Abstract:
Multichip packages or multichip modules may include stacked chips and through silicon/substrate vias (TSVs) formed using enclosure-first technology. Enclosure-first technology may include forming an isolation enclosure associated with a TSV early in the fabrication process, without actually forming the associated TSV. The TSV associated with the isolation enclosure is formed later in the fabrication process. The enclosure-first technology allows the isolation enclosures to be used as alignment marks for stacking additional chips. The stacked chips can be connected to each other or to an external circuit such that data input is provided through the bottom-most (or topmost) chip, data is output from the bottom-most (or topmost) chip. The multichip package may provide a serial data connection, and a parallel connection, to each of the stacked chips.
Abstract:
Laminated interposers and packages, with embedded trace interconnects are provided. An example process for making an interposer or package achieves vertical conductive vias in the package by depositing conductive traces on multiple wafers or panes, then laminating these substrates into a stack, thereby embedding the conductive traces. The laminated stack is sliced to dimensions of an interposer or electronic package. A side of the sliced stack is then used as the top of the interposer or package, rendering some of the horizontally laid traces into vertical conductive vias. The interposer or package can be finished or developed by adding redistribution layers on the top and bottom surfaces, and active and passive components. Electronic components can also be embedded in the laminated stack. Some of the stack layers can be active dies, such as memory controllers, memory storage arrays, and processors, to form a memory subsystem or self-contained computing device.
Abstract:
A structure including a first semiconductor chip 20 with front and rear surfaces 24, 26 and a cavity 36 in the rear surface. A second semiconductor chip 70 is mounted within the cavity. The first chip 20 may have vias 48 extending from the cavity to the front surface and via conductors 54 within these vias serving to connect the additional microelectronic element 70 to the active elements of the first chip 20. The structure may have a volume comparable to that of the first chip 20 alone and yet provide the functionality of a multi-chip assembly. A composite chip 720 incorporating a body 722 and a layer 702 of semiconductor material mounted on a front surface 724 of the body similarly may have a cavity 736 extending into the body from the rear surface 726 and may have an additional microelectronic element 770 mounted in such cavity 736.
Abstract:
A composite integrated circuit (IC, 100) combines a first IC die (chip, 102) having a first on-chip interconnect structure (1 14) and a second IC die (104) having a second on-chip interconnect structure (1 15) on a reconstructed wafer base (108). The second IC die is edge-bonded to the first IC die with oxide-to- oxide edge bonding (1 10). A chip-to-chip interconnect structure (1 18) electrically couples the first IC die and the second IC die. Methods of fabricating such a composite IC are also described.
Abstract:
Memory devices with controllers under stacks of memory packages and associated systems and methods are disclosed herein. In one embodiment, a memory device is configured to couple to a host and can include a substrate, a stack of memory packages, and a controller positioned between the stack and the substrate. The controller can manage data stored by the memory packages based on commands from the host.
Abstract:
Stacked semiconductor die assemblies with support members and associated systems and methods are disclosed herein. In one embodiment, a semiconductor die assembly can include a package substrate, a first semiconductor die attached to the package substrate, and a plurality of support members also attached to the package substrate. The plurality of support members can include a first support member and a second support member disposed at opposite sides of the first semiconductor die, and a second semiconductor die can be coupled to the support members such that at least a portion of the second semiconductor die is over the first semiconductor die.
Abstract:
Embodiments of the present disclosure provide a package on package arrangement comprising a first package (804,904) including a substrate layer (116) including a top side (117a), and a bottom side (117b) that is opposite to the top side, wherein the top side of the substrate layer defines a substantially flat surface (117a), and a first die (118) coupled to the bottom side of the substrate layer. The arrangement also comprises a second package (802,902) including a plurality of rows of solder balls (806,906) and at least one of one or both of an active component or a passive component (810,910,920). The second package is attached, via the plurality of rows of solder balls, to the substantially flat surface of the top side of the substrate layer of the first package. The active component and/or a passive component (810,910,920) is attached to the substantially flat surface of the top side of the substrate layer of the first package.
Abstract:
Embodiments of the present disclosure provide a package on package arrangement comprising a bottom package and a second package. The first package includes a substrate layer including (i) a top side and (ii) a bottom side that is opposite to the top side. Further, the top side defines a substantially flat surface. The first package also includes a die coupled to the bottom side of the substrate layer. The second package includes a plurality of rows of solder balls, and the second package is attached to the substantially flat surface of the substrate layer via the plurality of rows of solder balls.
Abstract:
An assembly 100 and method of making same are provided. The assembly 100 can include a first component 105 including a dielectric region 120 having an exposed surface 122, a conductive pad 134 at the surface 122 defined by a conductive element 132 having at least a portion extending in an oscillating or spiral path along the surface 122, and a an electrically conductive bonding material 140 joined to the conductive pad 134 and bridging an exposed portion 137 of the dielectric surface 122 between adjacent segments 136, 138. The conductive pad 134 can permit electrical interconnection of the first component 105 with a second component 107 having a terminal 108 joined to the pad 134 through the electrically conductive bonding material 140. The path of the conductive element 132 may or may not overlap or cross itself.
Abstract:
A component can include a generally planar element, a reinforcing dielectric layer overlying the generally planar element, an encapsulation overlying the reinforcing dielectric layer, and a plurality of wire bonds. Each wire bond can have a tip at a major surface of the encapsulation. The wire bonds can have first portions extending within the reinforcing dielectric layer. The first portions of at least some of the wire bonds can have bends that change an extension direction of the respective wire bond. The reinforcing dielectric layer can have protruding regions surrounding respective ones of the wire bonds, the protruding regions extending to greater peak heights from the first surface of the generally planar element than portions of the reinforcing dielectric layer between adjacent ones of the protruding regions. The peak heights of the protruding regions can coincide with points of contact between the reinforcing dielectric layer and individual wire bonds.