公开(公告)号：EP1633904A2

公开(公告)日：2006-03-15

申请号：EP04733869.4

申请日：2004-05-19

申请人： L'air liquide, Société anonyme à Directoire et Conseil de Surveillance pour l'Etude et l'Exploitation des Procédés G. Claude

发明人： JURSICH, Gregory, M. ,  INMAN, Ronald, S.

IPC分类号： C23C16/40 ,  C23C16/34 ,  C23C16/30 ,  H01L21/316

CPC分类号： C23C16/45553 ,  C23C16/403 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02194 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/3145 ,  H01L21/31616 ,  H01L21/31645 ,  H01L21/318

摘要： A method of forming an aluminum containing film on a substrate includes providing a precursor having the chemical structure: AI(NR1R2)(NR3R4)(NR5R6); where each of R1, R2, R3, R4, R5 and R6 is independently selected from the group consisting of hydrogen and an alkyl group including at least two carbon atoms. The precursor is utilized to form a film on the substrate including at least one of aluminum oxide, aluminum nitride and aluminum oxy-nitride. Each of the R1 - R6 groups can be the same or different and can by straight or branched chain alkyls. An exemplary precursor that has is useful in forming aluminum containing films is tris diethylamino aluminum.

公开(公告)号：EP1605500A1

公开(公告)日：2005-12-14

申请号：EP03708659.2

申请日：2003-03-17

申请人： FUJITSU LIMITED

发明人： YAGUCHI, Masaomi, c/o FUJITSU LIMITED

IPC分类号： H01L21/318 ,  H01L29/78

CPC分类号： C23C16/308 ,  H01L21/28167 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/3141 ,  H01L21/3143 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/31616 ,  H01L21/31645 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/6659

摘要： To provide a method of manufacturing a semiconductor device which can form an oxide film of Hf 1-x Al x O (0
The method comprises the steps of (a) heating a silicon substrate in a reaction chamber; and (b) supplying film-forming gas containing source gas, nitridizing gas, and nitridation enhancing gas to a surface of the heated silicon substrate, to deposit on the silicon substrate an Hf 1-x Al x O:N film (0.1

公开(公告)号：EP1507285A2

公开(公告)日：2005-02-16

申请号：EP04254810.7

申请日：2004-08-10

申请人： Samsung Electronics Co., Ltd.

发明人： Lee, Jung-hyun ,  Seo, Bum-seok

IPC分类号： H01L21/02

CPC分类号： H01L28/56 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31645 ,  H01L21/31691

摘要： A capacitor of a semiconductor device and a memory device including the same are provided. The capacitor includes a lower electrode, a dielectric layer which has a plurality of band gaps, formed on the lower electrode, and an upper electrode formed on the dielectric layer. The dielectric layer includes a first dielectric layer that has a first band gap and is formed on the lower electrode, a second dielectric layer that has a second band gap and is formed on the first dielectric layer, and a third dielectric layer that has a third band gap and is formed on the second dielectric layer.

摘要翻译： 提供半导体器件的电容器和包括该电容器的存储器件。 电容器包括下电极，形成在下电极上的具有多个带隙的电介质层和形成在电介质层上的上电极。 电介质层包括具有第一带隙并形成在下电极上的第一电介质层，具有第二带隙并形成在第一电介质层上的第二电介质层和具有第三介电层的第三介电层， 并形成在第二电介质层上。

公开(公告)号：EP1495154A1

公开(公告)日：2005-01-12

申请号：EP03737956.7

申请日：2003-04-15

申请人： Schott AG

发明人： LEIB, Jürgen ,  MUND, Dietrich

IPC分类号： C23C14/10

CPC分类号： C03B19/00 ,  B81C1/00269 ,  B81C2203/019 ,  B81C2203/031 ,  C03C4/12 ,  C03C14/006 ,  C03C15/00 ,  C03C17/02 ,  C03C17/34 ,  C03C2214/16 ,  C03C2217/21 ,  C03C2218/15 ,  C03C2218/32 ,  C03C2218/328 ,  C03C2218/33 ,  C03C2218/355 ,  C23C14/10 ,  H01L21/02129 ,  H01L21/02145 ,  H01L21/02161 ,  H01L21/02266 ,  H01L21/31616 ,  H01L21/31625 ,  H01L21/50 ,  H01L21/56 ,  H01L23/10 ,  H01L23/291 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/49894 ,  H01L51/5203 ,  H01L51/5253 ,  H01L51/5262 ,  H01L2224/16 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/12044 ,  H01L2924/3011 ,  H05K3/28 ,  H01L2924/00

摘要： The aim of the invention is to obtain a largely water diffusion-tight encapsulation of electronic components at moderate temperatures of less than 300 °C, preferably less than 150 °C. To this end, the invention provides a method for forming housings for electronic components, particularly sensors, integrated circuits and optoelectronic components. This method comprises the following steps: providing a substrate (1), whereby at least one first substrate side (1a) is to be encapsulated; providing a vapor deposition glass source (20); placing the first substrate side (1a) relative to the vapor deposition glass source in a manner that enables the first substrate side (1a) to be subjected to a vapor deposition, and; vapor-depositing the first substrate side with a glass layer (4).

公开(公告)号：EP1452619A1

公开(公告)日：2004-09-01

申请号：EP02768137.8

申请日：2002-09-30

申请人： Advanced Systems of Technology Incubation

发明人： FUKUHISA, Koji, c/o Advanced Systems of Technology ,  NAKAJIMA, Akira, c/o Adv. Systems of Technology ,  SHINOHARA, Kenji, c/o Adv. Systems of Technology ,  WATANABE, Toshiya ,  OHSAKI, Hisashi ,  SERIKAWA, Tadashi

IPC分类号： C23C8/36 ,  C23C14/08 ,  C23C14/58

CPC分类号： C01B13/145 ,  C01P2002/01 ,  C01P2004/03 ,  C23C8/02 ,  C23C8/36 ,  C23C14/08 ,  C23C14/083 ,  C23C14/086 ,  C23C14/5826 ,  C23C18/14 ,  C23C26/00 ,  H01L21/02175 ,  H01L21/02186 ,  H01L21/02197 ,  H01L21/02266 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02356 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31691 ,  H01L31/022466 ,  H01L31/1884

摘要： The present invention provides a method for producing a crystalline metal oxide thin film by first depositing a substantially amorphous metal oxide film, and thereafter, as a post treatment, exposing the film to low temperature plasma in a high frequency electric field at 180°C or less, and the crystalline metal oxide thin film produced by this method. Because the producing method according to the present invention allows a dense and homogenous crystalline metal oxide thin film to be formed onto a substrate at a low temperature without requiring active heat treatment, a metal oxide thin film having desirable characteristics can be formed without damaging the characteristics of a substrate even if the substrate has comparatively low heat resistance.

摘要翻译： 本发明提供一种通过首先沉积基本无定形的金属氧化物膜制备结晶金属氧化物薄膜的方法，然后作为后处理，在180℃的高频电场中将膜暴露于低温等离子体，或 并且通过该方法制造的结晶金属氧化物薄膜。 由于根据本发明的制造方法允许在低温下在基板上形成致密且均匀的结晶金属氧化物薄膜而不需要主动热处理，因此可以形成具有期望特性的金属氧化物薄膜而不损害特性 即使基板具有较低的耐热性。

公开(公告)号：EP1383162A3

公开(公告)日：2004-08-25

申请号：EP02257887.6

申请日：2002-11-14

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Lee, Jung-hyun ,  Cho, Young-jin ,  Min, Yo-sep

IPC分类号： H01L21/316

CPC分类号： H01L21/28194 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31683 ,  H01L21/31691 ,  H01L27/10814 ,  H01L27/10852 ,  H01L28/56 ,  H01L29/513 ,  H01L29/517

摘要： Provided is a method for depositing a dielectric layer (13) on a substrate (11). Oxidation barrier layers (10) for preventing the oxidation and diffusion of a lower electrode are inserted into the interfaces between the substrate (11) and a dielectric layer (13) and between the dielectric layers (13, 15, 17). Accordingly, a capacitor having a low leakage current and a high capacitance is obtained. In addition, a dielectric constant is controlled by adjusting a lattice constant so that a multi-layer structure of high dielectric constant is formed on a large substrate.

公开(公告)号：EP0189309B1

公开(公告)日：1992-07-22

申请号：EP86300388.5

申请日：1986-01-21

申请人： SANYO ELECTRIC CO., LTD.

发明人： Nonaka, Hideyuki

IPC分类号： H01L21/316 ,  C30B23/02 ,  C30B29/22

CPC分类号： H01L21/31616 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02194 ,  H01L21/02271 ,  H01L21/02293 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02507 ,  H01L21/02532 ,  H01L21/02631 ,  H01L21/31604

公开(公告)号：EP0107325B1

公开(公告)日：1987-09-23

申请号：EP83305394.5

申请日：1983-09-15

申请人： Western Electric Company, Incorporated

发明人： Stall, Richard Alan

IPC分类号： C23C14/00 ,  H01L21/316

CPC分类号： H01L21/02164 ,  C23C14/08 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02194 ,  H01L21/02205 ,  H01L21/02269 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/31616 ,  H01L21/3162

公开(公告)号：EP2217740B1

公开(公告)日：2014-02-26

申请号：EP08833709.2

申请日：2008-09-16

申请人： Eastman Kodak Company

发明人： YANG, Cheng ,  IRVING, Lyn, Marie ,  LEVY, David, Howard ,  COWDERY-CORVAN, Peter, Jerome ,  FREEMAN, Diane, Carol

IPC分类号： C23C16/04 ,  C23C16/455 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L51/00

CPC分类号： C23C16/45551 ,  C23C16/042 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/3141 ,  H01L21/31616 ,  H01L51/0004

公开(公告)号：EP1629543B1

公开(公告)日：2013-08-07

申请号：EP04785558.0

申请日：2004-05-14

申请人： E.I. DU PONT DE NEMOURS AND COMPANY

发明人： CARCIA, Peter, Francis ,  MCLEAN, Robert, Scott

IPC分类号： H01L51/52 ,  C23C16/40 ,  C23C16/455

CPC分类号： C23C16/403 ,  C23C16/45525 ,  C23C16/45555 ,  G02F1/133345 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31616 ,  H01L23/564 ,  H01L51/0096 ,  H01L51/5253 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y02E10/549 ,  Y10T428/26 ,  H01L2924/00