fourth pad. The second interface circuit is separate and distinct from the first interface circuit. At least one first semiconductor device of the multiple semiconductor devices is offset from other of the multiple semiconductor devices such that the fourth pad on the first semiconductor device is aligned with, and electrically connected to, the first pad on an adjacent one of the multiple semiconductor devices. In some embodiments, the first pad is associated with a first capacitance, while the second pad is associated with a second capacitance that is smaller than the first capacitance.
Abstract:
A communication channel includes a first component having a transmitter coupled to a normal signal source, and a second component having a receiver coupled to a normal signal destination. A communication link couples the first and second components. Calibration logic provides for setting an operation value for a parameter of the communication channel, such as by executing an exhaustive calibration sequence at initialization of the link. A tracking circuit, including a monitoring function, tracks drift in the parameter by monitoring a feedback signal that has a characteristic that correlates with drift in the communication channel, and updates, or indicates the need for updating of, the operation value of the parameter in response to the monitoring function.
Abstract:
A first timing reference signal and a second timing reference signal are sent to a memory device. The second timing reference signal has approximately a quadrature phase relationship with respect to the first timing reference signal. A plurality of serial data patterns are received from the memory device. The transitions of the first timing reference and the second timing reference determining when transitions occur between the bits of the plurality of data patterns. Timing indicators associated with when received transitions occur between the bits of the plurality of data patterns are received from the memory device. The timing indicators are each measured using a single sampler. Based on the timing indicators, a first duty cycle adjustment for the first timing reference signal, a second duty cycle adjustment for the second timing reference signal, and a quadrature phase adjustment are determined and applied.
Abstract:
A first timing reference signal and a second timing reference signal are sent to a memory device. The second timing reference signal has approximately a quadrature phase relationship with respect to the first timing reference signal. A plurality of serial data patterns are received from the memory device. The transitions of the first timing reference and the second timing reference determining when transitions occur between the bits of the plurality of data patterns. Timing indicators associated with when received transitions occur between the bits of the plurality of data patterns are received from the memory device. The timing indicators are each measured using a single sampler. Based on the timing indicators, a first duty cycle adjustment for the first timing reference signal, a second duty cycle adjustment for the second timing reference signal, and a quadrature phase adjustment are determined and applied.
Abstract:
The semiconductor device system includes multiple stacked substantially identical semiconductor devices each including a first side and an opposing second side. First and second pads are disposed at the first side of the semiconductor device, while third and fourth pads are disposed at the second side of the semiconductor device. First interface circuit is electrically coupled to the first pad and the third pad, while second interface circuit is electrically coupled to the second pad and the fourth pad. The second interface circuit is separate and distinct from the first interface circuit. At least one first semiconductor device of the multiple semiconductor devices is offset from other of the multiple semiconductor devices such that the fourth pad on the first semiconductor device is aligned with, and electrically connected to, the first pad on an adjacent one of the multiple semiconductor devices. In some embodiments, the first pad is associated with a first capacitance, while the second pad is associated with a second capacitance that is smaller than the first capacitance.