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    VOLTAGE SWITCHABLE DIELECTRIC MATERIAL FORMATIONS AND SUPPORTING IMPEDANCE ELEMENTS FOR ESD PROTECTION
    2.
    发明申请
    VOLTAGE SWITCHABLE DIELECTRIC MATERIAL FORMATIONS AND SUPPORTING IMPEDANCE ELEMENTS FOR ESD PROTECTION 审中-公开
    电压可切换电介质材料和支持的ESD保护元件

    公开(公告)号：WO2013070806A1

    公开(公告)日：2013-05-16

    申请号：PCT/US2012/063999

    申请日：2012-11-07

    Applicant: SHOCKING TECHNOLOGIES, INC.

    Inventor： VRTIS, Joan ,  VASQUEZ, Daniel ,  FLEMING, Robert ,  KOSOWSKY, Lex

    IPC: H01L27/04 ,  H01L23/60

    CPC classification number: H01L23/60 ,  H01L27/0288 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Embodiments disclosed herein generally relate to voltage switchable dielectric (VSD) materials and supporting impedance elements, and to structures, methods and devices employing voltage switchable dielectric materials and supporting impedance elements to achieve protection against ESD events, wherein the VSD materials and/or supporting impedance elements are incorporated in first level and/or second level packages, and wherein the first level package may be a die attached to a substrate and the second level package may be a circuit board to which the first level package is attached.

    Abstract translation: 本文公开的实施例通常涉及可变压电介质（VSD）材料和支撑阻抗元件，以及使用可切换电介质材料和支持阻抗元件以实现ESD事件保护的结构，方法和器件，其中VSD材料和/或支持阻抗 元件被并入第一级和/或第二级封装中，并且其中第一级封装可以是附接到衬底的管芯，并且第二级封装可以是与第一级封装件相连的电路板。

    METAL DEPOSITION
    4.
    发明申请
    METAL DEPOSITION 审中-公开
    金属沉积

    公开(公告)号：WO2011059769A1

    公开(公告)日：2011-05-19

    申请号：PCT/US2010/054563

    申请日：2010-10-28

    Applicant: SHOCKING TECHNOLOGIES, INC. ,  KOSOWSKY, Lex

    Inventor： KOSOWSKY, Lex

    IPC: C25D5/48

    CPC classification number: C25D5/022 ,  C25D5/54 ,  H05K1/0254 ,  H05K1/0373 ,  H05K1/167 ,  H05K3/107 ,  H05K3/188 ,  H05K3/388 ,  H05K3/423 ,  H05K3/426 ,  H05K2201/0215 ,  H05K2201/0738 ,  H05K2203/105

    Abstract: Systems and methods include depositing one or more materials on a voltage switchable dielectric material. In certain aspects, a voltage switchable dielectric material is disposed on a conductive backplane. In some embodiments, a voltage switchable dielectric material includes regions having different characteristic voltages associated with deposition thereon. Some embodiments include masking, and may include the use of a removable contact mask. Certain embodiments include electrografting. Some embodiments include an intermediate layer disposed between two layers.

    Abstract translation: 系统和方法包括在可开关电介质材料上沉积一种或多种材料。 在某些方面，电压可切换介电材料设置在导电背板上。 在一些实施例中，电压可切换介电材料包括具有与其上沉积相关联的不同特征电压的区域。 一些实施例包括掩蔽，并且可以包括使用可移除的接触掩模。 某些实施例包括电驱动。 一些实施例包括设置在两层之间的中间层。

    SUBSTRATE DEVICE OR PACKAGE USING EMBEDDED LAYER OF VOLTAGE SWITCHABLE DIELECTRIC MATERIAL IN A VERTICAL SWITCHING CONFIGURATION
    6.
    发明申请
    SUBSTRATE DEVICE OR PACKAGE USING EMBEDDED LAYER OF VOLTAGE SWITCHABLE DIELECTRIC MATERIAL IN A VERTICAL SWITCHING CONFIGURATION 审中-公开
    在垂直切换配置中使用电压可切换介质材料的嵌入层的衬底器件或封装

    公开(公告)号：WO2009129188A1

    公开(公告)日：2009-10-22

    申请号：PCT/US2009/040384

    申请日：2009-04-13

    Applicant: SHOCKING TECHNOLOGIES, INC. ,  KOSOWSKY, Lex ,  FLEMING, Robert ,  GRAYDON, Bhret

    Inventor： KOSOWSKY, Lex ,  FLEMING, Robert ,  GRAYDON, Bhret

    IPC: H05K1/02

    CPC classification number: H05K1/0257 ,  H05K1/0259 ,  H05K1/0373 ,  H05K2201/0738 ,  H05K2203/105

    Abstract: A substrate device includes an embedded layer of VSD material (230) that overlays a conductive element or layer (240) to provide a ground. An electrode (210), connected to circuit elements that are to be protected, extends into the thickness of the substrate to make contact with the VSD layer. When the circuit elements are operated under normal voltages, the VSD layer is dielectric and not connected to ground. When a transient electrical event occurs on the circuit elements, the VSD layer switches instantly to a conductive state, so that the first electrode is connected to ground.

    Abstract translation: 衬底器件包括覆盖导电元件或层（240）以提供接地的VSD材料（230）的嵌入层。 连接到要被保护的电路元件的电极（210）延伸到基板的厚度以与VSD层接触。 当电路元件在正常电压下工作时，VSD层是电介质的，不连接到地。 当在电路元件上发生瞬态电事件时，VSD层立即切换到导通状态，使得第一电极连接到地。

    FORMULATIONS FOR VOLTAGE SWITCHABLE DIELECTRIC MATERIAL HAVING A STEPPED VOLTAGE RESPONSE AND METHODS FOR MAKING THE SAME
    7.
    发明申请
    FORMULATIONS FOR VOLTAGE SWITCHABLE DIELECTRIC MATERIAL HAVING A STEPPED VOLTAGE RESPONSE AND METHODS FOR MAKING THE SAME 审中-公开
    具有步进电压响应的电压可切换介质材料的配方及其制造方法

    公开(公告)号：WO2008036423A2

    公开(公告)日：2008-03-27

    申请号：PCT/US2007020682

    申请日：2007-09-24

    Applicant: SHOCKING TECHNOLOGIES INC ,  KOSOWSKY LEX ,  FLEMING ROBERT

    Inventor： KOSOWSKY LEX ,  FLEMING ROBERT

    IPC: H01L27/082

    CPC classification number: H01L21/312 ,  B82Y30/00 ,  H01C7/12 ,  H01L21/3148 ,  H01L21/318 ,  Y10S438/90

    Abstract: Formulations for voltage switchable dielectric materials include two or more different types of semiconductive materials uniformly dispersed within a dielectric matrix material. The semiconductive materials are selected to have different bandgap energies in order to provide the voltage switchable dielectric material with a stepped voltage response. The semiconductive materials can comprise inorganic particles, organic particles, or an organic material that is soluble in, or miscible with, the dielectric matrix material. Formulations optionally can also include electrically conductive materials. At least one of the conductive or semiconductive materials in a formulation can comprise particles characterized by an aspect ratio of at least 3 or greater.

    Abstract translation: 可变压电介质材料的配方包括均匀分散在电介质基质材料中的两种或多种不同类型的半导体材料。 选择半导体材料具有不同的带隙能量，以便提供具有阶梯式电压响应的电压可切换介电材料。 半导体材料可以包括无机颗粒，有机颗粒或可溶于介质基质材料或与之混溶的有机材料。 制剂任选地还可以包括导电材料。 制剂中的导电或半导体材料中的至少一种可以包含由纵横比至少为3或更大的特征的颗粒。

    SUBSTRATES HAVING VOLTAGE SWITCHABLE DIELECTRIC MATERIALS
    8.
    发明申请
    SUBSTRATES HAVING VOLTAGE SWITCHABLE DIELECTRIC MATERIALS 审中-公开
    具有电压可切换介质材料的基板

    公开(公告)号：WO2012088360A1

    公开(公告)日：2012-06-28

    申请号：PCT/US2011/066673

    申请日：2011-12-21

    Applicant: SHOCKING TECHNOLOGIES, INC. ,  FLEMING, Robert ,  SHANG, Shurui

    Inventor： FLEMING, Robert ,  SHANG, Shurui

    IPC: H05K3/00 ,  G06F17/50

    CPC classification number: H05K1/0271 ,  H05K1/0259 ,  H05K1/036 ,  H05K1/0373 ,  H05K3/0005 ,  H05K2201/068 ,  H05K2201/0738 ,  H05K2201/09136 ,  Y10T29/49124

    Abstract: Various aspects provide for incorporating a VSDM into a substrate to create an ESD-protected substrate. In some cases, a VSDM is incorporated in a manner that results in the ESD-protected substrate meeting one or more specifications (e.g., thickness, planarity, and the like) for various subsequent processes or applications. Various aspects provide for designing a substrate (e.g., a PCB) incorporating a VSDM, and adjusting one or more aspects of the substrate to design a balanced, ESD-protected substrate. Certain embodiments include molding a substrate having a VSDM layer into a first shape.

    Abstract translation: 各种方面提供将VSDM结合到基底中以产生受ESD保护的基底。 在一些情况下，以导致ESD保护的衬底满足用于各种后续处理或应用的一个或多个规格（例如，厚度，平面度等）的方式结合VSDM。 各种方面提供了设计包含VSDM的衬底（例如，PCB），以及调整衬底的一个或多个方面以设计平衡的，受ESD保护的衬底。 某些实施方案包括将具有VSDM层的基底模制成第一形状。

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