STRUCTURE AND METHOD FOR SEALING A SILICON IC

    公开(公告)号:WO2023019070A1

    公开(公告)日:2023-02-16

    申请号:PCT/US2022/074392

    申请日:2022-08-01

    申请人: APPLE INC.

    摘要: Chip sealing structures and methods of manufacture are described. In an embodiment, a chip structure includes a main body area formed of a substrate, a back-end-of-the-line (BEOL) build-up structure spanning over the substrate, and chip edge sidewalls extending from a back surface of the substrate to a top surface of the BEOL build-up structure and laterally surrounding the substrate and the BEOL build-up structure. In accordance with embodiments, the chip structure may further include a conformal sealing layer covering at least a first chip edge sidewall of the chip edge sidewalls and a portion of the top surface of the BEOL build-up structure, and forming a lip around the top surface of the BEOL build-up structure.

    HIGH DENSITY 3D INTERCONNECT CONFIGURATION
    7.
    发明申请

    公开(公告)号:WO2021158419A1

    公开(公告)日:2021-08-12

    申请号:PCT/US2021/015441

    申请日:2021-01-28

    申请人: APPLE INC.

    IPC分类号: H01L23/50 H01L23/538

    摘要: Electronic package structures and systems are described in which a 3D interconnect structure is integrated into a package redistribution layer and/or chiplet for power and signal delivery to a die. Such structures may significantly improve input output (IO) density and routing quality for signals, while keeping power delivery feasible.

    DOUBLE SIDE MOUNTED LARGE MCM PACKAGE WITH MEMORY CHANNEL LENGTH REDUCTION

    公开(公告)号:WO2020112504A1

    公开(公告)日:2020-06-04

    申请号:PCT/US2019/062701

    申请日:2019-11-21

    申请人: APPLE INC.

    摘要: Double side mounted package structures and memory modules incorporating such double side mounted package structures are described in which memory packages are mounted on both sides of a module substrate. A routing substrate is mounted to a bottom side of the module substrate to provide general purpose in/out routing and power routing, while signal routing from the logic die to double side mounted memory packages is provided in the module routing. In an embodiment, module substrate is a coreless module substrate and may be thinner than the routing substrate.

    MULTI-DIE FINE GRAIN INTEGRATED VOLTAGE REGULATION

    公开(公告)号:WO2015020836A3

    公开(公告)日:2015-02-12

    申请号:PCT/US2014/048603

    申请日:2014-07-29

    申请人: APPLE INC.

    摘要: A semiconductor device package is described that includes a power consuming device (such as an SOC device). The power consuming device (120) may include one or more current consuming elements. A passive device (100) may be coupled (110) to the power consuming device. The passive device may include a plurality of passive elements formed on a semiconductor substrate. The passive elements may be arranged in an array of structures (102) on the semiconductor substrate. The power consuming device and the passive device may be coupled using one or more terminals (110). The passive device and power consuming device coupling may be configured in such a way that the power consuming device determines functionally the way the passive device elements will be used.