Abstract:
A dual channel showerhead comprising a first plurality of channels formed in the back surface of the showerhead and extending from a first end to a second end, a second plurality of channels formed through the thickness of the showerhead and extending from a first end to a second end, a first end plenum in fluid connection with the second plurality of channels at the first end and a second end plenum in fluid connection with the second plurality of channels at the second end. Processing chambers including the dual channel showerhead and a blocker ring separating the edge ring from the pumping ring are also discussed.
Abstract:
Methods and apparatus for controlling film deposition using a linear plasma source are described herein. The apparatus include a showerhead having openings therein for flowing a gas therethrough, a conveyor to support one or more substrates thereon disposed adjacent to the showerhead, and a power source for ionizing the gas. The ionized gas can be a source gas used to deposit a material on the substrate. The deposition profile of the material on the substrate can be adjusted, for example, using a gas-shaping device included in the apparatus. Additionally or alternatively, the deposition profile may be adjusted by using an actuatable showerhead. The method includes exposing a substrate to an ionized gas to deposit a film on the substrate, wherein the ionized gas is influenced with a gas-shaping device to uniformly deposit the film on the substrate as the substrate is conveyed proximate to the showerhead.
Abstract:
Apparatus and methods of processing a substrate in a carousel processing chamber are described. A wafer pedestal has a support surface with a support shaft extending below the wafer pedestal. A roller pinion wheel is below the wafer support around the support shaft. The roller pinion wheel has a plurality of spokes in contact with the support shaft and a wheel with a plurality of roller pinions spaced around the outer periphery of the wheel. Processing chambers incorporating the wafer pedestal and processing methods using the wafer pedestal for in-situ rotation are also described
Abstract:
The present invention generally provides a high throughput substrate processing system that is used to form one or more regions of a solar cell device. In one configuration of a processing system, one or more solar cell passivating or dielectric layers are deposited and further processed within one or more processing chambers contained within the high throughput substrate processing system. The processing chambers may be, for example, plasma enhanced chemical vapor deposition (PECVD) chambers, low pressure chemical vapor deposition (LPCVD) chambers, atomic layer deposition (ALD) chambers, physical vapor deposition (PVD) or sputtering chambers, thermal processing chambers (e.g., RTA or RTO chambers), substrate reorientation chambers (e.g., flipping chambers) and/or other similar processing chambers.
Abstract:
Gas supply systems and methods are disclosed for solar cell production using multiple parallel reactors. A first gas supply control system has a gas panel having a plurality of gas outlet lines, supplying a first main supply line having a main line mass flow meter measuring the combined total gas mass flow rate in the first main supply line. First, second and third branch lines supplied by the first main supply line each branch line having mass flow controller and one or more control loops established between the mass flow meter and the branch line mass flow controllers. In addition, a second gas supply control system may be coupled to the first gas supply control system to avoid mixing certain gases before they enter the respective reactors to which they are supplied.
Abstract:
Susceptor assemblies comprising a susceptor with a top surface with a plurality of recesses and a bottom surface are described. A heater is positioned below the susceptor to heat the susceptor. A shield is positioned between the bottom surface of the susceptor and the heater. The shield increases deposition uniformity across the susceptor.
Abstract:
Susceptor assemblies comprising a susceptor with a support post are described. The susceptor has a body with a top surface and a bottom surface. The top surface has a plurality of recesses therein. The support post is connected to the bottom surface of the susceptor to rotate the susceptor assembly. The support post includes support post vacuum plenum in fluid communication with a susceptor vacuum plenum in the body of the susceptor. The support post also includes a purge gas line extending through the support post to a purge gas plenum in the body of the susceptor.
Abstract:
Embodiments described herein generally relate to a dynamic load lock chamber that is adapted to transfer one or more substrates from a first region that is at first pressure to a second region that is at a second pressure. More specifically, embodiments relate to apparatuses for restraining substrates on a transport belt. In certain embodiments, wafer retention apparatuses are disposed on a flexible transport belt to maintain a position of a substrate on the transport belt while the substrate is transferred through the dynamic load lock chamber.
Abstract:
Gas distribution assemblies and processing chambers using same are described. The gas distribution assemblies comprise a cooling plate with a quartz puck, a plurality of reactive gas sectors and a plurality of purge gas sectors suspended therefrom. The reactive gas sectors and purge gas sectors having a coaxial gas inlet with inner tubes and outer tubes, the inner tubes and outer tubes in fluid communication with different gas or vacuum ports in the front faces of the sectors. The sectors may be suspended from the cooling plate by a plurality of suspension rods comprising a metal rod body with an enlarged lower end positioned within a quartz frame with a silicon washer around the enlarged lower end.
Abstract:
Embodiments of the present invention relate to a plasma source that includes an electrode and a plurality of target pieces covering an outer side surface of the electrode. The target pieces are electrically coupled to the electrode by one or more springs or spring-like elements. Alternatively, the target pieces may be pushed against the outer surface of the electrode by clamps or brackets. Since the target pieces are not bonded to the electrode, replacing the target pieces becomes more convenient