Abstract:
Die Erfindung betrifft ein Kontaktsystem. Das Kontaktsystem umfasst wenigstens ein insbesondere elektronisches Bauelement. Das Bauelement weist wenigstens einen elektrischen Anschluss auf. Das Kontaktsystem weist wenigstens eine elektrisch leitfähige Schicht auf. Der Anschluss des Bauelements und die elektrisch leitfähige Schicht sind mittels eines elektrisch leitfähigen Verbindungsmittels miteinander verbunden. Erfindungsgemäß ist das elektrisch leitfähige Verbindungsmittel mittels eines thermischen Spritzverfahrens erzeugt.
Abstract:
A method for manufacturing semiconductor package comprising: a first step of forming a solder mask formed with an opening on an insulation substrate; and a second step of firmly adhering a solder paste and a metal ball on the solder mask to mount chips thereon, such that a circuit density of a substrate can be greatly increased by directly printing a solder paste on a solder mask following formation of an opening of the solder mask on a trace and can be applied to a fine bump pitch of less than 100µm due to non-existence of bump bridges.
Abstract:
The invention is related to a method of fabricating an attachment bump of a component (11). In accordance with the invention, a flexible preform (13a) is fabricated, which is plated with materials (13b) appropriate for metallurgical bonding. The invention is also related to a method of attaching a component (11) to the surface of a circuit card (15) using bumps. In accordance with the invention, bumps are formed from preforms (13a) made from a flexible material, which preforms (13a) are metallized (13b) over their entire surface. The bump (13a, 13b) is attached to the attachment pads (12a, 16a) of the component (11) and the circuit card (15) by means of metallizations (12b, 13b, 16b) between the attachment pads and the bump. The bond is formed metallurgically by transfusion. The surface of the bonding side of the component (11) is coated with an insulating material (14) before the mentioned bonding elsewhere than at the attachment pads (12). The mentioned insulating material (14) is thermoplastic, thermoplastic resin or thermosetting plastic in the B state. To accomplish metallurgical bonding of the bonding material, bismuth (Bi) is used as part of the material.
Abstract:
An implantable medical device (IMD) is disclosed. The !MD includes a first substrate having a front side and a backside. A first via is formed in the front side, the via extending from a bottom point in the front side to a first height located at a surface of the front side. A first conductive pad is formed in the first via, the first conductive pad having an exposed top surface lower than first height. A second substrate is coupled to the first substrate, the second substrate having a second via formed in the front side, the via extending from a bottom point in the front side to a second height located at a surface of the front side. A second conductive pad is formed in the second via, the second conductive pad having an exposed top surface lower than second height. The coupled substrates are heated until a portion of one or both conductive pads refiow, dewet, agglomerate, and merge to form an interconnect, hermetic seal, or both depending on the requirements of the device.
Abstract:
A multiple wiring layer interconnection element (100) includes capacitors (110) or other electrical components embedded between a first exposed wiring layer (120) and a second exposed wiring layer (122) of the interconnection element (100). Internal wiring layers (124) and (126) are provided between exposed surfaces (112) of the respective capacitors (110), the internal wiring layers being electrically insulated from the capacitors (110) by dielectric layers (114) and (116), respectively. The internal wiring layers (124), (126) are isolated from each other by an internal dielectric layer (130). Conductive vias (132) provide conductive interconnection between the two internal wiring layers (124, 126). A method of fabricating a multiple wiring layer interconnection element is also provided.
Abstract:
A semiconductor device (1) comprising electrodes formed on a semiconductor chip (2) and bumps (3) which consist of a low melting point metal ball spherically formed and having a given size and which are adhesive bonded to the electrodes (5). The electrodes (5) are formed from an electrode material of Cu or a Cu alloy, Al or an Al alloy, or Au or a Au alloy. When the electrode material is composed of Al or an Al alloy, the electrodes contain, on the electrode material layer of Al or an Al alloy, at least one layer (6) composed of a metal or metal alloy (preferably a metal selected from Ti, W, Ni, Cr, Au, Pd, Cu, Pt, Ag, Sn or Pb, or an alloy of these metals) having a melting point higher than the electrode material. The low melting point metal balls (3) are adhesive bonded to the electrodes (5) preferably with a flux. The low melting point metal balls (3) adhesive bonded to the respective electrodes (3) may also be reflowed to form semispherical bumps (10) before use.
Abstract:
A semiconductor pellet having bump electrodes on external terminals. The bump electrode comprises a laminate structure of a Pb layer and a thinner Sn layer on the surface of the external terminal. In this way, the semiconductor pellet can be connected to the surface of a resin substrate having a low heat resistance through the bump electrode without using a low-melting preparatory solder. A semiconductor device with an increased number of pins can be realized by connecting the semiconductor pellet through the bump electrodes to a resin substrate having a low heat resistance. The yield of the semiconductor device can be improved by using the semiconductor pellet with the bump electrodes, together with a resin substrate having a low heat resistance.