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    METAL DEPOSITION
    2.
    发明申请
    METAL DEPOSITION 审中-公开
    金属沉积

    公开(公告)号：WO2011059769A1

    公开(公告)日：2011-05-19

    申请号：PCT/US2010/054563

    申请日：2010-10-28

    申请人： SHOCKING TECHNOLOGIES, INC. ,  KOSOWSKY, Lex

    发明人： KOSOWSKY, Lex

    IPC分类号： C25D5/48

    CPC分类号： C25D5/022 ,  C25D5/54 ,  H05K1/0254 ,  H05K1/0373 ,  H05K1/167 ,  H05K3/107 ,  H05K3/188 ,  H05K3/388 ,  H05K3/423 ,  H05K3/426 ,  H05K2201/0215 ,  H05K2201/0738 ,  H05K2203/105

    摘要： Systems and methods include depositing one or more materials on a voltage switchable dielectric material. In certain aspects, a voltage switchable dielectric material is disposed on a conductive backplane. In some embodiments, a voltage switchable dielectric material includes regions having different characteristic voltages associated with deposition thereon. Some embodiments include masking, and may include the use of a removable contact mask. Certain embodiments include electrografting. Some embodiments include an intermediate layer disposed between two layers.

    摘要翻译： 系统和方法包括在可开关电介质材料上沉积一种或多种材料。 在某些方面，电压可切换介电材料设置在导电背板上。 在一些实施例中，电压可切换介电材料包括具有与其上沉积相关联的不同特征电压的区域。 一些实施例包括掩蔽，并且可以包括使用可移除的接触掩模。 某些实施例包括电驱动。 一些实施例包括设置在两层之间的中间层。

    SUBSTRATE DEVICE OR PACKAGE USING EMBEDDED LAYER OF VOLTAGE SWITCHABLE DIELECTRIC MATERIAL IN A VERTICAL SWITCHING CONFIGURATION
    4.
    发明申请
    SUBSTRATE DEVICE OR PACKAGE USING EMBEDDED LAYER OF VOLTAGE SWITCHABLE DIELECTRIC MATERIAL IN A VERTICAL SWITCHING CONFIGURATION 审中-公开
    在垂直切换配置中使用电压可切换介质材料的嵌入层的衬底器件或封装

    公开(公告)号：WO2009129188A1

    公开(公告)日：2009-10-22

    申请号：PCT/US2009/040384

    申请日：2009-04-13

    申请人： SHOCKING TECHNOLOGIES, INC. ,  KOSOWSKY, Lex ,  FLEMING, Robert ,  GRAYDON, Bhret

    发明人： KOSOWSKY, Lex ,  FLEMING, Robert ,  GRAYDON, Bhret

    IPC分类号： H05K1/02

    CPC分类号： H05K1/0257 ,  H05K1/0259 ,  H05K1/0373 ,  H05K2201/0738 ,  H05K2203/105

    摘要： A substrate device includes an embedded layer of VSD material (230) that overlays a conductive element or layer (240) to provide a ground. An electrode (210), connected to circuit elements that are to be protected, extends into the thickness of the substrate to make contact with the VSD layer. When the circuit elements are operated under normal voltages, the VSD layer is dielectric and not connected to ground. When a transient electrical event occurs on the circuit elements, the VSD layer switches instantly to a conductive state, so that the first electrode is connected to ground.

    摘要翻译： 衬底器件包括覆盖导电元件或层（240）以提供接地的VSD材料（230）的嵌入层。 连接到要被保护的电路元件的电极（210）延伸到基板的厚度以与VSD层接触。 当电路元件在正常电压下工作时，VSD层是电介质的，不连接到地。 当在电路元件上发生瞬态电事件时，VSD层立即切换到导通状态，使得第一电极连接到地。

    FORMULATIONS FOR VOLTAGE SWITCHABLE DIELECTRIC MATERIAL HAVING A STEPPED VOLTAGE RESPONSE AND METHODS FOR MAKING THE SAME
    5.
    发明申请
    FORMULATIONS FOR VOLTAGE SWITCHABLE DIELECTRIC MATERIAL HAVING A STEPPED VOLTAGE RESPONSE AND METHODS FOR MAKING THE SAME 审中-公开
    具有步进电压响应的电压可切换介质材料的配方及其制造方法

    公开(公告)号：WO2008036423A2

    公开(公告)日：2008-03-27

    申请号：PCT/US2007020682

    申请日：2007-09-24

    申请人： SHOCKING TECHNOLOGIES INC ,  KOSOWSKY LEX ,  FLEMING ROBERT

    发明人： KOSOWSKY LEX ,  FLEMING ROBERT

    IPC分类号： H01L27/082

    CPC分类号： H01L21/312 ,  B82Y30/00 ,  H01C7/12 ,  H01L21/3148 ,  H01L21/318 ,  Y10S438/90

    摘要： Formulations for voltage switchable dielectric materials include two or more different types of semiconductive materials uniformly dispersed within a dielectric matrix material. The semiconductive materials are selected to have different bandgap energies in order to provide the voltage switchable dielectric material with a stepped voltage response. The semiconductive materials can comprise inorganic particles, organic particles, or an organic material that is soluble in, or miscible with, the dielectric matrix material. Formulations optionally can also include electrically conductive materials. At least one of the conductive or semiconductive materials in a formulation can comprise particles characterized by an aspect ratio of at least 3 or greater.

    摘要翻译： 可变压电介质材料的配方包括均匀分散在电介质基质材料中的两种或多种不同类型的半导体材料。 选择半导体材料具有不同的带隙能量，以便提供具有阶梯式电压响应的电压可切换介电材料。 半导体材料可以包括无机颗粒，有机颗粒或可溶于介质基质材料或与之混溶的有机材料。 制剂任选地还可以包括导电材料。 制剂中的导电或半导体材料中的至少一种可以包含由纵横比至少为3或更大的特征的颗粒。

    WIRELESS COMMUNICATION DEVICE USING VOLTAGE SWITCHABLE DIELECTRIC MATERIAL
    6.
    发明申请
    WIRELESS COMMUNICATION DEVICE USING VOLTAGE SWITCHABLE DIELECTRIC MATERIAL 审中-公开
    使用电压可切换介质材料的无线通信设备

    公开(公告)号：WO2007062170A2

    公开(公告)日：2007-05-31

    申请号：PCT/US2006/045291

    申请日：2006-11-22

    申请人： SCHOCKING TECHNOLOGIES, INC. ,  KOSOWSKY, Lex

    发明人： KOSOWSKY, Lex

    IPC分类号： H01L33/00

    CPC分类号： G06K19/07345 ,  G06K19/07318 ,  G06K19/07735 ,  H05K1/0254 ,  H05K1/0373 ,  H05K2201/0738

    摘要： A wireless communication device, such as an RFID tag, is provided material that is dielectric, unless a voltage is applied that exceeds the materials characteristic voltage level. In the presence of such voltage, the material becomes conductive. The integration of such material into the device may be mechanical and/or electrical.

    摘要翻译： 提供诸如RFID标签之类的无线通信装置，除了施加超过材料特性电压电平的电压之外，还提供介电材料。 在存在这种电压的情况下，材料变得导电。 将这种材料整合到装置中可以是机械的和/或电的。

    COMPONENTS HAVING VOLTAGE SWITCHABLE DIELECTRIC MATERIALS
    9.
    发明申请
    COMPONENTS HAVING VOLTAGE SWITCHABLE DIELECTRIC MATERIALS 审中-公开
    具有电压可切换介质材料的组件

    公开(公告)号：WO2010110909A1

    公开(公告)日：2010-09-30

    申请号：PCT/US2010/000906

    申请日：2010-03-25

    申请人： SHOCKING TECHNOLOGIES, INC. ,  KOSOWSKY, Lex ,  FLEMING, Robert ,  GRAYDON, Bhret

    发明人： KOSOWSKY, Lex ,  FLEMING, Robert ,  GRAYDON, Bhret

    IPC分类号： H05K1/02 ,  H01C7/12 ,  H05K1/16

    CPC分类号： H05K1/0257 ,  H01C1/142 ,  H01C1/148 ,  H01C7/1006 ,  H05K1/0259 ,  H05K1/0373 ,  H05K1/167 ,  H05K2201/0738

    摘要： Various aspects provide for structures and devices to protect against spurious electrical events (e.g., electrostatic discharge). Some embodiments incorporate a voltage switchable dielectric material (VSDM) bridging a gap between two conductive pads. Normally insulating, the VSDM may conduct current from one pad to the other during a spurious electrical event (e.g,. shunting current to ground). Some aspects include gaps having a gap width that is greater than 50% of a spacing between electrical leads connected to the pads. Some devices include single layers of VSDM. Some devices include multiple layers of VSDM. Various devices may be designed to increase a ratio of active volume (of VSDM) to inactive volume.

    摘要翻译： 各种方面提供了用于防止假电气事件（例如静电放电）的结构和装置。 一些实施例包括桥接两个导电焊盘之间的间隙的可开关电介质材料（VSDM）。 通常绝缘，在寄生电气事件（例如，将电流分流到地）期间，VSDM可以将电流从一个焊盘传导到另一个焊盘。 一些方面包括间隙宽度大于连接到焊盘的电引线间距的50％的间隙。 一些设备包括VSDM的单层。 一些设备包括多层VSDM。 可以设计各种设备以增加活动体积（VSDM）与非活动体积的比率。

    VOLTAGE SWITCHABLE DIELECTRIC MATERIAL CONTAINING CONDUCTIVE CORE SHELLED PARTICLES
    10.
    发明申请
    VOLTAGE SWITCHABLE DIELECTRIC MATERIAL CONTAINING CONDUCTIVE CORE SHELLED PARTICLES 审中-公开

    公开(公告)号：WO2010039902A3

    公开(公告)日：2010-04-08

    申请号：PCT/US2009/059134

    申请日：2009-09-30

    申请人： SHOCKING TECHNOLOGIES, INC. ,  KOSOWSKY, Lex ,  FLEMING, Robert ,  WU, Junjun ,  SARAF, Pragnya ,  RANGANATHAN, Thangamani

    发明人： KOSOWSKY, Lex ,  FLEMING, Robert ,  WU, Junjun ,  SARAF, Pragnya ,  RANGANATHAN, Thangamani

    IPC分类号： H01C7/10

    摘要： A composition of voltage switchable dielectric (VSD) material that comprises a concentration of core shelled particles that individually comprise a conductor core and a shell, the shell of each core shelled particle being (i) multilayered, and/or (ii) heterogeneous. As depicted, VSD material 100 includes matrix binder 105 and various types of particle constituents, dispersed in the binder in various concentrations. The particle constituents of the VSD material may include a combination of conductive particles 110, semiconductor particles 120, nano-dimensioned particles 130 and/or core shelled particles 140. In some implementations, the core shelled particles may substitute for some or all of the conductive particles. As an alternative or variation, the VSD composition may omit the use of conductive particles, semiconductive particles, or nano-dimensioned particles, particularly with the presence of a concentration of core shelled particles. Thus, the type of particle constituent that are included in the VSD composition may vary, depending on the desired electrical and physical characteristics of the VSD material. For example, some VSD compositions may include conductive particles, but not semiconductive particles and/or nano-dimensioned particles (like carbon nanotube). Still further, other embodiments may omit use of conductive particles.