公开(公告)号：WO2012087613A3

公开(公告)日：2012-08-16

申请号：PCT/US2011064179

申请日：2011-12-09

Applicant: APPLIED MATERIALS INC ,  RAJAGOPALAN NAGARAJAN ,  PARK JI AE ,  YAMASE RYAN ,  PATEL SHAMIK ,  NOWAK THOMAS ,  XIA LI-QUN ,  KIM BOK HOEN ,  DING RAN ,  BALDINO JIM ,  NAIK MEHUL ,  RAMASWAMI SESH

Inventor： RAJAGOPALAN NAGARAJAN ,  PARK JI AE ,  YAMASE RYAN ,  PATEL SHAMIK ,  NOWAK THOMAS ,  XIA LI-QUN ,  KIM BOK HOEN ,  DING RAN ,  BALDINO JIM ,  NAIK MEHUL ,  RAMASWAMI SESH

IPC: H01L21/60 ,  H01L23/045 ,  H01L23/055 ,  H01L23/48

CPC classification number: H01L24/13 ,  H01L21/02074 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/6835 ,  H01L21/68792 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76898 ,  H01L24/11 ,  H01L24/742 ,  H01L2221/68372 ,  H01L2221/68381 ,  H01L2224/11002 ,  H01L2224/11452 ,  H01L2224/1182 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/13687 ,  H01L2224/742 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/351 ,  H01L2924/05042 ,  H01L2924/00

Abstract: A through-silicon via fabrication method includes etching a plurality of through holes in a silicon plate. An oxide liner is deposited on the surface of the silicon plate and on the sidewalls and bottom wall of the through holes. A metallic conductor is then deposited in the through holes. In another version, which may be used concurrently with the oxide liner, a silicon nitride passivation layer is deposited on the exposed back surface of the silicon plate of the substrate.

Abstract translation: 硅通孔制造方法包括蚀刻硅板中的多个通孔。 氧化物衬垫沉积在硅板的表面上以及通孔的侧壁和底壁上。 然后将金属导体沉积在通孔中。 在可以与氧化物衬垫同时使用的另一种形式中，氮化硅钝化层被沉积在衬底的硅板的暴露的背表面上。

公开(公告)号：WO2012087613A2

公开(公告)日：2012-06-28

申请号：PCT/US2011/064179

申请日：2011-12-09

Applicant: APPLIED MATERIALS, INC. ,  RAJAGOPALAN, Nagarajan ,  PARK, Ji Ae ,  YAMASE, Ryan ,  PATEL, Shamik ,  NOWAK, Thomas ,  XIA, Li-Qun ,  KIM, Bok Hoen ,  DING, Ran ,  BALDINO, Jim ,  NAIK, Mehul ,  RAMASWAMI, Sesh

Inventor： RAJAGOPALAN, Nagarajan ,  PARK, Ji Ae ,  YAMASE, Ryan ,  PATEL, Shamik ,  NOWAK, Thomas ,  XIA, Li-Qun ,  KIM, Bok Hoen ,  DING, Ran ,  BALDINO, Jim ,  NAIK, Mehul ,  RAMASWAMI, Sesh

IPC: H01L21/60 ,  H01L23/48 ,  H01L23/045 ,  H01L23/055

CPC classification number: H01L24/13 ,  H01L21/02074 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/6835 ,  H01L21/68792 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76898 ,  H01L24/11 ,  H01L24/742 ,  H01L2221/68372 ,  H01L2221/68381 ,  H01L2224/11002 ,  H01L2224/11452 ,  H01L2224/1182 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/13687 ,  H01L2224/742 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/351 ,  H01L2924/05042 ,  H01L2924/00

Abstract: A through-silicon via fabrication method includes etching a plurality of through holes in a silicon plate. An oxide liner is deposited on the surface of the silicon plate and on the sidewalls and bottom wall of the through holes. A metallic conductor is then deposited in the through holes. In another version, which may be used concurrently with the oxide liner, a silicon nitride passivation layer is deposited on the exposed back surface of the silicon plate of the substrate.

Abstract translation: 一种硅通孔制造方法包括蚀刻硅板中的多个通孔。 在硅板的表面和通孔的侧壁和底壁上沉积氧化物衬垫。 然后将金属导体沉积在通孔中。 在可与氧化物衬垫同时使用的另一种方案中，氮化硅钝化层沉积在衬底的硅板的暴露后表面上。