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    Silicon nitride ceramic substrate, silicon nitride ceramic circuit board using the substrate, and method of manufacturing the same
    101.
    发明公开
    Silicon nitride ceramic substrate, silicon nitride ceramic circuit board using the substrate, and method of manufacturing the same 有权
    Keramiksubstrat aus Siliziumnitrid und das Substrat verwendende keramische Schaltkreisplatte

    公开(公告)号：EP1201623A2

    公开(公告)日：2002-05-02

    申请号：EP01125326.7

    申请日：2001-10-26

    申请人： Kabushiki Kaisha Toshiba

    发明人： Komatsu, Michyasu ,  Yamaguchi, Haruhiko ,  Naba, Takayuki ,  Yamaguchi, Hideki

    IPC分类号： C04B35/587 ,  H01L23/15 ,  H01L21/48

    CPC分类号： H01L23/15 ,  C04B35/584 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/3011 ,  H05K1/0306 ,  Y10T29/49158 ,  Y10T428/2949 ,  H01L2924/00

    摘要： The present invention provides a silicon nitride ceramic substrate composed of a silicon nitride sintered body in which maximum size of pore existing in grain boundary phase of the sintered body is 0.3µm or less, and having a thermal conductivity of 50W/mK or more and a three point bending strength of 500MPa or more, wherein a leak current is 1000nA or less when an alternative voltage of 1.5kV-100Hz is applied to a portion between front and back surfaces of the silicon nitride sintered body under conditions of a temperature of 25°C and a relative humidity of 70%. According to the above structure of the present invention, there can be provided a silicon nitride ceramic substrate capable of effectively suppressing a leak current generation when the above substrate is assembled into various power modules and circuit boards, and capable of greatly improving insulating property and operative reliability of power modules in which output power and capacity are greatly increased.

    摘要翻译： 本发明提供一种由氮化硅烧结体构成的氮化硅陶瓷衬底，其中存在于烧结体的晶界相的孔的最大尺寸为0.3μm以下，导热率为50W / mK以上， 三点弯曲强度为500MPa以上的情况下，在温度25℃的条件下，在氮化硅烧结体的正面和背面的部分施加1.5kV-100Hz的替代电压时，漏电流为1000nA以下 ℃，相对湿度70％。 根据本发明的上述结构，可以提供一种氮化硅陶瓷基板，其能够有效地抑制上述基板组装成各种功率模块和电路板时产生的漏电流，能够大大提高绝缘性能和操作性 输出功率和容量大大提高的电源模块的可靠性。

    GLASS CERAMICS COMPOSITION AND ELECTRONIC PARTS AND MULTILAYERED LC MULTIPLE COMPONENT USING THE SAME
    104.
    发明公开
    GLASS CERAMICS COMPOSITION AND ELECTRONIC PARTS AND MULTILAYERED LC MULTIPLE COMPONENT USING THE SAME 审中-公开
    玻璃陶瓷组成电子部件和多层镀膜COMPONENT LC这一点使用

    公开(公告)号：EP1130003A1

    公开(公告)日：2001-09-05

    申请号：EP99973904.8

    申请日：1999-06-16

    申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

    发明人： KATSUMURA, Hidenori ,  SAITO, Ryuichi ,  HIRAKA, Masahiro

    IPC分类号： C04B35/16 ,  C04B35/20

    CPC分类号： C03C3/095 ,  C03C14/004 ,  C03C2214/04 ,  C03C2214/17 ,  C03C2214/30 ,  H01F17/0013 ,  H01G4/40 ,  H01L23/15 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/3011 ,  H03H2001/0085 ,  H05K1/0306 ,  H01L2924/00

    摘要： A multilayer LC composite component includes a glass-ceramic composition and internal electrodes containing silver or copper as a main component. The multilayer LC composite component is outstanding in mounting reliability particularly to a resin substrate, easy to manufacture, and has excellent electric characteristics at high frequency. The glass-ceramic composition includes 45 to 35 wt. % of forsterite powder and 55 to 65 wt. % of glass composite powder, and compositions of the glass composite powder include 40 to 50 wt. % of SiO 2 , 30 to 40 wt. % of BaO, 3 to 8 wt. % of Al 2 O 3 , 8 to 12 wt. % of La 2 O 3 , and 3 to 6 wt. % of B 2 O 3 . It is high in flexural strength, moderately high in coefficient of thermal expansion, easy to use in manufacturing a greensheet, and densely sintered at a temperature of less than 950 degrees C.

    摘要翻译： 一种多层LC复合元件包括玻璃 - 陶瓷组合物和含银或铜作为主要成分的内部电极。 的多层LC复合元件具有突出的安装可靠性特别是涉及一种树脂基板，易于制造，并且具有在高频率电特性优良。 玻璃 - 陶瓷组合物包含45至35重量％的镁橄榄石粉末和55至65重量％的玻璃复合粉末，玻璃复合粉末的组合物包括40至50％重量的SiO 2，30〜40％（重量）。 的BaO，3对Al2O3 %%（重量）的8％。的La2O3，8至12重量，以及3至6重量B2O3的。 它是在高的抗弯强度，热膨胀系数适度高，易于制造的生片使用，并致密地烧结在低于950摄氏度的温度下

    PREPARATION OF METAL-MATRIX COMPOSITE MATERIALS WITH HIGH PARTICULATE LOADINGS BY CONCENTRATION
    105.
    发明公开
    PREPARATION OF METAL-MATRIX COMPOSITE MATERIALS WITH HIGH PARTICULATE LOADINGS BY CONCENTRATION 有权
    生产高掺量VERSTÄRKERTEILCHEN浓缩金属基复合材料的

    公开(公告)号：EP1105545A1

    公开(公告)日：2001-06-13

    申请号：EP99936215.5

    申请日：1999-08-06

    申请人： ALCAN INTERNATIONAL LIMITED

    发明人： DOUTRE, Don, Allen ,  HAY, Gary ,  JIN, Iljoon ,  WALES, Peter ,  LLOYD, David J.

    IPC分类号： C22C1/10

    CPC分类号： C22C1/1036 ,  C22C1/1094 ,  C22C2001/1047 ,  H01L23/15 ,  H01L23/3733 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A composite material having less than about 25 volume percent refractory particles in a metal matrix is concentrated to have about 37-45 volume percent refractory particles. The concentrating is preferably accomplished by heating the composite material to melt the matrix, and then contacting the molten composite material to a porous element having an average pore size greater than that of the average particle size. A small pressure differential, on the order of about one atmosphere, is applied across the porous element, so that metal matrix material separates from the composite material and flows through the porous element. The particulate volume fraction in the composite material gradually increases. When the particulate volume fraction exceeds about 37 volume percent, the mass of composite material becomes semi-solid and freestanding. The resulting composite material may be further processed, as by forming to a useful shape or diluting with another matrix material.

    Silicon nitride sintered body and method of producing the same
    107.
    发明公开
    Silicon nitride sintered body and method of producing the same 有权
    Siliciumnitridsinterkörperund Verfahren zum Herstellen desselben

    公开(公告)号：EP1063211A1

    公开(公告)日：2000-12-27

    申请号：EP00305226.3

    申请日：2000-06-20

    申请人： NGK INSULATORS, LTD.

    发明人： Araki, Kiyoshi ,  Inoue, Katsuhiro

    IPC分类号： C04B35/593 ,  H01L21/48 ,  H01L23/15

    CPC分类号： C04B35/5935 ,  H01L23/15 ,  H01L2924/0002 ,  H01L2924/09701 ,  H05K1/0306 ,  H01L2924/00

    摘要： A method of producing the silicon nitride sintered body includes the steps of molding materials having silicon nitride powder, a Mg component and a sintering aid, and sintering the materials at 1,800 to 2,000°C under a nitrogen atmosphere. The materials are prepared so as to include Mg at 0.3 to 10 wt.% in terms of oxide, and after a constant temperature is kept for 0.5 hours or longer in a temperature range of 1,400 to 1,700°C, the temperature is increased to a sintering temperature. A silicon nitride having high thermal conductivity and excellent electric insulation properties at high temperature can be provided.

    摘要翻译： 一种氮化硅烧结体的制造方法，其特征在于，具有氮化硅粉末，Mg成分和烧结助剂的成型材料，在氮气气氛下在1800〜2000℃下烧结。 该材料制备成以氧化物换算为0.3〜10重量％的Mg，在1400〜1700℃的温度范围内将恒温保持0.5小时以上后，升温至 烧结温度。 可以提供具有高导热性和高温下优异的电绝缘性能的氮化硅。