Abstract:
Structures and methods of forming fine die-to-die interconnect routing are described. In an embodiment, a package includes a package-level RDL than spans across a die set and includes a plurality of die-to-die interconnects connecting contact pads between each die. In an embodiment, the plurality of die-to-die interconnects is embedded within one or more photoimageable organic dielectric layers.
Abstract:
Electronic packages and modules are described. In an embodiment, a hybrid thermal interface material including materials with different thermal conductivities is used to attach a lid to a device. In an embodiment, a low temperature solder material is included as part of an adhesion layer for attachment with a stiffener structure.
Abstract:
Packages and 3D die stacking processes are described. In an embodiment, a package includes a second level die hybrid bonded to a first package level including a first level die encapsulated in an oxide layer, and a plurality of through oxide vias (TOVs) extending through the oxide layer. In an embodiment, the TOVs and the first level die have a height of about 20 microns or less.
Abstract:
Vertically stacked system in package structures are described. A package includes a first level (125) molding (122) and fan out structure (130), a third level (185) molding (182) and fan out structure (190) and a second level (155) molding (152) and fan out structure (160) between the first and third levels (125, 185). The first level (125) molding (122) and fan out structure (130) includes a first level die (110), the second level (155) molding (152) and fan out structure (160) includes back-to-back facing dies (142), with a front surface of each die (142) bonded to a redistribution layer (130, 160), and the third level (185) molding (182) includes a third level die (172). A plurality of first level molding dies (110) may be used. The first level die (110) may be a volatile memory die, the second level dies (142) may be non-volatile memory dies and the third level die (172) may be an active die. In a method of forming the vertical stack system in package, a carrier substrate may be used and later removed.
Abstract:
Package structure with folded die arrangements and methods of fabrication are described. In an embodiment, a package structure includes a first die and vertical interposer side-by-side. A second die is face down on an electrically connected with the vertical interposer, and a local interposer electrically connects the first die with the vertical interposer.
Abstract:
Multiple component package structures are described in which an interposer chiplet (110) is integrated to provide fine routing between components. In an embodiment, the interposer chiplet (110) and a plurality of conductive vias (142) are encapsulated in an encapsulation layer (140). A first plurality of terminals (135A) of the first (130) and second (132) components may be in electrical connection with the plurality of conductive pillars and a second plurality of terminals (135B) of first and second components may be in electrical connection with the interposer chiplet (110).
Abstract:
In some embodiments, a semiconductor device package on package assembly may include a first package, a second package, and a third package. The first package may include a first surface, a second surface, a first die, and a first set of electrical conductors. The first set of electrical conductors may be configured to electrically connect the package on package assembly. The second package may include a third surface and a fourth surface, and a local memory module. The third surface may be coupled to the second surface. The first package may be electrically coupled to the second package. The third package may include a fifth surface and a sixth surface, and a main memory module. The fifth surface may be coupled to the fourth surface. The third package may be electrically coupled to the first package and/or the second package.
Abstract:
Chip sealing structures and methods of manufacture are described. In an embodiment, a chip structure includes a main body area formed of a substrate, a back-end-of-the-line (BEOL) build-up structure spanning over the substrate, and chip edge sidewalls extending from a back surface of the substrate to a top surface of the BEOL build-up structure and laterally surrounding the substrate and the BEOL build-up structure. In accordance with embodiments, the chip structure may further include a conformal sealing layer covering at least a first chip edge sidewall of the chip edge sidewalls and a portion of the top surface of the BEOL build-up structure, and forming a lip around the top surface of the BEOL build-up structure.
Abstract:
Electronic package structures and systems are described in which a 3D interconnect structure is integrated into a package redistribution layer and/or chiplet for power and signal delivery to a die. Such structures may significantly improve input output (IO) density and routing quality for signals, while keeping power delivery feasible.
Abstract:
Double side mounted package structures and memory modules incorporating such double side mounted package structures are described in which memory packages are mounted on both sides of a module substrate. A routing substrate is mounted to a bottom side of the module substrate to provide general purpose in/out routing and power routing, while signal routing from the logic die to double side mounted memory packages is provided in the module routing. In an embodiment, module substrate is a coreless module substrate and may be thinner than the routing substrate.