Abstract:
Disclosed herein are systems and methods for extending one or both of the discharge electrodes in a transverse discharge gas laser chamber in which one or both the electrodes are subject to a dimensional change due to erosion. Electrode extension can be performed to increase the chamber life, increase laser performance over the life of the chamber, or both. Operationally, the inter-electrode spacing may be adjusted to maintain a specific target gap distance between the electrodes or to optimize a specific parameter of the laser output beam such as bandwidth, pulse-to-pulse energy stability, beam size, etc.
Abstract:
A line narrowed gas discharge laser system and method of operating same is disclosed which may comprise a dispersive center wavelength selective element; a beam expander comprising a plurality of refractive elements; a refractive element positioning mechanism positioning at least one of the refractive elements to modify an angle of incidence of a laser light beam on the dispersive center wavelength selection element; each of the dispersive center wavelength selection element and the beam expander being aligned with each other and with a housing containing at least the dispersive center wavelength selection element; a housing positioning mechanism positioning the housing with respect to an optical axis of the gas discharge laser system. The dispersive element may comprise a grating and the beam expander may comprise a plurality of prisms. The housing may contain the dispersive center wavelength selective element and the beam expander. The housing positioning element may comprise a position locking mechanism.
Abstract:
A line narrowed gas discharge laser system and method of operating same is disclosed which may comprise a dispersive center wavelength selective element; a beam expander comprising a plurality of refractive elements; a refractive element positioning mechanism positioning at least one of the refractive elements to modify an angle of incidence of a laser light beam on the dispersive center wavelength selection element; each of the dispersive center wavelength selection element and the beam expander being aligned with each other and with a housing containing at least the dispersive center wavelength selection element; a housing positioning mechanism positioning the housing with respect to an optical axis of the gas discharge laser system. The dispersive element may comprise a grating and the beam expander may comprise a plurality of prisms. The housing may contain the dispersive center wavelength selective element and the beam expander. The housing positioning element may comprise a position locking mechanism.
Abstract:
Systems and methods are disclosed for focusing a beam for an interaction with a film deposited on a substrate wherein the focused beam defines a short axis and a long axis. In one aspect, the system may include a detecting system to analyze light reflected from the film on an image plane to determine whether the beam is focused in the short axis at the film. In still another aspect, a system may be provided for positioning a film (having an imperfect, non-planar surface) for interaction with a shaped line beam.
Abstract:
A line narrowing method and module for a narrow band DUV high power high repetition rate gas discharge laser producing output laser light pulse beam pulses in bursts of pulses, the module having a nominal optical path are disclosed which may comprise: a dispersive center wavelength selection optic moveably mounted within an optical path of the line narrowing module, selecting at least one center wavelength for each pulse determined at least in part by the angle of incidence of the laser light pulse beam containing the respective pulse on the dispersive wavelength selection optic; a first tuning mechanism operative in part to select the angle of incidence of the laser light pulse beam containing the respective pulse upon the dispersive center wavelength selection optic, by selecting an angle of transmission of the laser light pulse beam containing the pulse toward the dispersive center wavelength selection optic; a second tuning mechanism operative in part to select the angle of incidence of the laser light pulse beam containing the respective pulse by changing the position of the dispersive center wavelength selection optic relative to the nominal optical path of the line narrowing module; wherein the second tuning mechanism coarsely selects a value for the center wavelength and the first tuning mechanism more finely selects the value for the center wavelength.
Abstract:
An EUV light source apparatus and method are disclosed, which may comprise a pulsed laser providing laser pulses at a selected pulse repetition rate focused at a desired target ignition site; a target formation system providing discrete targets at a selected interval coordinated with the laser pulse repetition rate; a target steering system intermediate the target formation system and the desired target ignition site; and a target tracking system providing information about the movement of target between the target formation system and the target steering system, enabling the target steering system to direct the target to the desired target ignition site. The target tracking system may provide information enabling the creation of a laser firing control signal, and may comprise a droplet detector comprising a collimated light source directed to intersect a point on a projected delivery path of the target, having a respective oppositely disposed light detector detecting the passage of the target through the respective point, or a detector comprising a linear array of a plurality of photo-sensitive elements aligned to a coordinate axis, the light from the light source intersecting a projected delivery path of the target, at least one of the which may comprise a plane-intercept detection device. The droplet detectors may comprise a plurality of droplet detectors each operating at a different light frequency, or a camera having a field of view and a two dimensional array of pixels imaging the field of view. The apparatus and method may comprise an electrostatic plasma containment apparatus providing an electric plasma confinement field at or near a target ignition site at the time of ignition, with the target tracking system providing a signal enabling control of the electrostatic plasma containment apparatus. The apparatus and method may comprise a vessel having and intermediate wall with a low pressure trap allowing passage of EUV light and maintaining a differential pressure across the low pressure trap. The apparatus and method may comprise a magnetic plasma confinement mechanism creating a magnetic field in the vicinity of the target ignition site to confine the plasma to the target ignition site, which may be pulsed and may be controlled using outputs from the target tracking system.
Abstract:
The present invention provides a control system for a modular high repetition rate two discharge chamber ultra violet gas discharge laser. In preferred embodiments, the laser is a production line machine with a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. Novel control features specially adapted for a two-chamber gas discharge laser system include: (1) pulse energy controls, with nanosecond timing precision (2) precision pulse to pulse wavelength controls with high speed and extreme speed wavelength tuning (3) fast response gas temperature control and (4) F 2 injection controls with novel learning algorithm.
Abstract:
An injection seeded modular gas discharge laser system (2) capable of producing high quality pulsed beams at pulse rates of about 4,000 Hz or greater and at pulse energies of about 5 mJ or greater. Two separate discharge chambers are provided, one of which is a part of a master oscillator (10) producing a very narrow band seed beam, which is amplified (12) in the second discharge chamber. The chambers can be controlled separately permitting separate optimization of wavelength parameters in the master oscillator and optimization of pulse energy parameters in the amplifying chamber. A preferred embodiment in the ArF excimer laser system configured as a MOPA and specifically designed for use as a light source for integrated circuit lithography. In the preferred MOPA embodiment, each chamber comprises a single tangential fan (10A) providing sufficient gas flow to permit operation at pulse rates of 4,000 Hz or greater by cleaning debris from the discharge region in less time that the approximately 0.25 milliseconds between pulses. The masters oscillation is equipped with a line narrowing package having a very fast tuning mirror capable of controlling centerline wavelength on a pulse-to-pulse basis at repetition rates of 4000 Hz or greater to a precision of less than 0.2 pm.
Abstract:
A high resolution etalon-grating spectrometer or monochromator. A preferred embodiment presents as extremely narrow slit function in the ultraviolet range and is very useful for measuring bandwidth of narrow band excimer lasers used for integrated circuit lithography. Light from the laser is focused into a diffuser (D) and the diffused light exiting the diffuser illuminates an etalon (ET). A portion of its light exiting the etalon is collected and directed into a slit positioned at a fringe pattern of the etalon. Light passing through the slit is collimated (L3) and the collimated light illuminates a grating (GR1) positioned in an approximately Littrow configuration which disperses the light according to wavelength. A portion of the dispersed light representing the wavelength corresponding to the selected etalon fringe is passed through a second slit (2) and monitored by a light detector (PMT). When the etalon and the grating are tuned to the same precise wavelength a slit function is defined which is extremely narrow as about 0.034pm "FWHM" and about 0.091pm "95 percent integral". The etalon and the grating are placed in a leak-tight containment (50) filled with a gas, such a nitrogen or helium.
Abstract:
Fast wavelenght correction equipment for an electric discharge laser includes at least one piezoelectic drive (80) and a fast wavelength measurement system and a fast feedback response time. In a preferred embodiment equipment is provided to control wavelength on a slow, intermediate amd fast time scales, which vary in range from several milliseconds to a few microseconds respectively. Techniques include a combination of a relatively slow stepper motor (82) and a very fast piezoelectric drive (80) for tuning the laser wavelength using a tuning mirror (14).