公开(公告)号：WO2013106050A3

公开(公告)日：2013-10-03

申请号：PCT/US2012032788

申请日：2012-04-09

Applicant: TEXAS INSTRUMENTS INC ,  TEXAS INSTRUMENTS JAPAN ,  HERBSOMMER JUAN A ,  LOPEZ OSVALDO J ,  NOQUIL JONATHAN A

Inventor： HERBSOMMER JUAN A ,  LOPEZ OSVALDO J ,  NOQUIL JONATHAN A

IPC: H01L23/495 ,  H01L23/492

CPC classification number: H01L21/4825 ,  H01L21/563 ,  H01L23/3107 ,  H01L23/49537 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/19 ,  H01L24/20 ,  H01L24/27 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L2224/2101 ,  H01L2224/211 ,  H01L2224/215 ,  H01L2224/2732 ,  H01L2224/291 ,  H01L2224/29193 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32104 ,  H01L2224/32227 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/83192 ,  H01L2224/838 ,  H01L2224/83815 ,  H01L2224/83851 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/01028 ,  H01L2924/00

Abstract: A packaged power transistor device (100) having a leadframe including a flat plate (110) and a coplanar flat strip (120) spaced from the plate, the plate having a first thickness (110a) and the strip having a second thickness (120a) smaller than the first thickness, the plate and the strip having terminals (212; 121a). A field-effect power transistor chip (210) having a third thickness (210a), a first and a second contact pad on one chip side, and a third contact pad (211) on the opposite chip side, the first pad being attached to the plate, the second pad being attached to the strip, and the third pad being coplanar with the terminals. Encapsulation compound (130) filling the thickness difference between plate and strip, and spaces between chip and terminals, wherein the compound has a surface (101) coplanar with the plate surface (111) and the opposite surface (102) coplanar with the third pad (211) and the terminals (212; 212a), the distance (104) between the surfaces being equal to the sum of the first (110a) and third (210a) thicknesses.

Abstract translation: 一种具有引线框架的封装功率晶体管器件（100），所述引线框架包括平板（110）和与所述板隔开的共面平带（120），所述平板具有第一厚度（110a）并且所述带具有第二厚度（120a） 小于第一厚度，板和带具有端子（212; 121a）。 一种场效应功率晶体管芯片（210），具有第三厚度（210a），在一个芯片侧上的第一和第二接触焊盘以及在相反芯片侧上的第三接触焊盘（211），第一焊盘附着到 所述板，所述第二衬垫附接到所述条带，并且所述第三衬垫与所述端子共面。 封装化合物（130）填充板和条之间的厚度差以及芯片和端子之间的空间，其中该化合物具有与板表面（111）共面的表面（101）和与第三焊盘共面的相对表面（102） （211）和端子（212; 212a）之间，表面之间的距离（104）等于第一（110a）和第三（210a）厚度的总和。

公开(公告)号：WO2013106050A2

公开(公告)日：2013-07-18

申请号：PCT/US2012/032788

申请日：2012-04-09

Applicant: TEXAS INSTRUMENTS INCORPORATED ,  TEXAS INSTRUMENTS JAPAN LIMITED ,  HERBSOMMER, Juan, A. ,  LOPEZ, Osvaldo, J. ,  NOQUIL, Jonathan, A.

Inventor： HERBSOMMER, Juan, A. ,  LOPEZ, Osvaldo, J. ,  NOQUIL, Jonathan, A.

IPC: H01L23/495 ,  H01L23/492

CPC classification number: H01L21/4825 ,  H01L21/563 ,  H01L23/3107 ,  H01L23/49537 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/19 ,  H01L24/20 ,  H01L24/27 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L2224/2101 ,  H01L2224/211 ,  H01L2224/215 ,  H01L2224/2732 ,  H01L2224/291 ,  H01L2224/29193 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32104 ,  H01L2224/32227 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/83192 ,  H01L2224/838 ,  H01L2224/83815 ,  H01L2224/83851 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/01028 ,  H01L2924/00

Abstract: A packaged power transistor device (100) having a leadframe including a flat plate (110) and a coplanar flat strip (120) spaced from the plate, the plate having a first thickness (110a) and the strip having a second thickness (120a) smaller than the first thickness, the plate and the strip having terminals (212; 121a). A field-effect power transistor chip (210) having a third thickness (210a), a first and a second contact pad on one chip side, and a third contact pad (211) on the opposite chip side, the first pad being attached to the plate, the second pad being attached to the strip, and the third pad being coplanar with the terminals. Encapsulation compound (130) filling the thickness difference between plate and strip, and spaces between chip and terminals, wherein the compound has a surface (101) coplanar with the plate surface (111) and the opposite surface (102) coplanar with the third pad (211) and the terminals (212; 212a), the distance (104) between the surfaces being equal to the sum of the first (110a) and third (210a) thicknesses.

Abstract translation: 一种封装的功率晶体管器件（100），其具有包括平板（110）和与所述板间隔开的共面平坦条（120）的引线框架，所述板具有第一厚度（110a），并且所述带具有第二厚度（120a） 小于第一厚度，板和带具有端子（212; 121a）。 具有第三厚度（210a），一个芯片侧的第一和第二接触焊盘和相对的芯片侧的第三接触焊盘（211）的场效应晶体管芯片（210），所述第一焊盘附接到 所述板，所述第二垫附接到所述条，并且所述第三垫与所述端子共面。 填充板和条带之间的厚度差以及芯片和端子之间的空间的封装化合物（130），其中所述化合物具有与所述板表面（111）共面的表面（101）和与所述第三焊盘共面的相对表面（102） （211）和端子（212; 212a）之间，表面之间的距离（104）等于第一（110a）和第三（210a）厚度之和。

公开(公告)号：WO2012109265A3

公开(公告)日：2012-11-01

申请号：PCT/US2012024171

申请日：2012-02-07

Applicant: TEXAS INSTRUMENTS INC ,  TEXAS INSTRUMENTS JAPAN ,  HERBSOMMER JUAN A ,  LOPEZ OSVALDO J ,  NOQUIL JONATHAN A

Inventor： HERBSOMMER JUAN A ,  LOPEZ OSVALDO J ,  NOQUIL JONATHAN A

IPC: H01L25/18 ,  H01L23/48 ,  H01L23/52

CPC classification number: H01L23/49524 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73221 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3011 ,  H02M3/1588 ,  Y02B70/1466 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A high frequency power supply module (800) of a synchronous Buck converter having the control die (810) directly soldered drain-down to the pad (801) of a leadframe; pad (801) is connected to VIN and the VIN connection to control die (810) exhibits vanishing impedance and inductance, thus reducing the amplitude and duration of switch node voltage ringing by more than 90 %. Consequently, the input current enters the control die terminal vertically from the pad. The switch node clip (840), topping the control die (810), is designed with an area large enough to place the sync die (820) drain-down on top of the control die; the current continues to flow vertically through the converter stack. The active area of the sync die is equal to or greater than the active area of the control die; the physical area of the sync die is equal to or greater than the physical area of the control die. The source terminal of sync die (820) is connected to ground by clip (860) designed to act as a heat spreader.

Abstract translation: 具有控制管芯（810）的同步降压转换器的高频电源模块（800）直接焊接到引线框架的焊盘（801）上; 焊盘801连接到VIN，并且VIN连接到控制管芯810展现出消失的阻抗和电感，因此将开关节点电压振铃的幅度和持续时间减少了90％以上。 因此，输入电流从焊盘垂直进入控制芯片端子。 顶置控制管芯（810）的开关节点夹（840）被设计为具有足够大的面积以将同步管芯（820）放置在控制管芯的顶部上; 电流继续垂直流过转换器堆栈。 同步芯片的有效面积等于或大于控制芯片的有效面积; 同步芯片的物理面积等于或大于控制芯片的物理面积。 同步管芯（820）的源极端子通过设计用作散热器的夹子（860）接地。

公开(公告)号：WO2012109265A2

公开(公告)日：2012-08-16

申请号：PCT/US2012/024171

申请日：2012-02-07

Applicant: TEXAS INSTRUMENTS INCORPORATED ,  TEXAS INSTRUMENTS JAPAN LIMITED ,  HERBSOMMER, Juan, A. ,  LOPEZ, Osvaldo, J. ,  NOQUIL, Jonathan, A.

Inventor： HERBSOMMER, Juan, A. ,  LOPEZ, Osvaldo, J. ,  NOQUIL, Jonathan, A.

IPC: H01L25/18 ,  H01L23/48 ,  H01L23/52

CPC classification number: H01L23/49524 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73221 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3011 ,  H02M3/1588 ,  Y02B70/1466 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A high frequency power supply module (800) of a synchronous Buck converter having the control die (810) directly soldered drain-down to the pad (801) of a leadframe; pad (801) is connected to V IN and the V IN connection to control die (810) exhibits vanishing impedance and inductance, thus reducing the amplitude and duration of switch node voltage ringing by more than 90 %. Consequently, the input current enters the control die terminal vertically from the pad. The switch node clip (840), topping the control die (810), is designed with an area large enough to place the sync die (820) drain-down on top of the control die; the current continues to flow vertically through the converter stack. The active area of the sync die is equal to or greater than the active area of the control die; the physical area of the sync die is equal to or greater than the physical area of the control die. The source terminal of sync die (820) is connected to ground by clip (860) designed to act as a heat spreader.

Abstract translation: 具有控制管芯（810）的同步降压转换器的高频电源模块（800）直接焊接到引线框的焊盘（801）; 焊盘（801）连接到VIN，与控制管芯（810）的VIN连接呈现消失的阻抗和电感，从而将开关节点电压振铃的幅度和持续时间降低了90％以上。 因此，输入电流从焊盘垂直地进入控制管芯端子。 将控制管芯（810）顶起的开关节点夹（840）被设计成具有足够大的面积以将同步管芯（820）排放到控制管芯的顶部上; 电流继续通过转换器堆栈垂直流动。 同步管芯的有效面积等于或大于控制管芯的有效面积; 同步管芯的物理面积等于或大于控制管芯的物理面积。 同步模具（820）的源极端子通过设计成用作散热器的夹子（860）连接到地面。