公开(公告)号：WO2015105633A1

公开(公告)日：2015-07-16

申请号：PCT/US2014/070288

申请日：2014-12-15

Applicant: APPLIED MATERIALS, INC.

Inventor： MANNA, Pramit ,  THADANI, Kiran V. ,  MALLICK, Abhijit Basu

IPC: H01L21/205 ,  H01L21/02

CPC classification number: H01L21/02216 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/67115

Abstract: Embodiments of the invention generally relate to methods of curing a carbon/silicon-containing low k material. The methods generally include delivering a deposition precursor to the processing region, the deposition precursor comprising a carbon/silicon-containing precursor, forming a remote plasma in the presence of an oxygen containing precursor, delivering the activated oxygen containing precursor to the deposition precursor to deposit a carbon/silicon-containing low k material on the substrate and curing the carbon/silicon-containing low k material in the presence of a carbon oxide gas.

Abstract translation: 本发明的实施方案一般涉及固化含碳/含硅低k材料的方法。 所述方法通常包括将沉积前体输送到处理区域，沉积前体包括含碳/硅的前体，在含氧前体存在下形成远程等离子体，将活化的含氧前体输送到沉积前体以沉积 在基底上的含碳/硅的低k材料，并在碳氧化物气体存在下固化碳/含硅低k材料。

公开(公告)号：WO2016105881A1

公开(公告)日：2016-06-30

申请号：PCT/US2015/063189

申请日：2015-12-01

Applicant: APPLIED MATERIALS, INC.

Inventor： LIANG, Jingmei ,  THADANI, Kiran V. ,  KACHIAN, Jessica S. ,  RAJAGOPALAN, Nagarajan

IPC: H01L21/205

CPC classification number: B81B3/00 ,  C23C16/401 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/505 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02315

Abstract: A method of reducing line bending and surface roughness of a substrate with pillars includes forming a treated surface by treating a pillar-containing substrate with a radical. The radical may be silicon-based, nitrogen-based or oxygen-based. The method may include forming a dielectric film over the treated surface by reacting an organosilicon precursor and an oxygen precursor. The method may include curing the dielectric film at a temperature of about 150C or less. A method of reducing line bending and surface roughness of a substrate with pillars includes forming a dielectric film over a pillar-containing substrate by reacting an organosilicon precursor, an oxygen precursor, and a radical precursor. The method may include curing the dielectric film at a temperature of about 150C or less. The radical precursor may be selected from the group consisting of nitrogen-based radical precursor, oxygen-based radical precursor, and silicon-based radical precursor.

Abstract translation: 减少具有柱的基体的线弯曲和表面粗糙度的方法包括通过用基团处理含柱基底来形成处理表面。 该基团可以是硅基，氮基或氧基。 该方法可以包括通过使有机硅前体和氧前体反应而在处理过的表面上形成电介质膜。 该方法可以包括在约150℃或更低的温度下固化电介质膜。 减少具有柱的基板的线弯曲和表面粗糙度的方法包括通过使有机硅前体，氧前体和自由基前体反应形成在含柱底物上的电介质膜。 该方法可以包括在约150℃或更低的温度下固化电介质膜。 自由基前体可以选自氮基自由基前体，氧基自由基前体和硅基自由基前体。

公开(公告)号：WO2016053619A1

公开(公告)日：2016-04-07

申请号：PCT/US2015/050242

申请日：2015-09-15

Applicant: APPLIED MATERIALS, INC

Inventor： THADANI, Kiran V. ,  MALLICK, Adhijit Basu ,  KAMATH, Sanjay

IPC: H01L21/205 ,  H01L21/31

CPC classification number: H01L21/02126 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/76224 ,  H01L21/76837

Abstract: Methods are described for forming a flowable low-k dielectric film on a patterned substrate. The film may be a silicon-carbon-oxygen (Si-C-O) layer in which the silicon and carbon constituents come from a silicon and carbon containing precursor while the oxygen may come from an oxygen-containing precursor activated in a remote plasma region. Shortly after deposition, the silicon-carbon-oxygen layer is treated by exposure to a hydrogen-and-nitrogen-containing precursor such as ammonia prior to curing. The treatment may remove residual moisture from the silicon-carbon-oxygen layer and may make the lattice more resilient during curing and subsequent processing. The treatment may reduce shrinkage of the silicon-carbon-oxygen layer during subsequent processing.

Abstract translation: 描述了在图案化衬底上形成可流动的低k电介质膜的方法。 该膜可以是硅 - 碳 - 氧（Si-C-O）层，其中硅和碳成分来自含硅和碳的前体，而氧可以来自在远程等离子体区域中活化的含氧前体。 在沉积后不久，在固化之前通过暴露于含氢和氮的前体例如氨来处理硅 - 碳 - 氧层。 处理可以从硅 - 碳 - 氧层去除残留的水分，并且可以使晶格在固化和随后的加工过程中更有弹性。 该处理可以在随后的处理期间减少硅 - 碳 - 氧层的收缩。

公开(公告)号：WO2011139435A2

公开(公告)日：2011-11-10

申请号：PCT/US2011/030582

申请日：2011-03-30

Applicant: APPLIED MATERIALS, INC. ,  THADANI, Kiran V. ,  TANG, Jing ,  INGLE, Nitin ,  YANG, Dongqing

Inventor： THADANI, Kiran V. ,  TANG, Jing ,  INGLE, Nitin ,  YANG, Dongqing

IPC: H01L21/3065

CPC classification number: H01L21/31116 ,  H01J37/32357

Abstract: Methods of dry etching silicon-containing dielectric films are described. The methods include maintaining a relatively high temperature of the dielectric films while etching in order to achieve reduced solid residue on the etched surface. Partially or completely avoiding the accumulation of solid residue increases the etch rate.

Abstract translation: 描述了干法蚀刻含硅介电膜的方法。 这些方法包括在蚀刻时保持电介质膜的较高温度，以便在蚀刻表面上实现减少的固体残余物。 部分或完全避免固体残余物的积累增加了蚀刻速率。

公开(公告)号：WO2015116350A1

公开(公告)日：2015-08-06

申请号：PCT/US2015/010323

申请日：2015-01-06

Applicant: APPLIED MATERIALS, INC.

Inventor： MANNA, Pramit ,  THADANI, Kiran V. ,  MALLICK, Abhijit Basu

IPC: H01L21/20 ,  H01L21/02

CPC classification number: H01L21/02164 ,  C23C16/402 ,  C23C16/56 ,  H01J37/32449 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/68742 ,  H01L21/68792

Abstract: Implementations described herein generally relate to methods for dielectric gap-fill. In one implementation, a method of depositing a silicon oxide layer on a substrate is provided. The method comprises introducing a cyclic organic siloxane precursor and an aliphatic organic siloxane precursor into a deposition chamber, reacting the cyclic organic siloxane precursor and the aliphatic organic siloxane precursor with atomic oxygen to form the silicon oxide layer on a substrate positioned in the deposition chamber, wherein the substrate is maintained at a temperature between about 0 °C and about 200 °C as the silicon oxide layer is formed, wherein the silicon oxide layer is initially flowable following deposition, and wherein a ratio of a flow rate of the cyclic organic siloxane precursor to a flow rate of the aliphatic organic siloxane precursor is at least 2:1 and curing the deposited silicon oxide layer.

Abstract translation: 本文描述的实现方式通常涉及电介质间隙填充的方法。 在一个实施方案中，提供了在衬底上沉积氧化硅层的方法。 该方法包括将环状有机硅氧烷前体和脂族有机硅氧烷前体引入沉积室，使环状有机硅氧烷前体与脂族有机硅氧烷前体与原子氧反应，在位于沉积室中的基底上形成氧化硅层， 其中当形成氧化硅层时，所述衬底保持在约0℃至约200℃之间的温度，其中所述氧化硅层在沉积后最初可流动，并且其中所述环状有机硅氧烷的流速比 脂族有机硅氧烷前体的流速的前体至少为2:1，并固化沉积的氧化硅层。

公开(公告)号：WO2015073188A1

公开(公告)日：2015-05-21

申请号：PCT/US2014/062212

申请日：2014-10-24

Applicant: APPLIED MATERIALS, INC.

Inventor： THADANI, Kiran V. ,  MALLICK, Abhijit Basu ,  INGLE, Nitin

IPC: H01L21/306 ,  H01L21/31

CPC classification number: H01L21/02219 ,  C23C16/36 ,  C23C16/56 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/67742

Abstract: Embodiments of the invention generally relate to methods of forming an etch resistant silicon-carbon-nitrogen layer. The methods generally include activating a silicon-containing precursor and a nitrogen-containing precursor in the processing region of a processing chamber in the presence of a plasma and depositing a thin flowable silicon-carbon-nitrogen material on a substrate using the activated silicon-containing precursor and a nitrogen-containing precursor. The thin flowable silicon-carbon-nitrogen material is subsequently cured using one of a variety of curing techniques. A plurality of thin flowable silicon-carbon-nitrogen material layers are deposited sequentially to create the final layer.

Abstract translation: 本发明的实施方案一般涉及形成耐蚀刻硅 - 碳 - 氮层的方法。 所述方法通常包括在存在等离子体的情况下在处理室的处理区域中活化含硅前体和含氮前体，并使用活化的含硅物质在衬底上沉积薄的可流动的硅 - 碳 - 氮材料 前体和含氮前体。 随后使用各种固化技术之一固化薄的可流动的硅 - 碳 - 氮材料。 顺序沉积多个薄的可流动的硅 - 碳 - 氮材料层以产生最终层。

公开(公告)号：WO2014137609A1

公开(公告)日：2014-09-12

申请号：PCT/US2014/017350

申请日：2014-02-20

Applicant: APPLIED MATERIALS, INC.

Inventor： THADANI, Kiran V. ,  XU, Jingjing ,  MALLICK, Abhijit Basu ,  CRUZ, Joe Griffith ,  INGLE, Nitin K. ,  NARWANKAR, Pravin K.

IPC: H01L21/205

CPC classification number: H01L21/2015 ,  C23C16/045 ,  C23C16/26 ,  C23C16/30 ,  C23C16/56 ,  H01J37/32357 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/3105 ,  H01L21/764 ,  H01L21/7682 ,  H01L21/76837 ,  H01L2221/1047

Abstract: A method of forming and controlling air gaps between adjacent raised features on a substrate includes forming a silicon-containing film in a bottom region between the adjacent raised features using a flowable deposition process. The method also includes forming carbon-containing material on top of the silicon-containing film and forming a second film over the carbon-containing material using a flowable deposition process. The second film fills an upper region between the adjacent raised features. The method also includes curing the materials at an elevated temperature for a period of time to form the air gaps between the adjacent raised features. The thickness and number layers of films can be used to control the thickness, vertical position and number of air gaps.

Abstract translation: 在衬底上形成和控制相邻凸起特征之间的气隙的方法包括使用可流动的沉积工艺在相邻凸起特征之间的底部区域中形成含硅膜。 该方法还包括在含硅膜的顶部上形成含碳材料，并使用可流动的沉积工艺在含碳材料上形成第二膜。 第二膜填充相邻凸起特征之间的上部区域。 该方法还包括在升高的温度下固化材料一段时间以形成相邻凸起特征之间的气隙。 膜的厚度和数量层可用于控制厚度，垂直位置和气隙数量。

公开(公告)号：WO2014055378A1

公开(公告)日：2014-04-10

申请号：PCT/US2013/062506

申请日：2013-09-29

Applicant: APPLIED MATERIALS, INC.

Inventor： TANG, Sum-Yee Betty ,  SEAMONS, Martin ,  THADANI, Kiran V. ,  MALLICK, Abhijit

IPC: C23C16/44 ,  C23C16/50

CPC classification number: C09D5/006 ,  C23C16/30 ,  C23C16/452 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14685 ,  H01L31/02161 ,  H01L31/02325 ,  H01L31/105 ,  H01L31/18

Abstract: A method of depositing a low refractive index coating on a photo-active feature on a substrate comprises forming a substrate having one or more photo-active features thereon and placing the substrate in a process zone. A deposition gas is energized in a remote gas energizer, the deposition gas comprising a fluorocarbon gas and an additive gas. The remotely energized deposition gas is flowed into the process zone to deposit a low refractive index coating on the substrate.

Abstract translation: 在衬底上的光活性特征上沉积低折射率涂层的方法包括在其上形成具有一个或多个光活性特征的衬底并将衬底放置在工艺区中。 沉积气体在远程气体激发器中通电，沉积气体包括碳氟化合物气体和添加气体。 远程供电的沉积气体流入工艺区域以在衬底上沉积低折射率涂层。

公开(公告)号：WO2014042833A1

公开(公告)日：2014-03-20

申请号：PCT/US2013/055802

申请日：2013-08-20

Applicant: APPLIED MATERIALS, INC.

Inventor： CHATTERJEE, Amit ,  MALLICK, Abhijit Basu ,  INGLE, Nitin K. ,  UNDERWOOD, Brian ,  THADANI, Kiran V. ,  CHEN, Xiaolin ,  DUBE, Abhishek ,  LIANG, Jingmei

IPC: H01L21/205

CPC classification number: H01L21/02274 ,  C23C16/401 ,  C23C16/505 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02219

Abstract: A method of forming a dielectric layer is described. The method deposits a silicon- -containing film by chemical vapor deposition using a local plasma. The silicon-containing film is flowable during deposition at low substrate temperature. A silicon precursor (e.g. a silylamine, higher order silane or halogenated silane) is delivered to the substrate processing region and excited in a local plasma. A second plasma vapor or gas is combined with the silicon precursor in the substrate processing region and may include ammonia, nitrogen (N2), argon, hydrogen (H2) and/or oxygen (O2). The equipment configurations disclosed herein in combination with these vapor/gas combinations have been found to result in flowable deposition at substrate temperatures below or about 200C when a local plasma is excited using relatively low power.

Abstract translation: 描述形成电介质层的方法。 该方法通过使用局部等离子体的化学气相沉积沉积含硅膜。 含硅膜在低衬底温度下沉积时是可流动的。 将硅前体（例如甲硅烷基胺，高级硅烷或卤代硅烷）输送到衬底处理区域并在局部等离子体中激发。 第二等离子体蒸汽或气体与硅衬底加工区域中的硅前体结合，并且可以包括氨，氮（N 2），氩，氢（H 2）和/或氧（O 2）。 已经发现本文公开的与这些蒸汽/气体组合结合的设备结构导致当基板温度低于或约为200℃时，当使用相对低的功率激发局部等离子体时，可流动的沉积。