公开(公告)号：EP2700614B1

公开(公告)日：2015-09-16

申请号：EP13168373.2

申请日：2013-05-17

Applicant: Honeywell International Inc.

Inventor： Supino, Ryan ,  Lodden, Grant H.

IPC: B81C1/00

CPC classification number: B81C1/00523 ,  B81C1/00182 ,  B81C1/00619 ,  B81C2201/019 ,  B81C2201/0194

公开(公告)号：EP2844419A1

公开(公告)日：2015-03-11

申请号：EP13780717.8

申请日：2013-04-25

Applicant: Alere San Diego, Inc.

Inventor： OLSSON, Erik, Mikael ,  RIVERON, Jonathan ,  TOVAR, Armando, Raul

IPC: B23K26/20

CPC classification number: B29C65/7855 ,  B23K26/244 ,  B23K26/324 ,  B23K26/60 ,  B23K2103/30 ,  B29C59/16 ,  B29C65/08 ,  B29C65/1606 ,  B29C65/1609 ,  B29C65/1612 ,  B29C65/1616 ,  B29C65/1632 ,  B29C65/1635 ,  B29C65/1654 ,  B29C65/1664 ,  B29C65/1677 ,  B29C65/1683 ,  B29C65/1696 ,  B29C65/72 ,  B29C66/0246 ,  B29C66/028 ,  B29C66/1122 ,  B29C66/21 ,  B29C66/232 ,  B29C66/234 ,  B29C66/24244 ,  B29C66/30223 ,  B29C66/3452 ,  B29C66/53461 ,  B29C66/71 ,  B29C66/73361 ,  B29C66/73921 ,  B29C66/8122 ,  B29C66/81267 ,  B29C66/836 ,  B29C66/9513 ,  B29C2035/0838 ,  B29C2791/009 ,  B29K2995/0027 ,  B29L2009/00 ,  B29L2031/756 ,  B81C1/00357 ,  B81C3/001 ,  B81C2201/0143 ,  B81C2201/019 ,  Y10T156/1039 ,  Y10T156/1064 ,  B29K2025/06 ,  B29K2069/00 ,  B29K2033/12 ,  B29K2067/00 ,  B29K2071/00 ,  B29K2909/08

Abstract: The present invention relates to methods for joining materials as well as articles manufactured using such processes. The invention pertains to a process for joining a first substrate to a second substrate. The process includes irradiating a portion of a first substrate with a laser beam having a first wavelength and intensity sufficient to increase the absorbance of the first substrate to light having a second, different wavelength. The laser beam may carbonize at least a portion of the irradiated portion of the first substrate imparting a higher absorbance to light than non-irradiated portions of the first substrate. A second substrate is then placed in contact with the irradiated portion of the first substrate. The first substrate is then irradiated with a second laser having a second wavelength, different to the first wavelength; with a sufficient intensity to heat and, preferably melt, the irradiated portion of the first substrate.

Abstract translation: 本发明涉及用于连接材料的方法以及使用这些方法制造的制品。 本发明涉及将第一衬底接合到第二衬底的方法。 该方法包括用具有第一波长和强度的激光束照射第一衬底的一部分，该激光束足以将第一衬底的吸光度增加到具有第二不同波长的光。 所述激光束可以将所述第一基板的照射部分的至少一部分碳化，使得比所述第一基板的未照射部分赋予更高的吸光度。 然后将第二衬底放置成与第一衬底的照射部分接触。 然后用不同于第一波长的第二波长的第二激光器照射第一基板; 具有足够的强度以加热并且优选地熔化第一基底的照射部分。

公开(公告)号：EP2359132A4

公开(公告)日：2014-10-29

申请号：EP09827962

申请日：2009-10-28

Applicant: UNIV WASHINGTON

Inventor： CHIU DANIEL T ,  KUO JASON S

IPC: B01L3/00 ,  B29C33/44 ,  B29C65/00 ,  B29C65/08 ,  B29C65/14 ,  B29K75/00 ,  B29L31/00 ,  B81C1/00 ,  G01N33/48 ,  G01N35/08

CPC classification number: C12M1/00 ,  B01L3/502707 ,  B01L3/502715 ,  B01L3/502723 ,  B01L3/502753 ,  B01L2200/027 ,  B01L2200/0689 ,  B01L2300/0681 ,  B01L2300/12 ,  B01L2400/0418 ,  B01L2400/0421 ,  B01L2400/0487 ,  B01L2400/086 ,  B29C33/44 ,  B29C65/08 ,  B29C65/14 ,  B29C65/1403 ,  B29C65/1406 ,  B29C65/1409 ,  B29C65/1412 ,  B29C66/028 ,  B29C66/1122 ,  B29C66/5346 ,  B29C66/71 ,  B29C66/73151 ,  B29C66/73365 ,  B29C66/73751 ,  B29C66/7392 ,  B29C66/73921 ,  B29C66/7394 ,  B29C66/81267 ,  B29C66/82661 ,  B29C2791/006 ,  B29K2075/00 ,  B29K2995/0025 ,  B29K2995/0027 ,  B29K2995/007 ,  B29L2031/756 ,  B81B2201/051 ,  B81C1/00119 ,  B81C2201/019 ,  B81C2201/034 ,  B29K2033/12

公开(公告)号：EP2785447A1

公开(公告)日：2014-10-08

申请号：EP12798566.1

申请日：2012-11-30

Applicant: Corning Incorporated

Inventor： DANNOUX, Thierry Luc Alain ,  GREMETZ, Sylvain Maxime F ,  LOBET, Olivier ,  TANGUY, Ronan

IPC: B01J19/00 ,  C03B23/24

CPC classification number: B01J19/32 ,  B01J19/0093 ,  B01J2219/00786 ,  B01J2219/00806 ,  B01J2219/00808 ,  B01J2219/00824 ,  B01J2219/00831 ,  B01J2219/32213 ,  B01J2219/32275 ,  B01J2219/32425 ,  B01J2219/32441 ,  B01J2219/328 ,  B23P19/10 ,  B81B2201/058 ,  B81C3/001 ,  B81C2201/019 ,  C03B23/245 ,  C03C3/091 ,  C03C27/00 ,  Y10T29/49904

Abstract: The present disclosure provides an assembled stack of fluidic modules comprising at least first and second fluidic modules assembled in a stacked configuration. The first fluidic module has first and second major planar surfaces and encloses a first fluidic passage extending therethrough from a first passage entrance to a first passage exit with the first passage exit located on the second major planar surface of the first fluidic module. The second fluidic module also has first and second major planar surfaces and encloses a second fluidic passage extending therethrough from a second passage entrance to a second passage exit, with the second passage entrance located on the first major planar surface of the second fluidic module. The second major planar surface of the first fluidic module and the first major planar surface of the second fluidic module are spaced apart and physically joined together by at least three separate glass or glass-ceramic pads fused therebetween, and the at least three pads include at least one pad having no through-hole and at least one pad having a through-hole, with the through-hole forming a sealed fluidic interconnection between the first fluidic passage and the second fluidic passage. A method of forming the assembled stack is also disclosed.

公开(公告)号：EP2455330B1

公开(公告)日：2014-09-24

申请号：EP11190202.9

申请日：2011-11-22

Applicant: Honeywell International Inc.

Inventor： Horning, Robert D.

IPC: H01L21/768 ,  H01L25/065 ,  B81B7/02

CPC classification number: B81B7/02 ,  B81B7/0041 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/025 ,  B81B2207/095 ,  B81B2207/096 ,  B81C2201/019 ,  H01L2224/48091 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00

公开(公告)号：EP2554510A3

公开(公告)日：2014-07-23

申请号：EP12177755.1

申请日：2012-07-25

Applicant: Teledyne Dalsa Semiconductor Inc.

Inventor： Johnstone, Robert ,  Martel, Stéphane

IPC: B81C1/00

CPC classification number: B81C1/00182 ,  B81B2201/054 ,  B81C2201/019 ,  B81C2203/0735

Abstract: A microfabricated device is fabricated by depositing a first metal layer on a substrate to provide a first electrode of an electrostatic actuator, depositing a first structural polymer layer over the first metal layer, depositing a second metal layer over said first structural polymer layer to form a second electrode of the electrostatic actuator, depositing an insulating layer over said first structural polymer layer, planarizing the insulating layer, etching the first structural polymer layer through the insulating layer and the second metal layer to undercut the second metal layer, providing additional pre-formed structural polymer layers, at least one of which has been previously patterned, and finally bonding the additional structural layers in the form of a stack over the planarized second insulating layer to one or more microfluidic channels. The technique can also be used to make cross over channels in devices without electrostatic actuators, in which case the metal layers can be omitted.

公开(公告)号：EP2702004A2

公开(公告)日：2014-03-05

申请号：EP12719509.7

申请日：2012-03-23

Applicant: Clean Energy Labs, LLC

Inventor： LACKOWSKI, William Martin ,  EVERETT, William Neil ,  PINKERTON, Joseph F.

IPC: B82B3/00

CPC classification number: B82B3/0023 ,  B81B2201/018 ,  B81B2201/036 ,  B81B2203/0109 ,  B81B2207/053 ,  B81C3/001 ,  B81C2201/019 ,  B81C2201/0194 ,  B81C2203/036 ,  B81C2203/051 ,  G01L9/0042 ,  H01H1/0094

Abstract: The present invention relates to thin membranes (such as graphene windows) and methods of aligned transfer of such thin membranes to substrates. The present invention further relates to devices that include such thin membranes.

公开(公告)号：EP2624290A2

公开(公告)日：2013-08-07

申请号：EP13166078.9

申请日：2009-04-03

Applicant: The Charles Stark Draper Laboratory, Inc.

Inventor： Racz, Livia M. ,  Tepolt, Gary B. ,  Thompson, Jeffrey C. ,  Langdo, Thomas A. ,  Mueller, Andrew J.

IPC: H01L21/68 ,  H01L23/538 ,  H01L25/10 ,  H01L21/60 ,  B81C1/00 ,  H01L23/13

CPC classification number: H01L21/486 ,  B81B2207/012 ,  B81C1/00333 ,  B81C2201/019 ,  B81C2201/0191 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/13 ,  H01L23/49827 ,  H01L24/19 ,  H01L24/24 ,  H01L24/82 ,  H01L25/105 ,  H01L2221/68359 ,  H01L2221/68377 ,  H01L2224/04105 ,  H01L2224/24227 ,  H01L2224/73267 ,  H01L2224/8203 ,  H01L2224/92144 ,  H01L2224/9222 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/1461 ,  H01L2924/15151 ,  H01L2924/15153 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  Y10T29/49124 ,  H01L2924/00

Abstract: An interposer comprises a substrate and a plurality of posts. Each of the posts extends substantially through a thickness of the substrate. A method for forming an interposer comprises forming a fill hole in a first side of a substrate and a cavity in a second side of the substrate. The cavity is in fluidic communication with the fill hole. A plurality of posts is formed in the cavity. An encapsulant is injected through the fill hole into the cavity to encapsulate the plurality of posts.

Abstract translation: 内插器包括基板和多个柱。 每个柱基本上延伸穿过衬底的厚度。 一种用于形成中介层的方法包括在衬底的第一侧中形成填充孔并且在衬底的第二侧中形成空腔。 腔体与填充孔流体连通。 多个柱形成在空腔中。 通过填充孔将密封剂注入空腔中以封装多个柱。

公开(公告)号：EP2550233A2

公开(公告)日：2013-01-30

申请号：EP11714504.5

申请日：2011-03-22

Applicant: Brinkhaus, Bernhard ,  Waser, Werner

Inventor： Brinkhaus, Bernhard ,  Waser, Werner

IPC: B81B3/00

CPC classification number: H05K1/02 ,  B81B3/0021 ,  B81B2201/0264 ,  B81B2207/07 ,  B81C2201/019 ,  G01R3/00 ,  Y10T29/49002

Abstract: The invention relates to a circuit board sensor (1) for measuring physical variables, comprising a substrate board (2) and a second board (3) both made of glass, wherein at least the second board (3) is designed such that said board is elastically deformable, wherein the substrate board (2) and the second board (3) each comprise a first and a second side (2a, 2b, 3a, 3b), wherein the second side (2b) of the substrate board (2) and the first side (3a) of the second board (3) are disposed opposite each other, and wherein a spacer element (7) is disposed between the substrate board (2) and the second board (3) and holds the substrate board (2) and the second board (3) at a mutual distance, wherein the substrate board (2) and the second board (3) extend in particular parallel to each other, wherein the second side (2b) of the substrate board (2) comprises a first metal or polymer surface (5a) and the first side (3a) of the second board (3) comprises a second metal or polymer surface (5b), and wherein the first and second metal or polymer surfaces (5a, 5b) are disposed at least partially opposite each other, and wherein conductors (4) are attached on the first side of the substrate board (2), and wherein the substrate board (2) comprises at least one first and one second through-plating (9) disposed such that the first through-plating (9a) electrically conductively connects the conductors (4) to the first metal or polymer surface (5a), and such that the second through-plating (9b) electrically conductively connects the conductor (4) to the second metal or polymer surface (5b).

公开(公告)号：EP2524390A2

公开(公告)日：2012-11-21

申请号：EP11700636.1

申请日：2011-01-10

Applicant: ELMOS Semiconductor AG

Inventor： DOELLE, Michael

IPC: H01L21/18

CPC classification number: B81C1/00158 ,  B81B3/0018 ,  B81B3/0021 ,  B81B3/007 ,  B81B3/0072 ,  B81B3/0081 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00626 ,  B81C99/0035 ,  B81C2201/019 ,  G01L9/0047 ,  H01L29/4916 ,  H01L29/84

Abstract: The micro-electromechanical semiconductor component is provided with a semiconductor substrate (4, 5), a reversibly deformable bending element (8a) made of semiconductor material, and at least one transistor that is sensitive to mechanical stresses, said transistor being designed as an integrated component in the bending element (8a). The transistor is arranged in an implanted active region pan (78a) that is made of a semiconductor material of a first conducting type and is introduced in the bending element (8a). Two mutually spaced, implanted drain and source regions (79, 80) made of a semiconductor material of a second conducting type are designed in the active region pan (78a), a channel region extending between said two regions. Implanted feed lines made of a semiconductor material of the second conducting type lead to the drain and source regions (79, 80). The upper face of the active region pan (78a) is covered by a gate oxide (81a). In the area of the channel region, a gate electrode (81) made of polysilicon is located on the gate oxide (81a), a feed line likewise made of polysilicon leading to said gate electrode.