SUBSTRATE COMPRISING IMPROVED VIA PAD PLACEMENT IN BUMP AREA
    1.
    发明申请
    SUBSTRATE COMPRISING IMPROVED VIA PAD PLACEMENT IN BUMP AREA 审中-公开
    通过在BUG区域中的垫片放置改进的基础

    公开(公告)号:WO2015095385A1

    公开(公告)日:2015-06-25

    申请号:PCT/US2014/070940

    申请日:2014-12-17

    Abstract: Some novel features pertain to an integrated device that includes a substrate, a first via, and a first bump pad. The first via traverses the substrate. The first via has a first via dimension. The first bump pad is on a surface of the substrate. The first bump pad is coupled to the first via. The first bump pad has a first pad dimension that is equal or less then the first via dimension. In some implementations, the integrated device includes a second via and a second bump pad. The second via traverses the substrate. The second via has a second via dimension. The second bump pad is on the surface of the substrate. The second bump pad is coupled to the second via. The second bump pad has a second pad dimension that is equal or less then the second via dimension.

    Abstract translation: 一些新颖的特征涉及包括基板,第一通孔和第一凸块垫的集成装置。 第一个通孔穿过基板。 第一个通孔具有第一通孔尺寸。 第一凸点焊盘位于基板的表面上。 第一碰撞焊盘耦合到第一通孔。 第一凸块焊盘具有等于或小于第一通孔尺寸的第一焊盘尺寸。 在一些实施方案中,集成器件包括第二通孔和第二凸点焊盘。 第二个通孔穿过基板。 第二通孔具有第二通孔尺寸。 第二凸点焊盘位于基板的表面上。 第二凸块焊盘耦合到第二通孔。 第二凸块焊盘具有等于或小于第二通孔尺寸的第二焊盘尺寸。

    PATTERN DECOMPOSITION LITHOGRAPHY TECHNIQUES
    2.
    发明申请
    PATTERN DECOMPOSITION LITHOGRAPHY TECHNIQUES 审中-公开
    图案分解光刻技术

    公开(公告)号:WO2013101108A1

    公开(公告)日:2013-07-04

    申请号:PCT/US2011/067930

    申请日:2011-12-29

    Abstract: Techniques are disclosed for realizing a two-dimensional target lithography feature/pattern by decomposing (splitting) it into multiple unidirectional target features that, when aggregated, substantially (e.g., fully) represent the original target feature without leaving an unrepresented remainder (e.g., a whole-number quantity of unidirectional target features). The unidirectional target features may be arbitrarily grouped such that, within a grouping, all unidirectional target features share a common target width value. Where multiple such groupings are provided, individual groupings may or may not have the same common target width value. In some cases, a series of reticles is provided, each reticle having a mask pattern correlating to a grouping of unidirectional target features. Exposure of a photoresist material via the aggregated series of reticles substantially (e.g., fully) produces the original target feature/pattern. The pattern decomposition techniques may be integrated into any number of patterning processes, such as litho-freeze-litho-etch and litho-etch-litho-etch patterning processes.

    Abstract translation: 公开了用于通过将其分解(分解)成多个单向目标特征来实现二维目标光刻特征/图案的技术,其在聚合时基本上(例如,完全)代表原始目标特征而不留下未表示的余数(例如, 全数量的单向目标特征)。 单向目标特征可以被任意分组,使得在分组内,所有单向目标特征共享共同的目标宽度值。 在提供多个这样的分组的情况下,个体分组可以具有或不具有相同的共同目标宽度值。 在一些情况下,提供一系列光罩,每个掩模版具有与单向目标特征的分组相关的掩模图案。 基本上(例如,完全)通过聚集的标线系列曝光光致抗蚀剂材料产生原始目标特征/图案。 图案分解技术可以集成到任何数量的图案化工艺中,例如光刻冷冻 - 光刻蚀刻和光蚀刻 - 光蚀刻图案化工艺。

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