公开(公告)号：WO2016073962A1

公开(公告)日：2016-05-12

申请号：PCT/US2015/059629

申请日：2015-11-06

Applicant: TEXAS INSTRUMENTS INCORPORATED ,  TEXAS INSTRUMENTS JAPAN LIMITED

Inventor： GUO, Honglin ,  TAYLOR, Tim, A. ,  WEST, Jeff, A. ,  JACKSON, Ricky, A. ,  WILLIAMS, Byron

IPC: H01L21/02 ,  H01L21/033 ,  H01L51/05 ,  H01L51/56

CPC classification number: H01L21/02118 ,  H01G4/14 ,  H01G4/18 ,  H01G4/224 ,  H01G4/236 ,  H01G4/33 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/0228 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/3192 ,  H01L23/564 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L28/40 ,  H01L51/00 ,  H01L2224/02166 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/04042 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/0558 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/03 ,  H01L2924/014 ,  H01L2224/45099

Abstract: In described examples, water molecule infiltration from water vapor in the ambient is effectively reduced by a moisture barrier (320) including a layer of aluminum oxide formed by an atomic layer deposition (ALD) process. A microelectronic device (300) includes a capacitor (306) with organic polymer material (314) in the capacitor dielectric (310) and a moisture barrier (320) with a layer of aluminum oxide formed by an ALD process.

Abstract translation: 在所述实施例中，通过包含由原子层沉积（ALD）工艺形成的氧化铝层的防潮层（320）有效地减少了水分子在环境中渗透的渗透。 微电子器件（300）包括在电容器电介质（310）中具有有机聚合物材料（314）的电容器（306）和具有由ALD工艺形成的氧化铝层的防潮层（320）。

公开(公告)号：WO2015184148A1

公开(公告)日：2015-12-03

申请号：PCT/US2015/032993

申请日：2015-05-28

Applicant: TEXAS INSTRUMENTS INCORPORATED ,  TEXAS INSTRUMENTS JAPAN LIMITED

Inventor： GUO, Honglin ,  WILLIAMS, Byron, Lovell

IPC: H01G2/08 ,  H01G4/258

CPC classification number: H01G2/08 ,  H01B3/306 ,  H01G4/018 ,  H01G4/18 ,  Y10T29/42

Abstract: In described examples, a heated capacitor (100) removes moisture from a moisture-sensitive insulating layer (114) of the heated capacitor (100) that lies between and touches a lower metal plate (112) and an upper metal plate (116) of the heated capacitor (100) with the heat that is generated by the resistance to a current that passes through or near the heated capacitor (100).

Abstract translation: 在上述实施例中，加热电容器（100）从加热的电容器（100）的湿敏绝缘层（114）中去除水分，该电容器位于并接触下金属板（112）和下金属板（112）的上金属板 所述加热电容器（100）具有由通过或接近加热的电容器（100）的电流的电阻产生的热量。

公开(公告)号：WO2020023743A1

公开(公告)日：2020-01-30

申请号：PCT/US2019/043432

申请日：2019-07-25

Applicant: TEXAS INSTRUMENTS INCORPORATED ,  TEXAS INSTRUMENTS JAPAN LIMITED

Inventor： HONG, Qi-Zhong ,  GUO, Honglin ,  TIMMER, Benjamin James ,  SHINN, Gregory Boyd

IPC: H01L21/70 ,  H01L49/02 ,  H01C7/00

Abstract: An integrated circuit (IC) (100) includes a substrate having a semiconductor surface layer (102) with functional circuitry for realizing at least one circuit function, with an inter level dielectric (ILD) layer (112) on a metal layer (118) that is above the semiconductor surface layer (102). A thin film resistor (TFR) including a TFR layer is on the ILD layer. At least one vertical metal wall (108) is on at least two sides of the TFR. The metal walls include at least 2 metal levels coupled by filled vias (126). The functional circuitry is outside the metal walls.

公开(公告)号：WO2007127779A3

公开(公告)日：2007-11-08

申请号：PCT/US2007/067382

申请日：2007-04-25

Applicant: TEXAS INSTRUMENTS INCORPORATED ,  GUO, Honglin ,  LI, Dongmei ,  GOODLIN, Brian ,  MCPHERSON, Joe

Inventor： GUO, Honglin ,  LI, Dongmei ,  GOODLIN, Brian ,  MCPHERSON, Joe

IPC: H01L29/00

Abstract: One aspect of the invention provides an integrated circuit(IC) [400b]. The IC comprises transistors [410b] and contact fuses [422b]. The contact fuses each comprise a conducting layer [424b], a frustum-shaped contact [426b] has a narrower end that contacts the conducting layer and a first metal layer [427b] that is located over the conducting layer. A wider end of the frustum- shaped contact contacts the first metal layer. The frustum-shaped contact has a ratio of an opening of the wider end to the narrower end that is at least about 1.2. The contact fuses each further include a heat sink [432b] that is located over and contacts the first metal layer.

公开(公告)号：WO2005072200A2

公开(公告)日：2005-08-11

申请号：PCT/US2005/001638

申请日：2005-01-18

Applicant: TEXAS INSTRUMENTS INCORPORATED ,  GUO, Honglin ,  MCPHERSON, Joe, W.

Inventor： GUO, Honglin ,  MCPHERSON, Joe, W.

IPC: H01L21/302 ,  H01L21/44 ,  H01L21/461 ,  H01L21/768

CPC classification number: H01L21/76877

Abstract: The present invention defines a system for impeding corrosive egress from a metallic trench structure (206) during the production of a semiconductor device segment (200). The system of the present invention provides a first non-metallic structure (212) and a second non-metallic structure (214). The metallic trench structure is interposed between the first and second non-metallic structures. The device segment is cleaned, after which an upper exposed surface (220) of the metallic structure is recessed (226) from an upper exposed surface (216) of the first or second non-metallic structure by a desired amount.

Abstract translation: 本发明限定了在制造半导体器件段（200）期间阻止来自金属沟槽结构（206）的腐蚀性出口的系统。 本发明的系统提供第一非金属结构（212）和第二非金属结构（214）。 金属沟槽结构介于第一和第二非金属结构之间。 清洁装置段，此后金属结构的上暴露表面（220）从第一或第二非金属结构的上暴露表面（216）凹入（226）所需的量。