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    SPIN-ORBIT LOGIC WITH CHARGE INTERCONNECTS AND MAGNETOELECTRIC NODES
    1.
    发明申请
    SPIN-ORBIT LOGIC WITH CHARGE INTERCONNECTS AND MAGNETOELECTRIC NODES 审中-公开
    具有电荷互连和磁电效应的旋转逻辑

    公开(公告)号：WO2016105436A1

    公开(公告)日：2016-06-30

    申请号：PCT/US2014/072447

    申请日：2014-12-26

    Applicant: INTEL CORPORATION ,  MANIPATRUNI, Sasikanth ,  NIKONOV, Dmitri E. ,  YOUNG, Ian A.

    Inventor： MANIPATRUNI, Sasikanth ,  NIKONOV, Dmitri E. ,  YOUNG, Ian A.

    IPC: H01L43/02

    CPC classification number: H01L27/22 ,  H01L27/228 ,  H01L43/08 ,  H03K19/173 ,  H03K19/18

    Abstract: An apparatus including a spin to charge conversion node; and a charge to spin conversion node, wherein an input to the spin to charge conversion node produces an output at the charge to spin conversion node. An apparatus including a magnet including an input node and output node, the input node including a capacitor operable to generate magnetic response in the magnet and the output node including at least one spin to charge conversion material. A method including injecting a spin current from a first magnet; converting the spin current into a charge current operable to produce a magnetoelectric interaction with a second magnet; and changing a direction of magnetization of the second magnet in response to the magnetoelectric interaction. A method including injecting a spin current from an input node of a magnet; and converting the spin current into a charge current at an output node of the magnet.

    Abstract translation: 一种包括旋转电荷转换节点的装置; 以及对自旋转换节点的电荷，其中到自旋电荷转换节点的输入在电荷到自旋转换节点处产生输出。 一种包括包括输入节点和输出节点的磁体的装置，所述输入节点包括可操作以在所述磁体中产生磁响应的电容器，所述输出节点包括至少一个自旋电荷转换材料。 一种包括从第一磁体注入自旋电流的方法; 将自旋电流转换成可操作以产生与第二磁体的磁电相互作用的充电电流; 以及响应于所述磁电相互作用而改变所述第二磁体的磁化方向。 一种包括从磁体的输入节点注入自旋电流的方法; 以及将所述自旋电流转换为所述磁体的输出节点处的充电电流。

    THREE-DIMENSIONAL MAGNETIC CIRCUITS INCLUDING MAGNETIC CONNECTORS
    4.
    发明申请
    THREE-DIMENSIONAL MAGNETIC CIRCUITS INCLUDING MAGNETIC CONNECTORS 审中-公开
    包括磁连接器在内的三维磁电路

    公开(公告)号：WO2012134570A1

    公开(公告)日：2012-10-04

    申请号：PCT/US2011/066791

    申请日：2011-12-22

    Applicant: INTEL CORPORATION ,  NIKONOV, Dmitri E. ,  YOUNG, Ian A.

    Inventor： NIKONOV, Dmitri E. ,  YOUNG, Ian A.

    IPC: H01L27/115 ,  H01L21/8247

    CPC classification number: H01L27/22 ,  H01L43/08

    Abstract: A device including at least two spintronic devices and a method of making the same. A magnetic connector extends between the two spintronic devices to conduct a magnetization between the two. The magnetic connector may further be disposed to conduct current to switch a magnetization of one of the two spintronic devices.

    Abstract translation: 包括至少两个自旋电子装置的装置及其制造方法。 磁性连接器在两个自旋电子器件之间延伸以在两者之间进行磁化。 磁连接器可进一步设置成传导电流以切换两个自旋电子器件之一的磁化。

    WRITE CURRENT REDUCTION IN SPIN TRANSFER TORQUE MEMORY DEVICES
    5.
    发明申请
    WRITE CURRENT REDUCTION IN SPIN TRANSFER TORQUE MEMORY DEVICES 审中-公开
    在自旋转移转矩记忆装置中的写入电流减小

    公开(公告)号：WO2012082403A3

    公开(公告)日：2012-08-16

    申请号：PCT/US2011063072

    申请日：2011-12-02

    Applicant: INTEL CORP ,  DOYLE BRIAN S ,  KENCKE DAVID L ,  KUO CHARLES C ,  NIKONOV DMITRI E ,  CHAU ROBERT S

    Inventor： DOYLE BRIAN S ,  KENCKE DAVID L ,  KUO CHARLES C ,  NIKONOV DMITRI E ,  CHAU ROBERT S

    IPC: H01L27/115 ,  H01L21/8247

    CPC classification number: H01L27/228 ,  G11C11/161 ,  G11C11/1659 ,  H01L43/02 ,  H01L43/08

    Abstract: The present disclosure relates to the fabrication of spin transfer torque memory elements for non-volatile microelectronic memory devices. The spin transfer torque memory element may include a magnetic tunneling junction connected with specifically sized and/or shaped fixed magnetic layer that can be positioned in a specific location adjacent a free magnetic layer. The shaped fixed magnetic layer may concentrate current in the free magnetic layer, which may result in a reduction in the critical current needed to switch a bit cell in the spin transfer torque memory element.

    Abstract translation: 本公开涉及用于非易失性微电子存储器件的自旋转移力矩存储器元件的制造。 自旋转移扭矩存储元件可以包括与特定尺寸和/或形状的固定磁性层连接的磁性隧道结，其可以定位在与自由磁性层相邻的特定位置。 成形的固定磁性层可将电流集中在自由磁性层中，这可导致切换自旋转移转矩存储器元件中的位单元所需的临界电流的减小。

    TUNNELING FIELD EFFECT TRANSISTORS WITH A VARIABLE BANDGAP CHANNEL
    6.
    发明申请
    TUNNELING FIELD EFFECT TRANSISTORS WITH A VARIABLE BANDGAP CHANNEL 审中-公开
    具有可变带宽通道的隧道场效应晶体管

    公开(公告)号：WO2015147849A1

    公开(公告)日：2015-10-01

    申请号：PCT/US2014/032117

    申请日：2014-03-28

    Applicant: INTEL CORPORATION ,  AVCI, Uygar E. ,  NIKONOV, Dmitri E. ,  YOUNG, Ian A.

    Inventor： AVCI, Uygar E. ,  NIKONOV, Dmitri E. ,  YOUNG, Ian A.

    IPC: H01L29/78 ,  H01L21/336

    CPC classification number: H01L29/66977 ,  H01L25/16 ,  H01L29/0847 ,  H01L29/1025 ,  H01L29/1054 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/42392 ,  H01L29/66356 ,  H01L29/66969 ,  H01L29/7391 ,  H01L29/78648 ,  H01L49/003

    Abstract: Tunneling field effect transistors (TFETs) including a variable bandgap channel are described. In some embodiments, one or more bandgap characteristics of the variable bandgap channel may be dynamically altered by at least one of the application or withdrawal of a force, such as a voltage or electric field. In some embodiments the variable bandgap channel may be configured to modulate from an ON to an OFF state and vice versa in response to the application and/or withdrawal of a force. The variable bandgap channel may exhibit a bandgap that is smaller in the ON state than in the OFF state. As a result, the TFETs may exhibit one or more of relatively high on current, relatively low off current, and sub-threshold swing below 60 mV/decade.

    Abstract translation: 描述包括可变带隙通道的隧穿场效应晶体管（TFET）。 在一些实施例中，可变带隙通道的一个或多个带隙特性可以通过施加或取出诸如电压或电场的力中的至少一个来动态改变。 在一些实施例中，可变带隙通道可以被配置成响应于施加和/或撤回力而从接通到关闭状态和反之亦然。 可变带隙通道可以表现出在ON状态下比在OFF状态下更小的带隙。 结果，TFET可以呈现出一个或多个相对较高的导通电流，相对低的截止电流以及低于60mV /十倍的次阈值摆幅。

    MAGNETIC STATE ELEMENT AND CIRCUITS
    10.
    发明申请
    MAGNETIC STATE ELEMENT AND CIRCUITS 审中-公开
    磁性元件和电路

    公开(公告)号：WO2013147781A1

    公开(公告)日：2013-10-03

    申请号：PCT/US2012/031072

    申请日：2012-03-29

    Applicant: MANIPATRUNI, Sasikanth ,  NIKONOV, Dmitri E. ,  YOUNG, Ian A.

    Inventor： MANIPATRUNI, Sasikanth ,  NIKONOV, Dmitri E. ,  YOUNG, Ian A.

    IPC: G11C11/15 ,  G11C5/14 ,  G06F1/00

    CPC classification number: H01L29/66984 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1653 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1697 ,  H01L27/226 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H03K19/16

    Abstract: Described is an apparatus, for spin state element device, which comprises: a variable resistive magnetic (VRM) device to receive a magnetic control signal to adjust resistance of the VRM device; and a magnetic logic gating (MLG) device, coupled to the VRM device, to receive a magnetic logic input and perform logic operation on the magnetic logic input and to drive an output magnetic signal based on the resistance of the VRM device. Described is a magnetic demultiplexer which comprises: a first VRM device to receive a magnetic control signal to adjust resistance of the first VRM; a second VRM device to receive the magnetic control signal to adjust resistance of the second VRM device; and an MLG device, coupled to the first and second VRM devices, the MLG device having at least two output magnets to output magnetic signals based on the resistances of the first and second VRM devices.

    Abstract translation: 描述了一种用于自旋状态元件器件的装置，其包括：可变电阻磁极（VRM）器件，用于接收磁控制信号以调节VRM器件的电阻; 以及耦合到VRM装置的磁逻辑门控（MLG）装置，以接收磁逻辑输入并对磁逻辑输入执行逻辑运算，并且基于VRM装置的电阻来驱动输出磁信号。 描述了一种磁解多路复用器，其包括：第一VRM装置，用于接收磁控制信号以调整第一VRM的电阻; 第二VRM装置，用于接收所述磁控信号以调整所述第二VRM装置的电阻; 以及耦合到第一和第二VRM装置的MLG装置，MLG装置具有至少两个输出磁体，以基于第一和第二VRM装置的电阻输出磁信号。

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