公开(公告)号：WO2013040652A1

公开(公告)日：2013-03-28

申请号：PCT/AU2012/001143

申请日：2012-09-21

Applicant: THE SILANNA GROUP PTY LTD ,  TENG, Annette ,  DUVALL, Steven, Grant

Inventor： TENG, Annette ,  DUVALL, Steven, Grant

IPC: F21V15/01 ,  H01L27/15

CPC classification number: H01L25/0753 ,  F21Y2107/00 ,  F21Y2115/10 ,  H01L25/167 ,  H01L25/18 ,  H01L25/50 ,  H01L33/62 ,  H01L33/648 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light source assembly, including one or more light emitting diodes disposed within a hermetically sealed enclosure, wherein the light emitting diodes are in the form of one or more unpackaged planar semiconductor dies mounted on an inner surface of a wall of the enclosure, wherein the wall of the enclosure includes electrically conductive tracks that connect electrical contacts of the unpackaged planar semiconductor dies to corresponding electrical contacts external of the sealed enclosure.

Abstract translation: 一种光源组件，包括设置在密封外壳内的一个或多个发光二极管，其中所述发光二极管是安装在所述外壳的壁的内表面上的一个或多个未封装的平面半导体管芯的形式，其中， 外壳的壁包括将未封装的平面半导体管芯的电触点连接到密封外壳外部的对应电触头的导电轨道。

公开(公告)号：WO2012065229A1

公开(公告)日：2012-05-24

申请号：PCT/AU2011/001497

申请日：2011-11-18

Applicant: THE SILANNA GROUP PTY LTD ,  MOGHE, Yashodhan, Vijay ,  TERRY, Andrew ,  READ, Andrew, James ,  DUVALL, Steven, Grant

Inventor： MOGHE, Yashodhan, Vijay ,  TERRY, Andrew ,  READ, Andrew, James ,  DUVALL, Steven, Grant

IPC: H01L27/00 ,  H01L23/52

CPC classification number: H01L27/0292 ,  H01L23/48 ,  H01L23/5222 ,  H01L23/5223 ,  H01L23/60 ,  H01L27/0207 ,  H01L27/0248 ,  H01L27/0255 ,  H01L27/0629 ,  H01L28/40 ,  H01L29/0607 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: An integrated circuit, including at least two integrated circuit portions mutually spaced on a single electrically insulating die and at least one coupling region on the die to provide capacitive coupling between the otherwise mutually isolated integrated circuit portions, the integrated circuit portions being formed by a plurality of layers on the single die, the layers including metal and dielectric layers and at least one semiconductor layer; wherein at least one of the dielectric layers extends from the integrated circuit portions across the coupling region and at least a corresponding one of the metal layers and/or at least one semiconductor layer extends from each of the integrated circuit portions and partially across the coupling region to form capacitors therein and thereby provide the capacitive coupling between the integrated circuit portions.

Abstract translation: 一种集成电路，包括在单个电绝缘管芯上相互间隔开的至少两个集成电路部分和管芯上的至少一个耦合区域，以在另外相互隔离的集成电路部分之间提供电容耦合，所述集成电路部分由多个 层，包括金属和介电层以及至少一个半导体层; 其中所述电介质层中的至少一个从所述集成电路部分延伸穿过所述耦合区域，并且所述金属层中的至少一个和/或至少一个半导体层从所述集成电路部分中的每一个延伸并部分地跨过所述耦合区域 以在其中形成电容器，从而提供集成电路部分之间的电容耦合。

公开(公告)号：WO2009158551A3

公开(公告)日：2009-12-30

申请号：PCT/US2009/048736

申请日：2009-06-26

Applicant: CARBEN SEMICON LIMITED ,  DUVALL, Steven Grant ,  KHOKHLOV, Pavel ,  LAZAREV, Pavel I.

Inventor： DUVALL, Steven Grant ,  KHOKHLOV, Pavel ,  LAZAREV, Pavel I.

IPC: H03K19/094 ,  B82B1/00

Abstract: An integrated circuit (IC) includes an interconnect system made of electrically conducting ribtan material. The integrated circuit includes a substrate, a set of circuit elements that are formed on the substrate, an interconnect system that interconnects the circuit elements. At least part of the interconnect system is made of a metallic ribtan material.

公开(公告)号：WO2009158552A1

公开(公告)日：2009-12-30

申请号：PCT/US2009/048737

申请日：2009-06-26

Applicant: CARBEN SEMICON LIMITED ,  DUVALL, Steven, Grant ,  KHOKHLOV, Pavel ,  LAZAREV, Pavel, I.

Inventor： DUVALL, Steven, Grant ,  KHOKHLOV, Pavel ,  LAZAREV, Pavel, I.

IPC: H01L21/461

CPC classification number: H01L21/288 ,  H01L21/76838 ,  H01L23/53276 ,  H01L29/1606 ,  H01L51/0023 ,  H01L51/0026 ,  H01L51/0053 ,  H01L51/0056 ,  H01L51/0512 ,  H01L51/102 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention relates generally to the field of integrated electronics. More specifically, the present invention relates to patterned graphene-like carbon-based integrated circuits and methods of production thereof. Methods of photo-, electron-beam projection, extreme-ultraviolet, and imprint lithographic patterning and also several thermal patterning methods are disclosed in the present invention.

Abstract translation: 本发明一般涉及集成电子领域。 更具体地，本发明涉及图案化的石墨烯类碳基集成电路及其制造方法。 在本发明中公开了光电子束投射，极紫外和压印光刻图案的方法以及几种热图案化方法。

公开(公告)号：WO2009101449A3

公开(公告)日：2009-10-15

申请号：PCT/GB2009050146

申请日：2009-02-16

Applicant: CARBEN SEMICON LTD ,  DUVALL STEVEN GRANT ,  KHOKHLOV PAVEL ,  LAZAREV PAVEL

Inventor： DUVALL STEVEN GRANT ,  KHOKHLOV PAVEL ,  LAZAREV PAVEL

IPC: H01L51/30

CPC classification number: H01L51/0003 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/1606 ,  H01L29/7781 ,  H01L29/78684 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0558

Abstract: The present invention relates to a thin-film transistor which comprises a conductive and predominantly continuous carbon-based layer (3) comprising predominantly planar graphene-like structures. The graphene-like structures may be in the following various forms: planar graphene-like nanoribbons oriented predominantly perpendicularly to the carbon-based layer surface or planar graphene-like sheets oriented predominantly parallel to the carbon-based layer surface. The carbon-based layer thickness is in the range from approximately 1 to 1000 nm.

Abstract translation: 本发明涉及一种薄膜晶体管，其包括主要包括平面石墨烯状结构的导电且主要连续的碳基层（3）。 石墨烯样结构可以具有以下各种形式：主要垂直于碳基层表面取向的平面石墨烯样纳米带或主要平行于碳基层表面取向的平面石墨烯样片。 碳基层厚度在约1至1000nm的范围内。

公开(公告)号：WO2010121309A1

公开(公告)日：2010-10-28

申请号：PCT/AU2010/000453

申请日：2010-04-21

Applicant: ATANACKOVIC, Petar, Branko ,  DUVALL, Steven, Grant

Inventor： ATANACKOVIC, Petar, Branko ,  DUVALL, Steven, Grant

IPC: H01L31/0352 ,  H01L27/142 ,  H01L31/078

CPC classification number: H01L31/068 ,  H01L31/022441 ,  H01L31/028 ,  H01L31/03921 ,  H01L31/042 ,  H01L31/047 ,  H01L31/0475 ,  H01L31/0508 ,  H01L31/056 ,  H01L31/0682 ,  H01L31/075 ,  H01L31/1804 ,  H01L31/202 ,  H01L31/208 ,  Y02E10/52 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

Abstract: An optoelectronic device, including a semiconductor body having a surface to receive photons and a plurality of doped regions of opposite doping polarities, the doped regions extending substantially from the surface of the semiconductor body and into the semiconductor body, and being arranged in one or more pairs of opposite doping polarities such that each pair of doped regions forms a corresponding space charge region having a corresponding electric field therein, the space charge region extending substantially from the surface of the semiconductor body and into the semiconductor body such that photons entering the semiconductor body through the surface and travelling along paths within the space charge region generate electron-hole pairs in the space charge region that are separated in opposing directions substantially orthogonal to the photon paths by the electric field and collected by the corresponding pair of doped regions, thereby providing an electrical current to be conducted from the device.

Abstract translation: 一种光电器件，包括具有接收光子的表面和具有相反掺杂极性的多个掺杂区域的半导体本体，所述掺杂区域基本上从半导体本体的表面延伸并进入半导体本体，并被布置在一个或多个 成对的相反掺杂极性使得每对掺杂区域形成在其中具有相应电场的相应的空间电荷区域，空间电荷区域基本上从半导体本体的表面延伸并进入半导体本体，使得进入半导体体的光子 通过该表面并且沿着空间电荷区域内的路径行进，在空间电荷区域中产生电子 - 空穴对，该空间电荷区域通过电场在与光子路径基本正交的相反方向上分离并由相应的一对掺杂区域收集，从而提供 要进行的电流 从设备。

公开(公告)号：WO2009158551A2

公开(公告)日：2009-12-30

申请号：PCT/US2009048736

申请日：2009-06-26

Applicant: CARBEN SEMICON LTD ,  DUVALL STEVEN GRANT ,  KHOKHLOV PAVEL ,  LAZAREV PAVEL I

Inventor： DUVALL STEVEN GRANT ,  KHOKHLOV PAVEL ,  LAZAREV PAVEL I

IPC: H01L51/30

CPC classification number: H01L21/76838 ,  H01L21/288 ,  H01L23/53276 ,  H01L51/0026 ,  H01L51/0053 ,  H01L51/0055 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

Abstract: An integrated circuit (IC) includes an interconnect system made of electrically conducting ribtan material. The integrated circuit includes a substrate, a set of circuit elements that are formed on the substrate, an interconnect system that interconnects the circuit elements. At least part of the interconnect system is made of a metallic ribtan material.

Abstract translation: 集成电路（IC）包括由导电肋条材料制成的互连系统。 集成电路包括基板，形成在基板上的一组电路元件，互连电路元件的互连系统。 互连系统的至少一部分由金属肋条材料制成。

公开(公告)号：WO2009101449A2

公开(公告)日：2009-08-20

申请号：PCT/GB2009/050146

申请日：2009-02-16

Applicant: CARBEN SEMICON LIMITED ,  DUVALL, Steven Grant ,  KHOKHLOV, Pavel ,  LAZAREV, Pavel

Inventor： DUVALL, Steven Grant ,  KHOKHLOV, Pavel ,  LAZAREV, Pavel

IPC: H01L51/30

CPC classification number: H01L51/0003 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/1606 ,  H01L29/7781 ,  H01L29/78684 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0558

Abstract: The present invention relates to a thin-film transistor which comprises a conductive and predominantly continuous carbon-based layer (3) comprising predominantly planar graphene-like structures. The graphene-like structures may be in the following various forms: planar graphene-like nanoribbons oriented predominantly perpendicularly to the carbon-based layer surface or planar graphene-like sheets oriented predominantly parallel to the carbon-based layer surface. The carbon-based layer thickness is in the range from approximately 1 to 1000 nm.

Abstract translation: 薄膜晶体管本发明涉及一种薄膜晶体管，其包括导电且主要连续的碳基层（3），其主要包括平面的石墨烯结构。 石墨烯结构可以具有以下各种形式：主要垂直于碳基层表面取向的平面石墨烯纳米带或主要平行于碳基层表面取向的平板状石墨烯片。 碳基层厚度在约1〜1000nm的范围内。