Abstract:
A double ITO structure, containing sequential layers of indium tin oxide (ITO), silicon dioxide (SiO2) (which may include a dopant material) and ITO, is selectively protected by a patterned photo-resist mask. The sequential layers are etched together in a single etching step using an etchant composition which is an acidic solution containing a transition metal chloride and hydrochloric acid (HCl). Thus, the double ITO structure is etched using a substantially fluoride-free etchant composition.
Abstract:
A flexible polymeric dielectric layer has first and second major surfaces. The first major surface has a conductive layer thereon. The dielectric layer has at least one via extending from the second major surface to the first major surface. The conductive layer includes electrically separated first and second portions configured to support and electrically connect a light emitting semiconductor device to the conductive layer.
Abstract:
Provided is a flexible light emitting semiconductor device, such as an LED device, that includes a flexible dielectric layer having first and second major surfaces and at least one via extending through the dielectric layer from the first to the second major surface, with a conductive layer on each of the first and second major surfaces and in the via. The conductive layer in the via supports a light emitting semiconductor device and is electrically isolated from the conductive layer on the first major surface of the dielectric layer.
Abstract:
An article includes a flexible polymeric dielectric layer having first and second major surfaces. The first major surface has a conductive layer thereon and at least one cavity therein. The at least one cavity contains a conductive material including electrically separated first and second portions supporting and electrically connecting a light emitting semiconductor device to the conductive layer on the first major surface.
Abstract:
Provided is a flexible light emitting semiconductor device, such as an LED device, that includes a flexible dielectric layer having first and second major surfaces with a conductive layer on the first major surface and at least one cavity in the first major surface with a conductive layer in the cavity that supports a light emitting semiconductor device. The conductive layer in the cavity is electrically isolated from the second major surface of the dielectric layer.
Abstract:
A double ITO structure, containing sequential layers of indium tin oxide (ITO), silicon dioxide (SiO 2 ) (which may include a dopant material) and ITO, is selectively protected by a patterned photo-resist mask. The sequential layers are etched together in a single etching step using an etchant composition which is an acidic solution containing a transition metal chloride and hydrochloric acid (HCl). Thus, the double ITO structure is etched using a substantially fluoride-free etchant composition.
Abstract:
A flexible polymeric dielectric layer has first and second major surfaces. The first major surface has a conductive layer thereon. The dielectric layer has at least one via extending from the second major surface to the first major surface. The conductive layer includes electrically separated first and second portions configured to support and electrically connect a light emitting semiconductor device to the conductive layer.
Abstract:
A structure comprising a flexible dielectric film supporting on at least one side a thermoplastic polyimide layer, and on it a conductive layer, is treated by an "semi- additive" process. The "semi-additive" process comprises forming a patterned photo¬ resist layer, filling gaps in the photo-resist layer with conductive material, removing the photo-resist and exposed portions of the laminated conductive layer, and covering the structure with a coverlay. The inventors have realized that the process of laminating the copper layer onto the thermoplastic polyimide layer roughens the surface of the thermoplastic polyimide layer, thus anchoring the copper layer to the polyimide, which means that when the conductive material is deposited into the gaps in the photo-resist, conductive bodies are formed which are strongly anchored to the thermoplastic polyimide layer, and which can be used as electrodes of a flexible circuit.
Abstract:
Provided is a flexible light emitting semiconductor device (26), such as an LED device, that includes a flexible dielectric layer (12) having first and second major surfaces and at least one via (10) extending through the dielectric layer from the first to the second major surface, with a conductive layer (19, 20, 18) on each of the first and second major surfaces and in the via. The conductive layer (18) in the via supports a light emitting semiconductor device (26) and is electrically isolated from the conductive layer (19) on the first major surface of the dielectric layer.